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29 Mar 2004

Volume 84, Issue 13, pp. 2223-2459

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Appl. Phys. Lett. 84, 2244 (2004); http://dx.doi.org/10.1063/1.1690471 (3 pages)

David R. Smith, David Schurig, Jack J. Mock, Pavel Kolinko, and Patrick Rye
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Super-resolution in laser annealing and ablation

Ivan Avrutsky, Daniel G. Georgiev, Dmitry Frankstein, Gregory Auner, and Golam Newaz

Appl. Phys. Lett. 84, 2391 (2004); http://dx.doi.org/10.1063/1.1688995 (3 pages) | Cited 12 times

Online Publication Date: 23 March 2004

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This letter reports observation of ablated holes as small as 0.7 μm fabricated by single 25 ns pulses of KrF (λ = 248 nm) laser focused onto a 5.6 μm spot. Samples with high thermal conductivity films with respect to that of the substrate (Si/silica, Al/glass) repeatedly showed considerable reduction in the size of the ablated spot (0.7- and 1.2-μm-diam holes, respectively). This letter also presents a likely mechanism of the observed super-resolution and the criteria necessary to achieve super-resolution. Due to the nonoptical origin of this effect it is expected that a tightly focused (<0.5 μm) laser beam can be used to ablate with nanoscale (<100 nm) resolution. © 2004 American Institute of Physics.
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61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
79.20.Ds Laser-beam impact phenomena
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
81.20.Wk Machining, milling
07.10.Cm Micromechanical devices and systems
06.60.Vz Workshop procedures (welding, machining, lubrication, bearings, etc.)

Direct observation of metal complex nanoparticles doped in sol-gel silica glasses using transmission electron microscopy

M. Baba, M. Ichihara, R. A. Ganeev, M. Suzuki, H. Kuroda, M. Morita, D. Rau, T. Ishii, and M. Iwamura

Appl. Phys. Lett. 84, 2394 (2004); http://dx.doi.org/10.1063/1.1688980 (3 pages) | Cited 5 times

Online Publication Date: 23 March 2004

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Sol-gel silica glasses are good nanoporous matrices and are able to confine various phosphors as dopants, so these are quite interesting and strategic materials and show phenomena such as surface-enhanced quantum confinement effects: high luminescence quantum efficiency and ultrafast decay times. We observed directly clear images of metal complex nanoparticles in those with transmission electron microscopy. This can easily improve the quality of uniformly doped sol-gel silica glasses. © 2004 American Institute of Physics.
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61.46.-w Structure of nanoscale materials
78.55.Qr Amorphous materials; glasses and other disordered solids
78.55.Mb Porous materials
68.37.Lp Transmission electron microscopy (TEM)

Space-resolved photoluminescence of ZnS:Cu,Al nanocrystals fabricated by sequential ion implantation

Atsushi Ishizumi, C. W. White, and Yoshihiko Kanemitsu

Appl. Phys. Lett. 84, 2397 (2004); http://dx.doi.org/10.1063/1.1689738 (3 pages) | Cited 19 times

Online Publication Date: 23 March 2004

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We report on photoluminescence (PL) properties of Cu- and Al-doped ZnS nanocrystals fabricated by sequential implantation of Zn+, S+, Cu+, and Al+ ions into Al2O3 matrices. The spatially resolved PL spectrum has been studied by a scanning near-field optical microscope (SNOM). In the SNOM image, bright spots are observed on the sample surface. The PL spectrum at each bright spot is broad and is not sensitive to the monitored positions. The broad SNOM-PL spectrum at each spot is very similar to the macroscopic PL spectrum measured by conventional optics. The donor-acceptor pair luminescence process in nanocrystals is discussed. © 2004 American Institute of Physics.
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81.07.Bc Nanocrystalline materials
78.55.Et II-VI semiconductors
61.72.uj III-V and II-VI semiconductors
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters

Photoelectronic transport imaging of individual semiconducting carbon nanotubes

Kannan Balasubramanian, Yuwei Fan, Marko Burghard, Klaus Kern, Marcel Friedrich, Uli Wannek, and Alf Mews

Appl. Phys. Lett. 84, 2400 (2004); http://dx.doi.org/10.1063/1.1688451 (3 pages) | Cited 42 times

Online Publication Date: 23 March 2004

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Photoconductivity in individual semiconducting single-wall carbon nanotubes was investigated using a confocal scanning optical microscope. The magnitude of the photocurrent was found to increase linearly with the laser intensity, and to be maximum for parallel orientation between the light polarization and the tube axis. Larger currents were obtained upon illuminating the tubes at 514.5 nm in comparison to those at 647.1 nm, consistent with the semiconducting tubes having a resonant absorption energy at the former wavelength. Moreover, the determination of the photoresponse as a function of position along single nanotubes has proven to be a useful tool to monitor local electronic structure effects. © 2004 American Institute of Physics.
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73.63.Fg Nanotubes
61.46.-w Structure of nanoscale materials
72.40.+w Photoconduction and photovoltaic effects
78.30.Hv Other nonmetallic inorganics

Single graphene sheet detected in a carbon nanofilm

Shigeo Horiuchi, Takuya Gotou, Masahiro Fujiwara, Toru Asaka, Tadahiro Yokosawa, and Yoshio Matsui

Appl. Phys. Lett. 84, 2403 (2004); http://dx.doi.org/10.1063/1.1689746 (3 pages) | Cited 37 times

Online Publication Date: 23 March 2004

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In order to clarify the existence of a single sheet of carbon six-membered-ring plane (graphene) this letter presents a method by which the stacking number of the sheets in a carbon nanofilm (CNF) can be exactly counted, based on the quantitative analysis of electron diffraction intensity. Using the method we can detect a single graphene sheet in a CNF. © 2004 American Institute of Physics.
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61.46.-w Structure of nanoscale materials
82.80.-d Chemical analysis and related physical methods of analysis

Nanoscale thin single-crystal silicon and its application to electronics

Uygar Avci and Sandip Tiwari

Appl. Phys. Lett. 84, 2406 (2004); http://dx.doi.org/10.1063/1.1689745 (3 pages) | Cited 4 times

Online Publication Date: 23 March 2004

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We demonstrate a method for achieving thin (tens of nanometers) single-crystal silicon films with electronic-quality bulk and surface properties, atomic-scale surface roughness, and suitable for use in complex multilayered structures. The thin silicon film is achieved by defining thickness through the use of oxidation depth as a reference, transfer of film structure by exfoliation, and chemical-mechanical polishing for selective thin film definition. Such structures are useful in a variety of directions: in electronic devices such as field-effect transistors, in characterization studies such as those utilizing vertical transport using thicknesses of the order of mean free path length, etc. We demonstrate its use in a silicon metal-oxide-semiconductor transistor with two gates, one on each side of the thin silicon film on a planar substrate. © 2004 American Institute of Physics.
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81.07.Bc Nanocrystalline materials
85.30.Tv Field effect devices
68.35.B- Structure of clean surfaces (and surface reconstruction)
81.65.Mq Oxidation
81.65.Ps Polishing, grinding, surface finishing
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Direct carrier multiplication due to inverse Auger scattering in CdSe quantum dots

Marco Califano, Alex Zunger, and Alberto Franceschetti

Appl. Phys. Lett. 84, 2409 (2004); http://dx.doi.org/10.1063/1.1690104 (3 pages) | Cited 40 times

Online Publication Date: 23 March 2004

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Many optoelectronic devices could achieve much higher efficiencies if the excess energy of electrons excited well above the conduction band minimum could be used to promote other valence electrons across the gap rather than being lost to phonons. It would then be possible to obtain two electron–hole pairs from one. In bulk materials, this process is inherently inefficient due to the constraint of simultaneous energy and momentum conservation. We calculated the rate of these processes, and of selected competing ones, in CdSe colloidal dots, using our semi-empirical nonlocal pseudopotential approach. We find much higher carrier multiplication rates than in conventional bulk materials for electron excess energies just above the energy gap Eg. We also find that in a neutral dot, the only effective competing mechanism is Auger cooling, whose decay rates can be comparable to those calculated for the carrier multiplication process. © 2004 American Institute of Physics.
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73.21.La Quantum dots
73.63.Kv Quantum dots

Double-wall carbon nanotube field-effect transistors: Ambipolar transport characteristics

Takashi Shimada, Toshiki Sugai, Yutaka Ohno, Shigeru Kishimoto, Takashi Mizutani, Hiromichi Yoshida, Toshiya Okazaki, and Hisanori Shinohara

Appl. Phys. Lett. 84, 2412 (2004); http://dx.doi.org/10.1063/1.1689404 (3 pages) | Cited 48 times

Online Publication Date: 23 March 2004

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Double-wall carbon nanotubes (DWNTs) have been used as channels of field-effect transistors (FETs) to obtain information on their transport characteristics. DWNTs-FETs show metallic or semiconducting behavior depending on the tube diameters. All the semiconducting DWNTs have exhibited both p- and n-type characteristics, the so-called ambipolar behavior which is absent in normal SWNTs-FETs. Comparisons between the subthreshold swing (S) factor of DWNTs and that of SWNTs indicate that DWNTs are better FET channels than SWNTs. © 2004 American Institute of Physics.
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85.35.Kt Nanotube devices
85.30.Tv Field effect devices

Photonic bandgaps in patterned waveguides of silicon-rich silicon dioxide

R. T. Neal, M. E. Zoorob, M. D. Charlton, G. J. Parker, C. E. Finlayson, and J. J. Baumberg

Appl. Phys. Lett. 84, 2415 (2004); http://dx.doi.org/10.1063/1.1690106 (3 pages) | Cited 7 times

Online Publication Date: 23 March 2004

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We describe waveguides of photoluminescent silicon-rich silicon dioxide, which have been patterned by triangular two-dimensional (2D) photonic crystals to give higher-order photonic bandgaps occurring within the luminescence band of the core material. Photonic crystal modification of the photoluminescence spectrum allows identification of angle-tuned photonic bandgaps, in close agreement with 2D plane wave expansion and finite-difference time domain simulations. We discuss the importance of these findings for the development of integrated optical circuitry based on silicon-compatible microelectronics. © 2004 American Institute of Physics.
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42.82.Et Waveguides, couplers, and arrays
42.70.Qs Photonic bandgap materials
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Local switching properties of dense nanocrystalline BaTiO3 ceramics

Liliana Mitoseriu, Catalin Harnagea, Paolo Nanni, Andrea Testino, Maria Teresa Buscaglia, Vincenzo Buscaglia, Massimo Viviani, Zhe Zhao, and Mats Nygren

Appl. Phys. Lett. 84, 2418 (2004); http://dx.doi.org/10.1063/1.1695201 (3 pages) | Cited 25 times

Online Publication Date: 23 March 2004

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The switching properties of dense BaTiO3 ceramics with 50 nm average grain size were investigated at local scale by piezoresponse force microscopy. Large areas with low piezoelectrical activity beside islands with strong piezoresponse were found. The application of electric fields induces stable domain structures and changes in the polarization state far away from the probing area, probably via trans-granular dipole interactions. Piezoelectric hysteresis loops were recorded on various positions, even in regions with initial zero piezoresponse, which possibly showed a superparaelectric behavior. The results are incontestable proof that 50 nm BaTiO3 ceramics retain ferroelectricity at a local scale. © 2004 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Dj Domain structure; hysteresis
77.80.Fm Switching phenomena
77.22.Ej Polarization and depolarization
61.46.-w Structure of nanoscale materials
68.35.B- Structure of clean surfaces (and surface reconstruction)

Formation of embedded Co nanoparticles by reaction in Al/Co multilayers and impact on phase sequence

P. Gas, C. Bergman, J. L. Lábár, P. B. Barna, and F. M. d’Heurle

Appl. Phys. Lett. 84, 2421 (2004); http://dx.doi.org/10.1063/1.1690466 (3 pages) | Cited 2 times

Online Publication Date: 23 March 2004

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The analysis of solid-state reaction in Al/Co multilayers shows that, after the first reaction step which is the formation of Al9Co2, the remaining Co “layer” can either be continuous or formed of Co nanoparticles. Simultaneously with this formation of Co nanoparticles we observe a bifurcation in the phase sequence, the second reaction product is different and its formation takes place at different temperatures. Thermodynamic considerations, namely modification of free energy by curvature and stress are used to explain that the change in the phase sequence is a result of the nanostructuration of the Co layer. © 2004 American Institute of Physics.
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81.07.Bc Nanocrystalline materials
82.40.Bj Oscillations, chaos, and bifurcations
65.80.-g Thermal properties of small particles, nanocrystals, nanotubes, and other related systems
66.30.Ny Chemical interdiffusion; diffusion barriers
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