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3 May 2004

Volume 84, Issue 18, pp. 3435-3703

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Appl. Phys. Lett. 84, 3648 (2004); http://dx.doi.org/10.1063/1.1737470 (3 pages)

Jingbo Li and Lin-Wang Wang
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Piezoelectric response of engineered domains in ferroelectrics

Rajeev Ahluwalia, Turab Lookman, Avadh Saxena, and Wenwu Cao

Appl. Phys. Lett. 84, 3450 (2004); http://dx.doi.org/10.1063/1.1737059 (3 pages) | Cited 12 times

Online Publication Date: 20 April 2004

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We study the formation of engineered ferroelectric domains in two dimensions based on a continuum approach that incorporates the long-range elastic and electrostatic interactions. The model is also used to simulate the piezoelectric properties of the engineered domain configurations and the response is compared with that of an analogous single domain state. The results show that the low field piezoelectric constants for the engineered configuration are very close to those obtained for the corresponding single domain state and the domain wall influence is not significant. For high fields, domain walls act as nucleation sites for an electric field induced structural transition. © 2004 American Institute of Physics.
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77.65.Bn Piezoelectric and electrostrictive constants
77.84.-s Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials
64.60.Q- Nucleation
77.80.Dj Domain structure; hysteresis
77.65.Ly Strain-induced piezoelectric fields
64.70.K- Solid-solid transitions
81.30.Hd Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder

Double-well model of dielectric relaxation current

John R. Jameson, Walter Harrison, P. B. Griffin, and J. D. Plummer

Appl. Phys. Lett. 84, 3489 (2004); http://dx.doi.org/10.1063/1.1738177 (3 pages) | Cited 15 times

Online Publication Date: 20 April 2004

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We show that a straightforward account of dielectric relaxation current in glasses follows from a semiclassical treatment of the double-well model [P. W. Anderson, B. I. Halperin, and C. M. Varma, Philos. Mag. 25, 1 (1972) and W. A. Phillips, J. Low Temp. Phys. 7, 351 (1972)] explaining the linear specific heat of glasses at low temperature. The current is obtained from the field-induced tunneling of the glass between the minima of its potential energy surface, and is found to have the experimentally observed linear dependence on field and inverse dependence on time. The effects of temperature and prior biases are briefly discussed, as well as the relation of the model to the theory of charge trapping. No dielectric relaxation is expected in a perfect insulating crystal, raising the important technological question of how perfect high-k dielectrics like HfO2 and ZrO2 must be in order to serve as gate dielectrics in transistors.© 2004 American Institute of Physics.
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77.22.Gm Dielectric loss and relaxation
65.40.Ba Heat capacity
77.22.Ch Permittivity (dielectric function)

Preparation and optical waveguide property of metal alkoxide solution-derived Pb(Zr0.5Ti0.5)O3 thick films

S. H. Hu, X. J. Meng, G. J. Hu, J. H. Chu, N. Dai, L. Xu, L. Y. Liu, and D. X. Li

Appl. Phys. Lett. 84, 3609 (2004); http://dx.doi.org/10.1063/1.1738178 (3 pages) | Cited 6 times

Online Publication Date: 20 April 2004

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Pb(Zr0.5Ti0.5)O3 films with thickness of about 1.5 and 3.7 μm have been deposited on single-crystal SrTiO3 substrate by a sol-gel process from nonhydrolyzed metal alkoxide precursor. X-ray diffraction shows that the films exhibit a single perovskite phase with (001)-preferred orientation. Atomic force microscopy study indicates that the PZT film possesses a crack-free and smooth surface. The optical waveguide property has been examined by the prism-film coupling experiment. Four and 12 TE modes are observed for 1.5 and 3.7 μm PZT films, respectively. © 2004 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
68.55.-a Thin film structure and morphology
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
68.37.Ps Atomic force microscopy (AFM)
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
68.35.B- Structure of clean surfaces (and surface reconstruction)
78.66.Nk Insulators

Ferroelectric properties of La and Zr substituted Bi4Ti3O12 thin films

S. T. Zhang, Y. F. Chen, J. Wang, G. X. Cheng, Z. G. Liu, and N. B. Ming

Appl. Phys. Lett. 84, 3660 (2004); http://dx.doi.org/10.1063/1.1738936 (3 pages) | Cited 31 times

Online Publication Date: 20 April 2004

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Thin films of A-site substituted, B-site substituted, and both A- and B-sites cosubstituted Bi4Ti3O12 (BTO) by La3+ and Zr4+, i.e., Bi3.25La0.75Ti3O12 (BLT), Bi4Ti2.8Zr0.2O12 (BTZ), and Bi3.25La0.75Ti2.8Zr0.2O12 (BLTZ), were fabricated on Pt/Ti/SiO2/Si substrates by pulsed laser deposition. Structures of the films are investigated by x-ray diffraction, Raman spectroscopy, and scanning electron microscopy. Compared to the well known BLT films, both the BTZ and BLTZ films have larger remanent polarization (Pr) but smaller coercive field (Ec). It is shown experimentally that the oxygen vacancy is the predominant factor determining ferroelectric fatigue. The effects of substitution on structural and ferroelectric properties of BTO are discussed in detail. As a result, the A- and B-sites cosubstitution might be one of the promising ways to improve ferroelectric properties of BTO. © 2004 American Institute of Physics.
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77.55.-g Dielectric thin films
81.15.Fg Pulsed laser ablation deposition
77.22.Ej Polarization and depolarization
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
61.72.J- Point defects and defect clusters
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
77.80.-e Ferroelectricity and antiferroelectricity
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
78.30.Hv Other nonmetallic inorganics
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