APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

SECTION LISTING

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

17 May 2004

Volume 84, Issue 20, pp. 3957-4121

Issue Cover Spotlight Figure

Appl. Phys. Lett. 84, 4104 (2004); http://dx.doi.org/10.1063/1.1753068 (3 pages)

Tetsuya Akasaka, Toshio Nishida, Toshiki Makimoto, and Naoki Kobayashi
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

Atomic layer deposition of lanthanum aluminum oxide nano-laminates for electrical applications

Booyong S. Lim, Antti Rahtu, Philippe de Rouffignac, and Roy G. Gordon

Appl. Phys. Lett. 84, 3957 (2004); http://dx.doi.org/10.1063/1.1739272 (3 pages) | Cited 37 times

Online Publication Date: 3 May 2004

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Lanthanum aluminum oxide thin films were grown by atomic layer deposition from a lanthanum precursor, tris(N,N′-diisopropylacetamidinato)lanthanum (La(iPrAMD)3), trimethylaluminum and water. Smooth, amorphous films having compositions La0.5Al1.5O3 and La0.9Al1.1O3 were deposited on HF-last silicon and characterized without postdeposition annealing. The films contained less than 1 at. % of carbon according to Rutherford backstattering spectrometry and secondary ion mass spectrometry. A thin (9.8 nm) film showed low leakage current (<5∗10−8 A/cm2 at 1 V for an equivalent oxide thickness of 2.9 nm), flatband voltage of −0.1 V and low hysteresis (20 mV). Thicker films had even lower leakage currents (<10−8 A/cm2 at 2 MV/cm) but larger flatband shifts and more hysteresis. The permittivity of the films was 13 and the dielectric strength 4 MV/cm. Cross sectional high-resolution transmission electron microscopy showed a sharp interface between the film and the silicon substrate. © 2004 American Institute of Physics.
Show PACS
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.55.-g Dielectric thin films

Dual structures in (1−x)Pb(Zn1/3Nb2/3)O3−xPbTiO3 ferroelectric relaxors

Guangyong Xu, H. Hiraka, G. Shirane, and K. Ohwada

Appl. Phys. Lett. 84, 3975 (2004); http://dx.doi.org/10.1063/1.1751216 (3 pages) | Cited 40 times

Online Publication Date: 3 May 2004

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We performed x-ray diffraction studies on a series of (1−x)Pb(Zn1/3Nb2/3)O3−xPbTiO3 single crystals with different incident photon energies, and therefore different penetration depths. Our results show that outer layers of ∼ 10–50 μm thick are present in all samples. The structure of those outer layers is different from that of the inside of the crystals, by having much greater (rhombohedral) distortions. With increasing x, rhombohedral-type lattice distortions develop, both in the outer layer and on the inside. © 2004 American Institute of Physics.
Show PACS
77.80.-e Ferroelectricity and antiferroelectricity
61.66.Fn Inorganic compounds
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates

Direct-write method for domain inversion patterns in LiNbO3

V. Dierolf and C. Sandmann

Appl. Phys. Lett. 84, 3987 (2004); http://dx.doi.org/10.1063/1.1753057 (3 pages) | Cited 27 times

Online Publication Date: 3 May 2004

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We have developed a technique to directly write stable ferroelectric domain patterns into lithium niobate crystals using visible light from an argon laser tightly focused to a diffraction limited spot in a confocal luminescence microscope. The patterns produced exhibit feature sizes down to 2 μm and show very little strain. The coercive field was reduced by as much as 30%. From the dynamics of the process, we attribute the reduction in coercive field to space charge fields produced by photoionization of defects. We have ruled out the possibility that the reduction in coercive field is simply a result of increased temperature by making local temperature measurements using the Stokes/anti-Stokes intensity ratio in confocal Raman measurements. © 2004 American Institute of Physics.
Show PACS
77.80.Dj Domain structure; hysteresis
77.22.Jp Dielectric breakdown and space-charge effects
82.50.Hp Processes caused by visible and UV light
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)

Self-assembled monolayer resist for atomic layer deposition of HfO2 and ZrO2 high-κ gate dielectrics

Rong Chen, Hyoungsub Kim, Paul C. McIntyre, and Stacey F. Bent

Appl. Phys. Lett. 84, 4017 (2004); http://dx.doi.org/10.1063/1.1751211 (3 pages) | Cited 31 times

Online Publication Date: 5 May 2004

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A molecular layer resist for HfO2 and ZrO2 atomic layer deposition (ALD) was demonstrated by using self-assembled monolayers (SAMs). X-ray photoelectron spectroscopy and transmission electron microscopy indicated that silicon samples terminated with octadecyltrichlorosilane (ODTS) were deactivated with respect to subsequent ALD of metal oxide gate dielectrics, under conditions in which standard chemical oxide passivated substrates are highly effective templates for ALD film growth. A time-dependent investigation of SAM formation showed that the efficiency of deactivation depends strongly on the quality of the SAMs, with a high-quality, closely packed ODTS film crucial for achieving complete blocking of the HfO2 and ZrO2 ALD process. © 2004 American Institute of Physics.
Show PACS
85.40.Sz Deposition technology
81.16.Dn Self-assembly
68.37.Lp Transmission electron microscopy (TEM)

Reduction of leakage current by Co doping in Pt/Ba0.5Sr0.5TiO3/Nb–SrTiO3 capacitor

S. Y. Wang, B. L. Cheng, Can Wang, S. Y. Dai, H. B. Lu, Y. L. Zhou, Z. H. Chen, and G. Z. Yang

Appl. Phys. Lett. 84, 4116 (2004); http://dx.doi.org/10.1063/1.1755421 (3 pages) | Cited 28 times

Online Publication Date: 5 May 2004

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Effect of Co doping on leakage current has been investigated in capacitor consisting of Ba0.5Sr0.5Ti1−xCoxO3 (BSTC, x = 0,0.002, 0.010) thin film, Pt top electrode, and Nb-doped SrTiO3 (STON) bottom electrode. Co doping remarkably decreases the leakage current in BSTC thin film, such as from 9×10−7 A in undoped thin film to 8×10−11 A in 1.0 at. % Co-doped BSTC thin film at bias voltage of 6 V. In the case of the Pt electrode positively biased, the leakage current shows space-charge-limited-current behavior. The trap-filled-limit voltage and the calculated trapped electron density increase with Co concentration in BSTC thin film. The mechanism of the reduction of the leakage current by Co doping is discussed. © 2004 American Institute of Physics.
Show PACS
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates

Characterization of hafnium aluminate gate dielectrics deposited by liquid injection metalorganic chemical vapor deposition

R. J. Potter, P. A. Marshall, P. R. Chalker, S. Taylor, A. C. Jones, T. C. Q. Noakes, and P. Bailey

Appl. Phys. Lett. 84, 4119 (2004); http://dx.doi.org/10.1063/1.1755424 (3 pages) | Cited 10 times

Online Publication Date: 5 May 2004

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Thin films of hafnium aluminate, with varying aluminum content, have been deposited by liquid injection metalorganic chemical vapor deposition using the metal alkoxide precursors hafnium methyl-methoxy-propanolate and aluminum iso-propoxide. X-ray diffraction analysis showed that the films were amorphous at aluminum concentrations above 7 at. %. Postdeposition annealing indicated that the oxide-transition temperature from amorphous to crystalline increased with aluminum content. Medium-energy ion scattering showed that up to 900 °C, internal oxidation of the silicon substrate had been inhibited. The capacitance–voltage characteristics of the films significantly improved following annealing in dry air. © 2004 American Institute of Physics.
Show PACS
77.55.-g Dielectric thin films
85.30.Tv Field effect devices
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close