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31 May 2004

Volume 84, Issue 22, pp. 4361-4576

Issue Cover Spotlight Figure

Appl. Phys. Lett. 84, 4409 (2004); http://dx.doi.org/10.1063/1.1757648 (3 pages)

Azita Soleymani, Piroz Zamankhan, and William Polashenski
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Opposite effects of NO2 on electrical injection in porous silicon gas sensors

Zeno Gaburro, Claudio J. Oton, Lorenzo Pavesi, and Lucio Pancheri

Appl. Phys. Lett. 84, 4388 (2004); http://dx.doi.org/10.1063/1.1757025 (3 pages) | Cited 12 times

Online Publication Date: 12 May 2004

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The electrical conductance of porous silicon fabricated with heavily doped p-type silicon is very sensitive to NO2. We show that the sign of the injection variations depends on the porous layer thickness. If the thickness is sufficiently low—of the order of few μm—the injection decreases instead of increasing. We discuss the effect in terms of an already proposed twofold action of NO2, according to which the free carrier density increases, and simultaneously the energy bands are bent at the porous silicon surface. © 2004 American Institute of Physics.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
72.80.Cw Elemental semiconductors
72.80.Ng Disordered solids
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
61.43.Dq Amorphous semiconductors, metals, and alloys
71.20.Mq Elemental semiconductors

Negative bias-temperature instabilities in metal–oxide–silicon devices with SiO2 and SiOxNy/HfO2 gate dielectrics

X. J. Zhou, L. Tsetseris, S. N. Rashkeev, D. M. Fleetwood, R. D. Schrimpf, S. T. Pantelides, J. A. Felix, E. P. Gusev, and C. D’Emic

Appl. Phys. Lett. 84, 4394 (2004); http://dx.doi.org/10.1063/1.1757636 (3 pages) | Cited 14 times

Online Publication Date: 12 May 2004

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Negative bias-temperature instability (NBTI) in metal–oxide–semiconductor capacitors with SiOxNy/HfO2 gate dielectrics is compared to those with thermal SiO2 oxides. Activation energies for interface and oxide-trap charge densities for each device type, estimated from capacitance–voltage measurements versus temperature and electric field, lie in the range 0.2–0.4 eV. This suggests that the release of hydrogen from, e.g., oxide protrusions in Si, followed by the lateral motion of protons along the interface (activation energy ∼0.3 eV), may play a key role in NBTI. Passivation reactions between protons and Si–H can create interface traps, and proton capture by sub-oxide bonds (O vacancies) can lead to positive trapped-oxide charge. © 2004 American Institute of Physics.
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84.32.Tt Capacitors
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
81.65.Rv Passivation

Degenerate layers in epitaxial ZnO films grown on sapphire substrates

H. Tampo, A. Yamada, P. Fons, H. Shibata, K. Matsubara, K. Iwata, S. Niki, K. Nakahara, and H. Takasu

Appl. Phys. Lett. 84, 4412 (2004); http://dx.doi.org/10.1063/1.1758295 (3 pages) | Cited 29 times

Online Publication Date: 12 May 2004

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ZnO films were grown on low-temperature (LT) buffer layers on sapphire a-plane (11–20) substrates by radical source molecular-beam epitaxy. The LT buffer layers were found to effect the electrical properties of subsequently grown undoped ZnO films, and their presence was found to be indispensable for the growth of films with low carrier concentrations and high mobilities. Temperature-dependent Hall measurements showed the existence of a degenerate region related to the LT buffer layers. It was found that the effects of degenerate layers could be reduced by using annealing treatments and nitrogen doping of the LT buffer layers. The dominant residual donor energy of 110 meV was found to be different than previously reported. The carrier concentration of a ZnO film fabricated using a nitrogen-doped buffer layer was 7.5×1016 cm−3 with a mobility of 132 cm2/V s at room temperature. © 2004 American Institute of Physics.
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81.05.Dz II-VI semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.61.Ga II-VI semiconductors
73.50.Dn Low-field transport and mobility; piezoresistance
72.20.Fr Low-field transport and mobility; piezoresistance
72.20.My Galvanomagnetic and other magnetotransport effects
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
68.55.A- Nucleation and growth
61.72.Cc Kinetics of defect formation and annealing

High-mobility thin InSb films grown by molecular beam epitaxy

T. Zhang, S. K. Clowes, M. Debnath, A. Bennett, C. Roberts, J. J. Harris, R. A. Stradling, L. F. Cohen, T. Lyford, and P. F. Fewster

Appl. Phys. Lett. 84, 4463 (2004); http://dx.doi.org/10.1063/1.1748850 (3 pages) | Cited 23 times

Online Publication Date: 14 May 2004

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The problem of preparing high-mobility thin InSb films is revisited for magnetoresistive and spintronic sensor applications. We introduce a growth process that significantly improves the electrical properties of thin unintentionally doped InSb layers (60–300 nm) epitaxially grown on GaAs(100) substrates by reducing the density of dislocations within the interfacial layer. The epilayer properties are well described by a differential two-layer model. This model confirms that the contribution of the interface can only be donor-like. Moreover, the electrical properties of the InSb layers change continuously away from the interface up to sample thickness of the order of 1 μm. © 2004 American Institute of Physics.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology
72.20.My Galvanomagnetic and other magnetotransport effects
73.61.Ey III-V semiconductors

Temperature-dependent emptying of grain-boundary charge traps in chemical vapor deposited diamond

S. M. Hearne, D. N. Jamieson, E. Trajkov, S. Prawer, and J. E. Butler

Appl. Phys. Lett. 84, 4493 (2004); http://dx.doi.org/10.1063/1.1756201 (3 pages) | Cited 9 times

Online Publication Date: 14 May 2004

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We have used the technique of ion beam induced charge with a 2 MeV He+ microprobe to image particle detectors fabricated from polycrystalline chemical vapor deposited diamond as a function of temperature. We find that detectors which display a thermally stimulated current peak at 190 °C display increased charge collection efficiency when heated above that temperature. The probability of detecting the impact of a single ion at room temperature was less than 2%, but this probability rises to over 80% at 170 °C. We model this effect by showing that charge trapped at grain boundaries is liberated at elevated temperatures and this results in an increased electric field within the detector volume and hence a raised charge collection efficiency. © 2004 American Institute of Physics.
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81.05.U- Carbon/carbon-based materials
29.40.Wk Solid-state detectors

Probing local coordination environments in high-k materials for gate stack applications

D. W. McComb, A. J. Craven, D. A. Hamilton, and M. MacKenzie

Appl. Phys. Lett. 84, 4523 (2004); http://dx.doi.org/10.1063/1.1758303 (3 pages) | Cited 9 times

Online Publication Date: 14 May 2004

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Using electron energy-loss spectroscopy, the oxygen K-edge excitation in a range of crystalline standards relevant to candidate high-k materials has been examined. The spectra have been modeled using electronic structure calculations in order to understand the influence of the local coordination environment on the data. The knowledge obtained is used to probe the local atomic structure in thin amorphous films of “HfSiO.” © 2004 American Institute of Physics.
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77.55.-g Dielectric thin films
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
68.55.-a Thin film structure and morphology
79.20.Uv Electron energy loss spectroscopy

Paramagnetic NO2 centers in thin γ-irradiated HfO2 layers on (100)Si revealed by electron spin resonance

A. Stesmans, V. V. Afanas’ev, F. Chen, and S. A. Campbell

Appl. Phys. Lett. 84, 4574 (2004); http://dx.doi.org/10.1063/1.1695435 (3 pages) | Cited 7 times

Online Publication Date: 14 May 2004

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Electron spin resonance (ESR) analysis reveals the incorporation of N in (100)Si/HfO2 structures with ultrathin amorphous HfO2 films deposited by chemical vapor deposition (CVD) using Hf(NO3)4 as precursor, through detection, after 60Co γ-irradiation, of NO2 radicals (density ≳55 at. ppm). The molecules are found to be stabilized and likely homogeneously distributed in the HfO2 network. Some network forming N entity is suggested as a precursor, transformed into ESR-active NO2 upon γ-irradiation. The interesting N incorporation aspect appears inherent to the particular CVD process. © 2004 American Institute of Physics.
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77.55.-g Dielectric thin films
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
61.80.Ed γ-ray effects
76.30.Rn Free radicals
61.43.-j Disordered solids
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