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5 Jan 2004

Volume 84, Issue 1, pp. 1-157

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Appl. Phys. Lett. 84, 151 (2004); http://dx.doi.org/10.1063/1.1637950 (3 pages)

M. Feng, N. Holonyak, and W. Hafez
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Mg-doped C60 thin film as improved n-type organic semiconductor for a solar cell

Masayuki Chikamatsu, Tetsuya Taima, Yuji Yoshida, Kazuhiro Saito, and Kiyoshi Yase

Appl. Phys. Lett. 84, 127 (2004); http://dx.doi.org/10.1063/1.1637943 (3 pages) | Cited 19 times

Online Publication Date: 30 December 2003

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Mg doping effect on a [2-methoxy, 5-(2′-ethylhexyloxy)-1,4-phenylene-vinylene] (MEH-PPV)/C60 bilayer solar cell has been investigated. We find that the Mg doping occurs during the deposition of the Mg top electrode onto the C60 film and that the solar cell property is markedly improved by the doping. The power conversion efficiency of the Mg-doped device under 100 mW/cm2 white light illumination is 0.54%, which is approximately 400 times larger than that of the nondoped device. © 2004 American Institute of Physics.
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61.72.up Other materials
84.60.Jt Photoelectric conversion

Efficient electrophosphorescent polymer light-emitting devices using a Cs/Al cathode

A. Nakamura, T. Tada, M. Mizukami, and S. Yagyu

Appl. Phys. Lett. 84, 130 (2004); http://dx.doi.org/10.1063/1.1637966 (3 pages) | Cited 37 times

Online Publication Date: 30 December 2003

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Efficient electrophosphorescent polymer light-emitting devices have been developed using a Cs/Al cathode. The materials used were a molecularly doped poly(9-vinylcarbazole)-emissive layer with electrophosphorescent complexes: bis[2-(2′-benzothienyl)-pyridinato-N,C3′](acetylacetonate)Ir(III) as a red emitter, fac-tris(2-phenylpyridyl)Ir(III) as a green emitter, and bis[(4,6-difluorophenyl)-pyridinato-N,C2](picolinato)Ir(III) as a blue emitter. The red, green, and blue electrophosphorescent emitting devices exhibited efficient emissions of 4, 31, and 14 cd/A, respectively. An inspection of secondary ion mass spectroscopy (SIMS) profiles confirmed that Cs diffuses into both Al and the emissive layer. Also, a Cs concentration of approximately 1 atomic% was estimated to be present at the interface from x-ray photoelectron spectroscopy (XPS) profiles. © 2004 American Institute of Physics.
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85.60.Jb Light-emitting devices
42.70.Jk Polymers and organics
66.30.Ny Chemical interdiffusion; diffusion barriers
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)
68.35.Fx Diffusion; interface formation
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)

Magnetic-field-assisted assembly of metal/polymer/metal junction sensors

Haiqian Zhang, Salah Boussaad, Nguyen Ly, and Nongjian J. Tao

Appl. Phys. Lett. 84, 133 (2004); http://dx.doi.org/10.1063/1.1633678 (3 pages) | Cited 14 times

Online Publication Date: 30 December 2003

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We present a method to assemble Au/polyaniline/Au junctions and demonstrate a chemical sensor application. The building blocks consist of an array of microelectrodes on a silicon chip, microfabricated metallic bars, and a thin polyaniline layer deposited on the microelectrodes or on the bars. The individual bars suspended in solution are placed, with the help of a magnetic field, across the microelectrodes to form the junctions. The polyaniline layer is ∼30 nm thick and modified with glycine-glycine-histidine oligopeptides. Strong binding of Cu2+ to the oligopeptide is converted into a conductance change of the junctions, allowing selective detection of trace amounts of Cu+2 ions. © 2004 American Institute of Physics.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices

Controlled-junction superconducting quantum interference device via phonon injection

G. D. Hutchinson, H. Qin, D. G. Hasko, D. J. Kang, and D. A. Williams

Appl. Phys. Lett. 84, 136 (2004); http://dx.doi.org/10.1063/1.1638627 (3 pages) | Cited 2 times

Online Publication Date: 30 December 2003

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The direct current superconducting quantum interference device (DC-SQUID), using controlled Josephson junction technology, provides a mechanism to modify the characteristics of the device post-fabrication. We report on the fabrication and measurement of a micron sized DC-SQUID using two Dayem bridge weak-link Josephson junctions with integrated “heaters.” The weak link critical current is controlled by hot phonons from the current biased titanium, normal metal heater. By using the heaters, control over the critical current oscillations of the SQUID was observed at 4.2K. © 2004 American Institute of Physics.
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85.25.Dq Superconducting quantum interference devices (SQUIDs)
74.25.Sv Critical currents
74.40.-n Fluctuation phenomena

Monte Carlo simulation of hot-carrier phenomena in open quantum devices: A kinetic approach

Remo Proietti Zaccaria, Rita Claudia Iotti, and Fausto Rossi

Appl. Phys. Lett. 84, 139 (2004); http://dx.doi.org/10.1063/1.1637965 (3 pages) | Cited 8 times

Online Publication Date: 30 December 2003

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An alternative simulation strategy for the study of nonequilibrium carrier dynamics in quantum devices with open boundaries is presented. In particular, we propose replacing the usual modeling of open quantum systems based on phenomenological injection/loss rates with a kinetic description of the system-reservoir thermalization process. More specifically, in this simulation scheme the partial carrier thermalization induced by the device spatial boundaries is treated within the standard Monte Carlo approach via an effective scattering mechanism between the highly nonthermal device electrons and the thermal carrier distribution of the reservoir. The proposed simulation strategy is applyed to state-of-the-art semiconductor nanostructures. © 2004 American Institute of Physics.
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02.70.Ss Quantum Monte Carlo methods
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
85.35.Ds Quantum interference devices

Organic thin-film transistors in sandwich configuration

Jian Zhang, Jun Wang, Haibo Wang, and Donghang Yan

Appl. Phys. Lett. 84, 142 (2004); http://dx.doi.org/10.1063/1.1638634 (3 pages) | Cited 58 times

Online Publication Date: 30 December 2003

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Organic thin-film transistors (OTFTs) having source/drain electrodes sandwiched between copper phthalocyanine (CuPc) and cobalt phthalocyanine (CoPc) layers, CuPc/CoPc SC OTFTs, are investigated. Comparing their properties with that of CuPc-based top-contact OTFT, field-effect mobility increases from 0.04 to 0.11 cm2/Vs, threshold voltage shifts from −13.8 to −8.9 V, and the current on/off ratio maintains at a level of 105. A top-contact OTFT with a layer of CuPc and a layer of CoPc (10%)–CuPc mixture reveals that the combination of CuPc and CoPc enhances charge injection from the source electrode into the active layer and increases the off-state current. The sandwich configuration increases the field-effect mobility, reduce the threshold voltage, and improve the on/off ratio at the same time. Our results indicate that using a double-layer of active organic materials in sandwich configuration is an effective way to improve OTFT performance. © 2004 American Institute of Physics.
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85.30.Tv Field effect devices
73.50.Dn Low-field transport and mobility; piezoresistance
73.61.Ph Polymers; organic compounds

High-efficiency solar cells on edge-defined film-fed grown (18.2%) and string ribbon (17.8%) silicon by rapid thermal processing

A. Rohatgi, D. S. Kim, K. Nakayashiki, V. Yelundur, and B. Rounsaville

Appl. Phys. Lett. 84, 145 (2004); http://dx.doi.org/10.1063/1.1638636 (3 pages) | Cited 14 times

Online Publication Date: 30 December 2003

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Solar cell efficiencies of 18.2 and 17.8% were achieved on edge-defined film-fed grown and string ribbon multicrystalline silicon, respectively. Improved understanding and hydrogenation of defects in ribbon materials contributed to the significant increase in bulk lifetime from 1–5 μs to as high as 90–100 μs during cell processing. It was found that SiNx-induced defect hydrogenation in these ribbon materials takes place within one second at 740–750 °C. The bulk lifetime decreases at annealing temperatures above 750 °C or annealing times above one second due to the enhanced dissociation of the hydrogenated defects coupled with the decrease in hydrogen supply from the SiNx film deposited by plasma enhanced chemical vapor deposition. © 2004 American Institute of Physics.
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84.60.Jt Photoelectric conversion
81.05.Cy Elemental semiconductors
61.72.Cc Kinetics of defect formation and annealing
71.55.Cn Elemental semiconductors
81.10.Fq Growth from melts; zone melting and refining

Highly efficient electrophosphorescence devices based on rhenium complexes

Feng Li, Ming Zhang, Gang Cheng, Jing Feng, Yi Zhao, Yuguang Ma, Shiyong Liu, and Jiacong Shen

Appl. Phys. Lett. 84, 148 (2004); http://dx.doi.org/10.1063/1.1638635 (3 pages) | Cited 39 times

Online Publication Date: 30 December 2003

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Highly efficient electrophosphorescence from light-emitting devices based on two types of rhenium(I) diimine complexes, (1,10-phenanthroline)Re(CO)3Cl (phen-Re) and (2,9-dimethyl-1,10-phenanthroline)Re(CO)3Cl (dmphen-Re), is reported. N, N′-di-1-naphthyl-N, N′-diphenylbenzidine is used as the hole-transporting layer. 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline is used to confine excitons within the luminescence zone. phen-Re and dmphen-Re are doped into the host material (4,4′-N-N′-dicarbazole)biphenyl with mass ratios of 2–20% as the light-emitting layer, respectively. The maximum efficiency and brightness achieved from the devices based on phen-Re and dmphen-Re are 6.67 cd/A and 2769 cd/m2, and 7.15 cd/A and 3686 cd/m2, respectively. © 2004 American Institute of Physics.
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85.60.Jb Light-emitting devices
78.55.Kz Solid organic materials
78.60.Fi Electroluminescence

Light-emitting transistor: Light emission from InGaP/GaAs heterojunction bipolar transistors

M. Feng, N. Holonyak, and W. Hafez

Appl. Phys. Lett. 84, 151 (2004); http://dx.doi.org/10.1063/1.1637950 (3 pages) | Cited 29 times

Online Publication Date: 30 December 2003

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This letter reports the direct observation of the radiative recombination in the graded base layer of InGaP/GaAs heterojunction bipolar transistors (HBTs). For a 1 μm×16 μm emitter HBT, we demonstrate the change of the spontaneous light emission intensity (ΔIout) as the base current (Δib) of the HBT is varied from 0 to 5 mA, i.e., an HBT operating as a light-emitting transistor. We also demonstrate output light modulation from the base layer at 1 MHz with the base current modulated at 1 MHz in normal transistor mode operation of the HBT. © 2004 American Institute of Physics.
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85.60.Jb Light-emitting devices
85.30.Pq Bipolar transistors
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