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26 Apr 2004

Volume 84, Issue 17, pp. 3223-3417

Issue Cover Spotlight Figure

Appl. Phys. Lett. 84, 3397 (2004); http://dx.doi.org/10.1063/1.1723685 (3 pages)

M. Dürr, A. Bamedi, A. Yasuda, and G. Nelles
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Stimulated emission and time-resolved photoluminescence in rf-sputtered ZnO thin films

Ü. Özgür, A. Teke, C. Liu, S.-J. Cho, H. Morkoç, and H. O. Everitt

Appl. Phys. Lett. 84, 3223 (2004); http://dx.doi.org/10.1063/1.1713034 (3 pages) | Cited 46 times

Online Publication Date: 20 April 2004

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Stimulated emission (SE) was measured from ZnO thin films grown on c-plane sapphire by rf sputtering. Free exciton transitions were clearly observed at 10 K in the photoluminescence (PL), transmission, and reflection spectra of the sample annealed at 950 °C. SE resulting from both exciton-exciton scattering and electron hole plasma formation was observed in the annealed samples at moderate excitation energy densities. The SE threshold energy density decreased with increasing annealing temperature up to ∼ 950 °C. The observation of low threshold exciton-exciton scattering-induced SE showed that excitonic laser action could be obtained in rf-sputtered ZnO thin films. At excitation densities below the SE threshold, time-resolved PL revealed very fast recombination times of ∼ 74 ps at room temperature, and no significant change at 85 K. The decay time for the SE-induced PL was below the system resolution of <45 ps.© 2004 American Institute of Physics.
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81.05.Dz II-VI semiconductors
78.66.Hf II-VI semiconductors
78.55.Et II-VI semiconductors
78.45.+h Stimulated emission
71.35.-y Excitons and related phenomena
68.55.A- Nucleation and growth
81.15.Cd Deposition by sputtering
61.72.Cc Kinetics of defect formation and annealing
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Plasmon-enhancement of optical near-field of metal nanoaperture surface-emitting laser

Jiro Hashizume and Fumio Koyama

Appl. Phys. Lett. 84, 3226 (2004); http://dx.doi.org/10.1063/1.1723691 (3 pages) | Cited 17 times

Online Publication Date: 20 April 2004

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We propose a double-aperture structure to enhance the optical near-field in metal nanoaperture vertical-cavity surface-emitting lasers (VCSELs). We fabricated 850 nm GaAs VCSELs with subwavelength-sized double metal apertures closed to each other. The optical near-field localized in the metal apertures is strongly enhanced by the excitation of localized plasmon around the metal apertures. The far-field power radiated from the apertures is enhanced to be 16 times larger than that from a single aperture VCSEL. The peak power density is as large as 2.5 mW/μm2 with a spot size of 260 nm. The obtained power density is even larger than that of a conventional single-mode VCSEL without nanoapertures, which is very encouraging for use in high-density data storages. © 2004 American Institute of Physics.
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81.05.Ea III-V semiconductors
42.60.By Design of specific laser systems
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
42.55.Px Semiconductor lasers; laser diodes

Double-biprism electron interferometry

Ken Harada, Akira Tonomura, Yoshihiko Togawa, Tetsuya Akashi, and Tsuyoshi Matsuda

Appl. Phys. Lett. 84, 3229 (2004); http://dx.doi.org/10.1063/1.1715155 (3 pages) | Cited 14 times

Online Publication Date: 20 April 2004

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Electron holography based on two electron biprisms was developed. The upper biprism was installed just on the image plane of the objective lens, and the lower one was set between the crossover point and image plane of the magnifying lens. This system was able to control two important parameters of the hologram—fringe space and width of interference region—independently. The system enabled us to perform electron holography and interferometry more flexibly. We confirmed the good performance of the system and did preliminary applications using a 1-MV field-emission electron microscope. © 2004 American Institute of Physics.
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42.40.Eq Holographic optical elements; holographic gratings
42.40.Kw Holographic interferometry; other holographic techniques
68.37.Vj Field emission and field-ion microscopy
42.79.Bh Lenses, prisms and mirrors

Performance of a negative index of refraction lens

C. G. Parazzoli, R. B. Greegor, J. A. Nielsen, M. A. Thompson, K. Li, A. M. Vetter, M. H. Tanielian, and D. C. Vier

Appl. Phys. Lett. 84, 3232 (2004); http://dx.doi.org/10.1063/1.1728304 (3 pages) | Cited 57 times

Online Publication Date: 20 April 2004

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A plano-concave lens with negative index of refraction has been designed and fabricated. Such lenses have been postulated for many years, but only recently has their realization been made possible through improved simulation and fabrication procedures. We report here the simulation, fabrication, and performance of such a lens. The lens images the source field and reproduces the results of standard Gaussian optics. The curved lens with negative index of refraction in the microwave frequency region of the electromagnetic spectrum has been compared to a plano-convex Macor positive index of refraction lens having the same radius of curvature. © 2004 American Institute of Physics.
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42.79.Bh Lenses, prisms and mirrors
42.15.Eq Optical system design
42.86.+b Optical workshop techniques

InAs/InP quantum-dot pillar microcavities using SiO2/Ta2O5 Bragg reflectors with emission around 1.55 μm

Dan Dalacu, Daniel Poitras, Jacques Lefebvre, Philip J. Poole, Geof C. Aers, and Robin L. Williams

Appl. Phys. Lett. 84, 3235 (2004); http://dx.doi.org/10.1063/1.1728318 (3 pages) | Cited 9 times

Online Publication Date: 20 April 2004

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We present optical characterization measurements from three-dimensional pillar microcavities comprising an InP spacer layer sandwiched between two SiO2/Ta2O5 Bragg reflectors. InAs quantum dots placed at the center of the InP spacer are used as broadband emitters. Emission into the lowest-order mode is observed at an energy of 820 meV in the wide-pillar limit, with shifts of approximately 30 meV in the ground state and more than 80 meV in higher-order modes for pillars of 2 μm diameter. Excellent agreement is found between the experimentally observed cavity mode energies as a function of pillar diameter and the predictions of guided-mode theory. Cavity quality factors in excess of 2200 are obtained for large diameter pillars, with a decrease to approximately 500 for pillars of 2 μm diameter. © 2004 American Institute of Physics.
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78.67.Hc Quantum dots
78.55.Cr III-V semiconductors
42.79.Bh Lenses, prisms and mirrors
68.65.Hb Quantum dots (patterned in quantum wells)

Current-controlled group delay using a semiconductor Fabry–Perot amplifier

Serge Minin, Matthew Robert Fisher, and Shun Lien Chuang

Appl. Phys. Lett. 84, 3238 (2004); http://dx.doi.org/10.1063/1.1715144 (3 pages) | Cited 12 times

Online Publication Date: 20 April 2004

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We present a demonstration of a current-controlled group delay using a semiconductor waveguide Fabry–Perot optical amplifier operated in reflection. Current injection allows us to tune the resonant wavelength as well as provide the gain required for all-pass reflection, which leads to group delay tunability with relatively small power variation. We show very good agreement between our experimental data and theoretical results, which are analogous to waveguide-coupled active ring resonators. © 2004 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Random laser action in ZnO nanorod arrays embedded in ZnO epilayers

S. F. Yu, Clement Yuen, S. P. Lau, W. I. Park, and Gyu-Chul Yi

Appl. Phys. Lett. 84, 3241 (2004); http://dx.doi.org/10.1063/1.1734681 (3 pages) | Cited 84 times

Online Publication Date: 20 April 2004

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Random laser action with coherent feedback has been observed in ZnO nanorod arrays embedded in ZnO epilayers. The sample was fabricated by depositing a MgO buffer layer and followed by a layer of ZnO thin film onto a vertically well-aligned ZnO nanorod arrays grown on sapphire substrate. Under 355 nm optical excitation at room temperature, sharp lasing peaks emit at around 390 nm with a linewidth less than 0.4 nm has been observed in all directions. In addition, the dependence of the lasing threshold intensity on the excitation area is shown in good agreement with the random laser theory. Hence, it is demonstrated that random laser action can also be supported in ZnO nanorod arrays. © 2004 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
81.07.Bc Nanocrystalline materials

Zinc oxide thin-film random lasers on silicon substrate

S. F. Yu, Clement Yuen, S. P. Lau, and H. W. Lee

Appl. Phys. Lett. 84, 3244 (2004); http://dx.doi.org/10.1063/1.1719279 (3 pages) | Cited 59 times

Online Publication Date: 20 April 2004

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Room-temperature ultraviolet lasing is demonstrated in mirrorless zinc oxide thin-film waveguides on (100) silicon substrate. Laser cavities, due to closed-loop optical scattering from the lateral facets of the irregular zinc oxide grains, are generated through the post-growth annealing of high-crystal-quality zinc oxide thin films obtained from the filtered cathodic vacuum arc technique. It is found that the lasing wavelength and linewidth of the zinc oxide random lasers under 355 nm optical excitation are around 390 nm and less than 0.4 nm, respectively. In addition, the lasing threshold characteristics are in good agreement with the random laser theory. © 2004 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
61.72.Cc Kinetics of defect formation and annealing

Nonlinear optical input–output characteristics of 1.55 μm injection-locked vertical-cavity surface-emitting lasers

Y. Onishi, F. Koyama, N. Nishiyama, C. Caneau, and C. E. Zah

Appl. Phys. Lett. 84, 3247 (2004); http://dx.doi.org/10.1063/1.1728321 (3 pages) | Cited 5 times

Online Publication Date: 20 April 2004

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The optical input–output characteristics of a 1.55 μm vertical-cavity surface-emitting laser (VCSEL) with external light injection to its fundamental mode were investigated. Appropriate wavelength detuning of external light enables abrupt modal switching in an injection-locked VCSEL. We found that the obtained nonlinear transfer function is strongly dependent on the distance between a VCSEL and an input lensed fiber. As the distance was changed, different optical input–output characteristics were observed, demonstrating that such a VCSEL can be employed in various optical signal-processing schemes, for example as an optical regenerator or an optical inverter. © 2004 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.65.-k Nonlinear optics

Wavelength tunability of second-harmonic generation from two-dimensional χ(2) nonlinear photonic crystals with a tetragonal lattice structure

L.-H. Peng, C.-C. Hsu, Jimmy Ng, and A. H. Kung

Appl. Phys. Lett. 84, 3250 (2004); http://dx.doi.org/10.1063/1.1728303 (3 pages) | Cited 14 times

Online Publication Date: 20 April 2004

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The wavelength tunability of second-harmonic generation (SHG) in a two-dimensional nonlinear photonic crystal (2D NPC) on lithium niobate is examined by using a 1.55 μm-band optical parametric oscillator. We observed SHG signals that were generated off-axis from the fundamental pump beam and a multiple number of quasi-phase-matchable (QPM) wavelengths for a given crystal setting. The spacing between the phase-matched wavelengths increases with the azimuthal rotation angle (ϕ) in the x–y plane of the crystal. The peak intensity and propagation direction of the SHG signals are found to vary with the pump wavelength and crystal rotation angle. These observations are ascribed to a 2D distribution of high-order reciprocal lattice vectors Gmn(ϕ) and the corresponding χ(2)(Gmn) nonlinearities in 2D NPC having a tetragonal structural symmetry. © 2004 American Institute of Physics.
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77.84.-s Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.Qs Photonic bandgap materials

Displacement measurement in real time using the attenuated total reflection technique

Jian Shi, Zhuangqi Cao, Jun Zhu, and Qishun Shen

Appl. Phys. Lett. 84, 3253 (2004); http://dx.doi.org/10.1063/1.1715146 (3 pages) | Cited 4 times

Online Publication Date: 20 April 2004

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A simple displacement measurement based on the attenuated total reflection technique is proposed and experimentally demonstrated. By analyzing the fringe shift of the reflective pattern recorded on a CCD camera, a slight displacement, which corresponds to a change in the waveguide thickness, can be determined in real time with adequate accuracy. The measurement range of this method is about 240 μm, and its accuracy can reach 0.05 μm. © 2004 American Institute of Physics.
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06.30.Bp Spatial dimensions (e.g., position, lengths, volume, angles, and displacements)
42.62.Eh Metrological applications; optical frequency synthesizers for precision spectroscopy
07.60.-j Optical instruments and equipment

Delta doping superlattice structures for amplitude modulators: Observation of the Stark effect and improvement of the chirp

C. V.-B. Tribuzy, M. P. Pires, S. M. Landi, M. Borgström, and P. L. Souza

Appl. Phys. Lett. 84, 3256 (2004); http://dx.doi.org/10.1063/1.1715149 (3 pages) | Cited 1 time

Online Publication Date: 20 April 2004

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A Stark shift for a GaAs/AlGaAs multiple quantum well structure containing a nipi delta-doping superlattice is observed. Photocurrent measurements revealed a Stark shift that varied with increasing applied electric field, from being equivalent to that of an undoped structure to 30% below. Even though these values are still below those predicted theoretically, they demonstrate the possibility of fabricating amplitude modulators using these novel structures. Furthermore, the obtained chirp parameter is within the desired [−1,0] range for long-distance optical communication, contrary to the high positive values for the undoped structure, showing that such device may have a better overall performance. © 2004 American Institute of Physics.
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68.65.Fg Quantum wells
68.47.Fg Semiconductor surfaces
78.66.Fd III-V semiconductors
42.79.Hp Optical processors, correlators, and modulators
79.60.Jv Interfaces; heterostructures; nanostructures
72.40.+w Photoconduction and photovoltaic effects

Photosensitive properties of a tin-doped sodium silicate glass for direct ultraviolet writing

Daniel Milanese, Monica Ferraris, Yvonne Menke, Massimo Olivero, Guido Perrone, Corin B. E. Gawith, Gilberto Brambilla, Peter G. R. Smith, and Elizabeth R. Taylor

Appl. Phys. Lett. 84, 3259 (2004); http://dx.doi.org/10.1063/1.1715148 (3 pages) | Cited 4 times

Online Publication Date: 20 April 2004

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In this letter, the fabrication of channel waveguides by direct UV writing into a bulk tin-doped multicomponent silicate glass is presented. Different laser powers and scan rates were employed and optimized to avoid surface ablation. The best results were obtained at a laser power of 95 mW and at a scan speed of 10 mm/min, where a refractive index change of 1.5×10−3 was estimated and an attenuation loss of 3.3 dB/cm was measured using the cutback method. A morphological investigation of the glass end facets was performed in order to assess the surface effect of the laser exposure. © 2004 American Institute of Physics.
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42.79.Gn Optical waveguides and couplers
42.70.Ce Glasses, quartz
52.38.Mf Laser ablation
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
79.20.Ds Laser-beam impact phenomena
81.65.-b Surface treatments
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Low-threshold polymeric distributed feedback lasers with metallic contacts

M. Reufer, S. Riechel, J. M. Lupton, J. Feldmann, U. Lemmer, D. Schneider, T. Benstem, T. Dobbertin, W. Kowalsky, A. Gombert, K. Forberich, V. Wittwer, and U. Scherf

Appl. Phys. Lett. 84, 3262 (2004); http://dx.doi.org/10.1063/1.1712029 (3 pages) | Cited 34 times

Online Publication Date: 20 April 2004

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Optical losses in waveguides comprising metallic contacts are thought to be a major hurdle to the realization of organic laser diodes. We demonstrate here that careful tuning of the waveguide mode in flexible distributed feedback lasers can allow lasing action to occur in organic thin films in the presence of contacting electrodes with virtually no difference when compared to metal free devices. A metallic electrode is most suited as the bottom contact between the polymer and the substrate as it reduces mode leakage into the substrate and enhances modal gain. In contrast, a thin transparent electrode such as a metal oxide is preferable for the top electrode, where confinement is not a problem. © 2004 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.79.Gn Optical waveguides and couplers

Semiconductor coupled-resonator optical waveguide laser

Shayan Mookherjea

Appl. Phys. Lett. 84, 3265 (2004); http://dx.doi.org/10.1063/1.1719278 (3 pages) | Cited 8 times

Online Publication Date: 20 April 2004

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The coupled-resonator optical waveguide (CROW) has been introduced recently as a single-mode waveguiding structure in which the group velocity of light is controllable, and nonlinear interactions between waves can be enhanced by orders of magnitude. A semiclassical description of lasing in CROWs is presented for typical semiconductor media such as GaAs. The threshold conditions for steady-state lasing are presented and evaluated numerically. The lasing threshold can be lowered by reducing the group velocity, thus the CROW laser is an alternative to photonic crystal lasers for realizing lower threshold lasers. Furthermore, the laser wavelength can be tuned with a fine resolution by changing the coupling between the constituent resonators. © 2004 American Institute of Physics.
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42.55.Ah General laser theory
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes

Continuous-wave emission from midinfrared IV–VI vertical-cavity surface-emitting lasers

J. Fürst, H. Pascher, T. Schwarzl, M. Böberl, G. Springholz, G. Bauer, and W. Heiss

Appl. Phys. Lett. 84, 3268 (2004); http://dx.doi.org/10.1063/1.1719277 (3 pages) | Cited 8 times

Online Publication Date: 20 April 2004

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Continuous-wave emission of two midinfrared PbSe vertical-cavity surface-emitting laser structures is presented. For both structures, optically pumped cw laser emission is observed at a wavelength of about 7.9 μm. Stimulated emission is found up to temperatures of 80 K. We achieved internal threshold pump intensities of down to 25 W/cm2, which is two orders of magnitude smaller than reported so far. The linewidth of the laser emission is only 18 μeV (0.9 nm) with a strong narrowing as compared to the linewidth of the cavity resonance. Continuous-wave output powers are up to 350 μW. © 2004 American Institute of Physics.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
78.45.+h Stimulated emission

Continuous-wave laser operation at 1.3 μm in Nd3+-doped Zn:LiNbO3 channel waveguides

M. Domenech and G. Lifante

Appl. Phys. Lett. 84, 3271 (2004); http://dx.doi.org/10.1063/1.1719271 (3 pages) | Cited 7 times

Online Publication Date: 20 April 2004

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This work reports continuous laser action around 1.3 μm at room temperature in LiNbO3:Nd3+ channel waveguides, fabricated by the two-steps Zn diffusion technique. A threshold of 64 mW and a slope efficiency of around 0.5% were obtained in an 8 μm wide channel guide. These results have been compared with laser oscillation around 1.08 μm in LiNbO3:Nd3+ waveguides in terms of the launched pump powers, taking into account the emission cross section values of the 4F3/2→4I13/2 and 4F3/2→4I11/2 transitions. © 2004 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
42.55.Rz Doped-insulator lasers and other solid state lasers
66.30.H- Self-diffusion and ionic conduction in nonmetals
78.30.Hv Other nonmetallic inorganics

Optical cavity enhancement of light–sound interaction in acoustic phonon cavities

P. Lacharmoise, A. Fainstein, B. Jusserand, and V. Thierry-Mieg

Appl. Phys. Lett. 84, 3274 (2004); http://dx.doi.org/10.1063/1.1734686 (3 pages) | Cited 38 times

Online Publication Date: 20 April 2004

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We describe a device that has a resonant cavity for acoustic phonons embedded inside an optical cavity. This double cavity structure is a resonator for acoustical phonons and enhances the interaction between sound and light. We discuss the design and material parameters relevant for the optimization of the acoustic phonon cavities, and we present Raman scattering experiments on GaAs/AlAs structures designed to confine from one to three acoustical phonon modes. We quantitatively study the amplification of the photon–phonon interaction in these devices reporting an enhancement factor of more than five orders of magnitude. © 2004 American Institute of Physics.
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63.20.K- Phonon interactions
78.30.Fs III-V and II-VI semiconductors
78.66.Fd III-V semiconductors
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects

High detectivity InAs quantum dot infrared photodetectors

Eui-Tae Kim, Anupam Madhukar, Zhengmao Ye, and Joe C. Campbell

Appl. Phys. Lett. 84, 3277 (2004); http://dx.doi.org/10.1063/1.1719259 (3 pages) | Cited 89 times

Online Publication Date: 20 April 2004

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We report a high detectivity of 3×1011 cm Hz1/2/W at 78 K for normal-incidence quantum dot infrared photodetectors with ten layers of undoped InAs/InGaAs/GaAs quantum dot active regions. The high detectivity seen at 1.4 V corresponds to photoresponse peaks at 9.3 and 8.7 μm for positive and negative bias, respectively. © 2004 American Institute of Physics.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
73.63.Kv Quantum dots
73.50.Pz Photoconduction and photovoltaic effects

Optical gain in porous silicon grains embedded in sol-gel derived SiO2 matrix under femtosecond excitation

K. Luterová, K. Dohnalová, V. Švrček, I. Pelant, J.-P. Likforman, O. Crégut, P. Gilliot, and B. Hönerlage

Appl. Phys. Lett. 84, 3280 (2004); http://dx.doi.org/10.1063/1.1723692 (3 pages) | Cited 36 times

Online Publication Date: 20 April 2004

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Porous silicon grains embedded in the phosphorus doped SiO2 matrix exhibit improved photoluminesce properties and better stability in comparison with native porous silicon samples. We have tested this material for the presence of room temperature optical amplification under femtosecond (100 fs, 395 nm) excitation. Combined variable stripe length and shifted excitation spot experiments reveal positive optical gain, the net modal gain coefficient reaching 25 cm−1 at a pump intensity of 1.1 W/cm2 (mean power). The gain spectrum is broad (full width at half maximum ∼130 nm), peaked at ∼650 nm, and is slightly blueshifted with regard to the standard photoluminescence emission. © 2004 American Institute of Physics.
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78.55.Ap Elemental semiconductors
78.66.Db Elemental semiconductors and insulators
61.72.S- Impurities in crystals
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Ion energy distribution change at the transition of power-coupling modes in an immersed-coil-type inductively coupled Ar discharge

Dae-Hwan Kang, Dong-Kak Lee, Ki-Bum Kim, Jung-Joong Lee, and Junghoon Joo

Appl. Phys. Lett. 84, 3283 (2004); http://dx.doi.org/10.1063/1.1715140 (3 pages) | Cited 5 times

Online Publication Date: 20 April 2004

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The power-coupling mode was changed from a capacitively coupled (E-mode) to an inductively coupled (H-mode) with an increase of rf input power in an immersed-coil-type inductively coupled Ar discharge at 1 mTorr. It was identified that the bimodal-shaped ion energy distribution (IED) of the capacitively coupled discharge was dominant below 100 W (E-mode), while the single peak due to the inductively coupled discharge became dominant above 250 W (H-mode). In addition, it was possible to quantitatively determine the relative amounts of capacitively and inductively coupled components at both modes, making the analysis of IED one of most effective methods to investigate the power-coupling mode transition in an inductively coupled plasma system. © 2004 American Institute of Physics.
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52.70.Ds Electric and magnetic measurements
52.50.Dg Plasma sources
52.80.Pi High-frequency and RF discharges
52.25.-b Plasma properties
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Narrow fluence window and giant isotope effect in low-energy hydrogen ion blistering of silicon

O. Moutanabbir, A. Giguère, and B. Terreault

Appl. Phys. Lett. 84, 3286 (2004); http://dx.doi.org/10.1063/1.1723699 (3 pages) | Cited 18 times

Online Publication Date: 20 April 2004

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We have found that blisters due to low-keV H-ion implantation and annealing of Si appear at low fluence (e.g., 2×1016 H cm−2) but disappear at slightly higher fluence (3.5×1016 H cm−2); this fluence “window” widens at higher ion energy. For D-ion blistering the window is shifted upwards by a surprising factor of 2–3. Thermal desorption spectrometry suggests that D is somehow more stable than H in Si. Hypotheses to explain blistering disappearance and the giant isotope effect are discussed. This phenomenon has an impact for the ion-cut process at the sub 100 nm scale. © 2004 American Institute of Physics.
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61.72.uf Ge and Si
61.72.Cc Kinetics of defect formation and annealing
82.20.Tr Kinetic isotope effects including muonium
68.43.Vx Thermal desorption
68.37.Ps Atomic force microscopy (AFM)

Correlated structural and optical characterization of ammonothermally grown bulk GaN

J. Bai, M. Dudley, B. Raghothamachar, P. Gouma, B. J. Skromme, L. Chen, P. J. Hartlieb, E. Michaels, and J. W. Kolis

Appl. Phys. Lett. 84, 3289 (2004); http://dx.doi.org/10.1063/1.1715154 (3 pages) | Cited 2 times

Online Publication Date: 20 April 2004

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A series of ammonothermally grown bulk GaN crystals containing stacking faults has been characterized using structural [transmission electron microscopy (TEM) and synchrotron white-beam x-ray topography (SWBXT)] and optical [low-temperature photoluminescence (PL)] methods. Strong correlations are found between structural and optical properties. In particular, the occurrence of low-temperature PL peaks observed in the 3.30–3.45 eV range correlates with the observation of basal plane stacking faults by TEM (all of which were bounded by Shockley partial dislocations). In addition, the full width at half-maximum of the neutral donor-bound exciton PL peak correlates with the extent of mosaicity revealed on SWBXT Laue patterns recorded from the same crystals. © 2004 American Institute of Physics.
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78.55.Cr III-V semiconductors
61.72.Nn Stacking faults and other planar or extended defects
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
68.37.Lp Transmission electron microscopy (TEM)

Full silicidation process for making CoSi2 on SiO2

Q. T. Zhao, E. Rije, St. Lenk, H. Bay, and S. Mantl

Appl. Phys. Lett. 84, 3292 (2004); http://dx.doi.org/10.1063/1.1728299 (3 pages) | Cited 3 times

Online Publication Date: 20 April 2004

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A silicidation process was developed to produce high-quality CoSi2 directly on SiO2, which can be used for metal gates of metal–oxide-semiconductor field-effect transistors (MOSFETs). Normally, the formation of a CoSi2 layer on SiO2 is very difficult because of the requirement for an exact Co/Si thickness ratio. In our process, an additional Si layer was deposited after the first rapid thermal processing (RTP) at 500 °C and selective etching of the unreacted Co. The additional Si layer provided a Si supply for the second RTP at a higher temperature. This method allows the Co layer thickness to be varied over a fairly large range, and in addition, the microstructure of the silicide layer and the CoSi2/SiO2 interface were substantially improved. © 2004 American Institute of Physics.
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81.65.Mq Oxidation
68.35.Ct Interface structure and roughness
85.30.Tv Field effect devices

Grazing incidence x-ray diffraction and atomic force microscopy investigations of germanium dots grown on silicon (001) by successive depositions of germanium through a thin silicon oxide layer

M. Derivaz, P. Noé, R. Dianoux, A. Barski, A. Coati, Y. Garreau, and C. Alandi

Appl. Phys. Lett. 84, 3295 (2004); http://dx.doi.org/10.1063/1.1715150 (3 pages) | Cited 1 time

Online Publication Date: 20 April 2004

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Structural properties of high density, nanometric size germanium dots grown on a silicon (001) surface covered by a very thin (1.2 nm thick) silicon oxide layer have been investigated by in-situ grazing incidence x-ray diffraction (GIXD) and ex-situ atomic force microscopy. Growth under molecular nitrogen partial pressure of 10−5 Torr yielded a high density ( ∼ 4×1010/cm2) of dots. The dot size can be progressively increased by successive depositions of germanium. GIXD investigations show that dots grow in epitaxial relationship to the silicon (001) substrate and that after few successive depositions, the dots are composed of pure and fully relaxed germanium. © 2004 American Institute of Physics.
Show PACS
68.65.Hb Quantum dots (patterned in quantum wells)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
61.46.-w Structure of nanoscale materials
82.37.Gk STM and AFM manipulations of a single molecule
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