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5 Jan 2004

Volume 84, Issue 1, pp. 1-157

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Appl. Phys. Lett. 84, 151 (2004); http://dx.doi.org/10.1063/1.1637950 (3 pages)

M. Feng, N. Holonyak, and W. Hafez
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Water absorption and dielectric changes in crystalline poly(vinylidene fluoride-trifluoroethylene) copolymer films

P. A. Jacobson, Luis G. Rosa, C. M. Othon, Kristin L. Kraemer, A. V. Sorokin, Stephen Ducharme, and P. A. Dowben

Appl. Phys. Lett. 84, 88 (2004); http://dx.doi.org/10.1063/1.1637127 (3 pages) | Cited 17 times

Online Publication Date: 30 December 2003

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Crystalline Langmuir–Blodgett copolymer films of vinylidene fluoride with trifluoroethylene (70%:30% and 80%:20%) absorb water. Water absorption is accompanied by film swelling, as indicated by an increase in lattice spacing, sometimes by as much as 5%. This water absorption, between 0 and 40 °C, is a result of intercalation or occupation of interstitial sites between the layers of the film, not just water molecules filling voids and defect sites alone. An increase in the film capacitance is observed, although the polymer chains retain all trans configuration of the ferroelectric phase. © 2004 American Institute of Physics.
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77.84.Jd Polymers; organic compounds
77.55.-g Dielectric thin films
68.47.Pe Langmuir-Blodgett films on solids; polymers on surfaces; biological molecules on surfaces
68.43.-h Chemisorption/physisorption: adsorbates on surfaces

Epitaxial growth and properties of metastable BiMnO3 thin films

António F. Moreira dos Santos, Anthony K. Cheetham, Wei Tian, Xiaoqing Pan, Yunfa Jia, Nathan J. Murphy, James Lettieri, and Darrell G. Schlom

Appl. Phys. Lett. 84, 91 (2004); http://dx.doi.org/10.1063/1.1636265 (3 pages) | Cited 37 times

Online Publication Date: 30 December 2003

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Epitaxial thin films of BiMnO3 were deposited on single-crystal substrates of (100)-oriented SrTiO3 by pulsed-laser deposition. Structural analysis by x-ray diffraction, electron diffraction, and transmission electron microscopy (TEM) indicated that the films were monoclinic and twinned with two dominant orientation relationships. The first is (111) BiMnO3 ∥ (100) SrTiO3 and ∼ [math01] BiMnO3 ∥ 〈010〉 SrTiO3; the second is (10math) BiMnO3 ∥ (100) SrTiO3 and ∼ [121] BiMnO3 ∥ 〈010〉 SrTiO3. High-resolution TEM images revealed that there is no reaction or appreciable interdiffusion at the substrate/film interface, despite the high temperature of the substrate during deposition (∼1000 K). Magnetic characterization was carried out (both magnetization versus temperature and hysteresis loops) and the results agree with previous reports of a ferromagnetic transition with TC∼105 K. The actual value of TC in the films is a few degrees lower than the bulk material, the discrepancy being attributed to strain, nonstoichiometry, or size effects. © 2004 American Institute of Physics.
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68.55.-a Thin film structure and morphology
75.70.Ak Magnetic properties of monolayers and thin films
81.15.Fg Pulsed laser ablation deposition
75.50.Dd Nonmetallic ferromagnetic materials
68.35.Ct Interface structure and roughness
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects

Positive temperature coefficient of resistivity in paraelectric (Ba,Sr)TiO3 thin films

Doo Seok Jeong, Kun Ho Ahn, Woo Young Park, and Cheol Seong Hwang

Appl. Phys. Lett. 84, 94 (2004); http://dx.doi.org/10.1063/1.1637946 (3 pages) | Cited 10 times

Online Publication Date: 30 December 2003

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The previously reported positive temperature coefficient of the resistivity (PTCR) observed in paraelectric BST thin films was again analyzed in terms of the non-Ohmic resistance as a result of an anode interface energy barrier induced by the high local charge density and interface energy states. The decrease in the low frequency dielectric constant, which is the dielectric constant relevant to the PTCR effect, with increasing temperature has a larger effect on the anode energy barrier than the temperature increase itself under a high bias voltage. In this case, the slope in the current-voltage curve at higher temperature decreases, which appears as the PTCR effect when the resistance is measured as a function of temperature under high voltages. © 2004 American Institute of Physics.
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77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ch Permittivity (dielectric function)
71.45.Lr Charge-density-wave systems

Thermal stability of plasma-nitrided aluminum oxide films on Si

K. P. Bastos, R. P. Pezzi, L. Miotti, G. V. Soares, C. Driemeier, J. Morais, I. J. R. Baumvol, C. Hinkle, and G. Lucovsky

Appl. Phys. Lett. 84, 97 (2004); http://dx.doi.org/10.1063/1.1638629 (3 pages) | Cited 4 times

Online Publication Date: 30 December 2003

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The effect of post-deposition rapid thermal annealing in vacuum and in dry O2 on the stability of remote plasma-assisted nitrided aluminum oxide films on silicon is investigated. The areal densities of Al, O, N, and Si were determined by nuclear reaction analysis and their concentration versus depth distributions by narrow nuclear reaction resonance profiling, with subnanometric depth resolution. Annealing in both vacuum and O2 atmospheres produced partial loss of N from the near-surface regions of the films and its transport into near-interface regions of the Si substrate. Oxygen from the gas phase was incorporated in the AlON films in exchange for O and N previously existing therein, as well as in the near-interface regions of the Si substrate, leading to oxynitridation of the substrate. Al and Si remained essentially immobile under rapid thermal processing, confirming that the presence of nitrogen improves the thermal stability characteristics of the AlON/Si structures in comparison with non-nitrided Al2O3/Si. © 2004 American Institute of Physics.
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81.65.Lp Surface hardening: nitridation, carburization, carbonitridation
68.60.Dv Thermal stability; thermal effects
81.65.Mq Oxidation

Domain structure and polarization properties of lanthanum-substituted bismuth titanate single crystals

Masayuki Soga, Yuji Noguchi, Masaru Miyayama, Hirotake Okino, and Takashi Yamamoto

Appl. Phys. Lett. 84, 100 (2004); http://dx.doi.org/10.1063/1.1638631 (3 pages) | Cited 30 times

Online Publication Date: 30 December 2003

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Single crystals of bismuth titanate (BiT) and lanthanum-substituted BiT [Bi4−xLaxTi3O12 (BLT)] were grown by a self-flux method. BLT (x = 0.85) showed a smaller remanent polarization (2Pr) along the a(b) axis of 41 μC/cm2 than 98 μC/cm2 for BiT, which mainly originates in its smaller ionic displacements along the a axis. Striped 90° domain walls as well as head-to-head and tail-to-tail 180° domain walls were observed for both crystals, and La substitution led to a marked decrease in the 90° domain width from 8.5 μm (BiT) to 2.5 μm for BLT (x = 1.20). Piezoelectric-force microscope observations suggested that antiphase domain boundary (ADB) is present only for BLT and the ADB plays an important role in the formation of the 90° domain. © 2004 American Institute of Physics.
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77.80.Dj Domain structure; hysteresis
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.

Spontaneous recovery of hydrogen-degraded TiO2 ceramic capacitors

W. P. Chen, Y. Wang, J. Y. Dai, S. G. Lu, X. X. Wang, P. F. Lee, H. L. W. Chan, and C. L. Choy

Appl. Phys. Lett. 84, 103 (2004); http://dx.doi.org/10.1063/1.1637942 (3 pages) | Cited 10 times

Online Publication Date: 30 December 2003

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Degradation of TiO2-based ceramic capacitors was observed after hydrogen incorporation on the termination electrodes of the capacitors via electrolysis of water. Fourier-transform infrared (FTIR) absorption spectra analysis of polished rutile single crystals clearly showed that hydrogen was incorporated into the TiO2 lattice through the treatment. Hydrogen reduces Ti4+ to Ti3+ and increases the concentration of charge carriers. The degradation was found to exhibit a strong dependence on time at room temperature. The degraded properties were spontaneously recovered through an aging process, showing a spontaneous recovery unique to TiO2-based ceramic capacitors. It is proposed that hydrogen is metastable in TiO2 and that hydrogen-induced degradation has different stabilities among various oxide-based components and devices. © 2004 American Institute of Physics.
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84.32.Tt Capacitors
78.30.Hv Other nonmetallic inorganics

Stability and band offsets of nitrogenated high-dielectric-constant gate oxides

G. Shang, P. W. Peacock, and J. Robertson

Appl. Phys. Lett. 84, 106 (2004); http://dx.doi.org/10.1063/1.1638896 (3 pages) | Cited 57 times

Online Publication Date: 30 December 2003

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We find that addition of nitrogen to high-dielectric-constant gate oxides such as HfO2, La2O3, and silicates adds gap states up to 1.2 eV above their valence-band edge. This reduces the valence-band offset, but not by enough to reduce the hole injection barrier to unsafe levels. Nitrogen also leads to a decrease in average atomic coordination, which may help to increase their resistance to crystallization and ability to withstand high temperature processing. © 2004 American Institute of Physics.
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77.55.-g Dielectric thin films
85.30.Tv Field effect devices
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