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1 Sep 2003

Volume 83, Issue 9, pp. 1689-1898

Issue Cover Spotlight Figure

Appl. Phys. Lett. 83, 1710 (2003); http://dx.doi.org/10.1063/1.1605792 (3 pages)

G. D. Chern, H. E. Tureci, A. Douglas Stone, R. K. Chang, M. Kneissl, and N. M. Johnson
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Good rectifying characteristic in p–n junctions composed of La0.67Ca0.33MnO3−δ/Nb–0.7 wt %-doped SrTiO3

F. X. Hu, J. Gao, J. R. Sun, and B. G. Shen

Appl. Phys. Lett. 83, 1869 (2003); http://dx.doi.org/10.1063/1.1606098 (3 pages) | Cited 42 times

Online Publication Date: 26 August 2003

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Simple p–n junctions have been fabricated using a simple heteroepitaxial structure of La0.67Ca0.33MnO3−δ/Nb-doped SrTiO3. In such junctions, the La0.67Ca0.33MnO3−δ exhibits semiconductor behavior due to oxygen deficiency, whereas the Nb–0.7 wt %-doped SrTiO3 shows a metal behavior. These junctions demonstrate good rectifying characteristic in a wide temperature range from 5 to 350 K. An intriguing observation is that the rectifying behavior is nearly independent of temperature. © 2003 American Institute of Physics.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.40.Ei Rectification
75.50.Pp Magnetic semiconductors
75.50.Dd Nonmetallic ferromagnetic materials
81.15.Fg Pulsed laser ablation deposition
73.40.Cg Contact resistance, contact potential

Convergence of hot-carrier-induced saturation-region drain current and linear-region drain current degradation in advanced n-channel metal–oxide–semiconductor field-effect transistors

Jone F. Chen and Chih-Pin Tsao

Appl. Phys. Lett. 83, 1872 (2003); http://dx.doi.org/10.1063/1.1605247 (3 pages)

Online Publication Date: 26 August 2003

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The relationship between hot-carrier-induced drain current degradation and characterization drain voltage is investigated in n-channel metal–oxide–semiconductor field-effect transistors fabricated using 0.18 μm technology. The results show that the maximum drain current degradation occurs at a characterization drain voltage that is higher than 0.1 V. This finding is attributed to two competing mechanisms as the characterization drain voltage increases: the reduction in channel inversion charges and the reduction in charged interface states. The convergence of the saturation-region drain current and linear-region drain current degradation is more evident when the device is under stress at higher temperature and forward body bias. © 2003 American Institute of Physics.
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85.30.Tv Field effect devices

Aluminum-doped zinc oxide films as transparent conductive electrode for organic light-emitting devices

X. Jiang, F. L. Wong, M. K. Fung, and S. T. Lee

Appl. Phys. Lett. 83, 1875 (2003); http://dx.doi.org/10.1063/1.1605805 (3 pages) | Cited 139 times

Online Publication Date: 26 August 2003

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Highly transparent conductive, aluminum-doped zinc oxide (ZnO:Al) films were deposited on glass substrates by midfrequency magnetron sputtering of metallic aluminum-doped zinc target. ZnO:Al films with surface work functions between 3.7 and 4.4 eV were obtained by varying the sputtering conditions. Organic light-emitting diodes (OLEDs) were fabricated on these ZnO:Al films. A current efficiency of higher than 3.7 cd/A, was achieved. For comparison, 3.9 cd/A was achieved by the reference OLEDs fabricated on commercial indium–tin–oxide substrates. © 2003 American Institute of Physics.
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85.60.Jb Light-emitting devices
81.15.Cd Deposition by sputtering

High-Tc superconducting quantum interference device observation of heat-affected zone in a spot-welded Fe–Cr–Ni system

Yoshimi Watanabe, S. H. Kang, J. W. Chan, J. W. Morris, and John Clarke

Appl. Phys. Lett. 83, 1878 (2003); http://dx.doi.org/10.1063/1.1599039 (3 pages) | Cited 5 times

Online Publication Date: 26 August 2003

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A study was carried out to observe a heat-affected zone (HAZ) in a deformed Fe–Cr–Ni system containing α′ martensite using high-Tc superconducting quantum interference device (SQUID) microscopy. Microstructure and remanent magnetization images were studied by an optical microscope and a SQUID microscope, respectively. The HAZ, in which only the face-centered-cubic austenite phase exists, could be visualized by the SQUID microscope. It was also found that the SQUID images were consistent with the results from the microstructural analysis. It was concluded that a simple SQUID measurement may serve as an effective method for a nondestructive evaluation of ferromagnetic steel phases by correlating remanent magnetization images to microstructural characteristics. © 2003 American Institute of Physics.
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75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
81.30.Kf Martensitic transformations
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
64.70.K- Solid-solid transitions

Unidirectional electron flow in a nanometer-scale semiconductor channel: A self-switching device

A. M. Song, M. Missous, P. Omling, A. R. Peaker, L. Samuelson, and W. Seifert

Appl. Phys. Lett. 83, 1881 (2003); http://dx.doi.org/10.1063/1.1606881 (3 pages) | Cited 45 times

Online Publication Date: 26 August 2003

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By tailoring the boundary of a narrow semiconductor channel to break its symmetry, we have realized a type of nanometer-scale nonlinear device, which we refer to as self-switching device (SSD). An applied voltage V not only changes the potential profile along the channel direction, but also either widens or narrows the effective channel depending on the sign of V. This results in a diode-like characteristic but without the use of any doping junction or barrier structure. The turn-on voltage can also be widely tuned from virtually zero to more than 10 V, by simply adjusting the channel width. The planar and two-terminal structure of the SSD also allows SSD-based circuits to be realized by only one step of lithography. © 2003 American Institute of Physics.
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85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
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