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1 Sep 2003

Volume 83, Issue 9, pp. 1689-1898

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Appl. Phys. Lett. 83, 1710 (2003); http://dx.doi.org/10.1063/1.1605792 (3 pages)

G. D. Chern, H. E. Tureci, A. Douglas Stone, R. K. Chang, M. Kneissl, and N. M. Johnson
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Optical properties of the ZnO nanotubes synthesized via vapor phase growth

Y. J. Xing, Z. H. Xi, Z. Q. Xue, X. D. Zhang, J. H. Song, R. M. Wang, J. Xu, Y. Song, S. L. Zhang, and D. P. Yu

Appl. Phys. Lett. 83, 1689 (2003); http://dx.doi.org/10.1063/1.1605808 (3 pages) | Cited 233 times

Online Publication Date: 26 August 2003

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A large quantity of nanosized ZnO tubular structures was prepared using a very simple thermal evaporation of mixed Zn–ZnO powders under a wet oxidation condition. The ZnO nanotubes have a hollow core with crystalline wall of 8–20 nm in thickness. Optical properties of ZnO nanotubes were studied at room temperature. Raman peaks arising from the ZnO nanotubes were analyzed, which correspond well to that of the bulk ZnO sample. The photoluminescence measurements of ZnO nanotubes revealed an intensive UV peak at 377 nm corresponding to the free exciton emission, and a broad peak at about 500 nm arising from defect-related emission. © 2003 American Institute of Physics.
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78.67.Ch Nanotubes
81.07.De Nanotubes
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.05.Dz II-VI semiconductors
78.55.Et II-VI semiconductors
78.30.Fs III-V and II-VI semiconductors

“Plug and play” quantum key distribution system with differential phase shift

Chunyuan Zhou, Guang Wu, Xiuliang Chen, and Heping Zeng

Appl. Phys. Lett. 83, 1692 (2003); http://dx.doi.org/10.1063/1.1606874 (3 pages) | Cited 7 times

Online Publication Date: 26 August 2003

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We propose a “plug and play” scheme for the long-distance fiber-based cryptosystem based on the differential phase shift quantum key distribution, where any birefringence effects and polarization-dependent losses in the transmission fiber are automatically compensated by using a Faraday mirror. This system not only has stable performance but also creates keys 8/3 times more efficiently than the conventional cryptosystem based on the BB84 protocol. © 2003 American Institute of Physics.
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42.79.Sz Optical communication systems, multiplexers, and demultiplexers
84.40.Ua Telecommunications: signal transmission and processing; communication satellites
03.67.Dd Quantum cryptography and communication security

Effects of power truncation on the insertion loss and crosstalk of arrayed-waveguide grating devices

A. A. Bernussi, L. Grave de Peralta, S. Frisbie, and H. Temkin

Appl. Phys. Lett. 83, 1695 (2003); http://dx.doi.org/10.1063/1.1605802 (3 pages) | Cited 3 times

Online Publication Date: 26 August 2003

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A measurement of the insertion loss and crosstalk in folded, 100 GHz, arrayed waveguide multiplexers as a function of the number of grating waveguides is described. The number of grating waveguides can be varied in a single device to evaluate power truncation effects with high accuracy. We show that the central peak insertion loss decreases exponentially with the number of grating waveguides. The crosstalk decreases with increased number of waveguides and the measured dependence shows valleys and peaks associated with the passband spectrum of individual channels. These observations are in good agreement with simulation results. With the arrayed waveguide design used in this work the crosstalk performance becomes phase error limited for the number of waveguides greater than 250. © 2003 American Institute of Physics.
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42.82.Et Waveguides, couplers, and arrays
42.79.Dj Gratings
42.79.Gn Optical waveguides and couplers
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Birefringence of GaN/AlGaN optical waveguides

R. Hui, Y. Wan, J. Li, S. X. Jin, J. Y. Lin, and H. X. Jiang

Appl. Phys. Lett. 83, 1698 (2003); http://dx.doi.org/10.1063/1.1606103 (3 pages) | Cited 2 times

Online Publication Date: 26 August 2003

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We have experimentally studied the birefringence of wurtzite GaN grown on a sapphire substrate. The measurements were done with single-mode GaN/AlGaN planar optical waveguides on c-plane grown heterostructure films. The refractive indices were found to be different for signal optical field perpendicular or parallel to the crystal c axis (n⊥ ≠ n∥). More importantly, we found an approximately 10% change in index difference Δn = n∥−n⊥ with variation of the waveguide orientation in the a–b plane, and a 60° periodicity was clearly observed. This is attributed to the hexagonal structure of nitride materials. © 2003 American Institute of Physics.
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42.79.Gn Optical waveguides and couplers
78.20.Fm Birefringence
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Super-resolution by elliptical bubble formation with PtOx and AgInSbTe layers

Jooho Kim, Inoh Hwang, Duseop Yoon, Insik Park, Dongho Shin, Takashi Kikukawa, Takayuki Shima, and Junji Tominaga

Appl. Phys. Lett. 83, 1701 (2003); http://dx.doi.org/10.1063/1.1605794 (3 pages) | Cited 29 times

Online Publication Date: 26 August 2003

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The recording and retrieval of signals below 100 nm mark length were attempted with elliptical bubble-type super-resolution technology with platinum oxide (PtOx) and ductile AgInSbTe layers, using the same optical system as that of a digital versatile disk (a 635 nm wavelength red laser system). The carrier-to-noise ratio (CNR) of over 47 dB for 100 nm mark length signals (over 43 dB for 80 nm mark length signals) was obtained, which can be considered as a commercially acceptable level of CNR. The recording mechanism of the sample disk was shown through the transmission electron microscopy cross-section image observation to be by rigid elliptical bubble formation at the PtOx layer located between the AgInSbTe layers. The results of this report represent the potential for a much higher-density storage using the red laser system and a subterabyte optical storage using the blue laser system. © 2003 American Institute of Physics.
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42.79.Vb Optical storage systems, optical disks
42.70.Ln Holographic recording materials; optical storage media
81.15.Cd Deposition by sputtering
78.20.N- Thermo-optic effects
78.20.nb Photothermal effects
68.37.Lp Transmission electron microscopy (TEM)

Lasing characteristics of InAs quantum-dot lasers on (001) InP substrate

Yueming Qiu, David Uhl, Rebecca Chacon, and Rui Q. Yang

Appl. Phys. Lett. 83, 1704 (2003); http://dx.doi.org/10.1063/1.1606501 (3 pages) | Cited 35 times

Online Publication Date: 26 August 2003

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Single-stack InAs self-assembled quantum-dot (QD) lasers based on (001) InP substrates have been grown by metalorganic vapor-phase epitaxy. The narrow ridge waveguide lasers lased up to 260 K in continuous-wave operation, and near room temperature in pulsed mode, with emission wavelengths between 1.59 to 1.74 μm. Above 200 K, a very low wavelength temperature sensitivity of 0.09 nm/K was observed. Lasing spectra at different temperatures suggests that the ground states and the excited states almost overlap, and form a quasicontinuous band due to the large size of the InAs dots and their inhomogeneous broadening. These results will provide guidance for further development of long wavelength InAs QD lasers based on InP substrates. © 2003 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Proton beam writing of low-loss polymer optical waveguides

T. C. Sum, A. A. Bettiol, J. A. van Kan, F. Watt, E. Y. B. Pun, and K. K. Tung

Appl. Phys. Lett. 83, 1707 (2003); http://dx.doi.org/10.1063/1.1606502 (3 pages) | Cited 23 times

Online Publication Date: 26 August 2003

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Proton beam writing is a direct-write micromachining technique capable of producing three-dimensional microstructures with straight and smooth sidewalls. Low-loss channel waveguides in SU-8, a chemically amplified negative tone resist, were fabricated using a focused submicron beam of 2.0 MeV protons with a dose of 30 nC/mm2 and a beam current of approximately 2 pA. Propagation losses of approximately (0.19±0.03) dB/cm were measured at 632.8 nm wavelength. Waveguides of arbitrary design can be easily fabricated using proton beam writing, making the technique ideal for the rapid prototyping of optical circuits. © 2003 American Institute of Physics.
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42.79.Gn Optical waveguides and couplers
42.82.Cr Fabrication techniques; lithography, pattern transfer

Unidirectional lasing from InGaN multiple-quantum-well spiral-shaped micropillars

G. D. Chern, H. E. Tureci, A. Douglas Stone, R. K. Chang, M. Kneissl, and N. M. Johnson

Appl. Phys. Lett. 83, 1710 (2003); http://dx.doi.org/10.1063/1.1605792 (3 pages) | Cited 85 times

Online Publication Date: 26 August 2003

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We report unidirectional emission from lasing in In0.09Ga0.91N/In0.01Ga0.99N multiple-quantum-well spiral micropillars. Our imaging technique shows that the maximum emission comes from the notch of the spiral microcavities at an angle about 40° from the normal of the notch. At room temperature, the spiral microcavity lases near 400 nm when optically pumped with 266 or 355 nm light. A reduction in the lasing threshold and an improvement in unidirectionality occurs when the microcavity is selectively pumped near its boundary. © 2003 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
42.55.Sa Microcavity and microdisk lasers

Terahertz electroluminescence from boron-doped silicon devices

T. N. Adam, R. T. Troeger, S. K. Ray, P.-C. Lv, and J. Kolodzey

Appl. Phys. Lett. 83, 1713 (2003); http://dx.doi.org/10.1063/1.1605263 (3 pages) | Cited 24 times

Online Publication Date: 26 August 2003

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Terahertz emission was observed from electrically pumped boron-doped p-type silicon structures at cryogenic temperatures. At a current of 1.5 A and temperature of 4.4 K, we achieved a pulsed peak power of 31 μW from a single mesa facet, integrated over three closely spaced spectral lines centered about 8.1 THz. The radiation was slightly transverse magnetically polarized with respect to the plane of the substrate and was still detectable at temperatures as high as 150 K. These findings suggest that moderate power THz sources can be fabricated without epitaxially grown quantum wells using techniques compatible with silicon integrated circuit technology. © 2003 American Institute of Physics.
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85.60.Jb Light-emitting devices

Regulating the size and position of deposited Zn nanoparticles by optical near-field desorption using size-dependent resonance

T. Yatsui, S. Takubo, J. Lim, W. Nomura, M. Kourogi, and M. Ohtsu

Appl. Phys. Lett. 83, 1716 (2003); http://dx.doi.org/10.1063/1.1606883 (3 pages) | Cited 9 times

Online Publication Date: 26 August 2003

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We report that optical near-field desorption can dramatically regulate the growth of Zn nanoparticles during optical chemical vapor deposition. The trade off between the deposition due to 3.81 eV optical near-field light and desorption due to 2.54 eV optical near-field light allowed the fabrication of a single 15 nm Zn dot, while regulating its size and position. © 2003 American Institute of Physics.
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81.07.Bc Nanocrystalline materials
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
61.46.-w Structure of nanoscale materials
68.43.Tj Photon stimulated desorption
71.45.Gm Exchange, correlation, dielectric and magnetic response functions, plasmons

Ultrafast and highly sensitive photodetectors fabricated on high-energy nitrogen-implanted GaAs

M. Mikulics, M. Marso, P. Kordoš, S. Stanček, P. Kováč, X. Zheng, S. Wu, and Roman Sobolewski

Appl. Phys. Lett. 83, 1719 (2003); http://dx.doi.org/10.1063/1.1606879 (3 pages) | Cited 10 times

Online Publication Date: 26 August 2003

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We have fabricated and tested metal–semiconductor–metal (MSM) photodetectors based on nitrogen-ion-implanted GaAs. Nitrogen ions with energy of 700 and 880 keV, respectively, were implanted into epitaxial GaAs films at an ion concentration of 3×1012 cm−2. Ti/Au MSM photodetectors with 1-μm-wide fingers were fabricated on top of the implanted GaAs. In comparison to low-temperature-grown GaAs photodetectors, produced in parallel in identical MSM geometry, the 880 keV N+-implanted photodetectors exhibited almost two orders of magnitude lower dark current (10 nA at 1 V bias) and the responsivity more than doubled (>20 mA/W at 20 V bias). Illumination with 100-fs-wide, 810 nm wavelength laser pulses, generated ∼2.5-ps-wide photoresponse signals with amplitudes as high as 2 V. The 2.5 ps relaxation time was the same for both the ion-implanted and low-temperature-grown devices and was limited by the MSM capacitance time constant. © 2003 American Institute of Physics.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
61.72.uj III-V and II-VI semiconductors
61.80.Jh Ion radiation effects
61.82.Fk Semiconductors

Optical parametric spectral broadening of picosecond laser pulses in β-barium borate

Seung Mook Lee, Bum Ku Rhee, Moongoo Choi, and Seung-Han Park

Appl. Phys. Lett. 83, 1722 (2003); http://dx.doi.org/10.1063/1.1609054 (3 pages) | Cited 1 time

Online Publication Date: 26 August 2003

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We present that optical parametric luminescence generated near the degenerate point of a type I optical parametric tuning curve in β-BaB2O4 can be used as a spectrally broadened probe beam for a picosecond pump-probe spectroscopy. In particular, we show that it is possible to change the position of the central peak and spectral range in visible and infrared wavelengths by varying the incident angle of pump pulse with respect to the optical axis of barium borate crystal. The picosecond time-resolved diffuse-reflectance experiment is also performed in order to demonstrate usefulness of these spectrally broadened pulses as a probe source. © 2003 American Institute of Physics.
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42.65.Yj Optical parametric oscillators and amplifiers
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Self-developing aspherical chalcogenide-glass microlenses for semiconductor lasers

A. Saitoh and K. Tanaka

Appl. Phys. Lett. 83, 1725 (2003); http://dx.doi.org/10.1063/1.1598650 (3 pages) | Cited 15 times

Online Publication Date: 26 August 2003

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A principle of self-developing microlenses for semiconductor lasers has been demonstrated using a photosensitive glass, As2S3. The glass film is placed in front of a semiconductor laser, the light from which increases the refractive index and thickness of the film. If its position and thickness are properly selected, the illuminated film operates as an aspherical microlens which can focus an elliptical laser beam to a circular spot. © 2003 American Institute of Physics.
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42.60.By Design of specific laser systems
42.79.Bh Lenses, prisms and mirrors
42.55.Px Semiconductor lasers; laser diodes
42.70.Gi Light-sensitive materials
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