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Applied Physics Letters / Volume 84 / Issue 11 / NANOSCALE SCIENCE AND DESIGN

Appl. Phys. Lett. 84, 1931 (2004); http://dx.doi.org/10.1063/1.1669064 (3 pages)

Fabrication of (In,Ga)As quantum-dot chains on GaAs(100)

Z. M. Wang, K. Holmes, Yu. I. Mazur, and G. J. Salamo

Physics Department, University of Arkansas, Fayetteville, Arkansas 72701

(Received 10 November 2003; accepted 9 January 2004)

Nanostructure evolution during the growth of multilayers of In0.5Ga0.5As/GaAs (100) by molecular-beam epitaxy is investigated to control the formation of lines of quantum dots called quantum-dot chains. It is found that the dot chains can be substantially increased in length by the introduction of growth interruptions during the initial stages of growth of the GaAs spacer layer. Quantum-dot chains that are longer than 5 μm are obtained by adjusting the In0.5Ga0.5As coverage and growth interruptions. The growth procedure is also used to create a template to form InAs dots into chains with a predictable dot density. The resulting dot chains offer the possibility to engineer carrier interaction among dots for novel physical phenomena and potential devices. © 2004 American Institute of Physics.

© 2004 American Institute of Physics

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KEYWORDS and PACS

Keywords

indium compounds, gallium arsenide, III-V semiconductors, semiconductor growth, semiconductor quantum dots, multilayers, molecular beam epitaxial growth, surface morphology, atomic force microscopy

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.1669064

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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