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Appl. Phys. Lett. 84, 3885 (2004); http://dx.doi.org/10.1063/1.1738934 (3 pages)

InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures

J. J. Wierer1, M. R. Krames1, J. E. Epler1, N. F. Gardner1, M. G. Craford1, J. R. Wendt2, J. A. Simmons2, and M. M. Sigalas3

1Advanced Laboratories, Lumileds Lighting, 370 W. Trimble Rd., San Jose, California 95131
2Sandia National Laboratories, P. O. Box 5800, Albuquerque, New Mexico 87185
3Agilent Laboratories, Agilent Technologies, 3500 Deer Creek Rd., Palo Alto, California 94304

(Received 22 December 2003; accepted 11 March 2004; published online 29 April 2004)

Electrical operation of InGaN/GaN quantum-well heterostructure photonic crystal light-emitting diodes (PXLEDs) is demonstrated. A triangular lattice photonic crystal is formed by dry etching into the top GaN layer. Light absorption from the metal contact is minimized because the top GaN layers are engineered to provide lateral current spreading, allowing carrier recombination proximal to the photonic crystal yet displaced from the metal contact. The chosen lattice spacing for the photonic crystal causes Bragg scattering of guided modes out of the LED, increasing the extraction efficiency. The far-field radiation patterns of the PXLEDs are heavily modified and display increased radiance, up to ∼ 1.5 times brighter compared to similar LEDs without the photonic crystal. © 2004 American Institute of Physics.

© 2004 American Institute of Physics

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KEYWORDS and PACS

PACS

  • 85.60.Jb

    Light-emitting devices

  • 85.30.De

    Semiconductor-device characterization, design, and modeling

  • 73.63.Hs

    Quantum wells

ARTICLE DATA

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

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