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5 Apr 2004

Volume 84, Issue 14, pp. 2473-2706

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Appl. Phys. Lett. 84, 2244 (2004); http://dx.doi.org/10.1063/1.1690471 (3 pages)

David R. Smith, David Schurig, Jack J. Mock, Pavel Kolinko, and Patrick Rye
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High-speed operation of quasi-one junction superconducting quantum interference device based on high-Tc multilayer technology

H. Sugiyama, H. Wakana, S. Adachi, Y. Tarutani, and K. Tanabe

Appl. Phys. Lett. 84, 2587 (2004); http://dx.doi.org/10.1063/1.1690496 (3 pages) | Cited 7 times

Online Publication Date: 1 April 2004

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We designed a quasi-one junction superconducting quantum interference device (QOS) based on single-flux-quantum technology using high-Tc superconductors. A circuit containing 10 interface-engineered ramp-edge Josephson junctions was fabricated on a La-substituted YBa2Cu3Oy ground plane. The output voltage as a function of the input current for the QOS indicated correct operation as a periodic comparator at clock frequency of 94 and 77 GHz at 35 and 40 K, respectively. A comparison of the observed maximum operating frequency with the product of the critical current and normal resistance for the junctions suggests that comparator operation above 100 GHz at 40 K is possible if one optimizes the junction parameters. © 2004 American Institute of Physics.
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74.72.-h Cuprate superconductors
74.78.-w Superconducting films and low-dimensional structures
85.25.Dq Superconducting quantum interference devices (SQUIDs)
74.78.Fk Multilayers, superlattices, heterostructures
68.65.Ac Multilayers
74.25.Sv Critical currents

Magnetic anisotropy control of SrRuO3 films by tunable epitaxial strain

C. U. Jung, Hiroyuki Yamada, M. Kawasaki, and Y. Tokura

Appl. Phys. Lett. 84, 2590 (2004); http://dx.doi.org/10.1063/1.1695195 (3 pages) | Cited 24 times

Online Publication Date: 1 April 2004

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We have investigated the effect of anisotropic structural modification through epitaxial strain on the magnetic properties in an itinerant ferromagnet SrRuO3. For giving tunable and anisotropic in-plane strain, variable thickness CaHfO3 buffer layer and SrTiO3 (STO) (110) substrate were employed, respectively. The strain could be tuned from compressive to tensile along in-plane STO[001]∥ direction, while keeping slightly compressive and coherent along another in-plane STO[1-10]∥ direction. Magnetic easy axis can always be aligned with elongated lattice direction either parallel or perpendicular to the surface, due to strong spin–orbit coupling. © 2004 American Institute of Physics.
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75.50.Dd Nonmetallic ferromagnetic materials
75.70.Ak Magnetic properties of monolayers and thin films
75.30.Gw Magnetic anisotropy
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
71.70.Ej Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect
75.80.+q Magnetomechanical effects, magnetostriction

Giant planar Hall effect in colossal magnetoresistive La0.84Sr0.16MnO3 thin films

Y. Bason, L. Klein, J.-B. Yau, X. Hong, and C. H. Ahn

Appl. Phys. Lett. 84, 2593 (2004); http://dx.doi.org/10.1063/1.1695197 (3 pages) | Cited 26 times

Online Publication Date: 1 April 2004

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The transverse resistivity in thin films of La0.84Sr0.16MnO3 (LSMO) exhibits sharp field-symmetric jumps below TC. We show that a likely source of this behavior is the giant planar Hall effect combined with biaxial magnetic anisotropy. The effect is comparable in magnitude to that observed recently in the magnetic semiconductor Ga(Mn)As. It can be potentially used in applications such as magnetic sensors and nonvolatile memory devices. © 2004 American Institute of Physics.
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75.50.Dd Nonmetallic ferromagnetic materials
75.47.Gk Colossal magnetoresistance
75.70.Ak Magnetic properties of monolayers and thin films
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
75.30.Gw Magnetic anisotropy
73.61.Ng Insulators

High-coercivity Co-ferrite thin films on (100)-SiO2 substrate

Y. C. Wang, J. Ding, J. B. Yi, B. H. Liu, T. Yu, and Z. X. Shen

Appl. Phys. Lett. 84, 2596 (2004); http://dx.doi.org/10.1063/1.1695438 (3 pages) | Cited 52 times

Online Publication Date: 1 April 2004

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Co-ferrite films were deposited on SiO2 single-crystal substrates. The as-deposited films were amorphous. The crystallization required an annealing at 700 °C or higher. Magnetic properties were found to be strongly dependent on annealing temperature, annealing duration, and film thickness. A small film thickness can restrict the formation of large particles. A coercivity as high as 9.3 kOe was achieved in the 50 nm film after annealing at 900 °C for 15 min deposited on (100)-SiO2 substrate. The high coercivity was associated with a nanostructure, lattice strain, and larger Raman shift with a relatively sharp peak. © 2004 American Institute of Physics.
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75.50.Vv High coercivity materials
75.50.Gg Ferrimagnetics
75.50.Kj Amorphous and quasicrystalline magnetic materials
75.50.Tt Fine-particle systems; nanocrystalline materials
75.70.Ak Magnetic properties of monolayers and thin films
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
64.70.K- Solid-solid transitions
81.30.Hd Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder
81.40.Gh Other heat and thermomechanical treatments
78.30.Hv Other nonmetallic inorganics
81.15.Cd Deposition by sputtering

On the origin of spin loss in GaMnN/InGaN light-emitting diodes

I. A. Buyanova, M. Izadifard, W. M. Chen, J. Kim, F. Ren, G. Thaler, C. R. Abernathy, S. J. Pearton, C.-C. Pan, G.-T. Chen, J.-I. Chyi, and J. M. Zavada

Appl. Phys. Lett. 84, 2599 (2004); http://dx.doi.org/10.1063/1.1695100 (3 pages) | Cited 22 times

Online Publication Date: 1 April 2004

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Spin polarization of GaMnN/InGaN light-emitting diodes grown by molecular beam epitaxy is analyzed. In spite of the ferromagnetic behavior of the GaMnN spin injector, the diodes are shown to exhibit very low efficiency of spin injection. Based on resonant optical orientation spectroscopy, the spin loss in the structures is shown to be largely due to fast spin relaxation within the InGaN spin detector, which itself destroys any spin polarization generated by optical spin orientation or electrical spin injection. © 2004 American Institute of Physics.
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85.60.Jb Light-emitting devices
75.50.Dd Nonmetallic ferromagnetic materials
72.25.Dc Spin polarized transport in semiconductors
72.25.Rb Spin relaxation and scattering
78.60.Fi Electroluminescence
78.55.Cr III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.66.Fd III-V semiconductors

Ferromagnetism at room temperature with a large magnetic moment in anatase V-doped TiO2 thin films

Nguyen Hoa Hong, Joe Sakai, and Awatef Hassini

Appl. Phys. Lett. 84, 2602 (2004); http://dx.doi.org/10.1063/1.1703848 (3 pages) | Cited 69 times

Online Publication Date: 1 April 2004

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V-doped TiO2 thin films were grown by laser ablation on LaAlO3 substrates. In the chosen range of the growth conditions, all V:TiO2 films have an anatase structure and exhibit semiconducting and ferromagnetic behaviors at room temperature. V:TiO2 films have a giant magnetic moment and they seem to be far better ferromagnetic than Co/Fe/Ni-doped TiO2 films. This study has proved that a few percent of V substituting for Ti in TiO2 can result in a potential diluted magnetic semiconductor. © 2004 American Institute of Physics.
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75.50.Pp Magnetic semiconductors
75.50.Dd Nonmetallic ferromagnetic materials
75.70.Ak Magnetic properties of monolayers and thin films
75.30.Cr Saturation moments and magnetic susceptibilities
81.15.Fg Pulsed laser ablation deposition
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
61.72.up Other materials
68.55.-a Thin film structure and morphology

On the feasibility of “measuring” crystal field parameters in a rotating-sample magnetometer

M. D. Kuz’min

Appl. Phys. Lett. 84, 2605 (2004); http://dx.doi.org/10.1063/1.1699470 (3 pages)

Online Publication Date: 1 April 2004

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It is argued that the crystal field parameters (CFPs) of rare-earth magnets can be determined by means of a rotating-sample magnetometer (RSM), recording the harmonics of magnetization Mn, n = 2,4,6, in a constant magnetic field, as temperature varies. The process of “measuring” individual CFP of order n can be as direct as observing the slope of the Mn-vs-T−n dependence at sufficiently high temperatures, necessarily in the paramagnetic region. Although the basic idea of the RSM is anything but new, its implementation is greatly facilitated by the recent technological developments, such as digital lock-in amplifiers, miniature stepper motors, and high-performance permanent magnets. © 2004 American Institute of Physics.
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07.55.Ge Magnetometers for magnetic field measurements
71.70.Ch Crystal and ligand fields

Spatial distribution and electronic state of Co in epitaxial anatase CoxTi1−xO2 thin films grown by reactive sputtering

B.-S. Jeong, Y. W. Heo, D. P. Norton, J. G. Kelly, R. Rairigh, A. F. Hebard, J. D. Budai, and Y. D. Park

Appl. Phys. Lett. 84, 2608 (2004); http://dx.doi.org/10.1063/1.1691499 (3 pages) | Cited 29 times

Online Publication Date: 1 April 2004

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The magnetic and phase properties of CoxTi1−xO2 anatase thin films grown epitaxially on (001) LaAlO3 by a reactive rf magnetron cosputter deposition have been examined. CoxTi1−xO2 (x = 0.07) thin films exhibit room-temperature ferromagnetism, as evidenced by hysteresis in M–H loop. Chemical mapping indicates segregation of the Co dopant atoms in these films. However, x-ray photoelectron spectroscopy suggests that the segregated Co is not metallic, but in the Co+2 state. These results are consistent with a segregated Ti–Co–O phase being responsible for the ferromagnetic behavior. © 2004 American Institute of Physics.
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75.50.Dd Nonmetallic ferromagnetic materials
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
64.75.-g Phase equilibria
68.55.Nq Composition and phase identification
75.70.Ak Magnetic properties of monolayers and thin films
81.30.Mh Solid-phase precipitation
81.15.Cd Deposition by sputtering
79.60.-i Photoemission and photoelectron spectra
75.50.Tt Fine-particle systems; nanocrystalline materials

Manganite-based heterojunction and its photovoltaic effects

J. R. Sun, C. M. Xiong, B. G. Shen, P. Y. Wang, and Y. X. Weng

Appl. Phys. Lett. 84, 2611 (2004); http://dx.doi.org/10.1063/1.1702128 (3 pages) | Cited 33 times

Online Publication Date: 1 April 2004

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A heterojunction is fabricated by growing a La0.29Pr0.38Ca0.33MnO3 (LPCM) film on the 0.5 wt % Nb-doped SrTiO3 (STON) substrate, and its properties have been experimentally studied. In addition to fairly good rectifying behavior, the heterojunction exhibits a significant photovoltaic effect. The photovoltage on the two electrodes LPCM and STON increases almost linearly with the power of the laser beam (λ = 532 nm) at a rate of ∼0.19 V/W, and no tendency to saturation is observed up to the light power of 100 mW. The lifetime of the extra carriers is between 7 and 9 ms (slightly pulse laser energy dependent), obtained from the decay of photovoltage after shutting down light illumination. The present work shows a great potential of the manganite-based heterojunction as photoelectric devices. © 2004 American Institute of Physics.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.50.Pz Photoconduction and photovoltaic effects
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
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