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29 Mar 2004

Volume 84, Issue 13, pp. 2223-2459

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Appl. Phys. Lett. 84, 2244 (2004); http://dx.doi.org/10.1063/1.1690471 (3 pages)

David R. Smith, David Schurig, Jack J. Mock, Pavel Kolinko, and Patrick Rye
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Effect of interfaces in Monte Carlo computer simulations of ferroelectric materials

D. Bolten, U. Böttger, and R. Waser

Appl. Phys. Lett. 84, 2379 (2004); http://dx.doi.org/10.1063/1.1687455 (3 pages) | Cited 9 times

Online Publication Date: 23 March 2004

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In this article, Monte Carlo simulation methods were used to investigate the influence of interface layers between the ferroelectric core material and the electrodes on the hysteresis loop in ferroelectric thin films. The hysteresis loops were calculated using an existing Monte Carlo model. For certain interface configurations, the simulations resulted in asymmetric hysteresis loops, similar to imprinted loops, due to asymmetric nucleation kinetics. Although the results might not offer a new explanation for imprint in ferroelectric thin films, they provide insight into the often observed phenomenon of initially imprinted hysteresis loops of as-prepared thin-film samples. © 2004 American Institute of Physics.
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77.80.Dj Domain structure; hysteresis
77.55.-g Dielectric thin films
02.70.Uu Applications of Monte Carlo methods

Three-dimensional ferroelectric domain imaging of bulk Pb(Zr,Ti)O3 by atomic force microscopy

Seungbum Hong, Bastien Ecabart, Enrico L. Colla, and Nava Setter

Appl. Phys. Lett. 84, 2382 (2004); http://dx.doi.org/10.1063/1.1655695 (3 pages) | Cited 16 times

Online Publication Date: 23 March 2004

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We report on the ferroelectric domain evolution as a function of the depth of the surface of 100 μm thick bulk Pb(Zr,Ti)O3 (PZT) doped with 2% Nb. Ferroelectric domain imaging (FDI) was performed by piezoelectric detection assisted by atomic force microscopy (AFM). The depth evolution of the polarization orientation was obtained by repeated surface chemical etching followed by FDI. It was observed that backswitching mainly occurred close to 90° domain and grain boundaries. The depth of these domains was estimated to be about 500 nm. This indicates that nonpenetrating domains of opposite polarity can retain their polarization vector near the surface region without the help of a top electrode interface. It also supports the idea that they act as preferential nucleation sites for polarization reversal. We suggest that AFM FDI combined with proper etching methods could be used to construct a three-dimensional image of the whole domain structure by stacking two-dimensional images layer by layer. © 2004 American Institute of Physics.
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77.80.Dj Domain structure; hysteresis
68.37.Ps Atomic force microscopy (AFM)
81.65.Cf Surface cleaning, etching, patterning
61.72.Mm Grain and twin boundaries

Crossover between extrinsic and intrinsic dielectric loss mechanisms in SrTiO3 thin films at microwave frequencies

K. F. Astafiev, V. O. Sherman, A. K. Tagantsev, N. Setter, T. Kaydanova, and D. S. Ginley

Appl. Phys. Lett. 84, 2385 (2004); http://dx.doi.org/10.1063/1.1690878 (3 pages) | Cited 9 times

Online Publication Date: 23 March 2004

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The dc bias field dependence of the dielectric loss in SrTiO3 thin films deposited onto MgO substrate is investigated. The experimental data obtained at different frequencies of the ac field (8 and 16 GHz) from differently processed films (as deposited and oxygen annealed) strongly suggest the occurrence of a crossover in the dominant loss mechanism. The crossover is driven by the dc bias field: at weak fields the loss is governed by an extrinsic mechanism(s) whereas, at higher fields, the contribution of an intrinsic mechanism (dc field-induced quasi-Debye loss) becomes predominant. © 2004 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.22.Gm Dielectric loss and relaxation

Direct evidence of ferroelastic participation in 180° polarization switching and fatigue for 111 oriented rhombohedral ferroelectric 0.955 Pb(Zn1/3Nb2/3)O3:0.045 PbTiO3 single crystals

Wenyi Zhu and L. Eric Cross

Appl. Phys. Lett. 84, 2388 (2004); http://dx.doi.org/10.1063/1.1690869 (3 pages) | Cited 3 times

Online Publication Date: 23 March 2004

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Direct elastic deformation measurements taken during polarization reversal in 111 oriented 0.955 Pb(Zn1/3Nb2/3)O3–0.045 PbTiO3 single crystals confirm the observation by W. Cao [Ferroelectrics 290, 107 (2003)] that a ferroelastic reorientation of the domain polarization vectors is involved, and the observed strain changes are consistent with the model he proposed. First cycle nonrecoverable fatigue occurring in our crystals and the associated changes of shape in polarization and strain hysteresis are suggested to be due to microcracking associated with the large very rapid strain changes associate with the ferroelastic switching mode. © 2004 American Institute of Physics.
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77.80.Fm Switching phenomena
77.80.Dj Domain structure; hysteresis
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
62.20.M- Structural failure of materials
77.22.Ej Polarization and depolarization
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