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17 May 2004

Volume 84, Issue 20, pp. 3957-4121

Issue Cover Spotlight Figure

Appl. Phys. Lett. 84, 4104 (2004); http://dx.doi.org/10.1063/1.1753068 (3 pages)

Tetsuya Akasaka, Toshio Nishida, Toshiki Makimoto, and Naoki Kobayashi
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Influence of relative wafer rotation on the electrical properties of the bonded SiC/SiC interface

G. N. Yushin and Z. Sitar

Appl. Phys. Lett. 84, 3993 (2004); http://dx.doi.org/10.1063/1.1753065 (3 pages) | Cited 2 times

Online Publication Date: 3 May 2004

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Atomically clean SiC wafers with a root-mean-square roughness of 2 nm were bonded in ultrahigh vacuum at 20 MPa of applied uniaxial pressure at temperatures as low as 800 °C. Electrical measurements showed that azimuthal orientation of the bonded couple significantly influences the electrical character of the junction. A low-resistance ohmic interface can be created by high-temperature fusion of aligned 6H–SiC/6H–SiC wafers. © 2004 American Institute of Physics.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Metal/Al-doped ZnO ohmic contact for AlGaN/GaN high electron mobility transistor

K. Nishizono, M. Okada, M. Kamei, D. Kikuta, K. Tominaga, Y. Ohno, and J. P. Ao

Appl. Phys. Lett. 84, 3996 (2004); http://dx.doi.org/10.1063/1.1738175 (3 pages) | Cited 4 times

Online Publication Date: 5 May 2004

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Ohmic property for AlGaN/GaN high electron mobility transistor was investigated by insetting a highly Al-doped ZnO between the metal and AlGaN/GaN structure. The Al-doped ZnO was deposited by dc magnetron sputtering method and Ti/Al/Ni/Au was deposited on the ZnO by evaporation. Prior to the ZnO deposition, the surface of the samples was treated by O2 plasma, HCl and NH4OH, respectively. Good ohmic performance was obtained with contact resistance of 2.7 Ω mm even without annealing. The lowest contact resistance was 2.0 Ω mm after being annealed at 300 °C for the sample with HCl treatment before ZnO deposition. © 2004 American Institute of Physics.
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73.40.Cg Contact resistance, contact potential
52.77.Dq Plasma-based ion implantation and deposition
85.30.Tv Field effect devices
61.72.Cc Kinetics of defect formation and annealing
81.15.Cd Deposition by sputtering
81.65.-b Surface treatments
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
73.40.Ns Metal-nonmetal contacts
85.40.Ls Metallization, contacts, interconnects; device isolation

Study of the temperature-dependent interaction of 4H–SiC and 6H–SiC surfaces with atomic hydrogen

Maria Losurdo, Giovanni Bruno, April Brown, and Tong-Ho Kim

Appl. Phys. Lett. 84, 4011 (2004); http://dx.doi.org/10.1063/1.1748845 (3 pages) | Cited 8 times

Online Publication Date: 5 May 2004

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The interaction of 4H– and 6H–SiC (0001)Si surfaces with atomic hydrogen produced by a remote rf plasma source is investigated. The impact of the low temperature (200 °C) and high temperature (750 °C) interaction on chemical and morphological surface modifications is addressed with in situ real time monitoring using spectroscopic ellipsometry. It is found that the interaction of SiC surfaces with atomic hydrogen at 200 °C is suitable for producing clean, atomically ordered, smooth and terraced surfaces with a stoichiometry associated with a mathxmathR30° reconstruction, ideal for GaN heteroepitaxy. © 2004 American Institute of Physics.
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81.65.Ps Polishing, grinding, surface finishing
61.66.Bi Elemental solids
61.66.Dk Alloys
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.37.Ps Atomic force microscopy (AFM)

Analysis of plasma treatment and vapor heat treatment for thin-film transistors by extracting trap densities at front and back interfaces

Mutsumi Kimura, Daisuke Abe, Satoshi Inoue, Tatsuya Shimoda, and Simon W.-B. Tam

Appl. Phys. Lett. 84, 4026 (2004); http://dx.doi.org/10.1063/1.1751215 (3 pages) | Cited 2 times

Online Publication Date: 5 May 2004

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Hydrogen (H) plasma treatment, oxygen (O) plasma treatment and water (H2O)-vapor heat treatment for polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) have been analyzed by separately extracting trap density at a front silicon-oxide interface (DF) and trap density at a back interface (DB). It is found that the H plasma treatment is apt to generate DF and DB. The O plasma treatment reduces DF, while the H2O-vapor heat treatment reduces both DF and DB. Improvement of transistor characteristics of poly-Si TFTs depends on understanding these results. © 2004 American Institute of Physics.
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85.30.-z Semiconductor devices
81.40.Gh Other heat and thermomechanical treatments
52.77.-j Plasma applications

Influence of misfit dislocations on the electrical properties of CdTe layers grown by molecular beam epitaxy on InSb

G. M. Khattak, G. W. Matthews, C. G. Scott, and M. Yousaf

Appl. Phys. Lett. 84, 4053 (2004); http://dx.doi.org/10.1063/1.1751615 (3 pages) | Cited 2 times

Online Publication Date: 5 May 2004

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The electrical properties of n-CdTe films grown by molecular beam epitaxy on (001) InSb substrates have been studied with a view to examining the influence of dislocations arising from strain relaxation in these materials. It is shown that the observed nonuniformity in free carrier density as a function of depth through the films can be explained by electron trapping at dislocations assuming that the density of dislocations diminishes with distance from the substrate surface in proportion to the spatially distributed strain within the films. From a comparison of the experimentally deduced and theoretically derived values for the maximum dislocation density, it is concluded that CdTe layers grown using a stoichiometric Cd/Te flux are characterized by an interfacial layer, probably In2Te3, consistent with independent evidence from x-ray diffraction studies. © 2004 American Institute of Physics.
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73.61.Ga II-VI semiconductors
61.72.Lk Linear defects: dislocations, disclinations
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Temporal variation in photoluminescence from single InGaN quantum dots

James H. Rice, James W. Robinson, Anas Jarjour, Robert A. Taylor, Rachel A. Oliver, G. Andrew D. Briggs, Menno J. Kappers, and Colin J. Humphreys

Appl. Phys. Lett. 84, 4110 (2004); http://dx.doi.org/10.1063/1.1753653 (3 pages) | Cited 24 times

Online Publication Date: 5 May 2004

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We report measurements of optical transitions in single III/V (InGaN) quantum dots as a function of time. Temporal fluctuations in microphotoluminescence peak position and linewidth are demonstrated and attributed to spectral diffusion processes. The origin of this temporal variation is ascribed to randomly generated local electric fields inducing a Stark shift in the optical emission peaks of the InGaN quantum dots. © 2004 American Institute of Physics.
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78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
68.65.Hb Quantum dots (patterned in quantum wells)
78.20.Jq Electro-optical effects
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