APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter UniPHY Group iResearch App Facebook

Applied Physics Letters / Volume 84 / Issue 1 / DEVICE PHYSICS

Appl. Phys. Lett. 84, 151 (2004); http://dx.doi.org/10.1063/1.1637950 (3 pages)

Light-emitting transistor: Light emission from InGaP/GaAs heterojunction bipolar transistors

M. Feng, N. Holonyak, and W. Hafez

Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, 208 North Wright Street, Urbana, Illinois 61801

(Received 29 August 2003; accepted 27 October 2003)

This letter reports the direct observation of the radiative recombination in the graded base layer of InGaP/GaAs heterojunction bipolar transistors (HBTs). For a 1 μm×16 μm emitter HBT, we demonstrate the change of the spontaneous light emission intensity (ΔIout) as the base current (Δib) of the HBT is varied from 0 to 5 mA, i.e., an HBT operating as a light-emitting transistor. We also demonstrate output light modulation from the base layer at 1 MHz with the base current modulated at 1 MHz in normal transistor mode operation of the HBT. © 2004 American Institute of Physics.

© 2004 American Institute of Physics

RELATED DATABASES

To view database links for this article, you need to log in.

KEYWORDS and PACS

Keywords

heterojunction bipolar transistors, light emitting devices, III-V semiconductors, spontaneous emission, indium compounds, gallium arsenide

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.1637950

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    J. Bardeen and W. H. Brattain, Phys. Rev. 74, 230 (1948).

    R. N. Hall, G. E. Fenner, J. D. Kingsley, T. J. Soltys, and R. O. Carlson, Phys. Rev. Lett. 9, 366 (1962).

    N. Holonyak, Jr. and S. F. Bevacqua, Appl. Phys. Lett. 1, 82 (1962)APPLAB000001000004000082000001.

    M. I. Nathan, W. P. Dumke, G. Burns, F. H. Dill, Jr., and G. Lasher, Appl. Phys. Lett. 1, 62 (1962)APPLAB000001000003000062000001.

    T. M. Quist, R. H. Rediker, R. J. Keyes, W. E. Krag, B. Lax, A. L. McWhorter, and H. J. Zeiger, Appl. Phys. Lett. 1, 91 (1962)APPLAB000001000004000091000001.


For access to citing articles, you need to log in.



Close

Google Calendar

ADVERTISEMENT

Your Recent History Recent History Help

Recently Viewed

  1. Light-emitting transistor: Light emission from InGaP/GaAs heterojunction bipolar transistors
  2. Temporal pulse manipulation and ion generation in ultrafast laser ablation of silicon
  3. Sensitive detection of plastic explosives with self-assembled monolayer-coated microcantilevers
  4. Fabrication and mechanical characterization of ultrashort nanocantilevers
  5. InGaAs/GaAs three-dimensionally-ordered array of quantum dots
Go to AIP Home
Copyright © American Institute of Physics
close