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17 May 2004

Volume 84, Issue 20, pp. 3957-4121

Issue Cover Spotlight Figure

Appl. Phys. Lett. 84, 4104 (2004); http://dx.doi.org/10.1063/1.1753068 (3 pages)

Tetsuya Akasaka, Toshio Nishida, Toshiki Makimoto, and Naoki Kobayashi
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Atomic layer deposition of lanthanum aluminum oxide nano-laminates for electrical applications

Booyong S. Lim, Antti Rahtu, Philippe de Rouffignac, and Roy G. Gordon

Appl. Phys. Lett. 84, 3957 (2004); http://dx.doi.org/10.1063/1.1739272 (3 pages) | Cited 37 times

Online Publication Date: 3 May 2004

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Lanthanum aluminum oxide thin films were grown by atomic layer deposition from a lanthanum precursor, tris(N,N′-diisopropylacetamidinato)lanthanum (La(iPrAMD)3), trimethylaluminum and water. Smooth, amorphous films having compositions La0.5Al1.5O3 and La0.9Al1.1O3 were deposited on HF-last silicon and characterized without postdeposition annealing. The films contained less than 1 at. % of carbon according to Rutherford backstattering spectrometry and secondary ion mass spectrometry. A thin (9.8 nm) film showed low leakage current (<5∗10−8 A/cm2 at 1 V for an equivalent oxide thickness of 2.9 nm), flatband voltage of −0.1 V and low hysteresis (20 mV). Thicker films had even lower leakage currents (<10−8 A/cm2 at 2 MV/cm) but larger flatband shifts and more hysteresis. The permittivity of the films was 13 and the dielectric strength 4 MV/cm. Cross sectional high-resolution transmission electron microscopy showed a sharp interface between the film and the silicon substrate. © 2004 American Institute of Physics.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.55.-g Dielectric thin films
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Reflectivity behavior of opals of gold nanoparticle coated spheres

P. T. Miclea, A. S. Susha, Z. Liang, F. Caruso, C. M. Sotomayor Torres, and S. G. Romanov

Appl. Phys. Lett. 84, 3960 (2004); http://dx.doi.org/10.1063/1.1739512 (3 pages) | Cited 18 times

Online Publication Date: 3 May 2004

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The light reflectance in three-dimensional metallodielectric photonic crystals assembled from polyelectrolyte-coated latex spheres infiltrated with gold nanoparticles has been studied. Strong deviation of the optical reflectance of Au opals from bare opals has been observed, including flattening of the diffraction resonance dispersion and nondispersive surface plasmon bands. © 2004 American Institute of Physics.
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78.66.Vs Fine-particle systems
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
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Optical near-field mapping of excitons and biexcitons in naturally occurring semiconductor quantum dots

Ulrich Hohenester, Guido Goldoni, and Elisa Molinari

Appl. Phys. Lett. 84, 3963 (2004); http://dx.doi.org/10.1063/1.1741033 (3 pages) | Cited 17 times

Online Publication Date: 3 May 2004

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We calculate the near-field optical spectra of excitons and biexcitons in semiconductor quantum dots naturally occurring at interface fluctuations in GaAs-based quantum wells, using a nonlocal description of the response function to a spatially modulated electromagnetic field. The relative intensity of the lowest, far-field forbidden excitonic states is predicted; the spatial extension of the ground biexciton state is found, in agreement with recently published experiments. © 2004 American Institute of Physics.
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73.21.La Quantum dots
71.35.-y Excitons and related phenomena
78.66.Fd III-V semiconductors
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Methodology for optimizing viewing characteristics of top-emitting organic light-emitting devices

Chung-Chih Wu, Chun-Liang Lin, Ping-Yuan Hsieh, and Huo-Hsien Chiang

Appl. Phys. Lett. 84, 3966 (2004); http://dx.doi.org/10.1063/1.1745107 (3 pages) | Cited 48 times

Online Publication Date: 3 May 2004

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Top-emitting organic light-emitting devices (OLEDs) have a few technical merits for active-matrix OLED displays. Generally stronger microcavity effects inherent in top-emitting OLEDs, however, complicate optimization of device efficiency and other viewing characteristics. In this letter, using the rigorous classical electromagnetic model, we analyze emission characteristics of top-emitting OLEDs as a function of device structures. From the comprehensive analysis, trends in the dependence of emission characteristics on device structures are extracted, and accordingly, a general methodology for optimizing viewing characteristics of top-emitting OLEDs for display applications is suggested. The effectiveness of the analysis and the methodology is confirmed by experimental results. © 2004 American Institute of Physics.
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85.60.Jb Light-emitting devices
85.60.Pg Display systems
85.30.De Semiconductor-device characterization, design, and modeling
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Selectable-frequency and tunable-Q perfect transmissions of electromagnetic waves in dielectric heterostructures

Z. Wang, R. W. Peng, F. Qiu, X. Q. Huang, Mu Wang, A. Hu, S. S. Jiang, and D. Feng

Appl. Phys. Lett. 84, 3969 (2004); http://dx.doi.org/10.1063/1.1748848 (3 pages) | Cited 10 times

Online Publication Date: 3 May 2004

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Multiple perfect transmissions of electromagnetic waves are found in the photonic band gap of the symmetric dielectric heterostructures (SDH) constructed as (AB)nBm(BA)n, where A and B stand for different dielectric materials, and m and n are the repeating numbers of the units. The photonic frequency and the mode number of resonant transmissions therein can be manipulated by varying m, and the quality factor Q of the perfect transmission peak increases exponentially with increasing n. These features are experimentally demonstrated in a SDH of TiO2/SiO2 for visible and near infrared light. The possible applications of SDH for the wavelength division multiplexing system are discussed. © 2004 American Institute of Physics.
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41.20.Jb Electromagnetic wave propagation; radiowave propagation
42.70.Qs Photonic bandgap materials
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
68.65.Ac Multilayers
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
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Four-probe charge transport measurements on individual vertically aligned carbon nanofibers

Lan Zhang, Derek Austin, Vladimir I. Merkulov, Anatoli V. Meleshko, Kate L. Klein, Michael A. Guillorn, Douglas H. Lowndes, and Michael L. Simpson

Appl. Phys. Lett. 84, 3972 (2004); http://dx.doi.org/10.1063/1.1748849 (3 pages) | Cited 31 times

Online Publication Date: 3 May 2004

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We report four-probe I–V measurements on individual vertically aligned carbon nanofibers (VACNFs). These measurements were enabled by the fabrication of multiple Ti/Au ohmic contacts on individual fibers that exhibited resistance of only a few kilohms. These measurements demonstrate that VACNFs exhibit linear I–V behavior at room temperature, with a resistivity of approximately 4.2×10−3 Ω cm. Our measurements are consistent with a dominant transport mechanism of electrons traveling through intergraphitic planes in the VACNFs. © 2004 American Institute of Physics.
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81.07.De Nanotubes
73.63.Fg Nanotubes
73.63.Rt Nanoscale contacts
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Dual structures in (1−x)Pb(Zn1/3Nb2/3)O3−xPbTiO3 ferroelectric relaxors

Guangyong Xu, H. Hiraka, G. Shirane, and K. Ohwada

Appl. Phys. Lett. 84, 3975 (2004); http://dx.doi.org/10.1063/1.1751216 (3 pages) | Cited 40 times

Online Publication Date: 3 May 2004

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We performed x-ray diffraction studies on a series of (1−x)Pb(Zn1/3Nb2/3)O3−xPbTiO3 single crystals with different incident photon energies, and therefore different penetration depths. Our results show that outer layers of ∼ 10–50 μm thick are present in all samples. The structure of those outer layers is different from that of the inside of the crystals, by having much greater (rhombohedral) distortions. With increasing x, rhombohedral-type lattice distortions develop, both in the outer layer and on the inside. © 2004 American Institute of Physics.
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77.80.-e Ferroelectricity and antiferroelectricity
61.66.Fn Inorganic compounds
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
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Organic-metal-semiconductor transistor with high gain

M. S. Meruvia, I. A. Hümmelgen, M. L. Sartorelli, A. A. Pasa, and W. Schwarzacher

Appl. Phys. Lett. 84, 3978 (2004); http://dx.doi.org/10.1063/1.1751218 (3 pages) | Cited 27 times

Online Publication Date: 3 May 2004

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We use evaporated C60 as the emitter in a vertical transistor structure with Au base and Si collector. The proportion of emitted electrons that overcome the barrier is measured as at least 0.99. Our metal-base transistor is easy to fabricate as it does not involve wafer bonding or require perfect semiconductor-on-metal growth. © 2004 American Institute of Physics.
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85.30.De Semiconductor-device characterization, design, and modeling
85.30.Pq Bipolar transistors
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GaInAs/GaAs quantum-well growth assisted by Sb surfactant: Toward 1.3 μm emission

J. C. Harmand, L. H. Li, G. Patriarche, and L. Travers

Appl. Phys. Lett. 84, 3981 (2004); http://dx.doi.org/10.1063/1.1751221 (3 pages) | Cited 31 times

Online Publication Date: 3 May 2004

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The growth of highly strained GaInAs quantum wells on GaAs is investigated in the presence of Sb. Sb appears as an adequate isoelectronic surfactant: the lateral relaxation of strain is shown to be significantly delayed in comparison with a Sb-free growth. This effect is used to extend the emission wavelength of GaInAs quantum wells. We obtained a 9-nm-thick Ga0.59In0.41As0.986Sb0.008 quantum wells with smooth interfaces, emitting at 1.27 μm at room temperature. © 2004 American Institute of Physics.
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81.07.St Quantum wells
68.65.Fg Quantum wells
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Coherent control of intersubband optical bistability in quantum wells

H. O. Wijewardane and C. A. Ullrich

Appl. Phys. Lett. 84, 3984 (2004); http://dx.doi.org/10.1063/1.1751611 (3 pages) | Cited 35 times

Online Publication Date: 3 May 2004

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We present a study of the nonlinear intersubband (ISB) response of conduction electrons in a GaAs/Al0.3Ga0.7As quantum well to strong terahertz (THz) radiation, using a density-matrix approach combined with time-dependent density-functional theory. We demonstrate coherent control of ISB optical bistability, using THz control pulses to induce picosecond switching between the bistable states. The switching speed is determined by the ISB relaxation and decoherence times, T1 and T2. © 2004 American Institute of Physics.
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78.67.De Quantum wells
42.65.Pc Optical bistability, multistability, and switching, including local field effects
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Direct-write method for domain inversion patterns in LiNbO3

V. Dierolf and C. Sandmann

Appl. Phys. Lett. 84, 3987 (2004); http://dx.doi.org/10.1063/1.1753057 (3 pages) | Cited 27 times

Online Publication Date: 3 May 2004

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We have developed a technique to directly write stable ferroelectric domain patterns into lithium niobate crystals using visible light from an argon laser tightly focused to a diffraction limited spot in a confocal luminescence microscope. The patterns produced exhibit feature sizes down to 2 μm and show very little strain. The coercive field was reduced by as much as 30%. From the dynamics of the process, we attribute the reduction in coercive field to space charge fields produced by photoionization of defects. We have ruled out the possibility that the reduction in coercive field is simply a result of increased temperature by making local temperature measurements using the Stokes/anti-Stokes intensity ratio in confocal Raman measurements. © 2004 American Institute of Physics.
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77.80.Dj Domain structure; hysteresis
77.22.Jp Dielectric breakdown and space-charge effects
82.50.Hp Processes caused by visible and UV light
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
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Low-loss fiber accessible plasmon waveguide for planar energy guiding and sensing

Stefan A. Maier, Paul E. Barclay, Thomas J. Johnson, Michelle D. Friedman, and Oskar Painter

Appl. Phys. Lett. 84, 3990 (2004); http://dx.doi.org/10.1063/1.1753060 (3 pages) | Cited 27 times

Online Publication Date: 3 May 2004

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A metal nanoparticle plasmon waveguide for electromagnetic energy transport utilizing dispersion engineering to increase lateral energy confinement via a two-dimensional pattern of Au dots on an optically thin Si membrane is described. Using finite-difference time-domain simulations and coupled-mode theory, we show that phase-matched evanescent excitation from conventional fiber tapers is possible with efficiencies >90% for realistic geometries. Energy loss in this waveguide is mainly due to material absorption, allowing for 1/e energy decay distances of about 320 μm for excitation at telecommunication frequencies. This concept can be extended to the visible regime and promises applications in optical energy guiding, optical sensing, and switching. © 2004 American Institute of Physics.
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42.82.Et Waveguides, couplers, and arrays
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
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Influence of relative wafer rotation on the electrical properties of the bonded SiC/SiC interface

G. N. Yushin and Z. Sitar

Appl. Phys. Lett. 84, 3993 (2004); http://dx.doi.org/10.1063/1.1753065 (3 pages) | Cited 2 times

Online Publication Date: 3 May 2004

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Atomically clean SiC wafers with a root-mean-square roughness of 2 nm were bonded in ultrahigh vacuum at 20 MPa of applied uniaxial pressure at temperatures as low as 800 °C. Electrical measurements showed that azimuthal orientation of the bonded couple significantly influences the electrical character of the junction. A low-resistance ohmic interface can be created by high-temperature fusion of aligned 6H–SiC/6H–SiC wafers. © 2004 American Institute of Physics.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Metal/Al-doped ZnO ohmic contact for AlGaN/GaN high electron mobility transistor

K. Nishizono, M. Okada, M. Kamei, D. Kikuta, K. Tominaga, Y. Ohno, and J. P. Ao

Appl. Phys. Lett. 84, 3996 (2004); http://dx.doi.org/10.1063/1.1738175 (3 pages) | Cited 4 times

Online Publication Date: 5 May 2004

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Ohmic property for AlGaN/GaN high electron mobility transistor was investigated by insetting a highly Al-doped ZnO between the metal and AlGaN/GaN structure. The Al-doped ZnO was deposited by dc magnetron sputtering method and Ti/Al/Ni/Au was deposited on the ZnO by evaporation. Prior to the ZnO deposition, the surface of the samples was treated by O2 plasma, HCl and NH4OH, respectively. Good ohmic performance was obtained with contact resistance of 2.7 Ω mm even without annealing. The lowest contact resistance was 2.0 Ω mm after being annealed at 300 °C for the sample with HCl treatment before ZnO deposition. © 2004 American Institute of Physics.
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73.40.Cg Contact resistance, contact potential
52.77.Dq Plasma-based ion implantation and deposition
85.30.Tv Field effect devices
61.72.Cc Kinetics of defect formation and annealing
81.15.Cd Deposition by sputtering
81.65.-b Surface treatments
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
73.40.Ns Metal-nonmetal contacts
85.40.Ls Metallization, contacts, interconnects; device isolation
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Thermionic and tunneling cooling thermodynamics

Hui Tong Chua, Xiaolin Wang, and Jeffrey M. Gordon

Appl. Phys. Lett. 84, 3999 (2004); http://dx.doi.org/10.1063/1.1738939 (3 pages) | Cited 4 times

Online Publication Date: 5 May 2004

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We unambiguously identify and derive the irreversibilities and entropy fluxes of the quantum and classical processes that intrinsically limit the performance of thermionic and tunneling chillers. The fundamental tradeoff between cooling flux and efficiency can then be evaluated, including the ramifications for feasible cooling regimes. Quantitative illustrations are provided for real solid-state devices. We cast these results as trajectories in the temperature-entropy plane and unify the thermodynamic perspective of these quantum chillers with that of conventional cooling cycles. © 2004 American Institute of Physics.
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07.20.Mc Cryogenics; refrigerators, low-temperature detectors, and other low-temperature equipment
79.40.+z Thermionic emission
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Low-loss GaInNAs saturable absorber mode locking a 1.3-μm solid-state laser

V. Liverini, S. Schön, R. Grange, M. Haiml, S. C. Zeller, and U. Keller

Appl. Phys. Lett. 84, 4002 (2004); http://dx.doi.org/10.1063/1.1748841 (3 pages) | Cited 29 times

Online Publication Date: 5 May 2004

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We have demonstrated stable self-starting passive cw mode locking of a solid-state laser at about 1.3 μm using a GaInNAs semiconductor saturable absorber mirror (SESAM). GaInNAs SESAMs show negligible nonsaturable losses, low saturation fluences (11 μJ/cm2) and picosecond decay times which make them well-suited for self-starting and stable cw mode locking. Sub-10-ps pulses were produced with a Nd:YLF laser at 1314 nm. The incorporation of about 2% nitrogen into InGaAs redshifts the absorption edge above 1330 nm and reduces the strain in the saturable absorber grown on a GaAs/AlAs Bragg mirror. Final absorption edge adjustments have been made with thermal annealing which blueshifts the absorption edge. © 2004 American Institute of Physics.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.Fc Modulation, tuning, and mode locking
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In situ detection of faradaic current in probe oxidation using a dynamic force microscope

Hiromi Kuramochi, Kazunori Ando, Takashi Tokizaki, and Hiroshi Yokoyama

Appl. Phys. Lett. 84, 4005 (2004); http://dx.doi.org/10.1063/1.1748842 (3 pages) | Cited 17 times

Online Publication Date: 5 May 2004

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A faradaic current on the order of a sub-pico-ampere was detected while fabricating two-dimensional oxide nanostructures on H-passivated Si(001) surfaces. The detected faradaic current has been shown to faithfully reflect the degree of probe oxidation with a clear dependence on the variation of voltage and the tip speed. The faradaic current in dynamic mode can serve as a sensitive monitor of the nano-oxidation reaction for implementing precise closed-loop control of the oxide growth. © 2004 American Institute of Physics.
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81.16.Nd Micro- and nanolithography
81.16.Pr Micro- and nano-oxidation
68.37.Ps Atomic force microscopy (AFM)

Interaction of vapor-deposited Ti and Au with molecular wires

A. V. Walker, T. B. Tighe, J. Stapleton, B. C. Haynie, S. Upilli, D. L. Allara, and N. Winograd

Appl. Phys. Lett. 84, 4008 (2004); http://dx.doi.org/10.1063/1.1748844 (3 pages) | Cited 30 times

Online Publication Date: 5 May 2004

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We have investigated the interaction of vapor-deposited titanium and gold with a self-assembled monolayer (SAM) of 4-[4′-(phenylethynyl)-phenylethynyl]-benzenthiol, an unsubstituted oligo(phenylene-ethynylene), chemisorbed on a gold substrate, a typical SAM of interest for molecular electronics. Deposited titanium atoms are observed to react in a top-down fashion with the SAM molecules to form Ti–C bonds, destroying the monolayer structure. In contrast, deposited Au atoms undergo continuous penetration through the monolayer, even at high coverages, leaving the SAM “floating” on the Au substrate surface. © 2004 American Institute of Physics.
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68.43.Mn Adsorption kinetics
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
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Study of the temperature-dependent interaction of 4H–SiC and 6H–SiC surfaces with atomic hydrogen

Maria Losurdo, Giovanni Bruno, April Brown, and Tong-Ho Kim

Appl. Phys. Lett. 84, 4011 (2004); http://dx.doi.org/10.1063/1.1748845 (3 pages) | Cited 8 times

Online Publication Date: 5 May 2004

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The interaction of 4H– and 6H–SiC (0001)Si surfaces with atomic hydrogen produced by a remote rf plasma source is investigated. The impact of the low temperature (200 °C) and high temperature (750 °C) interaction on chemical and morphological surface modifications is addressed with in situ real time monitoring using spectroscopic ellipsometry. It is found that the interaction of SiC surfaces with atomic hydrogen at 200 °C is suitable for producing clean, atomically ordered, smooth and terraced surfaces with a stoichiometry associated with a mathxmathR30° reconstruction, ideal for GaN heteroepitaxy. © 2004 American Institute of Physics.
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81.65.Ps Polishing, grinding, surface finishing
61.66.Bi Elemental solids
61.66.Dk Alloys
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.37.Ps Atomic force microscopy (AFM)
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Electric-field-induced dynamics in radial liquid crystal droplets studied by multiphoton-excited fluorescence microscopy

Aifang Xie and Daniel A. Higgins

Appl. Phys. Lett. 84, 4014 (2004); http://dx.doi.org/10.1063/1.1748846 (3 pages) | Cited 9 times

Online Publication Date: 5 May 2004

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Time-resolved multiphoton-excited fluorescence microscopy is used to study electric-field-induced reorientation dynamics in single liquid crystal (LC) droplets within polymer-dispersed liquid crystal films. Films comprised of nematic LC dispersed in a poly(isobutyl methacrylate) matrix are characterized. An electric field is applied laterally across each droplet, using two parallel copper wires embedded in the film. Three-photon excited fluorescence images are recorded with 200 μs time resolution as the field is modulated on and off. Dramatic spatial variations in the time scales for orientational relaxation within individual droplets are observed. These effects are attributed to polymer/LC interfacial interactions and relaxation of the LC through a transient, metastable organizational state. © 2004 American Institute of Physics.
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42.79.Kr Display devices, liquid-crystal devices
61.30.Pq Microconfined liquid crystals: droplets, cylinders, randomly confined liquid crystals, polymer dispersed liquid crystals, and porous systems
61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order
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Self-assembled monolayer resist for atomic layer deposition of HfO2 and ZrO2 high-κ gate dielectrics

Rong Chen, Hyoungsub Kim, Paul C. McIntyre, and Stacey F. Bent

Appl. Phys. Lett. 84, 4017 (2004); http://dx.doi.org/10.1063/1.1751211 (3 pages) | Cited 31 times

Online Publication Date: 5 May 2004

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A molecular layer resist for HfO2 and ZrO2 atomic layer deposition (ALD) was demonstrated by using self-assembled monolayers (SAMs). X-ray photoelectron spectroscopy and transmission electron microscopy indicated that silicon samples terminated with octadecyltrichlorosilane (ODTS) were deactivated with respect to subsequent ALD of metal oxide gate dielectrics, under conditions in which standard chemical oxide passivated substrates are highly effective templates for ALD film growth. A time-dependent investigation of SAM formation showed that the efficiency of deactivation depends strongly on the quality of the SAMs, with a high-quality, closely packed ODTS film crucial for achieving complete blocking of the HfO2 and ZrO2 ALD process. © 2004 American Institute of Physics.
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85.40.Sz Deposition technology
81.16.Dn Self-assembly
68.37.Lp Transmission electron microscopy (TEM)
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Superconductivity in La-doped strontium titanate thin films

David Olaya, Feng Pan, Charles T. Rogers, and Jonn C. Price

Appl. Phys. Lett. 84, 4020 (2004); http://dx.doi.org/10.1063/1.1751213 (3 pages) | Cited 3 times

Online Publication Date: 5 May 2004

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We report on the superconductivity of lanthanum-doped SrTiO3 thin films grown by off-axis laser ablation on LaAlO3, SrTiO3, and NdGaO3 substrates in oxygen partial pressures ranging from 10−8 T to 21 mTorr. The La/Sr doping ratio of the ablation target was 1%. The resulting films have carrier densities measured in the range of 6.5–30×1019 cm−3 independent of temperature from room temperature to 4 K and low-temperature mobilities as high as 130 cm2/V s. Critical temperatures range between 356 down to about 48 mK depending on oxygen partial pressure during growth. Measurements of superconductive transitions in a magnetic field suggest a value of the electronic effective mass around 4.5 times the free electron mass. © 2004 American Institute of Physics.
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74.78.-w Superconducting films and low-dimensional structures
74.70.Dd Ternary, quaternary, and multinary compounds (including Chevrel phases, borocarbides, etc.)
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Multi-excitonic complexes in single InGaN quantum dots

R. Seguin, S. Rodt, A. Strittmatter, L. Reißmann, T. Bartel, A. Hoffmann, D. Bimberg, E. Hahn, and D. Gerthsen

Appl. Phys. Lett. 84, 4023 (2004); http://dx.doi.org/10.1063/1.1751214 (3 pages) | Cited 37 times

Online Publication Date: 5 May 2004

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Cathodoluminescence spectra employing a shadow mask technique of InGaN layers grown by metalorganic chemical vapor deposition on Si(111) substrates are reported. Sharp lines originating from InGaN quantum dots are observed. Temperature dependent measurements reveal thermally induced carrier redistribution between the quantum dots. Spectral diffusion is observed and was used as a tool to correlate up to three lines that originate from the same quantum dot. Variation of excitation density leads to identification of exciton and biexciton. Binding and anti-binding complexes are discovered. © 2004 American Institute of Physics.
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78.67.Hc Quantum dots
78.60.Hk Cathodoluminescence, ionoluminescence
71.35.-y Excitons and related phenomena
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Analysis of plasma treatment and vapor heat treatment for thin-film transistors by extracting trap densities at front and back interfaces

Mutsumi Kimura, Daisuke Abe, Satoshi Inoue, Tatsuya Shimoda, and Simon W.-B. Tam

Appl. Phys. Lett. 84, 4026 (2004); http://dx.doi.org/10.1063/1.1751215 (3 pages) | Cited 2 times

Online Publication Date: 5 May 2004

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Hydrogen (H) plasma treatment, oxygen (O) plasma treatment and water (H2O)-vapor heat treatment for polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) have been analyzed by separately extracting trap density at a front silicon-oxide interface (DF) and trap density at a back interface (DB). It is found that the H plasma treatment is apt to generate DF and DB. The O plasma treatment reduces DF, while the H2O-vapor heat treatment reduces both DF and DB. Improvement of transistor characteristics of poly-Si TFTs depends on understanding these results. © 2004 American Institute of Physics.
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85.30.-z Semiconductor devices
81.40.Gh Other heat and thermomechanical treatments
52.77.-j Plasma applications
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Bulk metallic glass formation in the binary Cu–Zr system

D. Wang, Y. Li, B. B. Sun, M. L. Sui, K. Lu, and E. Ma

Appl. Phys. Lett. 84, 4029 (2004); http://dx.doi.org/10.1063/1.1751219 (3 pages) | Cited 179 times

Online Publication Date: 5 May 2004

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Using the Cu–Zr model system, we demonstrate that bulk amorphous alloys can be obtained by copper mold casting even in a binary metallic system. The narrow, off-eutectic, bulk-glass-forming range was found to require composition pinpointing to <1 at. %. A phase selection diagram is used to explain the success of our microstructure-based approach to pinpoint the best glass former in a given system. The implications of discovering simple binary bulk amorphous alloys are discussed, in terms of its impact on understanding the formation and physics of bulk metallic glasses. © 2004 American Institute of Physics.
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61.66.Dk Alloys
64.70.P- Glass transitions of specific systems
64.70.Q- Theory and modeling of the glass transition
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