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26 Apr 2004

Volume 84, Issue 17, pp. 3223-3417

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Appl. Phys. Lett. 84, 3397 (2004); http://dx.doi.org/10.1063/1.1723685 (3 pages)

M. Dürr, A. Bamedi, A. Yasuda, and G. Nelles
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Domain structure in a micron-sized PbZr1−xTixO3 single crystal on a Ti substrate fabricated by hydrothermal synthesis

D. J. You, W. W. Jung, S. K. Choi, and Yasuo Cho

Appl. Phys. Lett. 84, 3346 (2004); http://dx.doi.org/10.1063/1.1702129 (3 pages) | Cited 19 times

Online Publication Date: 20 April 2004

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Hydrothermal synthesis is an attractive method for the deposition of ferroelectric thin films because it can realize a low processing temperature of 200 °C or less. In this study, micron-sized PbZr1−xTixO3 (PZT) single crystals and thin films were fabricated on a Ti substrate at 160 °C by hydrothermal synthesis. The ferroelectricity of the crystals was investigated using local piezoresponse hysteresis, while their domain structure was investigated using high-resolution transmission electron microscopy (HRTEM) measurement. The isolated PZT single crystal exhibited hysteresis behavior of the piezoresponse, which represents ferroelectricity. From the HRTEM observations of a crystallite in polycrystalline PZT thin film, we found a twinned domain structure in the form of a … c/a/c/a … polydomain pattern. On the basis of the HRTEM observations, we proposed a three-dimensional domain structure for the isolated PZT single crystal; the c/a domain walls form along coherent {101} planes in the tetragonal cell. This structure was experimentally verified by scanning nonlinear dielectric microscopy. © 2004 American Institute of Physics.
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77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Dj Domain structure; hysteresis
81.10.Dn Growth from solutions
68.55.A- Nucleation and growth
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
68.37.Lp Transmission electron microscopy (TEM)
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)

High electrostriction and relaxor ferroelectric behavior in proton-irradiated poly(vinylidene fluoride-trifluoroethylene) copolymer

Shishang Guo, Xing-Zhong Zhao, Qifa Zhou, Helen L. W. Chan, and C. L. Choy

Appl. Phys. Lett. 84, 3349 (2004); http://dx.doi.org/10.1063/1.1715151 (3 pages) | Cited 6 times

Online Publication Date: 20 April 2004

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Effect of proton irradiation on poly(vinylidene fluoride-trifluoroethylene) 56/44 mol % copolymer has been studied using a Mach–Zehnder heterodyne interferometer, polarization hysteresis loop and dielectric constant measurements. The electrical-field-induced strain response of the copolymer after proton bombardment follows a quadratic electrostriction relationship. The electrostrictive coefficient at 5 kHz is similar to that obtained with a bimorph-based strain sensor, but at a much lower electric field. The polarization hysteresis after proton irradiation is reduced considerably and the dielectric constant exhibits typical relaxor behavior, which is suggested as the cause of the observed results. © 2004 American Institute of Physics.
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77.84.Jd Polymers; organic compounds
77.65.Bn Piezoelectric and electrostrictive constants
61.80.Jh Ion radiation effects
61.82.Pv Polymers, organic compounds
77.22.Ej Polarization and depolarization
77.80.Dj Domain structure; hysteresis
77.22.Ch Permittivity (dielectric function)

Temperature-dependent fatigue behaviors of ferroelectric ABO3-type and layered perovskite oxide thin films

G. L. Yuan, J.-M. Liu, Y. P. Wang, D. Wu, S. T. Zhang, Q. Y. Shao, and Z. G. Liu

Appl. Phys. Lett. 84, 3352 (2004); http://dx.doi.org/10.1063/1.1734685 (3 pages) | Cited 20 times

Online Publication Date: 20 April 2004

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The temperature-dependent dielectric and ferroelectric fatigue behaviors of ABO3-type perovskite thin films Pb(Zr0.52Ti0.48)O3 (PZT) and Pb0.75La0.25TiO3 (PLT) and layered Aurivillius thin films SrBi2Ta2O9 (SBT) and Bi3.25La0.75Ti3O12 (BLT) with Pt electrodes are studied. The improved fatigue resistance of PZT and PLT at a low temperature can be explained by the defect-induced suppression of domain switch/nucleation near the film/electrode interface, which requires a long-range diffusion of defects and charges. It is argued that the fatigue effect of SBT and BLT is attributed to the competition between domain-wall pinning and depinning. The perovskitelike slabs and/or (Bi2O2)2+ layers act as barriers for long-range diffusion of defects and charges, resulting in localization of the defects and charges. Thus, the fatigued SBT and BLT can be easily rejuvenated by a high electric field over a wide temperature range. © 2004 American Institute of Physics.
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77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.55.-g Dielectric thin films
77.80.Dj Domain structure; hysteresis
77.80.Fm Switching phenomena
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