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22 Mar 2004

Volume 84, Issue 12, pp. 2013-2211

Issue Cover Spotlight Figure

Appl. Phys. Lett. 84, 2100 (2004); http://dx.doi.org/10.1063/1.1688997 (3 pages)

P. Sutter, E. Sutter, and T. R. Ohno
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Solution-processible organic semiconductor for transistor applications: Tetrabenzoporphyrin

Shinji Aramaki, Yoshimasa Sakai, and Noboru Ono

Appl. Phys. Lett. 84, 2085 (2004); http://dx.doi.org/10.1063/1.1666994 (3 pages) | Cited 57 times

Online Publication Date: 16 March 2004

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We report an organic semiconductor, tetrabenzoporphyrin, that can be used for transistor applications. It can be derived from a soluble precursor compound with bicyclo structure. The precursor film is amorphous and shows good film morphology. Then it is converted into an insoluble crystalline semiconductor film quantitatively at elevated temperature of 150–200 °C. Field-effect transistors were fabricated by this method. Observed mobility of the devices exceeded 10−2 cm2/V s with appropriate process and device structure. © 2004 American Institute of Physics.
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85.30.Tv Field effect devices
68.55.-a Thin film structure and morphology

Effect of gate oxidation method on electrical properties of metal-oxide-semiconductor field-effect transistors fabricated on 4H-SiC C(000math) face

Kenji Fukuda, Makoto Kato, Kazutoshi Kojima, and Junji Senzaki

Appl. Phys. Lett. 84, 2088 (2004); http://dx.doi.org/10.1063/1.1682680 (3 pages) | Cited 28 times

Online Publication Date: 16 March 2004

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The effect of gate oxidation method on the electrical properties of metal-oxide-semiconductor field-effect transistors (MOSFETs) fabricated on 4H-SiC C(000math) face has been investigated. In the case of SiC MOSFETs fabricated by dry gate oxidation, the peak value of field-effect mobility (μFE) is 16.3 cm2/V s. On the other hand, pyrogenic gate oxidation and pyrogenic gate oxidation followed by H2 postoxidation annealing (POA) considerably decreased the interface trap density (Dit) and the threshold voltage, and markedly improved the μFE. The depth profiles of hydrogen density were measured using secondary ion mass spectroscopy. These verified that pyrogenic gate oxidation increases hydrogen density at the SiO2/SiC interface compared to dry gate oxidation, and that the pyrogenic gate oxidation followed by H2 POA increases considerably it. It is thought that the Dit reduction might be caused by the passivation of interface states by –H or –OH. The peak value of μFE for SiC MOSFETs fabricated by pyrogenic gate oxidation followed by H2 POA is 111 cm2/V s, which is much higher than that of SiC MOSFETs fabricated on a Si(0001) face. Therefore, the 4H-SiC C(000math) face is suitable for the fabrication of SiC power MOSFETs. © 2004 American Institute of Physics.
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85.30.Tv Field effect devices
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
81.65.Mq Oxidation
81.65.Rv Passivation
81.40.Gh Other heat and thermomechanical treatments
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)

Picosecond response of gallium-nitride metal–semiconductor–metal photodetectors

Jianliang Li, Ying Xu, T. Y. Hsiang, and W. R. Donaldson

Appl. Phys. Lett. 84, 2091 (2004); http://dx.doi.org/10.1063/1.1688454 (3 pages) | Cited 13 times

Online Publication Date: 16 March 2004

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Metal–semiconductor–metal ultraviolet photodiodes fabricated on GaN were tested in the picosecond regime with an electro-optic sampling system. A device with a feature size of 1 μm showed a response with 1.4 ps rise time and 3.5 ps full width at half maximum. The derived electron velocity, 1.43×107 cm/s, is in good agreement with independent photoexcitation measurements. A slower impulse response was observed in a device with smaller feature size of 0.5 μm. © 2004 American Institute of Physics.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
85.60.Dw Photodiodes; phototransistors; photoresistors
73.40.Sx Metal-semiconductor-metal structures

Memory effect of oxide/SiC:O/oxide sandwiched structures

T. C. Chang, S. T. Yan, F. M. Yang, P. T. Liu, and S. M. Sze

Appl. Phys. Lett. 84, 2094 (2004); http://dx.doi.org/10.1063/1.1675924 (3 pages) | Cited 5 times

Online Publication Date: 16 March 2004

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The memory effects of the oxide/oxygen-incorporated silicon carbide (SiC:O)/oxide sandwiched structure were investigated. The memory window is decreased with the increase of the oxygen content in the SiC:O film due to the reduction of dangling bonds. A concise model is proposed to explain the reduction of dangling bonds with increasing oxygen content. Also, a higher breakdown voltage is observed with less oxygen content in the SiC:O film, which is attributed to the high barrier height induced by electron trapping in the SiC:O film. © 2004 American Institute of Physics.
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71.55.Ht Other nonmetals
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.61.Le Other inorganic semiconductors

High-mobility, sputtered films of indium oxide doped with molybdenum

Yuki Yoshida, David M. Wood, Timothy A. Gessert, and Timothy J. Coutts

Appl. Phys. Lett. 84, 2097 (2004); http://dx.doi.org/10.1063/1.1687984 (3 pages) | Cited 34 times

Online Publication Date: 16 March 2004

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Thin films of molybdenum-doped indium oxide, an n-type transparent conducting oxide, were deposited on glass substrates by a large-area deposition technique, radio-frequency magnetron sputtering, and their electrical properties were examined. Molybdenum content was varied from 1 to 4 wt%, and the highest mobility achieved was 83 cm2 V−1 s−1 at a carrier concentration of 3.0×1020 cm−3 without any postdeposition treatment for one of the films made from the target with 2 wt% Mo. Temperature-dependent Hall analysis indicated that this high mobility is limited by phonon scattering, whereas the method of four coefficients analysis showed that the conduction band is parabolic. © 2004 American Institute of Physics.
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68.55.A- Nucleation and growth
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.61.Le Other inorganic semiconductors
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
81.15.Cd Deposition by sputtering
81.05.Hd Other semiconductors

High-resolution mapping of nonuniform carrier transport at contacts to polycrystalline CdTe/CdS solar cells

P. Sutter, E. Sutter, and T. R. Ohno

Appl. Phys. Lett. 84, 2100 (2004); http://dx.doi.org/10.1063/1.1688997 (3 pages) | Cited 12 times

Online Publication Date: 16 March 2004

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We demonstrate a spectroscopic technique based on scanning tunneling microscopy that provides high-resolution maps of local carrier transport across contacts to polycrystalline thin-film solar cells. Using this technique, preferential transport channels across a p+-ZnTe/p-CdTe back contact of a p-CdTe/n-CdS solar cell are imaged with 20 nm spatial resolution. Transport across this contact is highly nonuniform. Large areas of high resistance coexist with nanoscale low-resistance regions that are strongly correlated with grain boundaries in the CdTe absorber. These results suggest an important role of grain boundaries as near-contact conducting channels. © 2004 American Institute of Physics.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
84.60.Jt Photoelectric conversion
61.72.Mm Grain and twin boundaries
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
73.61.Ga II-VI semiconductors
72.20.Fr Low-field transport and mobility; piezoresistance
61.46.-w Structure of nanoscale materials

Mapping In concentration, strain, and internal electric field in InGaN/GaN quantum well structure

M. Takeguchi, M. R. McCartney, and David J. Smith

Appl. Phys. Lett. 84, 2103 (2004); http://dx.doi.org/10.1063/1.1689400 (3 pages) | Cited 20 times

Online Publication Date: 16 March 2004

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Quantitative comparisons have been made of the In concentration, strain, and internal electric field present in a pseudomorphic InGaN/GaN quantum well. Z-contrast scanning transmission electron microscopy was used for mapping In concentration with atomic resolution, variations of the c-lattice parameter of the InGaN layer were measured from (0001) lattice fringes in high-resolution transmission electron micrographs, and the internal electric fields were determined by differentiating phase images obtained by electron holography. Based on these measurements, it was concluded that local fluctuations of In concentration caused inhomogeneities in the internal electric field across the quantum well. The band structure of the quantum well would thus be altered not only by quantum dot effects but also by the additional modulation of the internal electric field, leading to further broadening of the light emission. © 2004 American Institute of Physics.
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68.65.Fg Quantum wells
73.21.Fg Quantum wells
68.37.Lp Transmission electron microscopy (TEM)

Room-temperature silicon light-emitting diodes based on dislocation luminescence

V. Kveder, M. Badylevich, E. Steinman, A. Izotov, M. Seibt, and W. Schröter

Appl. Phys. Lett. 84, 2106 (2004); http://dx.doi.org/10.1063/1.1689402 (3 pages) | Cited 61 times

Online Publication Date: 16 March 2004

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We demonstrate electroluminescence (EL) with an external efficiency of more than 0.1% at room temperature from glide dislocations in silicon. The key to this achievement is a considerable reduction of nonradiative carrier recombination at dislocations due to impurities and core defects by impurity gettering and hydrogen passivation, respectively, which is shown by means of deep-level transient spectroscopy. Time-resolved EL measurements reveal a response time below 1.8 μs, which is much faster, compared to the band-to-band luminescence of bulk silicon. © 2004 American Institute of Physics.
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85.60.Jb Light-emitting devices
78.60.Fi Electroluminescence
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
81.65.Rv Passivation
78.55.Ap Elemental semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Mapping the potential within a nanoscale undoped GaAs region using a scanning electron microscope

B. Kaestner, C. Schönjahn, and C. J. Humphreys

Appl. Phys. Lett. 84, 2109 (2004); http://dx.doi.org/10.1063/1.1689755 (3 pages) | Cited 8 times

Online Publication Date: 16 March 2004

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Semiconductor dopant profiling using secondary electron imaging in a scanning electron microscope has been developed in recent years. In this letter, we show that the mechanism behind it also allows mapping of the electric potential of undoped regions. By using an unbiased GaAs/AlGaAs heterostructure, this letter demonstrates the direct observation of the electrostatic potential variation inside a 90-nm-wide undoped GaAs channel surrounded by ionized dopants. The secondary electron emission intensities are compared with two-dimensional numerical solutions of the electric potential. © 2004 American Institute of Physics.
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79.20.Hx Electron impact: secondary emission
61.46.-w Structure of nanoscale materials
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)

Effects of hydrostatic and uniaxial stress on the Schottky barrier heights of Ga-polarity and N-polarity n-GaN

Y. Liu, M. Z. Kauser, M. I. Nathan, P. P. Ruden, S. Dogan, H. Morkoç, S. S. Park, and K. Y. Lee

Appl. Phys. Lett. 84, 2112 (2004); http://dx.doi.org/10.1063/1.1689392 (3 pages) | Cited 14 times

Online Publication Date: 16 March 2004

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We report measurements of the Schottky barrier heights of Ni/Au contacts on Ga-polarity and N-polarity n-GaN under hydrostatic pressure and applied in-plane uniaxial stress. Under hydrostatic pressure the two different polarities of GaN yield significantly different rates of Schottky barrier height increase with increasing pressure. Uniaxial stress parallel to the surface affects the Schottky barrier height only minimally. The observed changes in barrier height under stress are attributed to a combination of band structure and piezoelectric effects. © 2004 American Institute of Physics.
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73.30.+y Surface double layers, Schottky barriers, and work functions
85.30.Kk Junction diodes
71.20.Nr Semiconductor compounds
73.20.At Surface states, band structure, electron density of states
77.65.Bn Piezoelectric and electrostrictive constants
73.40.Ns Metal-nonmetal contacts

Field emission properties of heavily Si-doped AlN in triode-type display structure

Yoshitaka Taniyasu, Makoto Kasu, and Toshiki Makimoto

Appl. Phys. Lett. 84, 2115 (2004); http://dx.doi.org/10.1063/1.1689398 (3 pages) | Cited 40 times

Online Publication Date: 16 March 2004

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Using heavily Si-doped AlN, a triode-type field emission display is demonstrated. The device consists of the heavily Si-doped AlN field emitter, mesh grid, and phosphor-coated anode screen. The device exhibits a low turn-on electric field of 11 V/μm, and the field emission current exponentially increases as the grid voltage increases. The field emission current reaches 9.5 μA at an electric field strength of 23 V/μm. Luminescence from the phosphor excited by the field-emitted electrons is uniform over the anode screen and is intense enough for the display application. The field emission current is stable over time. © 2004 American Institute of Physics.
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85.45.Fd Field emission displays (FEDs)
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