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Applied Physics Letters / Volume 84 / Issue 10 / NANOSCALE SCIENCE AND DESIGN

Appl. Phys. Lett. 84, 1759 (2004); http://dx.doi.org/10.1063/1.1668325 (3 pages)

In situ control of the catalyst efficiency in chemical vapor deposition of vertically aligned carbon nanotubes on predeposited metal catalyst films

Gyula Eres, A. A. Puretzky, D. B. Geohegan, and H. Cui

Condensed Matter Sciences Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831

(Received 10 November 2003; accepted 19 January 2004)

Premature termination of growth, presumably because of catalyst deactivation, is an undesirable side effect of chemical vapor deposition of vertically aligned carbon nanotubes on predeposited metal catalyst films. The addition of ferrocene, an effective precursor for in situ Fe formation, was found to enhance carbon nanotube growth rates and extend growth to 3.25 mm thick carbon nanotube films. Ferrocene was introduced into the gas stream by thermal evaporation concurrently with acetylene using a specially constructed source. The key factor facilitating the growth of thick carbon nanotube films was the independent and precise control of the ferrocene amount in the feedstock. The carbon nanotube films were characterized by scanning and transmission electron microscopy, and Raman spectroscopy. The temperature dependence of the carbon nanotube growth with ferrocene exhibits a steep drop at high substrate temperatures and a loss of vertical alignment at 900 °C. The negative temperature coefficient of the growth rate suggests that the reaction mechanism of vertically aligned carbon nanotube growth is governed by a heterogeneous intermediate step. © 2004 American Institute of Physics.

© 2004 American Institute of Physics

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KEYWORDS and PACS

Keywords

carbon nanotubes, thin films, chemical vapour deposition, catalysts, Raman spectra, transmission electron microscopy, scanning electron microscopy

PACS

  • 61.46.-w

    Structure of nanoscale materials

  • 81.15.Gh

    Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

  • 82.65.+r

    Surface and interface chemistry; heterogeneous catalysis at surfaces

  • 68.37.Hk

    Scanning electron microscopy (SEM) (including EBIC)

  • 78.30.Na

    Fullerenes and related materials

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.1668325

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    V. I. Merkulov, D. H. Lowndes, Y. Y. Wei, G. Eres, and E. Voelkl, Appl. Phys. Lett. 76, 3555 (2000)APPLAB000076000024003555000001.

    Y. Y. Wei and G. Eres, Appl. Phys. Lett. 76, 3759 (2000)APPLAB000076000025003759000001.

    Y. Y. Wei and G. Eres, Appl. Phys. Lett. 78, 1394 (2001)APPLAB000078000010001394000001.

    D. B. Geohegan, A. A. Puretzky, I. N. Ivanov, S. Jesse, G. Eres, and J. Y. Howe, Appl. Phys. Lett. 83, 1851 (2003)APPLAB000083000009001851000001.

    A. Cao, X. Zhang, C. Xu, J. Liang, D. Wu, X. Chen, B. Wei, and P. M. Ajayan, Appl. Phys. Lett. 79, 1252 (2001)APPLAB000079000009001252000001.

    T. de los Arcos, F. Vonau, M. G. Garnier, V. Thommen, H.-G. Boyen, P. Oelhafe, M. Duggelin, D. Mathis, and R. Guggenheim, Appl. Phys. Lett. 80, 2383 (2002)APPLAB000080000013002383000001.


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