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22 Mar 2004

Volume 84, Issue 12, pp. 2013-2211

Issue Cover Spotlight Figure

Appl. Phys. Lett. 84, 2100 (2004); http://dx.doi.org/10.1063/1.1688997 (3 pages)

P. Sutter, E. Sutter, and T. R. Ohno
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Optical properties of superlattice photonic crystal waveguides

Wounjhang Park and Christopher J. Summers

Appl. Phys. Lett. 84, 2013 (2004); http://dx.doi.org/10.1063/1.1682678 (3 pages) | Cited 10 times

Online Publication Date: 16 March 2004

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We report theoretical investigations of a superlattice photonic crystal (PC) waveguide in which the holes in the PC are infiltrated with an electro-optic medium and alternate rows biased so as to produce a superlattice structure. The three-dimensional simulations fully incorporate the finite thickness of the PC structure and show that the optical properties become strongly dependent on the direction of light propagation. Depending on the degree of index modulation the light experiences switching, out-coupling, or giant refraction and dispersion. © 2004 American Institute of Physics.
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42.79.Gn Optical waveguides and couplers
42.70.Qs Photonic bandgap materials
42.25.Bs Wave propagation, transmission and absorption
42.25.Gy Edge and boundary effects; reflection and refraction

Strain-compensated InGaAsSb/AlGaAsSb mid-infrared quantum-well lasers

W. Li, J. B. Héroux, H. Shao, and W. I. Wang

Appl. Phys. Lett. 84, 2016 (2004); http://dx.doi.org/10.1063/1.1687981 (3 pages) | Cited 8 times

Online Publication Date: 16 March 2004

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The use of strain-compensated InGaAsSb/AlGaAsSb quantum wells for the fabrication of type I mid-infrared laser devices grown on GaSb substrates by molecular-beam epitaxy is reported. The creation of a tensile strain in the Al0.25Ga0.75AsySb1−y barriers by the incorporation of an arsenic fraction greater than 2% allows to reduce the average strain in the active region and increase the valence band offset to improve hole confinement in the wells. A 2.82 μm emission wavelength in pulsed mode along with a 660 A/cm2 threshold current density are obtained at room temperature for a type I InGaAsSb/AlGaAsSb double-quantum-well laser diode. By further increasing the indium and arsenic compositions into the wells and barriers, respectively, pulsed lasing at a wavelength of 2.89 μm at room temperature has also been achieved. © 2004 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Intracavity sum-frequency generation in GaAs quantum cascade lasers

J.-Y. Bengloan, A. De Rossi, V. Ortiz, X. Marcadet, M. Calligaro, I. Maurin, and C. Sirtori

Appl. Phys. Lett. 84, 2019 (2004); http://dx.doi.org/10.1063/1.1669062 (3 pages) | Cited 20 times

Online Publication Date: 16 March 2004

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Emission of coherent light at 5.75 μm wavelength has been obtained by intracavity frequency doubling of a GaAs-based quantum cascade laser. This nonlinearity originates from the second-order susceptibility of the bulk material hosting the heterostructure and can be exploited by growing the quantum cascade laser on a 〈111〉 substrate. © 2004 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.55.Px Semiconductor lasers; laser diodes

Systematic design of photonic crystal structures using topology optimization: Low-loss waveguide bends

Jakob S. Jensen and Ole Sigmund

Appl. Phys. Lett. 84, 2022 (2004); http://dx.doi.org/10.1063/1.1688450 (3 pages) | Cited 61 times

Online Publication Date: 16 March 2004

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Topology optimization is a promising method for systematic design of optical devices. As an example, we demonstrate how the method can be used to design a 90° bend in a two-dimensional photonic crystal waveguide with a transmission loss of less than 0.3% in almost the entire frequency range of the guided mode. The method can directly be applied to the design of other optical devices, e.g., multiplexers and wave splitters, with optimized performance. © 2004 American Institute of Physics.
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42.82.Et Waveguides, couplers, and arrays
42.65.Wi Nonlinear waveguides
42.79.Gn Optical waveguides and couplers
42.70.Qs Photonic bandgap materials

Near-field optical nanopatterning of crystalline silicon

G. Wysocki, J. Heitz, and D. Bäuerle

Appl. Phys. Lett. 84, 2025 (2004); http://dx.doi.org/10.1063/1.1689395 (3 pages) | Cited 16 times

Online Publication Date: 16 March 2004

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Nanoscale photochemical and photophysical etching of Si in Cl2 atmosphere is demonstrated by means of an optical near-field setup. With 351 nm Ar+-laser radiation and low intensities, the etching mechanism is purely photochemical. In this regime, the width of patterns—which is about 115 nm at full width at half maximum (FWHM)—corresponds, approximately, to the diameter of the fiber tip. The vertical etch rate is of the order of 1 nm/s. With 514.5 nm Ar+-laser light etching is observed only at significantly higher laser-light intensities. Patterns with width down to about 30 nm at FWHM have been achieved. Here, the lateral resolution corresponds to about 1/18 of the laser wavelength employed. © 2004 American Institute of Physics.
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81.65.Cf Surface cleaning, etching, patterning
81.16.Rf Micro- and nanoscale pattern formation
68.37.Uv Near-field scanning microscopy and spectroscopy
81.05.Cy Elemental semiconductors
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.82.Fk Semiconductors
82.50.-m Photochemistry

Photonic switching based on the photoinduced birefringence in bacteriorhodopsin films

Yuhua Huang, Shin-Tson Wu, and Youyuan Zhao

Appl. Phys. Lett. 84, 2028 (2004); http://dx.doi.org/10.1063/1.1688456 (3 pages) | Cited 20 times

Online Publication Date: 16 March 2004

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Photoinduced birefringence in bacteriorhodopsin films was investigated using pump–probe method and its application for photonic switching explored. A diode-pumped second-harmonic YAG laser was used as a pumping beam and a diode laser at λ = 660 nm was used as a probing beam. The pump and probe beams overlap at the sample. Without the pumping beam, the probing light cannot transmit the analyzer to the detector. However, due to the photoinduced anisotropy, a portion of the probing light is detected when the pumping beam is present. Since λ = 660 nm is far from the absorption peak ( ∼ 570 nm) of the ground state, the photoinduced birefringence predominates. Using the intensity-dependent photoinduced birefringence in a bacteriorhodopsin film, we have demonstrated a photonic switch with ∼ 1000:1 contrast ratio, ∼ 0.6 s rise time and ∼ 1.5 s decay time. © 2004 American Institute of Physics.
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78.66.Qn Polymers; organic compounds
78.20.Fm Birefringence
42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.70.Jk Polymers and organics
87.14.E- Proteins
87.15.M- Spectra of biomolecules
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks

Superprism effect in bidimensional rectangular photonic crystals

A. I. Căbuz, E. Centeno, and D. Cassagne

Appl. Phys. Lett. 84, 2031 (2004); http://dx.doi.org/10.1063/1.1688981 (3 pages) | Cited 18 times

Online Publication Date: 16 March 2004

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In this letter, we show that photonic crystals with geometries of lower symmetry, such as the rectangular geometry, are uniquely suited for applications involving the superprism effect. The extra degree of freedom provided by the anisotropy of the unit cell allows more freedom in searching for suitable iso-frequency curves. Also, the appearance of multiple orders of diffraction allows more than one incident plane wave to couple to the same Bloch mode. This extra degree of freedom is decisive when trying to optimize the transmission. We illustrate these ideas on a particular rectangular configuration which ensures a strong angular superprism effect, a well collimated transmitted beam, and power transmissions of up to 80%. © 2004 American Institute of Physics.
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42.70.Qs Photonic bandgap materials
61.50.Ah Theory of crystal structure, crystal symmetry; calculations and modeling
42.25.Bs Wave propagation, transmission and absorption
78.20.-e Optical properties of bulk materials and thin films

Red–green–blue generation from a lone dual-wavelength GdAl3(BO3)4:Nd3+ laser

Alain Brenier, Chaoyang Tu, Zhaojie Zhu, and Baichang Wu

Appl. Phys. Lett. 84, 2034 (2004); http://dx.doi.org/10.1063/1.1688983 (3 pages) | Cited 15 times

Online Publication Date: 16 March 2004

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We demonstrate the simultaneous generation of the three basal red–green–blue colors from a lone GdAl3(BO3)4:Nd3+ bi-functional laser and optical nonlinear crystal. The laser works in a dual-wavelength operation in the two 4F3/2→4I11/2 (near 1062 nm) and 4F3/2→4I13/2 (near 1338 nm) channels, under a fixed wavelength pumping (at 744.7 nm) and with a fixed crystal orientation. Red and green results from self-frequency doubling of the two laser channels, blue results of self-sum frequency mixing of the pump and the 1338 nm laser. © 2004 American Institute of Physics.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Ammonium sulfide passivation of Type-II InAs/GaSb superlattice photodiodes

A. Gin, Y. Wei, A. Hood, A. Bajowala, V. Yazdanpanah, M. Razeghi, and M. Tidrow

Appl. Phys. Lett. 84, 2037 (2004); http://dx.doi.org/10.1063/1.1686894 (3 pages) | Cited 42 times

Online Publication Date: 16 March 2004

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We report on the surface passivation of Type-II InAs/GaSb superlattice photodetectors using various ammonium sulfide solutions. Compared to unpassivated detectors, zero-bias resistance of treated 400 μm×400 μm devices with 8 μm cutoff wavelength was improved by over an order of magnitude to ∼ 20 kΩ at 80 K. Reverse-bias dark current density was reduced by approximately two orders of magnitude to less than 10 mA/cm2 at −2 V. Dark current modeling, which takes into account trap-assisted tunneling, indicates greater than 70 times reduction in bulk trap density for passivated detectors. © 2004 American Institute of Physics.
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85.60.Dw Photodiodes; phototransistors; photoresistors
85.60.Gz Photodetectors (including infrared and CCD detectors)
81.65.Rv Passivation
72.40.+w Photoconduction and photovoltaic effects

Surface-topography-induced enhanced transmission and directivity of microwave radiation through a subwavelength circular metal aperture

Matthew J. Lockyear, Alastair P. Hibbins, J. Roy Sambles, and Christopher R. Lawrence

Appl. Phys. Lett. 84, 2040 (2004); http://dx.doi.org/10.1063/1.1688001 (3 pages) | Cited 49 times

Online Publication Date: 16 March 2004

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Strongly enhanced transmission of microwave radiation (λ0 ∼ 5 mm) is observed through a single subwavelength circular aperture of diameter d = 2.5 mm in a metallic plate. The phenomenon is caused by resonant excitation of electromagnetic surface waves supported by four concentric grooves surrounding the aperture on the illuminated side of the sample. It is also shown that similar surface patterning on the output face of the sample results in very strong angular confinement (directivity) of the transmitted beam. A finite element code is used to investigate the electromagnetic fields on both the illuminated and the exit side of the structure, the predictions from which show excellent agreement with the experimental results. © 2004 American Institute of Physics.
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41.20.Jb Electromagnetic wave propagation; radiowave propagation

Excitation and recording of morphology-dependent resonances in spherical microresonators by hollow light guiding fibers

Alexandra Nürenberg and Gustav Schweiger

Appl. Phys. Lett. 84, 2043 (2004); http://dx.doi.org/10.1063/1.1688976 (3 pages) | Cited 3 times

Online Publication Date: 16 March 2004

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We report the excitation and simultaneous recording of morphology-dependent resonances in dye-doped microresonators by a single hollow fiber. The spherical microresonator was plugged in the tapered end of a light guiding flexible hollow fiber. Light from a frequency-doubled Nd:YVO4 laser was coupled via a beam splitter into one end of the hollow fiber and transported to the resonator mounted on the tapered end of the fiber. Fluorescence was excited in the resonator. This fluorescence was partly coupled in the hollow fiber and guided back to the untapered end. Here, the fluorescence was separated from the laser light by a beam splitter and analyzed spectroscopically. The tapered fiber was prepared by heating with a CO2 laser. © 2004 American Institute of Physics.
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42.55.Sa Microcavity and microdisk lasers
78.55.Kz Solid organic materials
42.81.-i Fiber optics
42.55.Mv Dye lasers

Metal nanoparticle precipitation in periodic arrays in Au2O-doped glass by two interfered femtosecond laser pulses

Shiliang Qu, Jianrong Qiu, Chongjun Zhao, Xiongwei Jiang, Huidan Zeng, Congshan Zhu, and K. Hirao

Appl. Phys. Lett. 84, 2046 (2004); http://dx.doi.org/10.1063/1.1688004 (3 pages) | Cited 19 times

Online Publication Date: 16 March 2004

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We report on the precipitation control of Au nanoparticles in periodic arrays in silicate glass. Au2O-doped glass samples were first irradiated by two 800 nm interfered femtosecond laser pulses at room temperature and then heat treated at 550 °C for the Au nanoparticle precipitation in the laser irradiation areas. One-dimensional periodic arrays of the Au nanoparticles were controlled by changing the pulse energy and the incident angle between the interfered laser pulses. The smallest dimension in the obtained arrays was a width of 300 nm. The mechanism of the metal nanoparticle precipitation by this technique was discussed. Only two pulses are required to encode these periodic microstructures, which are applicable to emerging nanostructure devices such as optical memory with ultrahigh storage density, micrograting with high diffractive efficiency and integrative micro-optical switches. © 2004 American Institute of Physics.
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81.30.Mh Solid-phase precipitation
61.82.Rx Nanocrystalline materials
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
81.40.Gh Other heat and thermomechanical treatments
61.46.-w Structure of nanoscale materials

Generation and detection of terahertz pulses using post-process bonding of low-temperature-grown GaAs and AlGaAs

L. Desplanque, J. F. Lampin, and F. Mollot

Appl. Phys. Lett. 84, 2049 (2004); http://dx.doi.org/10.1063/1.1688977 (3 pages) | Cited 10 times

Online Publication Date: 16 March 2004

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We present an electro-optical method to measure very high frequency characteristics of planar electronic devices. This method allows one to generate and detect subpicosecond electrical pulses on a coplanar stripline using photoconduction and electroabsorption sampling in transferred low-temperature-grown epitaxial layers. The epitaxial lifted-off films are directly van der Waals bonded on the transmission line under test. Good switching efficiency and short electrical rise time (<490 fs) are measured. A bandwidth of 2.5 THz with 60 dB of dynamic range is obtained. This confers to the technique a large field of applications in ultrahigh-speed electronic measurements. © 2004 American Institute of Physics.
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78.20.Jq Electro-optical effects
73.50.Pz Photoconduction and photovoltaic effects
68.55.A- Nucleation and growth
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
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Electrochemical gating of individual single-wall carbon nanotubes observed by electron transport measurements and resonant Raman spectroscopy

S. B. Cronin, R. Barnett, M. Tinkham, S. G. Chou, O. Rabin, M. S. Dresselhaus, A. K. Swan, M. S. Ünlü, and B. B. Goldberg

Appl. Phys. Lett. 84, 2052 (2004); http://dx.doi.org/10.1063/1.1666997 (3 pages) | Cited 18 times

Online Publication Date: 16 March 2004

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Metal electrodes patterned lithographically on top of individual single-wall carbon nanotubes are used to gate the nanotubes with respect to a reference electrode in an electrolyte drop. The gating is found to have a dramatic effect on both the Raman spectra and electron transport of the nanotubes. Current through metallic nanotubes is found to increase sharply with electrochemical gate voltage, indicating that the Fermi energy reaches valence and conduction band van Hove singularities. Using resonant confocal micro-Raman spectroscopy, we observe a 9 cm−1 upshift of the tangential mode vibrational frequency, as well as a 90% decrease in intensity, by applying 1 V between an individual nanotube and a silver reference electrode in a dilute H2SO4 solution. The mechanisms for the shifts of the Raman mode frequencies are discussed on the basis of changes in the lattice constant of heavily charged nanotubes. © 2004 American Institute of Physics.
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61.46.-w Structure of nanoscale materials
82.45.Fk Electrodes
61.66.Fn Inorganic compounds
78.30.-j Infrared and Raman spectra
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Evidence on the mechanism of boron deactivation in Ge-preamorphized ultrashallow junctions

B. J. Pawlak, R. Surdeanu, B. Colombeau, A. J. Smith, N. E. B. Cowern, R. Lindsay, W. Vandervorst, B. Brijs, O. Richard, and F. Cristiano

Appl. Phys. Lett. 84, 2055 (2004); http://dx.doi.org/10.1063/1.1682697 (3 pages) | Cited 31 times

Online Publication Date: 16 March 2004

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We investigate the thermal stability of boron-doped junctions formed by Ge preamorphization and solid phase epitaxial regrowth. Isochronal annealing and characterization by sheet resistance, secondary-ion mass spectrometry, and spreading-resistance measurement are used to extract detailed information on the thermal stability of the boron activation. Using a previously established model of self-interstitial defect evolution from clusters to dislocation loops, we perform simulations of the release of interstitials from the end-of-range region. The simulations indicate that the measured deactivation is driven by interstitials emerging from the end-of-range defect region. © 2004 American Institute of Physics.
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61.72.uf Ge and Si
61.72.J- Point defects and defect clusters
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
61.72.Cc Kinetics of defect formation and annealing
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)

2.0 μm wavelength InAs quantum dashes grown on a GaAs substrate using a metamorphic buffer layer

Ganesh Balakrishnan, Shenghong Huang, Thomas J. Rotter, Andreas Stintz, L. R. Dawson, Kevin J. Malloy, H. Xu, and D. L. Huffaker

Appl. Phys. Lett. 84, 2058 (2004); http://dx.doi.org/10.1063/1.1669067 (3 pages) | Cited 26 times

Online Publication Date: 16 March 2004

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We describe optical and structure characteristics of InAs quantum dashes grown on a GaAs substrate using an AlGaAsSb metamorphic buffer. The metamorphic buffer increases the lattice constant of the growth matrix from 5.653 to 5.869 Å. The increased lattice constant of the growth matrix yields a lattice mismatch with the InAs active region of only 3.2% and accommodates a large In content to access emission wavelengths >2.0 μm. From our comparison with quantum dot structures, we conclude that the elongated quantum dash formation is due to asymmetric surface bonds in the zinc blende crystal structure that control surface migration in low strain conditions. © 2004 American Institute of Physics.
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68.65.Hb Quantum dots (patterned in quantum wells)
78.67.Hc Quantum dots
81.07.Ta Quantum dots
61.66.Fn Inorganic compounds
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors

Density fluctuations in α-decay self-irradiated zircon

Susana Ríos and Ekhard K. H. Salje

Appl. Phys. Lett. 84, 2061 (2004); http://dx.doi.org/10.1063/1.1667260 (3 pages) | Cited 9 times

Online Publication Date: 16 March 2004

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Small-angle x-ray scattering (SAXS) intensities measured in a series of natural zircons, from fully crystalline to fully amorphous, give evidence for nanoscale density fluctuations within the amorphous phase produced by α-decay self-irradiation. At low amorphous fractions (p<0.5), the SAXS intensity is dominated by the signal associated with the sharp crystalline/amorphous interphase. At high amorphous fractions (p>0.8) a peak at Q = 3 nm−1 develops, indicating the presence of 1 nm diameter regions that show a high-density contrast with the surrounding matrix. Density fluctuations are interpreted in terms of nanometer size voids. © 2004 American Institute of Physics.
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61.80.Jh Ion radiation effects
61.82.Ms Insulators
61.72.Qq Microscopic defects (voids, inclusions, etc.)
61.46.-w Structure of nanoscale materials
78.70.Ck X-ray scattering

Crystallization kinetics and microstructure-dependent leakage current behavior of ultrathin HfO2 dielectrics: In situ annealing studies

Hyoungsub Kim, Ann Marshall, Paul C. McIntyre, and Krishna C. Saraswat

Appl. Phys. Lett. 84, 2064 (2004); http://dx.doi.org/10.1063/1.1667621 (3 pages) | Cited 37 times

Online Publication Date: 16 March 2004

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The crystallization kinetics of ∼3 nm HfO2 films grown by atomic layer deposition (ALD) on SiO2-passivated Si (100) wafers were investigated using an in situ transmission electron microscope (TEM) with heating capability. Through gray-scale analysis of dark-field TEM images, it was found that a two-dimensional nucleation and growth mechanism with a decreasing of nucleation rate could account for the observed transformation rate behavior. The effects of crystalline defects (e.g., grain boundaries) on the leakage current were studied using a reduced pressure in situ postdeposition anneal in the ALD system to avoid interfacial SiO2 growth. The leakage current magnitude and temperature dependence were found to be essentially independent of the microstructural changes that accompany crystallization of the HfO2 films. © 2004 American Institute of Physics.
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77.55.-g Dielectric thin films
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.30.Hd Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder
64.70.K- Solid-solid transitions
81.40.Gh Other heat and thermomechanical treatments
82.60.Nh Thermodynamics of nucleation
61.72.Mm Grain and twin boundaries

Polarity determination of ZnO thin films by electron holography

Q. Y. Xu, Y. Wang, Y. G. Wang, X. L. Du, Q. K. Xue, and Z. Zhang

Appl. Phys. Lett. 84, 2067 (2004); http://dx.doi.org/10.1063/1.1669060 (3 pages) | Cited 5 times

Online Publication Date: 16 March 2004

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The polarity of the ZnO film grown on sapphire using an ultrathin Ga wetting layer has been investigated by electron holography. Spontaneous polarization of the ZnO film leads to localized charges in the surface, which change the potential distribution in the vacuum side of the film. The potential distribution depends on the nature of the bounded charges and change as a function of the distance from the film surface. By studying the dependence of the potential change on the distance from the film surface, the ZnO film with very thin Ga wetting layer is determined to have the [0001] polarity. © 2004 American Institute of Physics.
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77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.22.Ej Polarization and depolarization
77.55.-g Dielectric thin films
77.65.-j Piezoelectricity and electromechanical effects
68.55.-a Thin film structure and morphology

Enhancement of cathodoluminescence of ZnGa2O4:Mn thin-film phosphor by energetic particle bombardment

Joo Han Kim and Paul H. Holloway

Appl. Phys. Lett. 84, 2070 (2004); http://dx.doi.org/10.1063/1.1650031 (3 pages) | Cited 10 times

Online Publication Date: 16 March 2004

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Enhancement of cathodoluminescence of manganese-activated zinc gallate (ZnGa2O4:Mn) thin-film phosphor by energetic particle bombardment is reported. The ZnGa2O4:Mn thin-film phosphor was grown at room temperature on silicon (100) substrates by rf magnetron sputter deposition from a 2 mol % Mn-doped ZnGa2O4 target in an oxygen–argon mixture. After the deposition, the films were annealed at 800 °C for 3 h in air. The influence of energetic particle bombardment on cathodoluminescent (CL) properties of ZnGa2O4:Mn films was investigated by varying a gas pressure during the sputter growth. Our results have shown that CL brightness from ZnGa2O4:Mn films grown at 2 mTorr was more than eight times higher than that of films grown at 20 mTorr. The remarkable improvement in CL brightness from ZnGa2O4:Mn films grown at a low pressure is presumably due to the energetic particle bombardment of the growing film surface yielding a densely packed microstructure and a better crystalline quality with a highly [110]-textured structure. © 2004 American Institute of Physics.
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78.60.Hk Cathodoluminescence, ionoluminescence
68.55.A- Nucleation and growth
81.15.Cd Deposition by sputtering
78.66.Nk Insulators
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Competing processes in the surface ordering of InAs islands using a subsurface island superlattice

G. S. Solomon

Appl. Phys. Lett. 84, 2073 (2004); http://dx.doi.org/10.1063/1.1669081 (3 pages) | Cited 15 times

Online Publication Date: 16 March 2004

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A subsurface island superlattice is used to create surface spatial ordering in strain-induced InAs islands of quantum-dot scale deposited on (001) GaAs. A rectangular surface unit cell is demonstrated and its structure is attributed to competition between two surface diffusion processes, those related to surface reconstruction and those related to the subsurface island strain. Because the ratio of nearest-neighbor positions does not allow for full translation of the unit cell, only a weakly defined lattice is present which is optimized by controlling the crystal growth process. © 2004 American Institute of Physics.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
68.35.Fx Diffusion; interface formation
68.65.Cd Superlattices
68.35.Rh Phase transitions and critical phenomena

Three-photon-excited fluorescence of Al2O3-SiO2 glass containing Eu3+ ions by femtosecond laser irradiation

Hongpeng You and Masayuki Nogami

Appl. Phys. Lett. 84, 2076 (2004); http://dx.doi.org/10.1063/1.1688984 (3 pages) | Cited 10 times

Online Publication Date: 16 March 2004

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Near-infrared to visible upconverted fluorescence was observed in the Al2O3–SiO2 glass containing Eu3+ ions during femtosecond laser irradiation. The dependence of the intensity of the Eu3+ emission on the pump power reveals that the three-photon excitation is dominant in the upconversion process from near-infrared into the visible fluorescence. The analysis of the upconversion mechanism indicates that upconversion fluorescence comes from the three-photon simultaneous absorption that leads to the population of the 4f levels via the excitation of the charge transfer state of the Eu3+ ions. © 2004 American Institute of Physics.
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78.55.Qr Amorphous materials; glasses and other disordered solids
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.82.Ms Insulators
78.35.+c Brillouin and Rayleigh scattering; other light scattering
78.40.Pg Disordered solids
71.70.Gm Exchange interactions

Spatial phase separation of GaN selectively grown on a nanoscale faceted Si surface

S. C. Lee, X. Y. Sun, S. D. Hersee, S. R. J. Brueck, and H. Xu

Appl. Phys. Lett. 84, 2079 (2004); http://dx.doi.org/10.1063/1.1687456 (3 pages) | Cited 6 times

Online Publication Date: 16 March 2004

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This letter reports the growth of spatially separated hexagonal and cubic phases of GaN on a patterned Si(001) substrate by metalorganic vapor-phase epitaxy. The substrate surface was patterned with grooves having a 355 nm period. Each groove consisted of two opposed Si{111} facets that were separated by Si(001) surfaces. Epitaxial growth of GaN on this substrate began selectively on the Si{111} facets and yielded the GaN hexagonal phase. With further growth, the two hexagonal phase regions separately grown on the opposed Si{111} facets coalesced, with strongly misaligned c axes ( ∼ 110°). The GaN grown after coalescence was subsequently confirmed, by transmission electron microscopy and photoluminescence, to be of cubic phase. © 2004 American Institute of Physics.
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68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.66.Fd III-V semiconductors
81.05.Ea III-V semiconductors
78.55.Cr III-V semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase
61.46.-w Structure of nanoscale materials
64.75.-g Phase equilibria
61.72.Nn Stacking faults and other planar or extended defects
68.37.Lp Transmission electron microscopy (TEM)

Biexciton luminescence from AlxGa1−xN epitaxial layers

Yoichi Yamada, Yusuke Ueki, Kohzo Nakamura, Tsunemasa Taguchi, Yasutoshi Kawaguchi, Akihiko Ishibashi, and Toshiya Yokogawa

Appl. Phys. Lett. 84, 2082 (2004); http://dx.doi.org/10.1063/1.1689749 (3 pages) | Cited 13 times

Online Publication Date: 16 March 2004

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Excitonic optical properties of Ga-rich AlxGa1−xN ternary alloy epitaxial layers (x = 0.019, 0.038, 0.057, 0.077, and 0.092) have been studied by means of photoluminescence (PL) and time-resolved PL spectroscopy. The luminescence line due to radiative recombination of biexcitons was clearly observed for all of the five ternary alloy epitaxial layers with different Al compositions. The energy separation between exciton luminescence and biexciton luminescence increased with increasing Al composition, which indicated the increase in the binding energy of biexcitons in ternary alloys. © 2004 American Institute of Physics.
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71.35.Cc Intrinsic properties of excitons; optical absorption spectra
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
78.47.-p Spectroscopy of solid state dynamics
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Solution-processible organic semiconductor for transistor applications: Tetrabenzoporphyrin

Shinji Aramaki, Yoshimasa Sakai, and Noboru Ono

Appl. Phys. Lett. 84, 2085 (2004); http://dx.doi.org/10.1063/1.1666994 (3 pages) | Cited 57 times

Online Publication Date: 16 March 2004

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We report an organic semiconductor, tetrabenzoporphyrin, that can be used for transistor applications. It can be derived from a soluble precursor compound with bicyclo structure. The precursor film is amorphous and shows good film morphology. Then it is converted into an insoluble crystalline semiconductor film quantitatively at elevated temperature of 150–200 °C. Field-effect transistors were fabricated by this method. Observed mobility of the devices exceeded 10−2 cm2/V s with appropriate process and device structure. © 2004 American Institute of Physics.
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85.30.Tv Field effect devices
68.55.-a Thin film structure and morphology
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