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29 Mar 2004

Volume 84, Issue 13, pp. 2223-2459

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Appl. Phys. Lett. 84, 2244 (2004); http://dx.doi.org/10.1063/1.1690471 (3 pages)

David R. Smith, David Schurig, Jack J. Mock, Pavel Kolinko, and Patrick Rye
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Highly directional emission from colloidally synthesized nanocrystals in vertical cavities with small mode spacing

J. Roither, W. Heiss, D. V. Talapin, N. Gaponik, and A. Eychmuller

Appl. Phys. Lett. 84, 2223 (2004); http://dx.doi.org/10.1063/1.1687998 (3 pages) | Cited 13 times

Online Publication Date: 23 March 2004

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The optical properties of light emitting devices based on colloidally synthesized CdSe/CdS core/shell semiconductor nanocrystals embedded in vertical cavities are investigated. The cavities are several micrometers, thick and formed by a metallic mirror and a dielectric Bragg interference mirror deposited on the opposite surfaces of cleaved pristine mica sheets. Due to the large cavity length, up to 30 resonances are found within the Bragg mirror stop band. The corresponding small mode spacing allows one to extract a large portion of the broad nanocrystal luminescence band from the cavity upon optical excitation. The spontaneous emission of these cavities is highly forward directed with a beam divergence smaller than 1.3°. Furthermore, the emission is linearly polarized which is a result of the birefringent properties of the mica sheets. © 2004 American Institute of Physics.
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78.66.Hf II-VI semiconductors
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
78.20.Fm Birefringence
78.55.Et II-VI semiconductors
85.60.Jb Light-emitting devices

In-plane-type channel drop filter in a two-dimensional photonic crystal slab

Hitomichi Takano, Yoshihiro Akahane, Takashi Asano, and Susumu Noda

Appl. Phys. Lett. 84, 2226 (2004); http://dx.doi.org/10.1063/1.1689742 (3 pages) | Cited 60 times

Online Publication Date: 23 March 2004

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An in-plane-type channel-drop filtering device with input/output waveguides and a point defect cavity in a two-dimensional photonic crystal slab is investigated. The in-plane operation becomes possible by employing a point defect cavity with an extremely high Q factor to suppress the radiation loss for the out-of-plane direction. 60° bends are also introduced in the output waveguide to avoid interference between the input/output waveguides. The transmission frequency range of the output waveguide with bends is tuned by changing the size of the air holes at the apex of the corner so that the resonant frequency of the point defect cavity is within the transmission band. A channel drop operation with a very high resolution of 0.12 nm is successfully observed at 1.55 μm wavelengths. © 2004 American Institute of Physics.
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42.70.Qs Photonic bandgap materials
42.79.Gn Optical waveguides and couplers
42.79.Ci Filters, zone plates, and polarizers

Terahertz-induced lensing and its use for the detection of terahertz pulses in a birefringent crystal

Arno Schneider, Ivan Biaggio, and Peter Günter

Appl. Phys. Lett. 84, 2229 (2004); http://dx.doi.org/10.1063/1.1688986 (3 pages) | Cited 24 times

Online Publication Date: 23 March 2004

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We demonstrate terahertz-induced lensing (TIL), the focusing and defocusing of an ultrashort “probe” laser pulse induced by a collinearly traveling terahertz pulse in an electro-optic crystal. The intensity change on the axis of the probe beam after the crystal is shown to be linear with the terahertz (THz) electric field and can thus be used to measure the THz wave form. We show that the sensitivity of TIL is comparable to conventional electro-optic sampling, with the advantage of being applicable to all classes of electro-optic crystals, including strongly birefringent ones. The better sensitivity of TIL is demonstrated using the highly birefringent organic salt DAST (4-N,N-dimethylamino-4′-N′-methyl stilbazolium tosylate). © 2004 American Institute of Physics.
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78.20.Fm Birefringence
78.20.Jq Electro-optical effects
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)

Demonstration of a 256×256 middle-wavelength infrared focal plane array based on InGaAs/InGaP quantum dot infrared photodetectors

J. Jiang, K. Mi, S. Tsao, W. Zhang, H. Lim, T. O’Sullivan, T. Sills, M. Razeghi, G. J. Brown, and M. Z. Tidrow

Appl. Phys. Lett. 84, 2232 (2004); http://dx.doi.org/10.1063/1.1688000 (3 pages) | Cited 37 times

Online Publication Date: 23 March 2004

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We report a demonstration of an infrared focal plane array based on InGaAs/InGaP quantum dot infrared photodetectors. The middle-wavelength infrared quantum-dot infrared photodetector (QDIP) structure was grown via low-pressure metal organic chemical vapor deposition. A detectivity of 3.6×1010 cm Hz1/2/W was achieved at T = 95 K and a bias of −1.4 V. The background limited temperature of our QDIP was 140 K with a 45° field of view. A 256×256 detector array was fabricated with dry etching, and hybridized to a Litton readout chip by indium bumps. Thermal imaging was achieved at temperatures up to 120 K. At T = 77 K, the noise equivalent temperature difference was measured as 0.509 K with a 300 K background and f/2.3 optics. © 2004 American Institute of Physics.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
81.07.Ta Quantum dots
81.05.Ea III-V semiconductors
68.65.Hb Quantum dots (patterned in quantum wells)
81.65.Cf Surface cleaning, etching, patterning

Coherent control of inhomogeneously broadened system by area-regulated pulse sequence

Noriaki Tsurumachi, Kazuhiro Komori, and Toshiaki Hattori

Appl. Phys. Lett. 84, 2235 (2004); http://dx.doi.org/10.1063/1.1689743 (3 pages) | Cited 1 time

Online Publication Date: 23 March 2004

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We have proposed a coherent control method that is available even for inhomogeneously broadened systems, which uses an area-regulated laser pulse sequence. It is expected to be applied to ultrafast optical devices without restriction of energy relaxation time. © 2004 American Institute of Physics.
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42.65.Re Ultrafast processes; optical pulse generation and pulse compression
78.47.-p Spectroscopy of solid state dynamics
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
73.21.La Quantum dots

High brightness GaInAs/(Al)GaAs quantum-dot tapered lasers at 980 nm with high wavelength stability

Sophie-Charlotte Auzanneau, Michel Calligaro, Michel Krakowski, Frank Klopf, Stefan Deubert, Johann Peter Reithmaier, and Alfred Forchel

Appl. Phys. Lett. 84, 2238 (2004); http://dx.doi.org/10.1063/1.1650913 (3 pages) | Cited 9 times

Online Publication Date: 23 March 2004

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High brightness (2 W with M2 = 3.4) is demonstrated at 980 nm using a gain-guided tapered GaInAs/(Al)GaAs quantum-dot laser. A remarkable low temperature shift (0.09 nm/K) of the emission wavelength is observed. Moreover, at 20 °C, the emission wavelength is quasiconstant as a function of the injected current. © 2004 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
81.05.Ea III-V semiconductors

Ultracompact, multifunctional, and highly integrated 3×2 photonic switches

Baojun Li, Jing Li, Yuzhou Zhao, Xubin Lin, Soo-Jin Chua, Lingyun Miao, Eugene A. Fitzgerald, Minjoo L. Lee, and Bharat S. Chaudhari

Appl. Phys. Lett. 84, 2241 (2004); http://dx.doi.org/10.1063/1.1688457 (3 pages) | Cited 4 times

Online Publication Date: 23 March 2004

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An ultracompact, multifunctional, and highly integrated photonic switch with a 3×2 configuration has been designed and fabricated with SiGe/Si material by using silicon-optical bench technology. This kind of switch can be used in fiber optic communications systems, photonic integrated circuits and wavelength division multiplexed networks as an optical power splitter, optical crossconnect, optical add-drop multiplexer, and wavelength division multiplexer simultaneously or individually. The function of the device is to combine multiwavelengths from different input channels and to switch them to different output channels. The operating wavelength range of the device is designed in C band, i.e., 1530–1570 nm. The device was characterized at 1540, 1550, and 1560 nm wavelengths. The performance at these wavelengths is found satisfactory. The measured insertion loss is less than 2 dB, ON/OFF ratio is greater than 30 dB, crosstalk is between −20 and −25 dB, and switching speed is 100–200 ns. © 2004 American Institute of Physics.
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42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Partial focusing of radiation by a slab of indefinite media

David R. Smith, David Schurig, Jack J. Mock, Pavel Kolinko, and Patrick Rye

Appl. Phys. Lett. 84, 2244 (2004); http://dx.doi.org/10.1063/1.1690471 (3 pages) | Cited 60 times

Online Publication Date: 23 March 2004

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Negative refraction can occur at the interface between vacuum and an indefinite medium—an anisotropic medium for which not all elements of the permittivity and permeability tensors have the same sign. We show experimentally and via simulations that a metamaterial composed of split ring resonators, designed to provide a permeability equal to −1 along the longitudinal axis, will redirect s-polarized electromagnetic waves from a nearby source to a partial focus. The dispersion characteristics of indefinite media prohibit the possibility of true aplanatic points for a planar slab; however, by contouring the surfaces aplanatic points may be realized, as well as other geometrical optical behavior. © 2004 American Institute of Physics.
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41.20.Jb Electromagnetic wave propagation; radiowave propagation
77.22.Ch Permittivity (dielectric function)
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Morphological properties of GaN quantum dots doped with Eu

Y. Hori, D. Jalabert, T. Andreev, E. Monroy, M. Tanaka, O. Oda, and B. Daudin

Appl. Phys. Lett. 84, 2247 (2004); http://dx.doi.org/10.1063/1.1690467 (3 pages) | Cited 14 times

Online Publication Date: 23 March 2004

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Morphological properties of Eu-doped GaN quantum dots grown by molecular beam epitaxy have been studied. Eu tends to segregate on the surface of AlN and GaN, leading to drastic changes in adatom kinetics. As a consequence, both size and density of Eu-doped GaN quantum dots strongly depend on the Eu flux used during the growth. © 2004 American Institute of Physics.
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81.07.Ta Quantum dots
68.65.Hb Quantum dots (patterned in quantum wells)
68.35.B- Structure of clean surfaces (and surface reconstruction)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
61.72.uj III-V and II-VI semiconductors
68.37.Ps Atomic force microscopy (AFM)
68.35.Dv Composition, segregation; defects and impurities

Rewritable phase-change optical recording in Ge2Sb2Te5 films induced by picosecond laser pulses

J. Siegel, A. Schropp, J. Solis, C. N. Afonso, and M. Wuttig

Appl. Phys. Lett. 84, 2250 (2004); http://dx.doi.org/10.1063/1.1689756 (3 pages) | Cited 41 times

Online Publication Date: 23 March 2004

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The phase transformation dynamics induced in Ge2Sb2Te5 films by picosecond laser pulses were studied using real-time reflectivity measurements with subnanosecond resolution. Evidence was found that the thermal diffusivity of the substrate plays a crucial role in determining the ability of the films to crystallize and amorphize. A film/substrate configuration with optimized heat flow conditions for ultrafast phase cycling with picosecond laser pulses was designed and produced. In this system, we achieved reversible phase transformations with large optical contrast (>20%) using single laser pulses with a duration of 30 ps within well-defined fluence windows. The amorphization (writing) process is completed within less than 1 ns, whereas crystallization (erasing) needs approximately 13 ns to be completed. © 2004 American Institute of Physics.
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42.79.Vb Optical storage systems, optical disks
42.79.Wc Optical coatings
61.82.Ms Insulators
81.30.Hd Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder
64.70.K- Solid-solid transitions

GaN micro-light-emitting diode arrays with monolithically integrated sapphire microlenses

H. W. Choi, C. Liu, E. Gu, G. McConnell, J. M. Girkin, I. M. Watson, and M. D. Dawson

Appl. Phys. Lett. 84, 2253 (2004); http://dx.doi.org/10.1063/1.1690876 (3 pages) | Cited 43 times

Online Publication Date: 23 March 2004

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GaN micro-light-emitting diodes (micro-LEDs) with monolithically integrated microlenses have been demonstrated. Microlenses, with a focal length of 44 μm and a root mean square roughness of ∼1 nm, have been fabricated on the polished back surface of a sapphire substrate of an array of micro-LEDs by resist thermal reflow and plasma etching. The optical properties of the microlenses have been demonstrated to alter the emission pattern of the LED emitters. The cone of light emitted from this hybrid device is significantly less divergent than a conventional broad-area device. This combination of micro-LED and microlens technologies offers the potential for further improvement in the overall efficiency of GaN-based light emitters. © 2004 American Institute of Physics.
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85.60.Jb Light-emitting devices
81.65.Cf Surface cleaning, etching, patterning
52.77.Bn Etching and cleaning
68.35.B- Structure of clean surfaces (and surface reconstruction)
85.60.Bt Optoelectronic device characterization, design, and modeling
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