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10 May 2004

Volume 84, Issue 19, pp. 3723-3937

Issue Cover Spotlight Figure

Appl. Phys. Lett. 84, 3933 (2004); http://dx.doi.org/10.1063/1.1745103 (3 pages)

A. Cassinese, G. M. De Luca, A. Prigiobbo, M. Salluzzo, and R. Vaglio
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Liquid-phase fabrication of patterned carbon nanotube field emission cathodes

S. J. Oh, J. Zhang, Y. Cheng, H. Shimoda, and O. Zhou

Appl. Phys. Lett. 84, 3738 (2004); http://dx.doi.org/10.1063/1.1737074 (3 pages) | Cited 52 times

Online Publication Date: 29 April 2004

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High-resolution electron field emission cathodes were fabricated at room temperature by a high throughput electrophoresis process using functionalized carbon nanotubes (CNTs). Well-defined and adherent CNT patterns with 20 μm feature size were achieved on a variety of substrates with fine control of the CNT morphology. The cathodes show uniform emission pattern across the entire surfaces and emission current with long-term stability. This room-temperature liquid-phase process is efficient and has no intrinsic limit on the deposition area. The emission characteristics of these cathodes compare favorably to those from other fabrication methods for CNT based field emission display applications. © 2004 American Institute of Physics.
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81.07.De Nanotubes
85.35.Kt Nanotube devices
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
68.55.A- Nucleation and growth
82.45.-h Electrochemistry and electrophoresis
82.45.Fk Electrodes
79.70.+q Field emission, ionization, evaporation, and desorption

X-ray photoelectron spectroscopy study on SiO2/Si interface structures formed by three kinds of atomic oxygen at 300 °C

M. Shioji, T. Shiraishi, K. Takahashi, H. Nohira, K. Azuma, Y. Nakata, Y. Takata, S. Shin, K. Kobayashi, and T. Hattori

Appl. Phys. Lett. 84, 3756 (2004); http://dx.doi.org/10.1063/1.1737793 (3 pages) | Cited 8 times

Online Publication Date: 29 April 2004

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Using the high-brilliant synchrotron radiation at SPring-8 we have studied the SiO2/Si interface structures, the interface state densities, and the uniformities of ∼1-nm-thick oxide films formed by three kinds of atomic oxygen at 300 °C by measuring Si 2p photoelectron spectra at the photon energy of 1050 eV and the energy loss spectra of O 1s photoelectrons at the photon energy of 714 eV. Among silicon oxide films studied here the abrupt compositional transition at SiO2/Si interface, the smallest deviation in interface state density, the interface state density comparable to that for thermal oxide formed in dry oxygen at 950 °C, and the highest uniformity was obtained with oxide film formed in krypton-mixed oxygen (Kr:O2 = 97:3) plasma. © 2004 American Institute of Physics.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
68.35.Ct Interface structure and roughness
79.60.-i Photoemission and photoelectron spectra
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
79.20.Uv Electron energy loss spectroscopy
68.49.Jk Electron scattering from surfaces

Fabrication of ZnO quantum dots embedded in an amorphous oxide layer

Kyoung-Kook Kim, Nobuyuki Koguchi, Young-Woo Ok, Tae-Yeon Seong, and Seong-Ju Park

Appl. Phys. Lett. 84, 3810 (2004); http://dx.doi.org/10.1063/1.1741030 (3 pages) | Cited 53 times

Online Publication Date: 29 April 2004

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ZnO quantum dots (QDs) have been fabricated by the growth of SiO2/ZnO films/Si substrate and subsequent rapid-thermal annealing in a N2 ambient. Transmission electron microscopy (TEM) results show that the ZnO QDs 3–7 nm in size are formed and embedded in the amorphous silicon oxide interfacial layer when annealed at 850 °C. Photoluminescence (PL) at room temperature from the 850 °C-annealed samples reveals only high-energy emission at about 3.37 eV, while PL at 10 K shows a broad spectra with a tail up to about 3.5 eV. The TEM and PL results indicate that the broad spectra are caused by the presence of the ZnO QDs and hence by the quantum confinement effect. © 2004 American Institute of Physics.
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81.05.Dz II-VI semiconductors
81.07.Ta Quantum dots
78.66.Hf II-VI semiconductors
81.15.Cd Deposition by sputtering
68.37.Lp Transmission electron microscopy (TEM)
78.55.Et II-VI semiconductors
78.67.Hc Quantum dots

Size dependence of the work function in InAs quantum dots on GaAs(001) as studied by Kelvin force probe microscopy

T. Yamauchi, M. Tabuchi, and A. Nakamura

Appl. Phys. Lett. 84, 3834 (2004); http://dx.doi.org/10.1063/1.1745110 (3 pages) | Cited 10 times

Online Publication Date: 29 April 2004

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We have investigated a work function of single InAs quantum dots (QDs) on GaAs(001) correlating with the dot size by means of Kelvin force probe microscopy. The observed contact potential difference (CPD) of the single QD is lower than that of an InAs wetting layer, and increases with decreasing QD height. The height dependence of the CPD is well interpreted in terms of the quantum size effect by which the amount of accumulated charges in the QD is determined through the confinement energy levels in the QD. © 2004 American Institute of Physics.
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73.21.La Quantum dots
73.40.Cg Contact resistance, contact potential
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.37.Ps Atomic force microscopy (AFM)

Self-assembled growth and optical emission of silver-capped silicon nanowires

T. Qiu, X. L. Wu, X. Yang, G. S. Huang, and Z. Y. Zhang

Appl. Phys. Lett. 84, 3867 (2004); http://dx.doi.org/10.1063/1.1753063 (3 pages) | Cited 24 times

Online Publication Date: 29 April 2004

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Structured silver-capped silicon nanowires were fabricated via electroless metal deposition on a silicon wafer in an ionic silver HF solution through selective chemical etching. Their formation mechanism was explained on the basis of self-assembled localized microscopic electrochemical cell model. The metal–semiconductor composite nanostructure was found to have a strong ultraviolet-emitting property with an emission peak position at 330 nm. The intensity of the peak nonmonotonously varies with annealing temperature and time, but its position remains unchanged. Emission and excitation spectral analyses suggest that the ultraviolet emission is closely related to the existence of silver vacancy defects in silver nanocaps formed during sample fabrication. A specific vacancy density is required to produce the strong ultraviolet emission. © 2004 American Institute of Physics.
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78.67.Lt Quantum wires
81.16.Dn Self-assembly

Postdeposition organic coating and self-assembly of gas phase prepared FePt nanoparticles on lipid reservoir films

Annegret Terheiden, Christian Mayer, Karsten Moh, Burkhard Stahlmecke, Sonja Stappert, Mehmet Acet, and Bernd Rellinghaus

Appl. Phys. Lett. 84, 3891 (2004); http://dx.doi.org/10.1063/1.1738943 (3 pages) | Cited 14 times

Online Publication Date: 29 April 2004

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A method for the postdeposition organic coating of metallic nanoparticles is introduced. FePt nanoparticles from the gas phase are deposited onto Si substrates which are pre-coated with multilayers of phospholipid molecules by spin coating. If the substrate temperature is just below or above the temperature, at which the phospholipids undergo a phase transition from the liquid crystalline into an intermediate phase, the particles are enwrapped by the lipids. The particles exhibit a clear tendency to self-assemble in regular two-dimensional particle arrangements. © 2004 American Institute of Physics.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase

Fabrication and magnetic properties of fcc CoXPt1−X nanowires

Jeremy Mallet, K. Yu-Zhang, Chia-Ling Chien, Tom S. Eagleton, and Peter C. Searson

Appl. Phys. Lett. 84, 3900 (2004); http://dx.doi.org/10.1063/1.1739274 (3 pages) | Cited 32 times

Online Publication Date: 29 April 2004

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CoXPt1−X alloy nanowires were fabricated by electrochemical template synthesis from a solution containing both Co(II) and Pt(II) ions. Over a wide range of deposition conditions, single-phase, fcc CoXPt1−X alloy nanowires were obtained. The nanowires exhibit both shape and magnetocrystalline anisotropy leading to large coercivity and high remanence along the wire axis. The magnetocrystalline anisotropy constant Ku was determined for 〈111〉 textured nanowires. © 2004 American Institute of Physics.
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81.07.Vb Quantum wires
75.75.-c Magnetic properties of nanostructures

Indium-assisted synthesis on GaN nanotubes

Long-Wei Yin, Yoshio Bando, Ying-Chun Zhu, Dmitri Golberg, Long-Wei Yin, and Mu-Sen Li

Appl. Phys. Lett. 84, 3912 (2004); http://dx.doi.org/10.1063/1.1741026 (3 pages) | Cited 23 times

Online Publication Date: 29 April 2004

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Gallium nitride (GaN) nanotubes in a high yield were synthesized by a simple indium-assisted thermal evaporation method in the presence of NH3 gas flowing. A vapor–liquid–solid process was proposed for formation of the GaN nanotubes. The synthesized GaN nanotubes were amorphous and partially filled with indium, several micrometers in length, 40–50 nm in outer diameter, and 7 nm for the tube wall thickness. The representative photoluminescence spectrum at room temperature exhibits a great shift from the band gap of 3.40 eV (365 nm) of bulk GaN to high energy of 3.63 eV (342 nm). The synthetic route for the GaN nanotubes is simple and effective, and could provide great opportunities for both fundamental and technological applications. © 2004 American Institute of Physics.
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81.05.Ea III-V semiconductors
81.07.De Nanotubes
78.67.Ch Nanotubes
64.70.F- Liquid-vapor transitions
61.43.Er Other amorphous solids
78.55.Cr III-V semiconductors
71.20.Nr Semiconductor compounds
64.70.D- Solid-liquid transitions
78.66.Fd III-V semiconductors
71.20.Tx Fullerenes and related materials; intercalation compounds
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