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25 Aug 2003

Volume 83, Issue 8, pp. 1497-1679

Issue Cover Spotlight Figure

Appl. Phys. Lett. 83, 1671 (2003); http://dx.doi.org/10.1063/1.1604161 (3 pages)

Wenyi Cai, Christopher F. Powell, Yong Yue, Suresh Narayanan, Jin Wang, Mark W. Tate, Matthew J. Renzi, Alper Ercan, Ernest Fontes, and Sol M. Gruner
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Tunneling microscopy and spectroscopy of multiwalled boron nitride nanotubes

R. Czerw, S. Webster, D. L. Carroll, S. M. C. Vieira, P. R. Birkett, C. A. Rego, and S. Roth

Appl. Phys. Lett. 83, 1617 (2003); http://dx.doi.org/10.1063/1.1601308 (3 pages) | Cited 18 times

Online Publication Date: 19 August 2003

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Atomic resolution images of multiwalled boron nitride nanotubes have been obtained using scanning tunneling microscopy operating at tunneling currents below 20 pA and biases of approximately −2.5 V. Lattice images acquired with negative sample biases exhibit trigonal symmetry that is interpreted as resulting from nitrogen states. Tunneling spectroscopy confirms band gaps between 4.5 eV and 4.8 eV for tube diameters above 5 nm. Tunneling barrier height measurements made using standard current–distance analysis yields Φ∼6.3±0.7 eV for the boron nitride nanotubes. © 2003 American Institute of Physics.
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61.46.-w Structure of nanoscale materials
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)

Synthesis and characterization of superconducting single-crystal Sn nanowires

Mingliang Tian, Jinguo Wang, Joseph Snyder, James Kurtz, Ying Liu, Peter Schiffer, Thomas E. Mallouk, and M. H. W. Chan

Appl. Phys. Lett. 83, 1620 (2003); http://dx.doi.org/10.1063/1.1601692 (3 pages) | Cited 50 times

Online Publication Date: 19 August 2003

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Single-crystal superconducting tin nanowires with diameters of 40–160 nm have been prepared by electrochemical deposition in porous polycarbonate membranes. Structural characterization through transmission electron microscopy and x-ray diffraction showed that the nanowires are highly oriented along the [100] direction. Although the superconducting transition temperature is close to the bulk value of 3.7 K, the effect of reduced dimensionality is clearly evident in the electrical transport properties of the thinnest wires (40 nm diameter). Magnetization measurements show that the critical field of the nanowires increases significantly with decreasing diameter to ∼ 0.3 T for the thinnest wires, nearly an order of magnitude larger than the bulk value. © 2003 American Institute of Physics.
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74.70.Ad Metals; alloys and binary compounds (including A15, MgB2, etc.)
81.07.Bc Nanocrystalline materials
74.10.+v Occurrence, potential candidates
74.25.Ha Magnetic properties including vortex structures and related phenomena
61.46.-w Structure of nanoscale materials
74.25.Op Mixed states, critical fields, and surface sheaths

Universal description of channel conductivity for nanotube and nanowire transistors

S. V. Rotkin, H. E. Ruda, and A. Shik

Appl. Phys. Lett. 83, 1623 (2003); http://dx.doi.org/10.1063/1.1604462 (3 pages) | Cited 14 times

Online Publication Date: 19 August 2003

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A theory of drift-diffusion transport in a low-dimensional field-effect transistor is developed. Two cases of a semiconductor nanowire and a single-wall nanotube are considered using self-consistent electrostatics to obtain a general expression for the transconductance. This quantum-wire channel device description is shown to differ from a classical device theory because of the specific nanowire charge density distribution. © 2003 American Institute of Physics.
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85.35.Kt Nanotube devices
85.30.Tv Field effect devices
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
73.63.Nm Quantum wires
73.63.Fg Nanotubes
73.50.Dn Low-field transport and mobility; piezoresistance

Field electron emission from nanostructured heterogeneous HfNxOy films

M. Y. Liao, Y. Gotoh, H. Tsuji, and J. Ishikawa

Appl. Phys. Lett. 83, 1626 (2003); http://dx.doi.org/10.1063/1.1604944 (3 pages) | Cited 2 times

Online Publication Date: 19 August 2003

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Nanostructured heterogeneous HfNxOy films comprising of nanoscale conductive hafnium nitride grains embedded in a matrix of dielectric oxide or oxynitride were deposited on silicon substrate by magnetron sputtering at room temperature. Electron emission with low threshold field 25 V/μm and good current stability were reported. The field emission characteristics depend on the concentration of hafnium nitride phase, revealing the nature of heterogeneous structure. Field enhancement in HfNxOy film was explained in terms of the interaction between the conductive grains separated by dielectric layers under external electric field. The experiment is expected to open a group of nanostructured heterogeneous material consisting of stable conductive nitride and insulating oxide for field emitter, and also provide an insight into the emission mechanism of carbon films. © 2003 American Institute of Physics.
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79.70.+q Field emission, ionization, evaporation, and desorption

Three-dimensional nanolithography using proton beam writing

J. A. van Kan, A. A. Bettiol, and F. Watt

Appl. Phys. Lett. 83, 1629 (2003); http://dx.doi.org/10.1063/1.1604468 (3 pages) | Cited 53 times

Online Publication Date: 19 August 2003

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We report the utilization of a focused mega-electron-volt (MeV) proton beam to write accurate high-aspect-ratio structures at sub-100 nm dimensions. Typically, a MeV proton beam is focused to a sub-100 nm spot size and scanned over a suitable resist material. When the proton beam interacts with matter it follows an almost straight path. The secondary electrons induced by the primary proton beam have low energy and therefore limited range, resulting in minimal proximity effects. These features enable smooth three-dimensional structures to be direct written into resist materials. Initial tests have shown this technique capable of writing high aspect ratio walls of 30 nm width with sub-3 nm edge smoothness. © 2003 American Institute of Physics.
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81.16.Nd Micro- and nanolithography
85.40.Hp Lithography, masks and pattern transfer
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Fabrication of 60-nm transistors on 4-in. wafer using nanoimprint at all lithography levels

Wei Zhang and Stephen Y. Chou

Appl. Phys. Lett. 83, 1632 (2003); http://dx.doi.org/10.1063/1.1600505 (3 pages) | Cited 43 times

Online Publication Date: 19 August 2003

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Nanoimprint lithography (NIL) is a paradigm-shift method that has shown sub-10-nm resolution, high throughput, and low cost. To make NIL a next-generation lithography tool to replace conventional lithography, one must demonstrate the needed overlay accuracy in multilayer NIL, large-area uniformity, and low defect density. Here, we present the fabrication of 60-nm channel metal–oxide–semiconductor field-effect transistors on whole 4-in. wafers using NIL at all lithography levels. The nanotransistors exhibit excellent operational characteristics across the wafer. The statistics from consecutive multiwafer processing show an average overlay accuracy of 500 nm over the entire 4-in. wafer. The accuracy is much better when the field size is reduced. The overlay accuracies are limited by the current alignment method and can be improved substantially. The work presents a significant advance in nanoimprint development and its applications in manufacturing of integrated electrical, optical, chemical, and biological nanocircuits. © 2003 American Institute of Physics.
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85.40.Hp Lithography, masks and pattern transfer
81.16.Nd Micro- and nanolithography
85.30.Tv Field effect devices

Optical properties of ZnO rods formed by metalorganic chemical vapor deposition

B. P. Zhang, N. T. Binh, Y. Segawa, K. Wakatsuki, and N. Usami

Appl. Phys. Lett. 83, 1635 (2003); http://dx.doi.org/10.1063/1.1605803 (3 pages) | Cited 158 times

Online Publication Date: 19 August 2003

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High-quality ZnO rods were formed directly on sapphire (0001) substrates by metalorganic chemical vapor deposition. The rods exhibited free exciton and very sharp bound exciton emissions at low temperatures. By increasing the excitation intensity, biexciton emission was observed. Temperature dependence of the emission spectra suggested that the emission peak at ∼ 3.315 eV, which had been attributed to neutral acceptor-bound exciton emission, is due to donor-acceptor pairs. The acceptor binding energy was determined to be about 107 meV, which agrees well with that estimated from a hydrogen-atom-like acceptor model. © 2003 American Institute of Physics.
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78.55.Et II-VI semiconductors
71.35.Cc Intrinsic properties of excitons; optical absorption spectra
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures

Imaging helical potassium hexaniobate nanotubes

G. H. Du, L.-M. Peng, Q. Chen, S. Zhang, and W. Z. Zhou

Appl. Phys. Lett. 83, 1638 (2003); http://dx.doi.org/10.1063/1.1605235 (3 pages) | Cited 15 times

Online Publication Date: 19 August 2003

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Potassium hexaniobate nanotubes have been synthesized at room temperature and characterized by high-resolution transmission electron microscopy (HRTEM) and energy-dispersive x-ray analysis. It is shown that HRTEM images may be used effectively to determine the helicity of the nanotubes, and, in particular, it is found that almost all nanotubes have their axes pointing within a few degrees from the [100] direction of the K4Nb6O17 structure. © 2003 American Institute of Physics.
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61.46.-w Structure of nanoscale materials
81.07.De Nanotubes
68.37.Lp Transmission electron microscopy (TEM)
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