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12 Apr 2004

Volume 84, Issue 15, pp. 2721-2955

Issue Cover Spotlight Figure

Appl. Phys. Lett. 84, 2883 (2004); http://dx.doi.org/10.1063/1.1702137 (3 pages)

Pu Xian Gao and Zhong L. Wang
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Phosphorus ion implantation and POCl3 doping effects of n+-polycrystalline-silicon/high-k gate dielectric (HfO2 and Al2O3) films

Chihoon Lee, Jihoon Choi, Moonju Cho, Doo Seok Jeong, Cheol Seong Hwang, and Hyeong Joon Kim

Appl. Phys. Lett. 84, 2868 (2004); http://dx.doi.org/10.1063/1.1697646 (3 pages) | Cited 2 times

Online Publication Date: 7 April 2004

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Phosphorus (P)-doped polycrystalline-silicon gate/HfO2 or HfO2–Al2O3/p-type Si (100) metal–oxide–semiconductor capacitors were fabricated using either a POCl3 diffusion or an ion implantation technique to investigate the relationship between P penetration and the electrical properties of the high-k gate dielectric stacks. The HfO2–Al2O3 bilayer showed higher P diffusion blocking properties as a result of the 4.1-nm-thick amorphous interface layer including Al2O3 (or Al-silicate). The P ion-implanted sample with the HfO2–Al2O3 bilayer sample had the smallest leakage current density of −8.8×10−10 A/cm2 at −1 V, which was due to the lower P penetration, and the higher trap depth of approximately 1.3±0.02 eV compared to 0.9±0.02 eV of the sample with only HfO2. However, the P doping by POCl3 diffusion was too excessive and only very leaky devices were produced. © 2004 American Institute of Physics.
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84.32.Tt Capacitors
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
77.55.-g Dielectric thin films
61.72.up Other materials

Polarization imprint in ordered arrays of epitaxial ferroelectric nanostructures

Wenhui Ma and Dietrich Hesse

Appl. Phys. Lett. 84, 2871 (2004); http://dx.doi.org/10.1063/1.1703835 (3 pages) | Cited 26 times

Online Publication Date: 7 April 2004

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Sub 50-nm-high BaTiO3 epitaxial nanostructures were fabricated into well-ordered arrays on SrTiO3:Nb (001) single-crystal substrates using pulsed laser deposition through monolayer masks of monodisperse latex spheres (1 or 0.5 μm) and postdeposition annealing. Imprint was investigated in nanostructures of various dimensions using piezoresponse force microscopy. Piezoresponse domain imaging revealed a preferential downward prepolarization state for the as-prepared nanostructures, and consistently piezoresponse hysteresis loops exhibited negative polarization offsets. The offsets are suggested to be due to locked nonswitchable domains in an interface near region with a thickness of 7–14 nm. © 2004 American Institute of Physics.
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77.55.-g Dielectric thin films
61.46.-w Structure of nanoscale materials
77.22.Ej Polarization and depolarization
77.80.Dj Domain structure; hysteresis
77.80.Fm Switching phenomena
68.55.-a Thin film structure and morphology
68.35.B- Structure of clean surfaces (and surface reconstruction)
81.40.Gh Other heat and thermomechanical treatments
81.15.Fg Pulsed laser ablation deposition

Enhanced tunability and electrical properties of barium strontium titanate thin films by gold doping in grains

Hong-Wen Wang, Siu-Wei Nien, and Kuok-Chuan Lee

Appl. Phys. Lett. 84, 2874 (2004); http://dx.doi.org/10.1063/1.1710730 (3 pages) | Cited 14 times

Online Publication Date: 7 April 2004

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The effect of gold (Au) on the crystallization, dielectric constant, leakage current density, and tunability of dielectric constant of barium strontium titanate (BST) thin films was demonstrated. The leakage current density of BST films is greatly reduced by the Au dopant over a range of biases. The improved tunability of dielectric constant under electrical field for Au-doped BST films was also observed. The distribution of gold inside the BST grains not in the grain boundaries is confirmed by the electron energy loss spectroscopy (EELS) technique of transmission electron microscopy (TEM). The evidence suggested that the gold resides within the lattice of BST and additional internal lattice stresses could be expected in addition to catalysis effect and large electronegativity of gold. © 2004 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ch Permittivity (dielectric function)
77.55.-g Dielectric thin films
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