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29 Mar 2004

Volume 84, Issue 13, pp. 2223-2459

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Appl. Phys. Lett. 84, 2244 (2004); http://dx.doi.org/10.1063/1.1690471 (3 pages)

David R. Smith, David Schurig, Jack J. Mock, Pavel Kolinko, and Patrick Rye
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Extended shape evolution of low mismatch Si1−xGex alloy islands on Si(100)

E. Sutter, P. Sutter, and J. E. Bernard

Appl. Phys. Lett. 84, 2262 (2004); http://dx.doi.org/10.1063/1.1669068 (3 pages) | Cited 34 times

Online Publication Date: 23 March 2004

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The sequence of shape transitions in low mismatch, dilute coherent Si1−xGex (x<0.2) alloy islands was documented by scanning tunneling microscopy and cross-sectional transmission electron microscopy. In dilute Si1−xGex islands we observe an extended shape evolution involving a new “barn” shape formed by introduction of steep {111} facets not observed at higher mismatch strain. This extended shape evolution implies a delayed onset of plastic deformation as a result of an altered competition between strain relaxation via coherent islands and the introduction of dislocations in this regime. © 2004 American Institute of Physics.
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68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.47.Fg Semiconductor surfaces
68.55.-a Thin film structure and morphology
68.37.Lp Transmission electron microscopy (TEM)
62.20.F- Deformation and plasticity
81.40.Lm Deformation, plasticity, and creep
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)

Free carrier absorption in heavily doped silicon layers

Joerg Isenberg and Wilhelm Warta

Appl. Phys. Lett. 84, 2265 (2004); http://dx.doi.org/10.1063/1.1690105 (3 pages) | Cited 6 times

Online Publication Date: 23 March 2004

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The standard parametrization of free carrier absorption in silicon predicting a linear dependence of the absorption on carrier concentration is revised, finding that due to several simplifications, it is only applicable up to carrier densities of about 3×1016 cm−3. A parametrization applicable for both p- and n-type silicon and for doping densities as high as 1021 cm−3 is introduced. Using this parametrization, considerably better agreement between the emitter sheet resistance of diffused layers measured by IR transmission and electrical measurements is found, proving the applicability of the enhanced model even for heavily doped layers. Additionally, parameters for the dependence of the refractive index of silicon on doping concentration are given. © 2004 American Institute of Physics.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.61.Cw Elemental semiconductors
78.30.Am Elemental semiconductors and insulators

GaN epitaxy on thermally treated c-plane bulk ZnO substrates with O and Zn faces

Xing Gu, Michael A. Reshchikov, Ali Teke, Daniel Johnstone, Hadis Morkoç, Bill Nemeth, and Jeff Nause

Appl. Phys. Lett. 84, 2268 (2004); http://dx.doi.org/10.1063/1.1690469 (3 pages) | Cited 26 times

Online Publication Date: 23 March 2004

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ZnO is considered as a promising substrate for GaN epitaxy because of stacking match and close lattice match to GaN. Traditionally, however, it suffered from poor surface preparation which hampered epitaxial growth in general and GaN in particular. In this work, ZnO substrates with atomically flat and terrace-like features were attained by annealing at high temperature in air. GaN epitaxial layers on such thermally treated basal plane ZnO with Zn and O polarity have been grown by molecular beam epitaxy, and two-dimensional growth mode was achieved as indicated by reflection high-energy electron diffraction. We observed well-resolved ZnO and GaN peaks in the high-resolution x-ray diffraction scans, with no Ga2ZnO4 phase detectable. Low-temperature photoluminescence results indicate that high-quality GaN can be achieved on both O- and Zn-face ZnO. © 2004 American Institute of Physics.
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81.05.Ea III-V semiconductors
68.55.A- Nucleation and growth
61.72.Cc Kinetics of defect formation and annealing
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
68.35.B- Structure of clean surfaces (and surface reconstruction)

Mapping of multiple-quantum-well layers and structure of V defects in InGaN/GaN diodes

H. Saijo, J. T. Hsu, R. C. Tu, M. Yamada, M. Nakagawa, J. R. Yang, and M. Shiojiri

Appl. Phys. Lett. 84, 2271 (2004); http://dx.doi.org/10.1063/1.1689740 (3 pages) | Cited 9 times

Online Publication Date: 23 March 2004

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Cathodoluminescence mapping reveals threading defects, frequently formed by the lattice misfit between GaN and sapphire substrate, as a dark contrast connected with changes in the energy state. Multiple quantum wells, 2.5 nm In0.25Ga0.75N and 13.9 nm GaN layers, are resolved in the secondary electron image as well as in the backscattered electron image. The backscattered electron image, providing compositional mapping without surface effects such as cleaved steps, reveals the presence of V defects and confirms the thin six-walled structure of the V defect with InGaN/GaN {101math} layers. These scanning electron microscopy observations can be performed after very simple specimen preparation, namely just cleaving the sapphire substrate with the epilayers. © 2004 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
73.21.Fg Quantum wells
71.55.Eq III-V semiconductors
61.72.Lk Linear defects: dislocations, disclinations
78.60.Hk Cathodoluminescence, ionoluminescence
79.20.Hx Electron impact: secondary emission
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
71.20.Nr Semiconductor compounds
85.60.Jb Light-emitting devices

Mechanical response of KD2xH2(1−x)PO4 crystals during nanoindentation

S. O. Kucheyev, W. J. Siekhaus, T. A. Land, and S. G. Demos

Appl. Phys. Lett. 84, 2274 (2004); http://dx.doi.org/10.1063/1.1690867 (3 pages) | Cited 6 times

Online Publication Date: 23 March 2004

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The deformation behavior of rapidly grown tetragonal KD2xH2(1−x)PO4 (KDP and DKDP) single crystals, with a deuteration degree x of 0.0, 0.3, and 0.6, is studied by nanoindentation with a 1 μm radius spherical indenter. Within experimental error, the deformation behavior is found to be independent of the deuterium content and different for (001) and (100) surfaces. Multiple discontinuities (so-called “pop-in” events) in force-displacement curves are observed during indentation loading, but not during unloading. Slip is identified as the major mode of plastic deformation in DKDP, and pop-in events are attributed to the initiation of slip. © 2004 American Institute of Physics.
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81.40.Lm Deformation, plasticity, and creep
62.20.F- Deformation and plasticity
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
68.35.Gy Mechanical properties; surface strains
62.20.Qp Friction, tribology, and hardness

Passivation of Mn acceptors in GaMnAs

M. S. Brandt, S. T. B. Goennenwein, T. A. Wassner, F. Kohl, A. Lehner, H. Huebl, T. Graf, M. Stutzmann, A. Koeder, W. Schoch, and A. Waag

Appl. Phys. Lett. 84, 2277 (2004); http://dx.doi.org/10.1063/1.1690470 (3 pages) | Cited 22 times

Online Publication Date: 23 March 2004

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The effects of hydrogen and deuterium on ferromagnetic GaAs doped with high concentrations of Mn ( ≈ 1021 cm−3) are studied. Secondary ion mass spectroscopy depth profiles show that D is incorporated in the same concentration as Mn. The epilayers change from metallic to semiconducting behavior upon hydrogenation. Fourier transform infrared absorption measurements show the As–H and As–D local vibrational modes characteristic for the complexes of hydrogen with group-II acceptors in GaAs. © 2004 American Institute of Physics.
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71.55.Eq III-V semiconductors
78.30.Fs III-V and II-VI semiconductors
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
63.20.Pw Localized modes

Interpretation of anomalous temperature dependence of anti-Stokes photoluminescence at GaInP2/GaAs interface

S. J. Xu, Q. Li, J.-R. Dong, and S. J. Chua

Appl. Phys. Lett. 84, 2280 (2004); http://dx.doi.org/10.1063/1.1691496 (3 pages) | Cited 6 times

Online Publication Date: 23 March 2004

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In this letter, we report on temperature-dependent anti-Stokes photoluminescence (ASPL) at an interface between partially ordered GaInP2 epilayer and GaAs substrate. It is found that the intensity of the ASPL depends strongly on temperature accompanying with a clear blueshift in energy. A localized-state luminescence model was employed to quantitatively interpret temperature dependence of the ASPL. Excellent agreement between the theory and experiment was obtained. Radiative recombination mechanism of the up-converted carriers was discussed. © 2004 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors

Mature InAs quantum dots on the GaAs(114)A surface

M. C. Xu, Y. Temko, T. Suzuki, and K. Jacobi

Appl. Phys. Lett. 84, 2283 (2004); http://dx.doi.org/10.1063/1.1691196 (3 pages) | Cited 11 times

Online Publication Date: 23 March 2004

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InAs quantum dots (QDs), grown by molecular-beam epitaxy on GaAs(114)A surfaces, were studied in situ by atomically resolved scanning tunneling microscopy. At their mature stage, the QDs present a complicated but regular shape being bound by flat {110}, (111)A, and {2 5 11}A facets, and a steep part composed of rather variable combinations of {110}, (111)A, {mathmathmath}B, and {2 5 11} surfaces. The QD shape can be derived from mature InAs QDs on GaAs(001). © 2004 American Institute of Physics.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.65.Hb Quantum dots (patterned in quantum wells)
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)

Clear quantum-confined luminescence from crystalline silicon/SiO2 single quantum wells

Eun-Chel Cho, Martin A. Green, James Xia, Richard Corkish, Peter Reece, and Mike Gal

Appl. Phys. Lett. 84, 2286 (2004); http://dx.doi.org/10.1063/1.1691489 (3 pages) | Cited 23 times

Online Publication Date: 23 March 2004

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Crystalline silicon single quantum wells (QWs) were fabricated by high-temperature thermal oxidation of ELTRAN® (Epitaxial Layer TRANsfer) silicon-on-insulator (SOI) wafers. The Si layer thicknesses enclosed by thermal SiO2 range from 0.8 to 5 nm. Luminescence energies from such QWs vary from 1.77 to 1.35 eV depending on the Si layer thickness, without evidence for interface-mediated transition seen in earlier work. The ability to detect quantum-confined luminescence seems to arise from the use of ELTRAN SOI wafers, from suppressed interface state luminescence by high-temperature oxidation and, possibly, from interface matching by crystalline silicon oxide. © 2004 American Institute of Physics.
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78.67.De Quantum wells
68.65.Fg Quantum wells
81.07.St Quantum wells
81.65.Mq Oxidation
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