• Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

Year Range: 
Search Issue | RSS Feeds RSS
Next Issue

5 Jan 2004

Volume 84, Issue 1, pp. 1-157

Issue Cover Spotlight Figure

Appl. Phys. Lett. 84, 151 (2004); http://dx.doi.org/10.1063/1.1637950 (3 pages)

M. Feng, N. Holonyak, and W. Hafez
back to top
RSS Feeds

Enhancement at low temperatures of the critical current density for Au-coated MgB2 thin films

Eun-Mi Choi, Hyun-Sook Lee, Heon-Jung Kim, Sung-Ik Lee, Hyeong-Jin Kim, and W. N. Kang

Appl. Phys. Lett. 84, 82 (2004); http://dx.doi.org/10.1063/1.1637944 (3 pages) | Cited 21 times

Online Publication Date: 30 December 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We measured the superconducting critical current densities (Jc) from the magnetization hysteresis (MH) loop for Au-coated MgB2 thin films. The purpose of this experiment was to determine whether the vortex avalanche phenomenon which suppresses the Jc for low temperature (T<15 K) and low field (H ⩽ 1000 Oe) could be cured by gold deposition. This avalanche, called flux noise, has been a headache in applications of MgB2 thin films. Fortunately, the flux noise in the MH loop is suppressed with increasing Au-film thickness and finally disappears when the thickness of the gold becomes 2.55 μm. We found a way to remove one obstacle for applications of MgB2 thin films as an superconducting device. © 2004 American Institute of Physics.
Show PACS
74.25.Sv Critical currents
74.78.-w Superconducting films and low-dimensional structures
74.25.Ha Magnetic properties including vortex structures and related phenomena

Magnetic bipolar transistor

Jaroslav Fabian, Igor Žutić, and S. Das Sarma

Appl. Phys. Lett. 84, 85 (2004); http://dx.doi.org/10.1063/1.1637954 (3 pages) | Cited 45 times

Online Publication Date: 30 December 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A magnetic bipolar transistor is a bipolar junction transistor with one or more magnetic regions, and/or with an externally injected nonequilibrium (source) spin. It is shown that electrical spin injection through the transistor is possible in the forward active regime. It is predicted that the current amplification of the transistor can be tuned by spin. © 2004 American Institute of Physics.
Show PACS
85.30.Pq Bipolar transistors
85.30.De Semiconductor-device characterization, design, and modeling
Close
Google Calendar
ADVERTISEMENT

close