Magnetoelectrics, characterized by simultaneous ferroelectric and magnetic ordering, have potential applications in information storage, sensors, etc. However, there are very few materials exhibiting the coexistence of ferroelectric and ferromagnetic ordering at room temperature. Hence, in normal practice, desired magnetoelectric effect is achieved by growing heterostructures of ferroelectric and magnetic materials. Realization of heterostructures with desired properties is not only difficult but also involves complicated lengthy procedures. BiFeO3 is weakly ferroelectric and antiferromagnetic at and above room temperature. We have been successful in enhancing both the ferroelectric and the magnetic properties of BiFeO3 by partial substitution of Tb at Bi site. Thin films of Bi0.6Tb0.3La0.1FeO3, integrated on Si/SiO2/TiO2/Pt substrate by using pulsed laser deposition technique, show good ferroelectric and magnetic properties and also coupling between them. Single step growth of thin films with desired magnetoelectric properties is certainly a cost effective, reliable, and simple alternative to heterostructures. © 2004 American Institute of Physics.