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19 Apr 2004

Volume 84, Issue 16, pp. 2971-3207

Issue Cover Spotlight Figure

Appl. Phys. Lett. 84, 3139 (2004); http://dx.doi.org/10.1063/1.1710717 (3 pages)

Slava V. Rotkin and Karl Hess
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Scattering mechanisms in high-mobility strained Ge channels

B. Rössner, D. Chrastina, G. Isella, and H. von Känel

Appl. Phys. Lett. 84, 3058 (2004); http://dx.doi.org/10.1063/1.1707223 (3 pages) | Cited 34 times

Online Publication Date: 13 April 2004

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We report on the low-temperature mobility in remotely doped p-type strained Ge layers on relaxed Si0.3Ge0.7 virtual substrates, grown by low-energy plasma-enhanced chemical vapor deposition. A maximum mobility of 120 000 cm2 V−1 s−1 has been reached at 2 K, at a carrier sheet density of 8.5×1011 cm−2. Analysis of the mobility and Dingle ratio τ/τq as a function of sheet density suggests that remote impurity scattering is the limiting factor at low sheet densities, but that interface impurities become more important as the sheet density increases. © 2004 American Institute of Physics.
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81.05.Cy Elemental semiconductors
73.61.Cw Elemental semiconductors
61.72.uf Ge and Si
72.20.Dp General theory, scattering mechanisms
68.55.A- Nucleation and growth
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Effect of impurities on the mobility of single crystal pentacene

Oana D. Jurchescu, Jacob Baas, and Thomas T. M. Palstra

Appl. Phys. Lett. 84, 3061 (2004); http://dx.doi.org/10.1063/1.1704874 (3 pages) | Cited 312 times

Online Publication Date: 13 April 2004

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We have obtained a hole mobility for the organic conductor pentacene of μ=35 cm2/V s at room temperature increasing to μ = 58 cm2/V s at 225 K. These high mobilities result from a purification process in which 6,13-pentacenequinone was removed by vacuum sublimation. The number of traps is reduced by two orders of magnitude compared with conventional methods. The temperature dependence of the mobility is consistent with the band model for electronic transport. © 2004 American Institute of Physics.
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81.20.Ym Purification
61.72.S- Impurities in crystals
72.20.Fr Low-field transport and mobility; piezoresistance
72.80.Le Polymers; organic compounds (including organic semiconductors)

Comparison of the electrical activation of P+ and N+ ions co-implanted along with Si+ or C+ ions into 4H-SiC

F. Schmid and G. Pensl

Appl. Phys. Lett. 84, 3064 (2004); http://dx.doi.org/10.1063/1.1707220 (3 pages) | Cited 6 times

Online Publication Date: 13 April 2004

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The annealing behavior of P+ and N+ ions implanted into p-type 4H-SiC epilayers is studied by a temperature-dependent Hall-effect. Detailed investigations reveal that the electrical activation of implanted P+ ions is governed by the site competition effect, while implanted N+ ions react with intrinsic defects during the annealing step and can form thermally stable and electrically inactive complexes. In this way, the electrical activation of implanted N+ ions is strongly reduced. © 2004 American Institute of Physics.
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61.72.uj III-V and II-VI semiconductors
61.72.Cc Kinetics of defect formation and annealing
72.20.My Galvanomagnetic and other magnetotransport effects
71.55.Eq III-V semiconductors

Photoemission study and band alignment of the CuInSe2(001)/CdS heterojunction

T. Schulmeyer, R. Hunger, A. Klein, W. Jaegermann, and S. Niki

Appl. Phys. Lett. 84, 3067 (2004); http://dx.doi.org/10.1063/1.1712034 (3 pages) | Cited 13 times

Online Publication Date: 13 April 2004

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The contact formation of thin-film epitaxial CuInSe2(001) with a physical-vapor-deposited CdS layer is presented in this work. Synchrotron-excited photoelectron spectroscopy was used for this investigation. The epitaxial CuInSe2 films contain a surface layer of reduced Cu stoichiometry similar to the ordered defect compound CuIn3Se5. A valence band offset of 0.79±0.15 eV has been determined for this heterojunction. The comparison to literature data indicates that neither surface orientation nor surface copper content have a major impact on the valence band offset of CuIn3Se5, respectively, CuInSe2 with CdS. © 2004 American Institute of Physics.
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71.20.Nr Semiconductor compounds
79.60.Dp Adsorbed layers and thin films
61.66.Bi Elemental solids
61.66.Dk Alloys
73.20.At Surface states, band structure, electron density of states

Surface band bending in as-grown and plasma-treated n-type GaN films using surface potential electric force microscopy

Sang-Jun Cho, Seydi Doğan, Shahriar Sabuktagin, Michael A. Reshchikov, Daniel K. Johnstone, and Hadis Morkoç

Appl. Phys. Lett. 84, 3070 (2004); http://dx.doi.org/10.1063/1.1703843 (3 pages) | Cited 24 times

Online Publication Date: 13 April 2004

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The surface band bending, as well as the effect of plasma-induced damage on band bending, on GaN surfaces, was investigated. The upward band bending, measured by surface potential electric force microscopy (a variant of atomic force microscopy), for the as-grown n-type GaN was about 1.0 eV which increased to ∼ 1.4 eV after reactive ion etching (RIE). UV illumination decreased the band bending by 0.3 eV with time constants on the order of seconds and hundreds of seconds for the as-grown and RIE treated GaN, respectively. This implies that there is a higher density of the surface states in the samples subjected to the RIE process. After the RIE treatment, the shape of the photoluminescence spectrum remained unchanged, but the intensity dropped by a factor of 3. This effect can be attributed to nonradiative defects created near the surface by the RIE treatment. © 2004 American Institute of Physics.
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78.55.Cr III-V semiconductors
81.65.Cf Surface cleaning, etching, patterning
68.35.B- Structure of clean surfaces (and surface reconstruction)
73.20.At Surface states, band structure, electron density of states
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Electrical isolation, thermal stability and rf loss in a multilayer GaAs planar doped barrier diode structure bombarded by H+ and Fe+ ions

V. T. Vo, K. L. Koon, Z. R. Hu, C. N. Dharmasiri, S. C. Subramaniam, and A. A. Rezazadeh

Appl. Phys. Lett. 84, 3073 (2004); http://dx.doi.org/10.1063/1.1712030 (3 pages) | Cited 1 time

Online Publication Date: 13 April 2004

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Electrical isolation in multilayer GaAs planar doped barrier (PDB) diode structures produced by H+ and Fe+ ion implantation were investigated. For an H+ bombardment with a dose of 1×1015 cm−2, a sheet resistivity as high as 3×108 Ω/sq and thermal stability up to 400 °C has been achieved. For samples bombarded by Fe+ ions, a similar high sheet resistivity has also been achieved although a longer annealing time (15 min) and a higher annealing temperature (550 °C) were needed. The rf dissipation losses of coplanar waveguide (CPW) “thru” lines fabricated on bombarded multilayer PDBD structure samples were also examined. The measured rf losses were 1.65 dB/cm at 10 GHz and 3 dB/cm at 40 GHz, similar to the values that a CPW line exhibits on a semi-isolating GaAs substrate. © 2004 American Institute of Physics.
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68.65.Ac Multilayers
81.05.Ea III-V semiconductors
61.72.uj III-V and II-VI semiconductors
85.30.Kk Junction diodes
61.72.Cc Kinetics of defect formation and annealing
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Transport mechanisms in atomic-layer-deposited Al2O3 dielectrics

M. Specht, M. Städele, S. Jakschik, and U. Schröder

Appl. Phys. Lett. 84, 3076 (2004); http://dx.doi.org/10.1063/1.1703840 (3 pages) | Cited 36 times

Online Publication Date: 13 April 2004

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We analyze the field and temperature dependence of electron currents through atomic-layer-deposited thin (3.6–6 nm) sheets of Al2O3 which were annealed above the crystallization temperature. On the basis of electrical characterization and numerical simulation that includes trap-assisted transport as well as the band bending in the contact regions, we have identified three characteristic field regions in which the currents are dominated by elastic trap-assisted tunneling, Frenkel–Poole hopping, or Fowler–Nordheim tunneling. We find that the Frenkel–Poole traps lie in a narrow band about 1.2 eV below the conduction band minimum of Al2O3, whereas the energetic distribution of the elastic traps is broad and has a tail that reaches far into the band gap. The numerical results are compatible with a Si/Al2O3 conduction band offset of 2.7 eV. © 2004 American Institute of Physics.
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77.55.-g Dielectric thin films
73.50.Fq High-field and nonlinear effects
71.20.Ps Other inorganic compounds
73.40.Gk Tunneling
64.70.K- Solid-solid transitions
81.40.Gh Other heat and thermomechanical treatments

Direct and highly sensitive measurement of defect-related absorption in amorphous silicon thin films by cavity ringdown spectroscopy

I. M. P. Aarts, B. Hoex, A. H. M. Smets, R. Engeln, W. M. M. Kessels, and M. C. M. van de Sanden

Appl. Phys. Lett. 84, 3079 (2004); http://dx.doi.org/10.1063/1.1713047 (3 pages) | Cited 21 times

Online Publication Date: 13 April 2004

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Cavity ringdown spectroscopy has been applied to hydrogenated amorphous silicon (a-Si:H) showing that this fully optical method is suited for the detection of defect-related absorption in thin films with a minimal detectable absorption of 1×10−6 per laser pulse and without the need for a calibration procedure. Absolute absorption coefficient spectra for photon energies between 0.7 and 1.7 eV have been obtained for thin a-Si:H films (4–98 nm) revealing a different spectral dependence for defects located in the bulk and in the surface/interface region of a-Si:H. © 2004 American Institute of Physics.
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78.66.Jg Amorphous semiconductors; glasses
78.66.Db Elemental semiconductors and insulators
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Heteroepitaxial growth of (111) 3C–SiC on well-lattice-matched (110) Si substrates by chemical vapor deposition

Taro Nishiguchi, Mitsuhiro Nakamura, Koji Nishio, Toshiyuki Isshiki, and Shigehiro Nishino

Appl. Phys. Lett. 84, 3082 (2004); http://dx.doi.org/10.1063/1.1719270 (3 pages) | Cited 17 times

Online Publication Date: 13 April 2004

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Heteroepitaxial growth of 3C–SiC on (110) Si substrates by chemical vapor deposition was carried out, and the grown epitaxial layers were investigated by high resolution transmission electron microscopic (HRTEM) analysis. The interface structure between 3C–SiC and Si substrates depended on the flow rate of C3H8 during the carbonization process. In the case of the growth under C3H8 = 0.4 sccm, the interface was flat and 3C–SiC layer was grown epitaxially on (110) Si substrate in a well-lattice-matched relationship of (110) Si//(111) 3C–SiC and [math10] Si//[math10] 3C–SiC. In contrast, the interface was rough under C3H8 = 1.2 sccm and polycrystalline 3C–SiC grew without epitaxial relationship to the substrate. HRTEM observations revealed that an atomically flat (110) Si substrate surface is significant in order to grow high quality 3C–SiC with suppressing the generation of stacking faults. © 2004 American Institute of Physics.
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68.55.A- Nucleation and growth
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.37.Lp Transmission electron microscopy (TEM)
68.55.-a Thin film structure and morphology
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.Nn Stacking faults and other planar or extended defects

Positive temperature coefficient resistance and humidity sensing properties of Cd-doped ZnO nanowires

Q. Wan, Q. H. Li, Y. J. Chen, T. H. Wang, X. L. He, X. G. Gao, and J. P. Li

Appl. Phys. Lett. 84, 3085 (2004); http://dx.doi.org/10.1063/1.1707225 (3 pages) | Cited 63 times

Online Publication Date: 13 April 2004

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Cd-doped ZnO nanowires in mass production were synthesized by evaporating metal zinc (Zn) and cadmium (Cd) at 900 °C. Devices using the synthesized nanowires were fabricated on microstructured substrates. Cd-doped ZnO nanowires show a clear positive temperature coefficient of resistance effect, which is quite abnormal as compared to pure ZnO nanowires. At room temperature, resistance change of more than three orders of magnitude was measured when Cd-doped ZnO nanowire device was exposed to a moisture pulse of 95% relative humidity. © 2004 American Institute of Physics.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
07.07.Vx Hygrometers; hygrometry
73.63.Nm Quantum wires
61.46.-w Structure of nanoscale materials
78.66.Hf II-VI semiconductors
78.55.Et II-VI semiconductors
81.07.Bc Nanocrystalline materials
61.72.uj III-V and II-VI semiconductors
68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices

Anomalous threshold voltage change by 2 MeV electron irradiation at 100 °C in deep submicron metal-oxide-semiconductor field-effect transistors

K. Hayama, H. Ohyama, E. Simoen, J. M. Rafí, A. Mercha, and C. Claeys

Appl. Phys. Lett. 84, 3088 (2004); http://dx.doi.org/10.1063/1.1711170 (3 pages) | Cited 1 time

Online Publication Date: 13 April 2004

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The degradation of the electrical properties of deep submicron metal-oxide-semiconductor field-effect transistors (MOSFETs) by 2 MeV electron irradiation at high temperatures was studied. The irradiation temperatures were 30, 100, 150 and 200 °C, and the fluence was fixed at 1015 e/cm2. For most experimental conditions, the threshold voltage (VT) is observed to reduce in absolute value both for n- and p-MOSFETs. This reduction is most pronounced at 100 °C, as at this irradiation temperature, the radiation-induced density of interface traps is highest. It is proposed that hydrogen neutralization of the dopants in the substrate plays a key role, whereby the hydrogen is released from the gate by the 2 MeV electrons. © 2004 American Institute of Physics.
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85.30.Tv Field effect devices
61.80.Fe Electron and positron radiation effects
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
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