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22 Mar 2004

Volume 84, Issue 12, pp. 2013-2211

Issue Cover Spotlight Figure

Appl. Phys. Lett. 84, 2100 (2004); http://dx.doi.org/10.1063/1.1688997 (3 pages)

P. Sutter, E. Sutter, and T. R. Ohno
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Domain structure of epitaxial CaHfO3 gate insulator films on SrTiO3

Keisuke Shibuya, Tsuyoshi Ohnishi, Mikk Lippmaa, Masashi Kawasaki, and Hideomi Koinuma

Appl. Phys. Lett. 84, 2142 (2004); http://dx.doi.org/10.1063/1.1689394 (3 pages) | Cited 13 times

Online Publication Date: 16 March 2004

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Thin CaHfO3 films were grown on (100) and (110)-oriented SrTiO3 surfaces with the aim of obtaining an insulator film for epitaxial oxide device design. We show that films grown on the (100) surface of SrTiO3 have a multidomain structure, which increases film roughness and decreases the maximum breakdown field of the insulator. Single-domain films were obtained on the SrTiO3 (110) surface. These films had a breakdown field of 5 MV/cm and a dielectric constant of εr = 16 to 17 at room temperature. © 2004 American Institute of Physics.
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77.80.Dj Domain structure; hysteresis
77.55.-g Dielectric thin films
77.22.Jp Dielectric breakdown and space-charge effects
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
68.35.B- Structure of clean surfaces (and surface reconstruction)

Dielectric behavior of electroactive fluorinate-based terpolymers

Chen Ang and Zhi Yu

Appl. Phys. Lett. 84, 2145 (2004); http://dx.doi.org/10.1063/1.1688455 (3 pages) | Cited 3 times

Online Publication Date: 16 March 2004

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The dielectric and ferroelectric properties of the poly(vinylidene fluoride–trifluoroethylene–chlorotrifluoroethylene) terpolymers are studied in the temperature range 160–380 K. More attention was given to the dielectric loss in the dielectric spectra and the following results were obtained: (1) there are two dielectric polarization mechanisms, modes A and B, contributing to the majority of the dielectric permittivity; (2) by using the Cole–Cole plot method, precise relaxation rates of mode B can be obtained, which follow the Vogel–Fulcher relation with reasonable parameters, TVF = ∼ 160±2 K, UVF = ∼ 0.16±0.01 eV, ν0 = 1×1012 Hz. The temperature where mode A occurs does not shift with the variation of frequency and a well-developed hysteresis loop is observed, indicating the existence of a normal “paraelectric–ferroelectric” transition in the terpolymer. © 2004 American Institute of Physics.
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77.84.Jd Polymers; organic compounds
77.22.Gm Dielectric loss and relaxation
77.80.B- Phase transitions and Curie point
77.22.Ch Permittivity (dielectric function)
77.22.Ej Polarization and depolarization

Effects of dielectric structure of HfO2 on carrier generation rate in Si substrate and channel mobility

Chang Yong Kang, Hag-Ju Cho, Rino Choi, Chang Seok Kang, Young Hee Kim, Se Jong Rhee, Chang Hwan Choi, Shahriar M. Akbar, and Jack C. Lee

Appl. Phys. Lett. 84, 2148 (2004); http://dx.doi.org/10.1063/1.1689744 (3 pages) | Cited 9 times

Online Publication Date: 16 March 2004

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This letter presents the effects of surface preparation for hafnium-based dielectrics on the bulk carrier generation rates and the carrier mobility. Different surface preparations result in different interfacial layers. Nitrogen-incorporated layers effectively block impurity penetration from hafnium oxide, and lead to the increase of bulk carrier generation lifetime. However, nitrogen-incorporated interface layers increase interface state density and degrade channel mobility, even though bulk carrier generation lifetime is increased. Thus, mobility degradation is preliminarily caused by fixed charge and interface states of the high-k dielectrics. © 2004 American Institute of Physics.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
77.55.-g Dielectric thin films
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.20.Fr Low-field transport and mobility; piezoresistance
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
61.72.up Other materials
73.20.Hb Impurity and defect levels; energy states of adsorbed species
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