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31 May 2004

Volume 84, Issue 22, pp. 4361-4576

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Appl. Phys. Lett. 84, 4409 (2004); http://dx.doi.org/10.1063/1.1757648 (3 pages)

Azita Soleymani, Piroz Zamankhan, and William Polashenski
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Electrostatic micromembrane actuator arrays as motion generator

X. T. Wu, J. Hui, M. Young, P. Kayatta, J. Wong, D. Kennith, J. Zhe, and C. Warde

Appl. Phys. Lett. 84, 4418 (2004); http://dx.doi.org/10.1063/1.1758299 (3 pages) | Cited 2 times

Online Publication Date: 12 May 2004

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A rigid-body motion generator based on an array of micromembrane actuators is described. Unlike previous microelectromechanical systems (MEMS) techniques, the architecture employs a large number (typically greater than 1000) of micron-sized (10–200 μm) membrane actuators to simultaneously generate the displacement of a large rigid body, such as a conventional optical mirror. For optical applications, the approach provides optical design freedom of MEMS mirrors by enabling large-aperture mirrors to be driven electrostatically by MEMS actuators. The micromembrane actuator arrays have been built using a stacked architecture similar to that employed in the Multiuser MEMS Process (MUMPS), and the motion transfer from the arrayed micron-sized actuators to macro-sized components was demonstrated. © 2004 American Institute of Physics.
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85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
42.79.Bh Lenses, prisms and mirrors
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.35.Np Adhesion
81.20.Vj Joining; welding

Organic field-effect transistors with nonlithographically defined submicrometer channel length

Susanne Scheinert, Theodor Doll, Axel Scherer, Gernot Paasch, and Ingo Hörselmann

Appl. Phys. Lett. 84, 4427 (2004); http://dx.doi.org/10.1063/1.1758775 (3 pages) | Cited 22 times

Online Publication Date: 12 May 2004

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We developed an underetching technique to define submicrometer channel length polymer field-effect transistors. Short-channel effects are avoided by using thin silicon dioxide as gate insulator. The transistors with 1 and 0.74 μm channel length operate at a voltage as low as 5 V with a low inverse subthreshold slope of 0.4–0.5 V/dec, on–off ratio of 104, and without short-channel effects. The poly(3-alcylthiophene)’s still suffer from a low mobility and hysteresis does occur, but it is negligible for the drain voltage variation. With our underetching technique also device structures with self-aligned buried gate and channel length below 0.4 μm are fabricated on polymer substrates. © 2004 American Institute of Physics.
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85.30.Tv Field effect devices
85.65.+h Molecular electronic devices

White organic light-emitting devices using 2,5,2′,5′-tetrakis(4′-biphenylenevinyl)-biphenyl as blue light-emitting layer

Gang Cheng, Yi Zhao, Yingfang Zhang, Shiyong Liu, Feng He, Haiquan Zhang, and Yuguang Ma

Appl. Phys. Lett. 84, 4457 (2004); http://dx.doi.org/10.1063/1.1738179 (3 pages) | Cited 26 times

Online Publication Date: 14 May 2004

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White organic light-emitting devices (OLEDs) have been fabricated using a trimeric phenylenvinylene derivative, 2,5,2′,5′-tetrakis(4′-biphenylenevinyl)-biphenyl (TBVB), as blue light-emitting layer. The structure of devices is simple, in which tris(8-hydroxyquinoline) aluminum (Alq), N,N′-diphenyl-N,N′-bis(1-naphthyl)-(1,1′-biphenyl)-4,4′-diamine, TBVB, and an ultrathin layer of 5,6,11,12-tetraphenylnaphthacene (rubrene), which is inserted between Alq and TBVB layers, are used as electron-transporting, hole-transporting, blue, and yellow light-emitting layers, respectively. A fairly pure white OLED with Commission Internationale De L’Eclairage coordinates of (0.33,0.34) at 4000 cd/m2 is realized when the thickness of TBVB is 10 nm and that of rubrene is 0.15 nm. The maximum luminance and efficiency of this device are 4025 cd/m2 and 3.2 cd/A, respectively. © 2004 American Institute of Physics.
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85.60.Jb Light-emitting devices
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
78.55.Kz Solid organic materials
78.60.Fi Electroluminescence

High-quality radio-frequency inductors on silicon using a hybrid ferrite technology

M. Saidani and M. A. M. Gijs

Appl. Phys. Lett. 84, 4496 (2004); http://dx.doi.org/10.1063/1.1756677 (3 pages) | Cited 10 times

Online Publication Date: 14 May 2004

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We have realized millimeter-size rf inductors on silicon using a polyimide mold–copper electroplating coil technology. Subsequently, the coils are assembled with magnetic cover plates of commercially available bulk Ni–Zn ferrites of high resistivity. Using the magnetic flux-amplifying ferrite plates, we obtain a 40% enhancement of the inductance and a 25% enhancement of the quality factor (Q = 10–20) for frequencies up to 0.2 GHz. Our results indicate the large potential of using bulk ferrites for rf applications in a hybrid inductor assembly process. © 2004 American Institute of Physics.
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84.32.Hh Inductors and coils; wiring

GaInN light-emitting diodes with RuO2/SiO2/Ag omni-directional reflector

Jong Kyu Kim, Thomas Gessmann, Hong Luo, and E. Fred Schubert

Appl. Phys. Lett. 84, 4508 (2004); http://dx.doi.org/10.1063/1.1757634 (3 pages) | Cited 42 times

Online Publication Date: 14 May 2004

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A GaInN light-emitting diode (LED) employing an omni-directional reflector (ODR) is presented. The ODR consists of a RuO2 ohmic contact to p-type GaN, a quarter-wave thick SiO2 low-index layer perforated by an array of micro-contacts, and an Ag layer. Calculations predict a 98% angle-averaged reflectivity at λ = 450 nm for an GaN/SiO2/Ag ODR, much higher than that for a 20 period Al0.25Ga0.75N/GaN distributed Bragg reflector (49%) and an Ag reflector (94%). It is shown that the RuO2/SiO2/Ag ODR has higher reflectivity than Ni/Au and even Ag reflectors, leading to a higher light extraction efficiency of GaInN LEDs with ODR. The electrical properties of the ODR-LED are comparable to those LEDs with a conventional Ni/Au contact. © 2004 American Institute of Physics.
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85.60.Jb Light-emitting devices
42.82.Gw Other integrated-optical elements and systems
73.40.Ns Metal-nonmetal contacts

Spin flop switching for magnetic random access memory

D. C. Worledge

Appl. Phys. Lett. 84, 4559 (2004); http://dx.doi.org/10.1063/1.1759376 (3 pages) | Cited 74 times

Online Publication Date: 14 May 2004

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By replacing the traditional single magnetic free layer in magnetic random access memory (MRAM) with a free layer composed of two antiferromagnetically coupled layers which switch by spin flop switching, the half select and activation energy problems that have hindered progress in MRAM to date can be essentially eliminated. By analytically and numerically solving a single domain model, the theory of spin flop switching for MRAM is developed here, including a discussion of the various types of easy axis hysteresis loops, the critical switching curve as a function of word and bit line fields, the role of thickness asymmetry, and the dependence of activation energy on applied field. The theory is developed for arbitrary thickness, length, width, magnetization, intrinsic anisotropy, and exchange coupling. Exact analytic formulas are given for the relevant switching fields and the activation energy. In particular, it is shown that the field required to switch the bit under half select can be many times larger than the field required for full select, and furthermore that the activation energy initially increases under application of a half select field. © 2004 American Institute of Physics.
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85.70.Li Other magnetic recording and storage devices (including tapes, disks, and drums)
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
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