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24 May 2004

Volume 84, Issue 21, pp. 4141-4340

Issue Cover Spotlight Figure

Appl. Phys. Lett. 84, 4316 (2004); http://dx.doi.org/10.1063/1.1756684 (3 pages)

Seok Pil Jang and Stephen U. S. Choi
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Nonlinear microwave properties of ferroelectric thin films

R. Ott, P. Lahl, and R. Wördenweber

Appl. Phys. Lett. 84, 4147 (2004); http://dx.doi.org/10.1063/1.1751223 (3 pages) | Cited 12 times

Online Publication Date: 6 May 2004

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The nonlinear microwave properties of ferroelectric SrTiO3 thin films are characterized via complex analysis of the intermodulation distortion (IMD) signals up to high microwave power. The measurements reveal an unusual dependence of the IMD signals on the input power, which indicates the presence of two different nonlinear properties being responsible for the generation of IMD, i.e., the nonlinear permittivity and conductivity at low and high rf power levels, respectively. The IMD signal strength cannot be explained in terms of the classical description based on a Taylor expansion of the nonlinear parameter. In contrast, simulations of the frequency spectra using more appropriate descriptions of two nonlinear parameters yield an excellent agreement between theory and experiment, and, thus, demonstrate that the IMD experiments together with the simulation might provide further insight into the mechanism of nonlinear behavior of these materials. © 2004 American Institute of Physics.
Show PACS
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ch Permittivity (dielectric function)
73.61.Ng Insulators
78.70.Gq Microwave and radio-frequency interactions

Reduced dielectric dispersion in ferroelectric (Pb,La)TiO3/(Pb,Ca)TiO3 thin-film multilayer heterostructures due to a mechanical stress relaxation mechanism

Rosalía Poyato, M. Lourdes Calzada, and Lorena Pardo

Appl. Phys. Lett. 84, 4161 (2004); http://dx.doi.org/10.1063/1.1755422 (3 pages) | Cited 7 times

Online Publication Date: 6 May 2004

Full Text: Read Online (HTML) | Download PDF

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The dielectric dispersion of (Pb,Ca)TiO3/(Pb,La)TiO3/(Pb,Ca)TiO3 and (Pb,La)TiO3/(Pb,Ca)TiO3/(Pb,La)TiO3 ferroelectric thin-film multilayer heterostructures onto Si-based substrates has been studied and compared with that of identically prepared (Pb,La)TiO3 and (Pb,Ca)TiO3 films. Grazing incidence x-ray diffraction analysis reveals that the tetragonal distortion of the heterostructures is higher than the ones for the single-component films, which evidences a mechanical stress relaxation mechanism in the heterostructures. A lower dielectric dispersion has been obtained in the heterostructures with respect to the single-component films. This is also a consequence of the stress relaxation by plastic deformation through vacancy diffusion present in the former. Vacancy diffusion decreases the number of VPbVO defect-dipoles, which could contribute to the dielectric permittivity at low frequencies in the heterostructures. © 2004 American Institute of Physics.
Show PACS
77.22.Ch Permittivity (dielectric function)
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances
62.20.F- Deformation and plasticity
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