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Applied Physics Letters / Volume 84 / Issue 23 / NANOSCALE SCIENCE AND DESIGN

Appl. Phys. Lett. 84, 4681 (2004); http://dx.doi.org/10.1063/1.1760219 (3 pages)

Persistence of (In,Ga)As quantum-dot chains under index deviation from GaAs(100)

Z. M. Wang1, Yu. I. Mazur1, G. J. Salamo1, P. M. Lytvin2, V. V. Strelchuk2, and M. Ya. Valakh2

1Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701
2Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Prospect Nauky 45, 03028 Kyiv, Ukraine

(Received 17 February 2004; accepted 14 April 2004; published online 19 May 2004)

Utilizing the naturally curved surface contours provided by oval defects on a GaAs(100) surface, we demonstrate that alignment of quantum-dot chains formed during the growth of (In,Ga)As multilayers is unyielding to a modest deviation of surface orientation from (100) of about 0.7° along [01-1] and 8° along [011]. This finding suggests that the strain-driven kinetic anisotropy responsible for the formation of the quantum dot chains dominates over selective island formation at steps due to surface misorientation. The robustness of the quantum dot chain adds to its potential for its future application. © 2004 American Institute of Physics.

© 2004 American Institute of Physics

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KEYWORDS and PACS

Keywords

indium compounds, gallium arsenide, III-V semiconductors, semiconductor quantum dots, multilayers, molecular beam epitaxial growth, semiconductor growth, surface morphology, atomic force microscopy

PACS

  • 81.07.Ta

    Quantum dots

  • 68.65.Hb

    Quantum dots (patterned in quantum wells)

  • 68.35.B-

    Structure of clean surfaces (and surface reconstruction)

  • 68.65.Ac

    Multilayers

  • 81.15.Hi

    Molecular, atomic, ion, and chemical beam epitaxy

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.1760219

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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    T. Mano, R. Nötzel, G. J. Hamhuis, T. J. Eijkemans, and J. H. Wolter, Appl. Phys. Lett. 81, 1705 (2002)APPLAB000081000009001705000001.

    Z. M. Wang, K. Holmes, Yu. I. Mazur, and G. J. Salamo, Appl. Phys. Lett. 84, 1931 (2004)APPLAB000084000011001931000001.

    M. D. Johnson, C. Orme, A. W. Hunt, D. Graff, J. Graff, J. Sudijono, L. M. Sander, and B. G. Orr, Phys. Rev. Lett. 72, 116 (1994).

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    Z. M. Wang, J. L. Shultz, and G. J. Salamo, Appl. Phys. Lett. 83, 1749 (2003)APPLAB000083000009001749000001.

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