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19 Apr 2004

Volume 84, Issue 16, pp. 2971-3207

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Appl. Phys. Lett. 84, 3139 (2004); http://dx.doi.org/10.1063/1.1710717 (3 pages)

Slava V. Rotkin and Karl Hess
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Enhanced electromechanical properties in all-polymer percolative composites

Jiang Yu Li, Cheng Huang, and Qiming Zhang

Appl. Phys. Lett. 84, 3124 (2004); http://dx.doi.org/10.1063/1.1702127 (3 pages) | Cited 29 times

Online Publication Date: 13 April 2004

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In this letter, we discuss the enhanced electrostriction and dielectric constant in an all-polymer percolative composite consisting of poly(vinylidene fluoride-trifluoroethylenechlorotrifluoroethylene) [P(VDF–TrFE–CTFE)] terpolymer matrix and polyaniline (PANI) conductive particles. Using a self-consistent approach, we calculate the dielectric constant and dielectric loss tangent of the composite in excellent agreement with experiments, and demonstrate that the electrostriction enhancement is due to the electric field fluctuation in P(VDF–TrFE–CTFE) matrix, which becomes dominant when the dielectric constant of the second phase is much larger than that of the matrix. The inhomogeneous field distribution in the matrix has also been used to estimate the breakdown field of the composite, which agrees well with experimental measurement. The study could be used to design and optimize electrostrictive composites with optimal electromechanical properties. © 2004 American Institute of Physics.
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77.65.Ly Strain-induced piezoelectric fields
77.22.Ch Permittivity (dielectric function)
77.22.Gm Dielectric loss and relaxation
61.41.+e Polymers, elastomers, and plastics

Polarization retention in Pb(Zr0.4Ti0.6)O3 capacitors with IrO2 top electrodes

B. S. Kang, D. J. Kim, J. Y. Jo, T. W. Noh, Jong-Gul Yoon, T. K. Song, Y. K. Lee, J. K. Lee, S. Shin, and Y. S. Park

Appl. Phys. Lett. 84, 3127 (2004); http://dx.doi.org/10.1063/1.1710715 (3 pages) | Cited 23 times

Online Publication Date: 13 April 2004

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The retention characteristics of Ir/IrO2/Pb(Zr0.4Ti0.6)O3(PZT)/Pt/IrO2 capacitors were investigated by measuring the switching and nonswitching polarizations, the switching current profiles, and the P–V hysteresis loops. The retention losses of Ir/IrO2/PZT/Pt/IrO2 capacitors were compared with those of the Pt/PZT/Pt capacitors, and a significant improvement of an opposite-state retention was observed. It was found that the growth and the relaxation behaviors of the internal field are quite similar for both capacitors, but that the polarization backswitching becomes significantly smaller for the PZT capacitors with the IrO2 top electrodes. The difference in polarization backswitching might originate from the nature of the ferroelectric/electrode interfaces, possibly suppressing the nucleation of opposite domains at the interfaces. © 2004 American Institute of Physics.
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84.32.Tt Capacitors
77.80.Dj Domain structure; hysteresis
77.80.Fm Switching phenomena
77.22.Ej Polarization and depolarization

Polarization switching of submicron ferroelectric capacitors using an atomic force microscope

S. Prasertchoung, V. Nagarajan, Z. Ma, R. Ramesh, J. S. Cross, and M. Tsukada

Appl. Phys. Lett. 84, 3130 (2004); http://dx.doi.org/10.1063/1.1707221 (3 pages) | Cited 10 times

Online Publication Date: 13 April 2004

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We report on the measurement of switchable pulse polarization of micron and submicron ferroelectric capacitors contacted using an atomic force microscope. Fast square pulses with rise time on the order of tens of nanoseconds are used to obtain the switchable polarization (ΔP) of discrete polycrystalline Pb(ZrTi)O3 capacitors of 21.5, 0.69, and 0.19 μm2 prepared by sputtering and reactive ion etching. Our studies show that the switching characteristics of these capacitors are well behaved, indicating that high-speed and high-density ferroelectric memory capacitors are not limited by scaling down the capacitor area. © 2004 American Institute of Physics.
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84.32.Tt Capacitors
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
77.80.Fm Switching phenomena
81.65.Cf Surface cleaning, etching, patterning
77.22.Ej Polarization and depolarization

Antiphase-type planar defects in Pb(Mg1/3Nb2/3−δ)O3/SrTiO3 thin films

S. H. Seo, H. C. Kang, D. Y. Noh, Y. Yamada, and K. Wasa

Appl. Phys. Lett. 84, 3133 (2004); http://dx.doi.org/10.1063/1.1710714 (3 pages) | Cited 7 times

Online Publication Date: 13 April 2004

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We fabricated epitaxial Pb(Mg1/3Nb2/3−δ)O3 (PMN) relaxor ferroelectric thin films using radio-frequency magnetron sputtering. The structure of the PMN(001) thin films evolves from tetragonal to pseudocubic as the strain is relieved with increasing the film thickness. In films of intermediate thickness, antiphase type planar defects across which atoms are displaced by 1/2[±1 ±1 0] are identified by synchrotron x-ray scattering. The planar defects appear during the course of the strain relaxation. © 2004 American Institute of Physics.
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77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
81.15.Cd Deposition by sputtering
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.55.A- Nucleation and growth
68.55.-a Thin film structure and morphology
77.80.B- Phase transitions and Curie point
78.70.Ck X-ray scattering
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances

Dielectric nonlinear characteristics of Ba(Zr0.35Ti0.65)O3 thin films grown by a sol-gel process

Jiwei Zhai, Xi Yao, Liangying Zhang, and Bo Shen

Appl. Phys. Lett. 84, 3136 (2004); http://dx.doi.org/10.1063/1.1715152 (3 pages) | Cited 49 times

Online Publication Date: 13 April 2004

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Ba(Zr0.35Ti0.65)O3 (BZT) thin films were deposited via a sol-gel process on Pt-coated silicon substrates. The BZT films were in the perovskite phase and had polycrystalline structure. Temperature-dependent dielectric measurements revealed that the thin films have relaxor behavior and diffuse phase transition characteristics. The tunability K of the dielectric constant (at 600 kV/cm) is about 40% in the temperature range of 179–293 K. The improved temperature stability from this BZT thin film is beneficial to applications requiring a wide range of operating temperatures, thereby eliminating the need for environmental controls. Although the K value is not extraordinarily large compared to (Ba,Sr)TiO3, the low dielectric constant of BZT is attractive for microwave frequency applications. This provides an additional possibility in balancing K and dielectric constant through materials engineering for optimum device performance. © 2004 American Institute of Physics.
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77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ch Permittivity (dielectric function)
77.80.B- Phase transitions and Curie point
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
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