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22 Mar 2004

Volume 84, Issue 12, pp. 2013-2211

Issue Cover Spotlight Figure

Appl. Phys. Lett. 84, 2100 (2004); http://dx.doi.org/10.1063/1.1688997 (3 pages)

P. Sutter, E. Sutter, and T. R. Ohno
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Efficient polymer-based interpenetrated network photovoltaic cells

Salima Alem, Remi de Bettignies, Jean-Michel Nunzi, and Michel Cariou

Appl. Phys. Lett. 84, 2178 (2004); http://dx.doi.org/10.1063/1.1669065 (3 pages) | Cited 65 times

Online Publication Date: 16 March 2004

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Organic solar cells based on an interpenetrated network of conjugated polymer as donor and fullerene derivative as acceptor materials have a great potential for improving efficiency. We fabricated a device based on a composite of poly(2-methoxy-5-(2′-ethylhexyloxy)-1, 4-phenylenevinylene and [6,6]-phenyl C60 butyric acid methyl ester. Surface treatment, insertion of interfacial layers, and improvement of the morphology of the active layer significantly increase the photovoltaic performances of the structure. We obtain an open circuit voltage of 0.87 V and short circuit current density of 8.4 mA/cm2 under 100 mW/cm2 air-mass 1.5 solar simulator illumination, yielding a 2.9% power conversion efficiency. © 2004 American Institute of Physics.
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84.60.Jt Photoelectric conversion
81.65.-b Surface treatments
68.35.B- Structure of clean surfaces (and surface reconstruction)
81.05.Qk Reinforced polymers and polymer-based composites

High-resolution strain measurement in shallow trench isolation structures using dynamic electron diffraction

Miyoung Kim, J. M. Zuo, and Gyeong-Su Park

Appl. Phys. Lett. 84, 2181 (2004); http://dx.doi.org/10.1063/1.1687451 (3 pages) | Cited 11 times

Online Publication Date: 16 March 2004

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We report a versatile electron diffraction strain measurement technique and its application to strain in shallow trench isolation (STI) device structures. Using a nanometer-sized probe formed by convergent-beam electrons in a field-emission transmission electron microscope, electron diffraction patterns were recorded with high spatial resolution. By fitting the diffraction patterns with a pattern matching technique using dynamic theory, it is shown that strain in the device can be measured with high accuracy to quantify the effects of different filling materials in STI structures. © 2004 American Institute of Physics.
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68.37.Lp Transmission electron microscopy (TEM)
85.30.De Semiconductor-device characterization, design, and modeling

Effects of surface passivation on breakdown of AlGaN/GaN high-electron-mobility transistors

Yutaka Ohno, Takeshi Nakao, Shigeru Kishimoto, Koichi Maezawa, and Takashi Mizutani

Appl. Phys. Lett. 84, 2184 (2004); http://dx.doi.org/10.1063/1.1687983 (3 pages) | Cited 30 times

Online Publication Date: 16 March 2004

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The effect of Si3N4 surface passivation on breakdown of AlGaN/GaN high-electron-mobility transistors was studied in detail by investigating dependences of the off-state breakdown voltage on temperature and gate reverse current, and by measuring electroluminescence distribution. Impact ionization in the channel which was triggered by the gate reverse current was responsible for the off-state breakdown. Surface passivation by Si3N4 film was effective to improve the off-state breakdown voltage. This has been explained by a change in the potential distribution due to suppression of electron trapping at the surface states, based on results of electroluminescence measurements. © 2004 American Institute of Physics.
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81.65.Rv Passivation
85.30.Tv Field effect devices
78.66.Fd III-V semiconductors
81.05.Ea III-V semiconductors
78.60.Fi Electroluminescence
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