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5 Apr 2004

Volume 84, Issue 14, pp. 2473-2706

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Appl. Phys. Lett. 84, 2244 (2004); http://dx.doi.org/10.1063/1.1690471 (3 pages)

David R. Smith, David Schurig, Jack J. Mock, Pavel Kolinko, and Patrick Rye
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Organic electronics on paper

Florian Eder, Hagen Klauk, Marcus Halik, Ute Zschieschang, Günter Schmid, and Christine Dehm

Appl. Phys. Lett. 84, 2673 (2004); http://dx.doi.org/10.1063/1.1690870 (3 pages) | Cited 103 times

Online Publication Date: 1 April 2004

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We have fabricated organic thin-film transistors and ring oscillators on paper and on flexible polyetherether ketone film using small-molecule hydrocarbon pentacene as the semiconductor and solution-processed polyvinylphenol as the gate dielectric. Transistors on paper have a carrier mobility of 0.2 cm2/V s and an on/off current ratio of 106, similar to devices on polyetherether ketone. A signal propagation delay of 22 μs per stage was measured for pentacene ring oscillators on polyetherether ketone film, and a signal delay of 12 ms was obtained for ring oscillators on paper. © 2004 American Institute of Physics.
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84.30.Ng Oscillators, pulse generators, and function generators
85.30.Tv Field effect devices
72.20.Fr Low-field transport and mobility; piezoresistance

Amorphous boron carbon nitride as a pH sensor

C. L. Li, B. R. Huang, S. Chattopadhyay, K. H. Chen, and L. C. Chen

Appl. Phys. Lett. 84, 2676 (2004); http://dx.doi.org/10.1063/1.1691195 (3 pages) | Cited 5 times

Online Publication Date: 1 April 2004

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Amorphous boron carbon nitride (a-BCxNy) has been used as the sensing membrane in an extended gate field effect transistor for the measurement of pH of solutions. The a-BCxNy material was produced by dual gun magnetron sputtering and has been found to be a stable and sensitive pH sensor with sensitivities in the range of 40 mV/pH. The pH sensitivity, however, increased with increasing carbon content of the a-BCxNy sensing membrane and reached a maximum of 46 mV/pH for a carbon concentration of 47 at. %. The response times of these sensors are close to 6 s. The drain current, which is an indicator of the pH, remained stable (fluctuation of few microamperes) over a period of 10 min in the phosphate solution with varied pH, demonstrating a good stability of the sensing membrane. © 2004 American Institute of Physics.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
82.80.-d Chemical analysis and related physical methods of analysis
85.30.Tv Field effect devices

1.4 μm band electroluminescence from organic light-emitting diodes based on thulium complexes

F. X. Zang, Z. R. Hong, W. L. Li, M. T. Li, and X. Y. Sun

Appl. Phys. Lett. 84, 2679 (2004); http://dx.doi.org/10.1063/1.1695098 (3 pages) | Cited 36 times

Online Publication Date: 1 April 2004

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Near-infrared (NIR) electroluminescence (EL) devices have been fabricated employing thulium complexes as emitting materials. The EL emissions at 1.4 and 0.8 μm were observed from the devices of tris-(dibenzoylmethanato)-mono-(bathophenanthroline or 1,10-phenonthroline) thulium [Tm(DBM)3bath or Tm(DBM)3phen] at room temperature and assigned to 3F4–3H4 and 3F4–3H6 transitions of Tm3+ ions, respectively. By comparison with the NIR emissions of four Tm complexes with different ligands, it was found that the first ligand played a more important role for the Tm3+ ion emissions rather than the second one. In order to meet the requirement of optical communication, both Tm(DBM)3bath and erbium [Er] (DBM)3bath were incorporated into EL devices so that a broadened EL emission band ranging from 1.4 to 1.6 μm was obtained, showing the potential application of Tm complexes for optical communication systems. © 2004 American Institute of Physics.
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78.66.Qn Polymers; organic compounds
85.60.Jb Light-emitting devices
78.60.Fi Electroluminescence

Compositionally graded contact layers in quantum-well infrared photodetectors

J. W. Little and R. P. Leavitt

Appl. Phys. Lett. 84, 2682 (2004); http://dx.doi.org/10.1063/1.1697643 (3 pages)

Online Publication Date: 1 April 2004

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We have observed a threshold voltage, below which no photocurrent flows, in a class of midwave quantum-well infrared photodetectors using (In,Ga)As/(In,Al)As lattice matched to InP substrates. We propose that this threshold voltage is the result of internal fields established at the interface between doped contact layers and the doped quantum wells in the detector. We show that compositionally graded contact layers can be used to eliminate the threshold voltage and to enhance the low-bias performance of the detectors. © 2004 American Institute of Physics.
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72.40.+w Photoconduction and photovoltaic effects
73.63.Hs Quantum wells
85.60.Gz Photodetectors (including infrared and CCD detectors)
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
81.05.Ea III-V semiconductors

Enhancement-mode thin-film field-effect transistor using phosphorus-doped (Zn,Mg)O channel

Y. Kwon, Y. Li, Y. W. Heo, M. Jones, P. H. Holloway, D. P. Norton, Z. V. Park, and S. Li

Appl. Phys. Lett. 84, 2685 (2004); http://dx.doi.org/10.1063/1.1695437 (3 pages) | Cited 89 times

Online Publication Date: 1 April 2004

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We report on enhancement-mode ZnO-based field-effect transistors that utilize an acceptor-doped channel. In particular, the active channel is polycrystalline ZnO doped with Mg, to increase the band gap, and P, to decrease the electron carrier concentration. Devices are realized that display an on/off ratio of 103 and a channel mobility on the order of 5 cm2/V s. HfO2 serves as the gate dielectric. Capacitance–voltage properties measured across the gate indicate that the ZnO channel is n type. The use of acceptor doping improves the control of the initial channel conductance while having a minimal impact on channel mobility relative to undoped ZnO polycrystalline channels. © 2004 American Institute of Physics.
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85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling
71.55.Gs II-VI semiconductors
71.20.Nr Semiconductor compounds
61.72.uj III-V and II-VI semiconductors
73.61.Ga II-VI semiconductors

Three-terminal Si-based negative differential resistance circuit element with adjustable peak-to-valley current ratios using a monolithic vertical integration

Sung-Yong Chung, Niu Jin, Paul R. Berger, Ronghua Yu, Phillip E. Thompson, Roger Lake, Sean L. Rommel, and Santosh K. Kurinec

Appl. Phys. Lett. 84, 2688 (2004); http://dx.doi.org/10.1063/1.1690109 (3 pages) | Cited 19 times

Online Publication Date: 1 April 2004

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Si-based resonant bipolar transistors are demonstrated by the monolithic vertical integration of Si-based resonant interband tunnel diodes atop the emitter of Si/SiGe heterojunction bipolar transistors (HBTs) on a silicon substrate. In the common emitter configuration, IC versus VCE shows negative differential resistance characteristics. The resulting characteristics are adjustable peak-to-valley current ratios, including infinite and negative values, and tailorable peak current densities by the control of the HBT base current under room temperature operation. With the integrated RITD-HBT combination, latching properties which are the key operating principle for high-speed mixed-signal, memory, and logic circuitry, are experimentally demonstrated. © 2004 American Institute of Physics.
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85.30.Pq Bipolar transistors
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
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