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12 Apr 2004

Volume 84, Issue 15, pp. 2721-2955

Issue Cover Spotlight Figure

Appl. Phys. Lett. 84, 2883 (2004); http://dx.doi.org/10.1063/1.1702137 (3 pages)

Pu Xian Gao and Zhong L. Wang
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Magnetic imprinting of submicron ferromagnetic wires on a diluted magnetic semiconductor quantum well

H. Schömig, A. Forchel, S. Halm, G. Bacher, J. Puls, and F. Henneberger

Appl. Phys. Lett. 84, 2826 (2004); http://dx.doi.org/10.1063/1.1695199 (3 pages) | Cited 13 times

Online Publication Date: 7 April 2004

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Hybrid structures consisting of submicron ferromagnetic dysprosium wires on a diluted magnetic semiconductor quantum well have been prepared and investigated by micro-magnetoluminescence spectroscopy. A magnetic field dependent redshift of the semiconductor band gap just beneath the dysprosium wires with respect to a reference area clearly demonstrates the impact of the magnetic fringe field on the optical properties of the underlying semiconductor. © 2004 American Institute of Physics.
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75.50.Pp Magnetic semiconductors
75.50.Cc Other ferromagnetic metals and alloys
78.67.De Quantum wells
68.65.Fg Quantum wells
78.20.Ls Magneto-optical effects
78.55.Et II-VI semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
71.20.Nr Semiconductor compounds
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)

Hall mobility of narrow Si0.2Ge0.8–Si quantum wells on Si0.5Ge0.5 relaxed buffer substrates

S. Tsujino, C. V. Falub, E. Müller, M. Scheinert, L. Diehl, U. Gennser, T. Fromherz, A. Borak, H. Sigg, D. Grützmacher, Y. Campidelli, O. Kermarrec, and D. Bensahel

Appl. Phys. Lett. 84, 2829 (2004); http://dx.doi.org/10.1063/1.1695102 (3 pages) | Cited 17 times

Online Publication Date: 7 April 2004

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We studied in-plane transport of a two-dimensional hole gas in modulation-doped p-Si0.2Ge0.8 quantum wells (QWs) on Si0.5Ge0.5 relaxed buffer substrates with thicknesses L between 2.5 and 7 nm. We found that interface roughness scattering limits the low-temperature mobility μ of the samples with L between 2.5 and 4.5 nm. The interface roughness parameters were evaluated by fitting the experiment with the calculated μ limited by interface roughness scattering. We found that the obtained parameters were consistent with the values estimated from x-ray reflectivity and the transmission electron micrograph of the samples. When L is increased from 4.5 to 7 nm, μ increases only gradually and the highest μ of 0.44 m2/V s was observed for 7-nm-thick QWs. The scattering by defects, interface charge, and strain fluctuation are discussed as possible additional mobility-limiting mechanisms. © 2004 American Institute of Physics.
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73.21.Fg Quantum wells
73.63.Hs Quantum wells
68.35.Ct Interface structure and roughness
73.61.Cw Elemental semiconductors

Hopping transport in TiO2:Co: A signature of multiphase behavior

R. J. Kennedy, P. A. Stampe, Erhong Hu, Peng Xiong, Stephan von Molnár, and Yan Xin

Appl. Phys. Lett. 84, 2832 (2004); http://dx.doi.org/10.1063/1.1704857 (3 pages) | Cited 24 times

Online Publication Date: 7 April 2004

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TiO2:Co films have been grown in the rutile phase under varying oxygen growth pressures. Detailed microstructural analysis using transmission electron microscopy shows that reduced growth pressure increases the presence of cobalt clusters. The resistivity is found to follow a log(ρ) ∼ T−1/2 dependence over a wide temperature range. This behavior is characteristic of hopping transport in multiphase systems and implies the presence of cobalt clustering. Thus, transport measurements are shown to be sensitive to the appearance of metallic clusters in these systems and suggest a rapid method for determing the presence of clustering in these and other magnetically doped semiconductor systems. © 2004 American Institute of Physics.
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75.50.Pp Magnetic semiconductors
72.20.Ee Mobility edges; hopping transport
72.80.Jc Other crystalline inorganic semiconductors
75.70.Ak Magnetic properties of monolayers and thin films
68.55.-a Thin film structure and morphology
61.46.-w Structure of nanoscale materials
81.15.Fg Pulsed laser ablation deposition
61.72.S- Impurities in crystals
73.61.Le Other inorganic semiconductors

Temperature-dependent characteristics of Pt Schottky contacts on n-type ZnO

K. Ip, Y. W. Heo, K. H. Baik, D. P. Norton, S. J. Pearton, S. Kim, J. R. LaRoche, and F. Ren

Appl. Phys. Lett. 84, 2835 (2004); http://dx.doi.org/10.1063/1.1705726 (3 pages) | Cited 37 times

Online Publication Date: 7 April 2004

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The Schottky barrier height of Pt contacts on n-type (n ∼ 1016 cm−3) thin film ZnO deposited by pulsed laser deposition was obtained from current–voltage measurements as a function of temperature. The resulting values ranged from 0.61±0.04 eV at 25 °C to 0.46±0.06 eV at 100 °C with saturation current densities of 1.5×10−4 A cm−2 (25 °C) to 6.0×10−2 A cm−2 (100 °C), respectively. The reverse current magnitude was larger than predicted by thermionic emission alone. The measured barrier height for Pt on ZnO is similar to the value reported for both Au and Ag rectifying contacts on this material. © 2004 American Institute of Physics.
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73.40.Ns Metal-nonmetal contacts
73.30.+y Surface double layers, Schottky barriers, and work functions
68.55.A- Nucleation and growth
81.15.Fg Pulsed laser ablation deposition

Influence of surface and grain-boundary scattering on the resistivity of copper in reduced dimensions

W. Wu, S. H. Brongersma, M. Van Hove, and K. Maex

Appl. Phys. Lett. 84, 2838 (2004); http://dx.doi.org/10.1063/1.1703844 (3 pages) | Cited 53 times

Online Publication Date: 7 April 2004

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We examine the influence of surface and grain-boundary scattering on the total electrical resistivity of copper as dimensions are reduced close to the bulk electron mean free path (39 nm). Through resistivity and grain size characterization on copper wires with sizes down to 95×130 nm2 in a temperature range of 4.2 to 293 K, it was found that the influence of surface scattering is less than previously speculated, while grain-boundary scattering is dominant. A reduction of the background scattering length due to small grains accounts for the observed behavior. The reflection coefficient varies as expected from impurity enrichment in the grain boundaries. © 2004 American Institute of Physics.
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73.63.Nm Quantum wires

Structure and electrical activity of rare-earth dopants in GaN

J.-S. Filhol, R. Jones, M. J. Shaw, and P. R. Briddon

Appl. Phys. Lett. 84, 2841 (2004); http://dx.doi.org/10.1063/1.1710710 (3 pages) | Cited 40 times

Online Publication Date: 7 April 2004

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Density functional theory is used to investigate Eu, Er, and Tm rare earth (RE) impurities in GaN, paying particular attention to their structure, energetics, and electronic properties. The most stable site is when the RE is located at a Ga substitutional site but none of the defects possess deep energy levels. RE–VN close pairs are stable at temperatures greater than 1000 °C for 1 at. % RE doping and possess shallow levels possibly exciting intra-f luminescence in the visible. RE–VGa and RE-interstitial defects possess deep levels which exclude them as sources for visible RE-related luminescence. © 2004 American Institute of Physics.
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61.72.Bb Theories and models of crystal defects
61.72.uj III-V and II-VI semiconductors

InAs/GaP/InGaP high-temperature power Schottky rectifier

A. Chen and J. M. Woodall

Appl. Phys. Lett. 84, 2844 (2004); http://dx.doi.org/10.1063/1.1711180 (3 pages) | Cited 2 times

Online Publication Date: 7 April 2004

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An InAs/GaP/InGaP rectifier has been fabricated using a semiconductor-semiconductor “Schottky” junction to utilize the thermal stability of the semiconductor-semiconductor interface. The InAs/GaP/InGaP system demonstrates rectifying characteristics with an ideality factor of 2.3 and a current–voltage extracted barrier height of 0.96 eV. It exhibits low reverse bias leakage current and achieves breakdown electric field of 0.6 MV/cm. The InAs/GaP/InGaP system maintains the rectifying characteristics up to 600 °C. Further improvement of the thermal stability is expected to be achieved by reducing the diffusion of Si dopant atoms across the InAs/GaP interface at high temperature. © 2004 American Institute of Physics.
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73.30.+y Surface double layers, Schottky barriers, and work functions
85.30.Hi Surface barrier, boundary, and point contact devices
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