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19 Apr 2004

Volume 84, Issue 16, pp. 2971-3207

Issue Cover Spotlight Figure

Appl. Phys. Lett. 84, 3139 (2004); http://dx.doi.org/10.1063/1.1710717 (3 pages)

Slava V. Rotkin and Karl Hess
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The role of the InGaAs surface in selective area epitaxy of quantum dots by indium segregation

T. S. Yeoh, R. B. Swint, V. C. Elarde, and J. J. Coleman

Appl. Phys. Lett. 84, 3031 (2004); http://dx.doi.org/10.1063/1.1705731 (3 pages) | Cited 3 times

Online Publication Date: 13 April 2004

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The surface of strained InGaAs films for selective regrowth of InAs nanostructures is investigated by atomic force microscopy and Rutherford backscattering. 3.3-nm-thick In0.33Ga0.67As films were annealed at temperatures between 400 and 800 °C. Significant indium desorption was found to occur at temperatures above 550 °C. The optimum parameters are presented for selective growth of InAs quantum dots having densities of 6.6×1010 cm−2 on In0.33Ga0.67As films. © 2004 American Institute of Physics.
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81.07.Ta Quantum dots
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.37.Ps Atomic force microscopy (AFM)
68.35.Dv Composition, segregation; defects and impurities
61.72.Cc Kinetics of defect formation and annealing
81.05.Ea III-V semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.49.Sf Ion scattering from surfaces (charge transfer, sputtering, SIMS)
78.67.Hc Quantum dots
78.55.Cr III-V semiconductors
68.43.Mn Adsorption kinetics
68.55.-a Thin film structure and morphology

Nanothermodynamic analysis of the low-threshold-pressure-synthesized cubic boron nitride in supercritical-fluid systems

Cheng-Xin Wang, Yu-Hua Yang, and Guo-Wei Yang

Appl. Phys. Lett. 84, 3034 (2004); http://dx.doi.org/10.1063/1.1713029 (3 pages) | Cited 6 times

Online Publication Date: 13 April 2004

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A thermodynamic model in nanoscale was developed to elucidate the nucleation of the cubic boron nitrides (c-BN) synthesized in the high-pressure and high-temperature (HPHT) supercritical-fluid systems under the conditions of the low-threshold-pressure (from 2.0±0.1 to 3.0 GPa) and low-temperature (1300–1500 K). Notably, taking the nanosize-induced interior pressure into account, the nucleation of c-BN could be driven to the new stable region from the metastable region in the general accepted equilibrium phase (P,T) diagram of BN proposed by Corrigan and Bundy, upon HPHT supercritical-fluid systems. The threshold pressure of the formation of c-BN was calculated based on our model, and these results are in excellent agreement with the experiment. © 2004 American Institute of Physics.
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81.07.Bc Nanocrystalline materials
81.05.Ea III-V semiconductors
64.60.Q- Nucleation
82.60.Nh Thermodynamics of nucleation

Visible light emission from polymer-based field-effect transistors

Tomo Sakanoue, Eiichi Fujiwara, Ryo Yamada, and Hirokazu Tada

Appl. Phys. Lett. 84, 3037 (2004); http://dx.doi.org/10.1063/1.1710713 (3 pages) | Cited 47 times

Online Publication Date: 13 April 2004

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Field-effect transistors (FETs) based on poly [2-methoxy, 5-(2′-ethyl-hexoxy)-1, 4-phenylenevinylene] (MEH-PPV) were prepared with bottom-contact type interdigital electrodes of Cr/Au and Al/Au on the SiO2/Si substrates. MEH-PPV exhibited a p-type semiconducting behavior and orange light emission was observed when the devices were operated in vacuum. It was found that the luminescence efficiency of the FETs with Al/Au electrodes was higher than that of Cr/Au electrodes. The simultaneous injection of holes and electrons into MEH-PPV occurred efficiently with the application of Al/Au heteroelectrodes. © 2004 American Institute of Physics.
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85.60.Jb Light-emitting devices
85.30.Tv Field effect devices
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Strong elasticoluminescence from monoclinic-structure SrAl2O4

Chao-Nan Xu, Hiroshi Yamada, Xusheng Wang, and Xu-Guang Zheng

Appl. Phys. Lett. 84, 3040 (2004); http://dx.doi.org/10.1063/1.1705716 (3 pages) | Cited 39 times

Online Publication Date: 13 April 2004

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Elastico-deformation luminescence in strontium aluminates was investigated systematically using precisely controlled pure-phase Eu-doped strontium aluminates of SrAl12O19, Sr4Al14O25, SrAl4O7, α-SrAl2O4, β-SrAl2O4, Sr3Al2O6 and their mixed phases. This study revealed that only the α-SrAl2O4 phase produces strong elastico-deformation luminescence; other strontium aluminates show no deformation luminescence. Correlation of deformation luminescence and crystal structure was found. The α-SrAl2O4 has the lowest symmetry, crystallizing in a monoclinic structure. This finding can be applied in designing strong elastico-deformation-luminescent materials. © 2004 American Institute of Physics.
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78.60.Mq Sonoluminescence, triboluminescence
61.66.Fn Inorganic compounds

Electrical characterization of zinc oxide thin films by electrochemical capacitance–voltage profiling

X. Tang, A. Clauzonnier, H. I. Campbell, K. A. Prior, and B. C. Cavenett

Appl. Phys. Lett. 84, 3043 (2004); http://dx.doi.org/10.1063/1.1695442 (3 pages) | Cited 4 times

Online Publication Date: 13 April 2004

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The growth of ZnO by epitaxial techniques is important for the development of new optoelectronic devices. In order to establish control over the growth, it is important to be able to measure dopant profiles through the layers to supplement Hall effect data. A standard method for many semiconductors is by electrochemical capacitance–voltage (C–V) profiling. In this letter, C–V profiles from metal organic chemical vapor deposition grown ZnO thin films are presented. It is shown that carrier density profiles can be obtained routinely and reproducibly by using 0.1 M ZnCl2. © 2004 American Institute of Physics.
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73.61.Ga II-VI semiconductors
81.65.Cf Surface cleaning, etching, patterning
81.05.Dz II-VI semiconductors

Time-resolved photoluminescence of InAs quantum dots in a GaAs quantum well

F. Pulizzi, A. J. Kent, A. Patanè, L. Eaves, and M. Henini

Appl. Phys. Lett. 84, 3046 (2004); http://dx.doi.org/10.1063/1.1713052 (3 pages) | Cited 10 times

Online Publication Date: 13 April 2004

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We study the time-resolved photoluminescence emission of InAs self-assembled quantum dots (QDs) incorporated in a GaAs/(AlGa)As quantum well. We show that the quantum well confinement affects the decay time of the dot photoluminescence. In addition, we use the strong dependence of the decay time on excitation energy and temperature to shed light on carrier relaxation mechanisms in QDs. © 2004 American Institute of Physics.
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73.21.La Quantum dots
78.67.Hc Quantum dots
78.55.Cr III-V semiconductors
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
78.47.-p Spectroscopy of solid state dynamics

Determination of the ionization energy of nitrogen acceptors in zinc oxide using photoluminescence spectroscopy

Lijun Wang and N. C. Giles

Appl. Phys. Lett. 84, 3049 (2004); http://dx.doi.org/10.1063/1.1711162 (3 pages) | Cited 34 times

Online Publication Date: 13 April 2004

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Photoluminescence spectroscopy of nitrogen-related emissions in ZnO is used to establish the ionization energy of the substitutional nitrogen acceptor. The temperature dependence of the nitrogen-related electron-acceptor (e,A0) emission band has been monitored in as-grown single crystals of ZnO. Line shape analysis of this band is used to determine the acceptor ionization energy. The temperature dependence of the band gap for ZnO was included in our analysis and the low-temperature acceptor ionization energy for substitutional nitrogen at an oxygen site in ZnO was found to be EA = 209±3 meV. Our line shape analysis indicates a small temperature-dependent decrease in EA for T>5 K. © 2004 American Institute of Physics.
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81.05.Dz II-VI semiconductors
71.55.Gs II-VI semiconductors
78.55.Et II-VI semiconductors
81.10.Bk Growth from vapor
71.20.Nr Semiconductor compounds

Femtosecond studies of electron capture times in InGaN/GaN multiple quantum wells

W. H. Fan, S. M. Olaizola, J.-P. R. Wells, A. M. Fox, T. Wang, P. J. Parbrook, D. J. Mowbray, and M. S. Skolnick

Appl. Phys. Lett. 84, 3052 (2004); http://dx.doi.org/10.1063/1.1707226 (3 pages) | Cited 3 times

Online Publication Date: 13 April 2004

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Subpicosecond time-resolved differential transmission spectroscopy has been used to investigate the carrier density and temperature dependence of the quantum well electron capture time of blue-emitting InGaN/GaN multiple quantum well structures. It is found that the capture time varies significantly with both temperature and carrier density, the latter effect being consistent with carrier-induced band bending or increased carrier–carrier scattering. At room temperature, the electron capture time is in the range 0.4–0.8 ps for carrier densities ⩽ 5×1018 cm−3. © 2004 American Institute of Physics.
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78.47.-p Spectroscopy of solid state dynamics
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
78.67.De Quantum wells
73.21.Fg Quantum wells
73.21.Cd Superlattices

Fracture toughness from submicron derived indentation cracks

T. Scholz, G. A. Schneider, J. Muñoz-Saldaña, and M. V. Swain

Appl. Phys. Lett. 84, 3055 (2004); http://dx.doi.org/10.1063/1.1711164 (3 pages) | Cited 28 times

Online Publication Date: 13 April 2004

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Indentation tests with loads between 0.5 and 10 mN were performed on fused quartz, (0001) oriented sapphire and (001) oriented barium titanate. The resulting submicron cracks were used to determine the fracture toughness KIC of the tested samples. The indentation crack length method was applicable, but a c/a dependency of the constant of proportionality was found. In addition, a very effective and simple approach—using the extra penetration of the indenter, due to the formation of cracks, so called pop-in—was used to determine KIC. © 2004 American Institute of Physics.
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81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
62.20.M- Structural failure of materials
68.35.Gy Mechanical properties; surface strains
81.70.Bt Mechanical testing, impact tests, static and dynamic loads
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