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Applied Physics Letters / Volume 84 / Issue 11 / NANOSCALE SCIENCE AND DESIGN

Appl. Phys. Lett. 84, 1934 (2004); http://dx.doi.org/10.1063/1.1687459 (3 pages)

Intraband absorption for InAs/GaAs quantum dot infrared photodetectors

J.-Z. Zhang and I. Galbraith

Physics, School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh, EH14 4AS, United Kingdom

(Received 22 October 2003; accepted 23 January 2004)

Using the envelope function theory, intraband absorption is calculated for InAs/GaAs pyramidal quantum dots. The effects of the quantum dot geometry, such as the dot shape and the wetting layer (WL) thickness, and the coupling between the WL and bound states on the intraband transitions are systematically studied. Strong in-plane polarized absorption from the first excited state occurs in the low mid-infrared region, while stronger broadband z-polarized absorption features are located at higher frequencies. This polarization dependence is in agreement with the experiment [Appl. Phys. Lett. 82, 630 (2003)] and is due to the dot geometry. The WL can induce both in-plane and z-polarized absorption. Absorption of in-plane polarized light from the ground state to the WL and continuum states is found to be negligible. Thus, for strong normal-incidence photodetection, absorption from the first excited state should be exploited. © 2004 American Institute of Physics.

© 2004 American Institute of Physics

ERRATUM

  1. Erratum: "Intraband absorption for InAs/GaAs quantum dot infrared photodetectors" [Appl. Phys. Lett. 84, 1934 (2004)]
    J.-Z. Zhang et al.
    Appl. Phys. Lett. 85, 5105 (2004)APPLAB000085000021005105000001

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KEYWORDS and PACS

Keywords

indium compounds, gallium arsenide, III-V semiconductors, semiconductor quantum dots, photodetectors, infrared detectors, absorption coefficients, bound states, wetting

PACS

  • 85.60.Gz

    Photodetectors (including infrared and CCD detectors)

  • 78.67.Hc

    Quantum dots

  • 73.21.La

    Quantum dots

  • 78.20.Ci

    Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.1687459

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    D. Pan, E. Towe, and S. Kennerly, Appl. Phys. Lett. 73, 1937 (1998)APPLAB000075000023003599000001.


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