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17 May 2004

Volume 84, Issue 20, pp. 3957-4121

Issue Cover Spotlight Figure

Appl. Phys. Lett. 84, 4104 (2004); http://dx.doi.org/10.1063/1.1753068 (3 pages)

Tetsuya Akasaka, Toshio Nishida, Toshiki Makimoto, and Naoki Kobayashi
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Reflectivity behavior of opals of gold nanoparticle coated spheres

P. T. Miclea, A. S. Susha, Z. Liang, F. Caruso, C. M. Sotomayor Torres, and S. G. Romanov

Appl. Phys. Lett. 84, 3960 (2004); http://dx.doi.org/10.1063/1.1739512 (3 pages) | Cited 18 times

Online Publication Date: 3 May 2004

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The light reflectance in three-dimensional metallodielectric photonic crystals assembled from polyelectrolyte-coated latex spheres infiltrated with gold nanoparticles has been studied. Strong deviation of the optical reflectance of Au opals from bare opals has been observed, including flattening of the diffraction resonance dispersion and nondispersive surface plasmon bands. © 2004 American Institute of Physics.
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78.66.Vs Fine-particle systems
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Selectable-frequency and tunable-Q perfect transmissions of electromagnetic waves in dielectric heterostructures

Z. Wang, R. W. Peng, F. Qiu, X. Q. Huang, Mu Wang, A. Hu, S. S. Jiang, and D. Feng

Appl. Phys. Lett. 84, 3969 (2004); http://dx.doi.org/10.1063/1.1748848 (3 pages) | Cited 10 times

Online Publication Date: 3 May 2004

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Multiple perfect transmissions of electromagnetic waves are found in the photonic band gap of the symmetric dielectric heterostructures (SDH) constructed as (AB)nBm(BA)n, where A and B stand for different dielectric materials, and m and n are the repeating numbers of the units. The photonic frequency and the mode number of resonant transmissions therein can be manipulated by varying m, and the quality factor Q of the perfect transmission peak increases exponentially with increasing n. These features are experimentally demonstrated in a SDH of TiO2/SiO2 for visible and near infrared light. The possible applications of SDH for the wavelength division multiplexing system are discussed. © 2004 American Institute of Physics.
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41.20.Jb Electromagnetic wave propagation; radiowave propagation
42.70.Qs Photonic bandgap materials
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
68.65.Ac Multilayers
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.

GaInAs/GaAs quantum-well growth assisted by Sb surfactant: Toward 1.3 μm emission

J. C. Harmand, L. H. Li, G. Patriarche, and L. Travers

Appl. Phys. Lett. 84, 3981 (2004); http://dx.doi.org/10.1063/1.1751221 (3 pages) | Cited 31 times

Online Publication Date: 3 May 2004

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The growth of highly strained GaInAs quantum wells on GaAs is investigated in the presence of Sb. Sb appears as an adequate isoelectronic surfactant: the lateral relaxation of strain is shown to be significantly delayed in comparison with a Sb-free growth. This effect is used to extend the emission wavelength of GaInAs quantum wells. We obtained a 9-nm-thick Ga0.59In0.41As0.986Sb0.008 quantum wells with smooth interfaces, emitting at 1.27 μm at room temperature. © 2004 American Institute of Physics.
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81.07.St Quantum wells
68.65.Fg Quantum wells

Electric-field-induced dynamics in radial liquid crystal droplets studied by multiphoton-excited fluorescence microscopy

Aifang Xie and Daniel A. Higgins

Appl. Phys. Lett. 84, 4014 (2004); http://dx.doi.org/10.1063/1.1748846 (3 pages) | Cited 9 times

Online Publication Date: 5 May 2004

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Time-resolved multiphoton-excited fluorescence microscopy is used to study electric-field-induced reorientation dynamics in single liquid crystal (LC) droplets within polymer-dispersed liquid crystal films. Films comprised of nematic LC dispersed in a poly(isobutyl methacrylate) matrix are characterized. An electric field is applied laterally across each droplet, using two parallel copper wires embedded in the film. Three-photon excited fluorescence images are recorded with 200 μs time resolution as the field is modulated on and off. Dramatic spatial variations in the time scales for orientational relaxation within individual droplets are observed. These effects are attributed to polymer/LC interfacial interactions and relaxation of the LC through a transient, metastable organizational state. © 2004 American Institute of Physics.
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42.79.Kr Display devices, liquid-crystal devices
61.30.Pq Microconfined liquid crystals: droplets, cylinders, randomly confined liquid crystals, polymer dispersed liquid crystals, and porous systems
61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order

Bulk metallic glass formation in the binary Cu–Zr system

D. Wang, Y. Li, B. B. Sun, M. L. Sui, K. Lu, and E. Ma

Appl. Phys. Lett. 84, 4029 (2004); http://dx.doi.org/10.1063/1.1751219 (3 pages) | Cited 182 times

Online Publication Date: 5 May 2004

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Using the Cu–Zr model system, we demonstrate that bulk amorphous alloys can be obtained by copper mold casting even in a binary metallic system. The narrow, off-eutectic, bulk-glass-forming range was found to require composition pinpointing to <1 at. %. A phase selection diagram is used to explain the success of our microstructure-based approach to pinpoint the best glass former in a given system. The implications of discovering simple binary bulk amorphous alloys are discussed, in terms of its impact on understanding the formation and physics of bulk metallic glasses. © 2004 American Institute of Physics.
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61.66.Dk Alloys
64.70.P- Glass transitions of specific systems
64.70.Q- Theory and modeling of the glass transition

Formation chemistry of high-density nanocraters on the surface of sapphire substrates with an in situ etching and growth mechanism of device-quality GaN films on the etched substrates

M. Hao, H. Ishikawa, and T. Egawa

Appl. Phys. Lett. 84, 4041 (2004); http://dx.doi.org/10.1063/1.1751607 (3 pages) | Cited 3 times

Online Publication Date: 5 May 2004

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An efficient method has been investigated to grow GaN films with sapphire substrates being treated in situ metalorganic chemical vapor deposition reactor for a special effect rather than simple thermal cleaning. First, a thin GaN layer is grown on the sapphire substrate. And then it is almost etched away by thermal decomposition. It is found that the decomposition of GaN induces the decomposition of sapphire resulting in the formation of high-density nanocraters on its surface. Finally the device-quality GaN film is regrown on the etched substrate with residual gallium droplets as nucleation sites. The chemistry of the etching process and the mechanism of the final GaN growth process have been discussed. The distinct feature of this method is the in situ formation of high-density nanocraters on the surface of the substrate. A rough interface between the substrate and GaN can improve the efficiency of the light-emitting diode built on it greatly. © 2004 American Institute of Physics.
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81.05.Ea III-V semiconductors
81.65.Cf Surface cleaning, etching, patterning
68.55.-a Thin film structure and morphology

Femtosecond-laser-activated fluorescence from silver oxide nanoparticles

T. Gleitsmann, B. Stegemann, and T. M. Bernhardt

Appl. Phys. Lett. 84, 4050 (2004); http://dx.doi.org/10.1063/1.1751613 (3 pages) | Cited 21 times

Online Publication Date: 5 May 2004

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A method for fast spatially resolved photoactivation of fluorescence from silver oxide nanoparticle films is presented. High activation rates are achieved through fast scanning of a focused high repetition rate 800 nm femtosecond laser with a peak power of 6.5 MW/cm2 over the sample. The activated areas of the thin films show fluorescence after subsequent excitation with an Ar+/Kr+ laser. The fluorescent properties were investigated by means of scanning laser microscopy at ambient conditions. Depending on excitation wavelengths (488 or 568 nm) strong fluorescence in the green or red domain was observed. The activation efficiencies were examined both as a function of exposure time and femtosecond laser power. Sensitivity, reliability and possible mechanisms for the photoactivation process are discussed. © 2004 American Institute of Physics.
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78.55.Hx Other solid inorganic materials
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
78.66.Nk Insulators

Thermophysical properties of a highly superheated and undercooled Ni–Si alloy melt

H. P. Wang, C. D. Cao, and B. Wei

Appl. Phys. Lett. 84, 4062 (2004); http://dx.doi.org/10.1063/1.1751618 (3 pages) | Cited 20 times

Online Publication Date: 5 May 2004

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The surface tension of superheated and undercooled liquid Ni–5 wt % Si alloy was measured by an electromagnetic oscillating drop method over a wide temperature range from 1417 to 1994 K. The maximum undercooling of 206 K (0.13 TL) was achieved. The surface tension of liquid Ni–5 wt % Si alloy is 1.697 N m−1 at the liquidus temperature 1623 K, and its temperature coefficient is −3.97×10−4 N m−1 K−1. On the basis of the experimental data of surface tension, the other thermophysical properties such as the viscosity, the solute diffusion coefficient, and the density of liquid Ni–5 wt % Si alloy were also derived. © 2004 American Institute of Physics.
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68.03.Cd Surface tension and related phenomena
66.20.-d Viscosity of liquids; diffusive momentum transport
66.10.C- Diffusion and thermal diffusion
61.25.Mv Liquid metals and alloys

Nonuniform twin-boundary motion in Ni–Mn–Ga single crystals

Miguel A. Marioni, Samuel M. Allen, and Robert C. O’Handley

Appl. Phys. Lett. 84, 4071 (2004); http://dx.doi.org/10.1063/1.1751621 (3 pages) | Cited 16 times

Online Publication Date: 5 May 2004

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The twin-boundary motion in Ni–Mn–Ga single crystals has been studied with 620 μs magnetic-field pulses on samples of 5 mm×5 mm cross section and 10 mm in length. A sequence of pulses applied on a single variant induces an extension. It is close to linear with the pulse’s peak generated driving forces, for peaks in excess of 0.68×Ku, where Ku ≃ 1.9×105 J/m3 is the magnetocrystalline anisotropy. The extension is caused by the motion of a few distinct twin boundaries, which exhibit differing driving-force thresholds for motion between 1.3 and 1.8×105 J/m3. Pulses applied without restoring the single-variant initial condition, cause discrete twin boundaries to expand in a stochastic manner consistent with the existence of obstacles to their motion. The number of obstacles is broadly distributed in pinning strengths, except for a peak near 0.56×Ku ≃ 1.06×105 J/m3. © 2004 American Institute of Physics.
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61.72.Mm Grain and twin boundaries
75.30.Gw Magnetic anisotropy
75.50.Cc Other ferromagnetic metals and alloys

Raman characterization of 0.4 nm single-wall carbon nanotubes using the full-symmetry line group

Z. M. Li, Z. K. Tang, G. G. Siu, and I. Bozovic

Appl. Phys. Lett. 84, 4101 (2004); http://dx.doi.org/10.1063/1.1753066 (3 pages) | Cited 15 times

Online Publication Date: 5 May 2004

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Raman spectra of single-wall carbon nanotubes produced in the channels of zeolite AFI single crystals have been analyzed in the light of the full symmetry group, the line group. The phonon dispersion curves of the tubes (5,0), (3,3), and (4,2) are calculated based on the lattice dynamical model and the phonon branches are assigned to their quantum numbers (irreducible representations). The structures of Raman spectra of different samples are reproduced well by the density of states of relevant Raman-active phonons. The result is useful to evaluate the contents of these tubes in real crystals where the contents are not well defined before. © 2004 American Institute of Physics.
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78.67.Ch Nanotubes
78.30.Hv Other nonmetallic inorganics
63.20.D- Phonon states and bands, normal modes, and phonon dispersion
61.46.-w Structure of nanoscale materials
63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials
73.22.-f Electronic structure of nanoscale materials and related systems
73.22.Lp Collective excitations

Thermal stability of epitaxial SrRuO3 films as a function of oxygen pressure

Ho Nyung Lee, Hans M. Christen, Matthew F. Chisholm, Christopher M. Rouleau, and Douglas H. Lowndes

Appl. Phys. Lett. 84, 4107 (2004); http://dx.doi.org/10.1063/1.1753650 (3 pages) | Cited 30 times

Online Publication Date: 5 May 2004

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The thermal stability of electrically conducting SrRuO3 thin films grown by pulsed-laser deposition on (001) SrTiO3 substrates has been investigated by atomic force microscopy and reflection high-energy electron diffraction (RHEED) under reducing conditions (25–800 °C in 10−7–10−2 Torr O2). The as-grown SrRuO3 epitaxial films exhibit atomically flat surfaces with single unit-cell steps, even after exposure to air at room temperature. The films remain stable at temperatures as high as 720 °C in moderate oxygen ambients (>1 mTorr), but higher temperature anneals at lower pressures result in the formation of islands and pits due to the decomposition of SrRuO3. Using in situ RHEED, a temperature and oxygen pressure stability map was determined, consistent with a thermally activated decomposition process having an activation energy of 88 kJ/mol. The results can be used to determine the proper conditions for growth of additional epitaxial oxide layers on high quality electrically conducting SrRuO3. © 2004 American Institute of Physics.
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68.60.Dv Thermal stability; thermal effects
68.55.-a Thin film structure and morphology
68.37.Ps Atomic force microscopy (AFM)
68.35.B- Structure of clean surfaces (and surface reconstruction)
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)
81.15.Fg Pulsed laser ablation deposition
73.61.Ng Insulators
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