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5 Apr 2004

Volume 84, Issue 14, pp. 2473-2706

Issue Cover Spotlight Figure

Appl. Phys. Lett. 84, 2244 (2004); http://dx.doi.org/10.1063/1.1690471 (3 pages)

David R. Smith, David Schurig, Jack J. Mock, Pavel Kolinko, and Patrick Rye
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Lithography-modulated self-assembly of small ferroelectric Pb(Zr,Ti)O3 single crystals

S. Bühlmann, P. Muralt, and S. Von Allmen

Appl. Phys. Lett. 84, 2614 (2004); http://dx.doi.org/10.1063/1.1690873 (3 pages) | Cited 24 times

Online Publication Date: 1 April 2004

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Triangular (111) and square-shaped (100) Pb(Zr,Ti)O3 single crystallites with lateral dimensions down to 50 nm and thickness of 20 nm have been grown using lithography-modulated self-assembly in an in situ sputter process. Epitaxial (111)-oriented Pt on a SrTiO3 single crystal served as the substrate. An epitaxial 2 nm thick rutile TiO2 film was grown and patterned into 100–200 nm wide attachment sites by electron beam lithography. The perovskite nucleation density was 60 times higher on TiO2 seeds than on bare Pt(111). © 2004 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.-e Ferroelectricity and antiferroelectricity
77.55.-g Dielectric thin films

Bias-temperature stability of ultrathin parylene-capped dielectrics: influence of surface oxygen on copper ion diffusion

Jay J. Senkevich, Pei-I. Wang, Chris J. Wiegand, and T.-M. Lu

Appl. Phys. Lett. 84, 2617 (2004); http://dx.doi.org/10.1063/1.1691488 (3 pages) | Cited 7 times

Online Publication Date: 1 April 2004

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The effect of interfacial oxygen on copper ion penetration was investigated with metal–insulator–semiconductor capacitor (MISCAP) structures with and without an ultrathin (50 Å) polymer-capping layer. The amount of interfacial oxygen and hence the degree of copper ion penetration could be affected by the thermal annealing of the MISCAPs at 150 and 250 °C and in inert and reducing environments. The bias-temperature stressing (BTS) of a Cu/50 Å parylene-N/3000 Å plasma-enhanced tetraethoxysilane (PETEOS)/200 Å thermal SiO2/Si MISCAP at 150 °C and 1 MV/cm and previously annealed at 250 °C in Ar-3%H2 resulted in no flatband voltage shift from as-annealed to 180 min of BTS. The lack of flatband voltage shift is indicative of no copper ion penetration and a stable dielectric. Under higher electric fields (1.5–2 MV/cm) and at 150 °C, the polymer-capped PETEOS dielectric hindered copper ion penetration, but did not prevent it. © 2004 American Institute of Physics.
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84.32.Tt Capacitors
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
61.72.Cc Kinetics of defect formation and annealing
73.61.Ph Polymers; organic compounds
66.30.Ny Chemical interdiffusion; diffusion barriers
68.35.Fx Diffusion; interface formation
77.84.Jd Polymers; organic compounds

Thermal stability of LaAlO3/Si deposited by laser molecular-beam epitaxy

X. B. Lu, X. Zhang, R. Huang, H. B. Lu, Z. H. Chen, W. F. Xiang, M. He, B. L. Cheng, H. W. Zhou, X. P. Wang, C. Z. Wang, and B. Y. Nguyen

Appl. Phys. Lett. 84, 2620 (2004); http://dx.doi.org/10.1063/1.1690880 (3 pages) | Cited 24 times

Online Publication Date: 1 April 2004

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High-k gate dielectric material LaAlO3 (LAO) films were deposited directly onto silicon substrates by laser molecular-beam epitaxy. The thermodynamic stability of LAO films deposited at different substrate temperatures and of LAO films postannealed at 1000 °C was studied by high-resolution transmission electron microscopy and capacitor–voltage measurements. These studies show that the interfacial reaction between the LAO film and silicon substrate is strongly correlated to the substrate temperature and ambient conditions. In oxygen containing ambient, the interfacial reaction often occurs not only during film deposition but also during the course of postannealing. LAO films annealed at 1000 °C in nitrogen ambient have better thermal stability with silicon than LAO films annealed in oxygen ambient do. Both kinds of films remain amorphous after 1000 °C annealing. © 2004 American Institute of Physics.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
77.55.-g Dielectric thin films
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.60.Dv Thermal stability; thermal effects
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
61.72.Cc Kinetics of defect formation and annealing
61.43.Er Other amorphous solids
77.22.Ch Permittivity (dielectric function)

Forced polarization of α-sapphire induced by coated LiNbO3 and LiTaO3 films

X. Yang, X. L. Wu, Y. Feng, J. Li, and M. Jiang

Appl. Phys. Lett. 84, 2623 (2004); http://dx.doi.org/10.1063/1.1703836 (3 pages) | Cited 1 time

Online Publication Date: 1 April 2004

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We have investigated the formation mechanism of the interfacial electric field in LiNbO3(or LiTaO3)/α-sapphire crystal structures, which is important in understanding the photoluminescence properties of this kind of ferroelectric film-coated crystal material. It is revealed that the interfacial electric field arises from the interfacial polarization charge generated during poling of LiNbO3(or LiTaO3) film near Curie temperature, which induces forced polarization of the α-sapphire crystal. As a result, lattice distortions of the α-sapphire crystal change the crystal field of Cr3+ ion in the sapphire crystal and therefore lead to intensity enhancement of R-line luminescence from Cr3+ centers. © 2004 American Institute of Physics.
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77.22.Ej Polarization and depolarization
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.B- Phase transitions and Curie point
71.70.Ch Crystal and ligand fields
78.55.Hx Other solid inorganic materials

Finite element modeling of piezoresponse in nanostructured ferroelectric films

J.-H. Li, L. Chen, V. Nagarajan, R. Ramesh, and A. L. Roytburd

Appl. Phys. Lett. 84, 2626 (2004); http://dx.doi.org/10.1063/1.1695641 (3 pages) | Cited 25 times

Online Publication Date: 1 April 2004

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Patterning thin ferroelectric films into discrete islands is an effective way to release the constraint imposed by a substrate and the unpoled nonpiezoactive surrounding film to enhance the film piezoresponse. The converse piezoresponse measured by the surface displacement of ferroelectric islands, with lateral size changing from a nanoscale to a continuous film, has been modeled using three-dimensional finite element method. The modeling has shown that piezodeformation of the islands results in a local deformation of a substrate in the vicinity of island. The deformation is larger when the substrate is softer. The deformation, together with clamping strain in the film, decreases the effective d33 of the film island. The effect of the top electrode on d33 measured by surface displacement is also modeled. The piezoresponse of different size island capacitors with PbZr0.5Ti0.5O3/SrTiO3/Si and PbZr0.2Ti0.8O3/SrTiO3 heterostructures has been calculated. The results of modeling are in good agreement with experimental data on d33 obtained by piezoresponse force microscopy. © 2004 American Institute of Physics.
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77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
61.46.-w Structure of nanoscale materials
77.65.Bn Piezoelectric and electrostrictive constants
62.20.D- Elasticity
81.40.Jj Elasticity and anelasticity, stress-strain relations
68.60.Bs Mechanical and acoustical properties
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
84.32.Tt Capacitors

Time-dependent dielectric breakdown of hydrogenated silicon carbon nitride thin films under the influence of copper ions

Hao Cui and Peter A. Burke

Appl. Phys. Lett. 84, 2629 (2004); http://dx.doi.org/10.1063/1.1703839 (3 pages) | Cited 7 times

Online Publication Date: 1 April 2004

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Time-dependent dielectric breakdown (TDDB) of hydrogenated silicon carbon nitride (H:SiCN) thin films deposited using a plasma-enhanced chemical vapor deposition has been studied using metal-insulator-semiconductor capacitors with Cu gate electrodes. The experimental TDDB data of these films agree excellently with the thermochemical E model where the time to breakdown decreases exponentially with an increase in the electric field and temperature. Breakdown of the H:SiCN films was found to be significantly accelerated by the presence of Cu ions in the films. The breakdown acceleration is believed to be caused by an electric field enhancement due to the accumulation of positively charged Cu ions. © 2004 American Institute of Physics.
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77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.22.Jp Dielectric breakdown and space-charge effects
77.55.-g Dielectric thin films
68.55.A- Nucleation and growth
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
84.32.Tt Capacitors
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