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Appl. Phys. Lett. 84, 1756 (2004); http://dx.doi.org/10.1063/1.1664018 (3 pages)
Atom-resolved scanning tunneling microscopy of (In,Ga)As quantum wires on GaAs(311)A
(Received 2 October 2003; accepted 7 January 2004)
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Add to FacebookGenerally (In,Ga)As strained growth on GaAs surfaces results in zero-dimensional quantum dots. The formation of one-dimensional quantum wires is demonstrated during (In,Ga)As molecular-beam-epitaxial growth on GaAs(311)A at high temperature. The wires are running along the [−233] direction. Atomically resolved scanning tunneling microscopy images reveal that the wires are triangular-shaped in cross section and the two side bonding facets are {11,5,2}. These results are discussed in terms of a mechanism of strain-driven facet formation. © 2004 American Institute of Physics.
© 2004 American Institute of Physics
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