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22 Mar 2004

Volume 84, Issue 12, pp. 2013-2211

Issue Cover Spotlight Figure

Appl. Phys. Lett. 84, 2100 (2004); http://dx.doi.org/10.1063/1.1688997 (3 pages)

P. Sutter, E. Sutter, and T. R. Ohno
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Nanostructuring the Er–Yb distribution to improve the photoluminescence response of thin films

A. Suarez-Garcia, R. Serna, M. Jiménez de Castro, C. N. Afonso, and I. Vickridge

Appl. Phys. Lett. 84, 2151 (2004); http://dx.doi.org/10.1063/1.1664034 (3 pages) | Cited 20 times

Online Publication Date: 16 March 2004

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Thin films of amorphous aluminum oxide (a-Al2O3) codoped with Er3+ and Yb3+ ions have been in-depth nanostructured by distributing the rate earth (RE) ions in layers separated in the 0–3 nm range. The Yb to Er concentration ratio is varied from 0 to 3.6. The photoluminescence (PL) response at 1.53 μm exhibits an increase of up to two orders of magnitude with respect to that of films doped only with Er. The PL intensity is improved when Yb3+ and Er3+ ions are in separate layers and the results show that efficient Yb3+ to Er3+ energy transfer can be achieved for separations up to 3 nm. Furthermore, it is shown that designing an adequate RE distribution, for the same total RE content and Yb to Er concentration ratio, can enhance the PL intensity by a further factor of two. It is shown that the Er3+ PL response is improved because of a reduction of the RE clustering and an improvement of the energy transfer from Yb3+ to Er3+ ions. © 2004 American Institute of Physics.
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78.66.Nk Insulators
81.16.Mk Laser-assisted deposition
61.46.-w Structure of nanoscale materials
78.55.Hx Other solid inorganic materials

Azafullerene (C59N)2 thin-film field-effect transistors

Ryotaro Kumashiro, Katsumi Tanigaki, Hirotaka Ohashi, Nikos Tagmatarchis, Haruhito Kato, Hisanori Shinohara, Takeshi Akasaka, Kenichi Kato, Shinobu Aoyagi, Shigeru Kimura, and Masaki Takata

Appl. Phys. Lett. 84, 2154 (2004); http://dx.doi.org/10.1063/1.1667013 (3 pages) | Cited 7 times

Online Publication Date: 16 March 2004

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Thin-film field-effect transistors (FETs) of azafullerene (C59N)2 are fabricated, and their properties are investigated. The (C59N)2 FET exhibits n-channel characteristics with the field-effect electron mobility of 3.8×10−4 cm2 V−1 s−1 and the on–off current ratio of 103 at room temperature. The observed differences are ascribed to the much smaller grain size and the worse crystallinity of (C59N)2 thin films, on a basis of low angle x-ray diffraction structural data. The anticipated dimer to monomer conversion with electron carrier injection is not observed. The FET characteristics are discussed from the temperature evolution of the mobilities between (C59N)2 and C60 FETs. © 2004 American Institute of Physics.
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85.30.Tv Field effect devices

Synthesis and photoluminescence properties of ZnMnS nanobelts

B. Y. Geng, L. D. Zhang, G. Z. Wang, T. Xie, Y. G. Zhang, and G. W. Meng

Appl. Phys. Lett. 84, 2157 (2004); http://dx.doi.org/10.1063/1.1687985 (3 pages) | Cited 33 times

Online Publication Date: 16 March 2004

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Mn-doped ZnS nanobelts have been prepared through a thermal evaporation method starting with a mixture of acetylacetonates and H2S at 900 °C. The nanobelts had a uniform single-crystal hexagonal wurtzite structure and grew along [001] direction. Undoped ZnS nanobelts and ZnMnS nanobelts with 1%, 3%, and 5% Mn so obtained have been characterized by x-ray diffraction, energy dispersive x-ray analysis, and photoluminescence (PL) spectra. PL measurements showed that the fluorescence efficiencies increased and the glow peaks shifted to longer wavelengths as the Mn-doped ratios increased, and the doping was found responsible for the changes in the defect-related emission of the ZnS nanobelts. © 2004 American Institute of Physics.
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81.07.Bc Nanocrystalline materials
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
61.46.-w Structure of nanoscale materials
78.55.Et II-VI semiconductors
78.66.Hf II-VI semiconductors
82.80.Ej X-ray, Mössbauer, and other γ-ray spectroscopic analysis methods

Optical measurement of rolling and spinning of half-coated nanoparticles

Jaehyuck Choi and Y.-H. Lo

Appl. Phys. Lett. 84, 2160 (2004); http://dx.doi.org/10.1063/1.1689399 (3 pages)

Online Publication Date: 16 March 2004

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A technique of detecting the rolling and spinning of half-coated nanoparticles using interference ring patterns of the fluorescence has been demonstrated. Using the unique ability to measure nanoparticle rotations in multiple degrees of freedom, we are able to determine the orientation of a moving nanoparticle in real time. Ultimately, the detailed knowledge of the rotational behavior of half-coated nanoparticles is expected to produce physical insight of nano biomechanical systems. © 2004 American Institute of Physics.
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61.46.-w Structure of nanoscale materials
87.15.M- Spectra of biomolecules

Stimulated emission in a nanostructured silicon pn junction diode using current injection

M. J. Chen, J. L. Yen, J. Y. Li, J. F. Chang, S. C. Tsai, and C. S. Tsai

Appl. Phys. Lett. 84, 2163 (2004); http://dx.doi.org/10.1063/1.1687458 (3 pages) | Cited 40 times

Online Publication Date: 16 March 2004

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Stimulated emission at bandgap energy of 1.1 eV was observed in a silicon nanostructured pn junction diode using current injection at room temperature. Nonuniform diffusion using spin-on boron dopant mixed with silicon dioxide nanoparticles was used to fabricate the device. The spatial confinement of carriers through such localization structures contributes to the enhancement of the stimulated emission. The experimental results show a drastic increase in the optical power and multiple spectral peaks at wavelengths longer than the main peak of spontaneous emission through various phonon-assisted radiative recombination processes. When the injection current significantly exceeds a threshold, a single peak dominates, exhibiting stimulated emission. © 2004 American Institute of Physics.
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85.60.Jb Light-emitting devices
85.30.Kk Junction diodes
78.45.+h Stimulated emission

High detectivity InGaAs/InGaP quantum-dot infrared photodetectors grown by low pressure metalorganic chemical vapor deposition

J. Jiang, S. Tsao, T. O’Sullivan, W. Zhang, H. Lim, T. Sills, K. Mi, M. Razeghi, G. J. Brown, and M. Z. Tidrow

Appl. Phys. Lett. 84, 2166 (2004); http://dx.doi.org/10.1063/1.1688982 (3 pages) | Cited 36 times

Online Publication Date: 16 March 2004

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We report a high detectivity middle-wavelength infrared quantum dot infrared photodetector (QDIP). The InGaAs quantum dots were grown by self-assembly on an InGaP matrix via low pressure metalorganic chemical vapor deposition. Photoresponse was observed at temperatures above 200 K with a peak wavelength of 4.7 μm and cutoff wavelength of 5.2 μm. The background limited performance temperature was 140 K, and this was attributed to the super low dark current observed in this QDIP. A detectivity of 3.6×1010 cm Hz1/2/W, which is comparable to the state-of-the-art quantum well infrared photodetectors in a similar wavelength range, was obtained for this InGaAs/InGaP QDIP at both T = 77 K and T = 95 K at biases of −1.6 and −1.4 V, respectively. © 2004 American Institute of Physics.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
81.07.Ta Quantum dots
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.50.Pz Photoconduction and photovoltaic effects
73.61.Ey III-V semiconductors

Photoinduced charge-density-wave dynamics in K0.3MoO3

Yuhang Ren, Gunter Lüpke, and Zhu’an Xu

Appl. Phys. Lett. 84, 2169 (2004); http://dx.doi.org/10.1063/1.1689391 (3 pages) | Cited 3 times

Online Publication Date: 16 March 2004

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We report on time-resolved spectroscopy from the ultraviolet to mid-infrared spectrum of low-frequency collective excitations: dispersion and anisotropy of amplitude mode and phase mode in quasi-one-dimensional charge-density wave conductors, K0.3MoO3 and K0.33MoO3. Our results show that the time-resolved optical technique provides momentum resolution of collective modes. © 2004 American Institute of Physics.
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72.15.Nj Collective modes (e.g., in one-dimensional conductors)
78.47.-p Spectroscopy of solid state dynamics
78.40.Ha Other nonmetallic inorganics
78.30.Hv Other nonmetallic inorganics
71.45.Lr Charge-density-wave systems

Out-of-plane mosaic of single-wall carbon nanotube films

W. Zhou, K. I. Winey, J. E. Fischer, T. V. Sreekumar, S. Kumar, and H. Kataura

Appl. Phys. Lett. 84, 2172 (2004); http://dx.doi.org/10.1063/1.1689405 (3 pages) | Cited 15 times

Online Publication Date: 16 March 2004

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For single-wall carbon nanotube (SWNT) films deposited from suspension onto filter membranes, or by drop casting or spin coating onto flat substrates, the tube axes lie preferentially in the film plane. Using x-ray scattering and a two-dimensional detector, we show that this out-of-plane mosaic spread can be easily and accurately quantified. It varies significantly with deposition conditions, and the aligning effects of deposition and external force in the film plane (e.g., magnetic field) are additive. Films from well-dispersed tubes show better alignment than from poor dispersions. The finite out-of-plane mosaic in C60SWNT films enables quantitative separation of one-dimensional diffraction (chains of C60 peas) from the 2D rope lattice diffraction. © 2004 American Institute of Physics.
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61.46.-w Structure of nanoscale materials
68.55.-a Thin film structure and morphology
81.07.De Nanotubes
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
78.70.Ck X-ray scattering

Controlling film growth with selective excitation: Chemical vapor deposition growth of silicon

Biao Wu, Philip I. Cohen, L. C. Feldman, and Zhenyu Zhang

Appl. Phys. Lett. 84, 2175 (2004); http://dx.doi.org/10.1063/1.1687452 (3 pages) | Cited 1 time

Online Publication Date: 16 March 2004

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We propose a method of controlling the growth mode in an epitaxial system. It takes advantage of differences in the vibrational frequencies of adatom–substrate bonds at terraces and steps. With a properly tuned infrared laser, one can selectively excite only the adatom–substrate bonds at steps and enhance the mobility of these adatoms, consequently promoting step-flow growth and reducing film roughness. The feasibility of this method is shown theoretically with respect to the prototype system of chemical vapor deposition growth of silicon. © 2004 American Institute of Physics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
68.35.B- Structure of clean surfaces (and surface reconstruction)
81.05.Cy Elemental semiconductors
68.55.-a Thin film structure and morphology
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