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3 May 2004

Volume 84, Issue 18, pp. 3435-3703

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Appl. Phys. Lett. 84, 3648 (2004); http://dx.doi.org/10.1063/1.1737470 (3 pages)

Jingbo Li and Lin-Wang Wang
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Cyclic surface morphology change related to Li ion movement in Li secondary microbattery embedded in Si substrate: Atomic force microscopy studies

K. Kushida and K. Kuriyama

Appl. Phys. Lett. 84, 3456 (2004); http://dx.doi.org/10.1063/1.1737070 (3 pages) | Cited 6 times

Online Publication Date: 20 April 2004

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Surface morphology and charge/discharge characteristic in a 5×5 μm2 area of an all-solid-state Li secondary battery (Al/Li/SiO2–15 at. %P2O5/LiMn2O4/polycrystalline silicon) embedded in a Si substrate are simultaneously observed by atomic force microscopy with a conductive probe. The battery area of 5×5 μm2 shows charge/discharge behavior corresponding to the movement of ∼ 2.9×1010 Li+ ions/μm2, reflecting the cyclic movement of Li+ ions. The Al electrode consisting of scale-shaped grains of 0.1–1.5 μm in size rises by ∼ 30 nm during the first charge operation. The surface of the Al electrode shows a cyclic change from scaly to wrinkled structures with the charge/discharge operations, indicating the drawing of the excess Li in the anode into the glassy electrolyte. These results are promising for the realization of a micrometer-sized battery. © 2004 American Institute of Physics.
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82.47.Aa Lithium-ion batteries
68.35.B- Structure of clean surfaces (and surface reconstruction)

Raman line shape of the A1 longitudinal optical phonon in GaN

L. Shi, F. A. Ponce, and J. Menéndez

Appl. Phys. Lett. 84, 3471 (2004); http://dx.doi.org/10.1063/1.1737792 (3 pages) | Cited 7 times

Online Publication Date: 20 April 2004

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High-resolution Raman measurements of the A1 longitudinal optical (LO) phonon in GaN reveal a complex line shape that can be explained in terms of the angular dispersion of LO phonons in this material. A simple geometrical model of the line shape makes it possible to extract the true anharmonic full width at half maximum 2Γ of the A1(LO) mode. The value of this parameter, 2Γ=2.4 cm−1 at 20 K, is in much better agreement with time-domain measurements by Tsen and co-workers [Appl. Phys. Lett. 72, 2132 (1998)] than any previous frequency-domain measurement. The results indicate that angular dispersion effects must be carefully considered in any analysis of Raman spectra from noncubic crystals. © 2004 American Institute of Physics.
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81.05.Ea III-V semiconductors
78.30.Fs III-V and II-VI semiconductors
63.20.Ry Anharmonic lattice modes

Toward ultrahigh-flux photovoltaic concentration

Jeffrey M. Gordon, Eugene A. Katz, Daniel Feuermann, and Mahmoud Huleihil

Appl. Phys. Lett. 84, 3642 (2004); http://dx.doi.org/10.1063/1.1723690 (3 pages) | Cited 30 times

Online Publication Date: 20 April 2004

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We report experimental results with a miniature fiber-optic photovoltaic concentrator with (a) deliverable power density up to 104 suns (10 W/mm2), (b) solar cell efficiencies above 30%, (c) completely passive cooling, (d) uniform and individualized cell illumination, and (e) assembly from readily available components. Measurements include the sensitivity of the conversion efficiency of tandem III–V cells to (1) power input, (2) flux distribution, and (3) the modified spectrum from the fiber-optic concentrators. Our results augur favorably for the feasibility of such designs at concentration levels as high as thousands of suns. © 2004 American Institute of Physics.
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42.79.Ek Solar collectors and concentrators
84.60.Jt Photoelectric conversion
73.61.Ey III-V semiconductors

Organic light-emitting devices with laminated top contacts

Daniel A. Bernards, Tomasz Biegala, Zachary A. Samuels, Jason D. Slinker, George G. Malliaras, Samuel Flores-Torres, Héctor D. Abruña, and John A. Rogers

Appl. Phys. Lett. 84, 3675 (2004); http://dx.doi.org/10.1063/1.1739270 (3 pages) | Cited 29 times

Online Publication Date: 20 April 2004

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We demonstrate the fabrication of organic light-emitting devices based on a ruthenium complex with indium tin oxide anodes and laminated Au cathodes. Light emission was uniform over the whole device area, indicating a high-quality mechanical and electrical contact. The devices showed no rectification, indicating that the laminated contact was ohmic and caused no damage to the ruthenium complex. Comparison with devices using evaporated Au cathodes confirmed the quality of the lamination process. © 2004 American Institute of Physics.
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85.60.Jb Light-emitting devices
85.30.-z Semiconductor devices
85.40.Ls Metallization, contacts, interconnects; device isolation
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