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7 Jun 2004

Volume 84, Issue 23, pp. 4599-4816

Issue Cover Spotlight Figure

Appl. Phys. Lett. 84, 4650 (2004); http://dx.doi.org/10.1063/1.1759390 (3 pages)

David I. Woodward, Ian M. Reaney, Gaiying Y. Yang, Elizabeth C. Dickey, and Clive A. Randall
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Polymer field-effect transistors by a drawing method

Shuichi Nagamatsu, Wataru Takashima, Keiichi Kaneto, Yuji Yoshida, Nobutaka Tanigaki, and Kiyoshi Yase

Appl. Phys. Lett. 84, 4608 (2004); http://dx.doi.org/10.1063/1.1751222 (3 pages) | Cited 20 times

Online Publication Date: 19 May 2004

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We demonstrated the polymer field-effect transistors (FETs) utilizing regioregular poly(3-alkylthiophene)s (P3AT) films prepared by a drawing method. The P3AT film exhibited large optical dichroic ratio, which originated in the polymer backbones aligned to the drawing direction. In-plane anisotropy and enhancement of FET characteristics have been observed that are caused by molecular alignment. In the case of poly(3-dodecylthiophene), the hole mobility along the drawing direction was enhanced by a factor of 25 compared with that of spin-coated film. © 2004 American Institute of Physics.
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85.30.Tv Field effect devices
73.50.Dn Low-field transport and mobility; piezoresistance
73.61.Ph Polymers; organic compounds

Electromechanical coupling coefficient for surface acoustic waves in single-crystal bulk aluminum nitride

G. Bu, D. Ciplys, M. Shur, L. J. Schowalter, S. Schujman, and R. Gaska

Appl. Phys. Lett. 84, 4611 (2004); http://dx.doi.org/10.1063/1.1755843 (3 pages) | Cited 20 times

Online Publication Date: 19 May 2004

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The electromechanical coupling coefficient K2 for surface acoustic waves propagating on c and a surfaces of bulk AlN single crystals has been measured using the S11-parameter method in the frequency range of 160–360 MHz. The extracted values of K2 are 0.11% and 0.47% for the c and a surfaces, respectively. By fitting our experimental data to our numerical simulation results, we have estimated piezoelectric constants, which are in a reasonable agreement with literature data. Our results are consistent with the negative sign of the e15 constant. © 2004 American Institute of Physics.
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68.35.Iv Acoustical properties
77.65.Dq Acoustoelectric effects and surface acoustic waves (SAW) in piezoelectrics
68.47.Fg Semiconductor surfaces

Transparent conducting metal electrode for top emission organic light-emitting devices: Ca–Ag double layer

R. B. Pode, C. J. Lee, D. G. Moon, and J. I. Han

Appl. Phys. Lett. 84, 4614 (2004); http://dx.doi.org/10.1063/1.1756674 (3 pages) | Cited 64 times

Online Publication Date: 19 May 2004

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We have fabricated a transparent conducting double-layer metal electrode for top emission organic light-emitting devices which consists of thin layers of Ca and Ag metals of different thicknesses, deposited by the vacuum evaporation technique. The process is clean and does not damage the underlaying organic layers. High optical transparency over 70%, low reflectivity (14%) in the visible region, and low electrical sheet resistance (12 ohms/square) in Ca(10 nm)–Ag(10 nm) structures are reported. This transparent conducting Ca–Ag metal electrode opens a practical way to fabricate top-emitting organic displays without generating damage-induced states. © 2004 American Institute of Physics.
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81.05.Bx Metals, semimetals, and alloys
42.79.Kr Display devices, liquid-crystal devices
85.60.Pg Display systems
68.55.A- Nucleation and growth
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.40.Kc Metals, semimetals, and alloys
78.66.Bz Metals and metallic alloys
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
72.15.Eb Electrical and thermal conduction in crystalline metals and alloys
73.61.At Metal and metallic alloys

Optically switched conductivity of epitaxial diamond on nitrogen doped diamond substrates

M. W. Geis, K. E. Krohn, J. M. Lawless, S. J. Deneault, M. F. Marchant, J. C. Twichell, T. M. Lyszczarz, J. E. Butler, D. D. Flechtner, and R. Wright

Appl. Phys. Lett. 84, 4620 (2004); http://dx.doi.org/10.1063/1.1757637 (3 pages) | Cited 1 time

Online Publication Date: 19 May 2004

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Epitaxial diamond with remarkably low p-type doping (1×1014–1×1017 cm−3) and exceptionally low compensation ∼ 1×1013 cm−3, has enabled the demonstration of a optically-switched conduction modulation of the epitaxial layer. Charge exchange between the diamond substrate and the epitaxial layer makes it possible to modulate the conductivity of the epitaxial layer. Incandescent light will make the lightly p-doped epitaxial layer insulating and ultraviolet radiation will make the layer conductive again. Once the layer conductivity has been established it will remain in the same electrical state for days, if kept in the dark. © 2004 American Institute of Physics.
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78.66.Db Elemental semiconductors and insulators
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
61.72.up Other materials
73.61.Cw Elemental semiconductors

Characterization of breakdown in ultrathin oxides by hot carrier emission

J. C. Tsang and B. P. Linder

Appl. Phys. Lett. 84, 4641 (2004); http://dx.doi.org/10.1063/1.1759383 (3 pages) | Cited 4 times

Online Publication Date: 19 May 2004

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Hot carrier luminescence excited at low voltages across ultrathin gate oxides is used to describe the localized transport during progressive oxide breakdown. The emission identifies the locations of initial breakdown spots in field effect transistors. The transitions from stress-induced leakage currents to reversible breakdown to final breakdown are accompanied by changes in the efficiency of the emission showing an evolution from inelastic to elastic transport. © 2004 American Institute of Physics.
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77.55.-g Dielectric thin films
77.22.Jp Dielectric breakdown and space-charge effects
85.30.Tv Field effect devices

NbO as gate electrode for n-channel metal-oxide-semiconductor field-effect-transistors

W. Gao, J. F. Conley, and Y. Ono

Appl. Phys. Lett. 84, 4666 (2004); http://dx.doi.org/10.1063/1.1759780 (3 pages) | Cited 1 time

Online Publication Date: 19 May 2004

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Niobium mono-oxide (NbO) is investigated as a potential candidate for gate electrode to replace poly-silicon gate in metal-oxide-semiconductor field-effect transistors. NbO was found to have a work function of 4.18±0.05 eV on SiO2 and to be stable up to 1000 °C with SiO2 and HfO2 gate dielectrics. The low work function and high stability make NbO suitable for n-channel metal-oxide-semiconductor field-effect transistors devices. The method of deposition is critical during the fabrication to minimize the incorporation of Nb, NbO2, and Nb2O5 which are detrimental to the stability and conductivity of the gate electrode and extra care is needed to avoid further oxidation of NbO. © 2004 American Institute of Physics.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.61.Ng Insulators
81.15.Cd Deposition by sputtering
85.30.Tv Field effect devices
68.55.A- Nucleation and growth

The influence of the annealing sequence on p+/n junctions observed by scanning capacitance microscopy

M. N. Chang, C. Y. Chen, W. W. Wan, and J. H. Liang

Appl. Phys. Lett. 84, 4705 (2004); http://dx.doi.org/10.1063/1.1762692 (3 pages) | Cited 4 times

Online Publication Date: 19 May 2004

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This letter reports on the investigation of p+–n junction variation produced by various annealing sequences. With well-controlled photoperturbation, we have employed scanning capacitance microscopy to directly observe the junction narrowing induced by post-spike furnace annealing. For p+–n junctions, it is revealed that post-spike furnace annealing may degrade the electrical activation of boron atoms, leading to junction narrowing without significant boron diffusion. The mechanism and the stability of electrical junctions formed by spike annealing are also discussed. The experimental results also clearly show that furnace annealing followed by spike annealing can result in junction broadening with a more concentrated boron profile. © 2004 American Institute of Physics.
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81.40.Gh Other heat and thermomechanical treatments
66.30.H- Self-diffusion and ionic conduction in nonmetals

High-speed and high-current density C60 diodes

Liping Ma, Jianyong Ouyang, and Yang Yang

Appl. Phys. Lett. 84, 4786 (2004); http://dx.doi.org/10.1063/1.1760225 (3 pages) | Cited 24 times

Online Publication Date: 21 May 2004

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A high-performance organic diode is demonstrated by using C60 sandwiched between a cathode and an anode using metals with different diffusivity and donor ability. In this letter, copper (Cu) and aluminum (Al) are selected as the cathode and anode, respectively. C60 is used as the organic electron-acceptor for its high stability and high carrier mobility. The as-prepared diode shows poor performance. However, after heat treatment, the Cu/C60 interface becomes an Ohmic contact through Cu diffusion and charge-transfer processes, allowing highly efficient electron injection from the Cu electrode. On the other hand, a rectified C60/Al contact is formed, prohibiting efficient electron injection from the Al electrode into C60. Hence, a high-performance organic diode is formed through a heat treatment process, not by the selection of metals with different work functions. Due to the high mobility of C60, the device shows megahertz frequency response, and it can also handle rather high current density (363 A/cm2 at 2.4 V). This opens the way for the formation of high-performance organic electronic devices. © 2004 American Institute of Physics.
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85.65.+h Molecular electronic devices
85.30.Kk Junction diodes
72.20.Fr Low-field transport and mobility; piezoresistance
73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Ns Metal-nonmetal contacts

Type-II GaAsSb/InP heterojunction bipolar light-emitting transistor

M. Feng, N. Holonyak, B. Chu-Kung, G. Walter, and R. Chan

Appl. Phys. Lett. 84, 4792 (2004); http://dx.doi.org/10.1063/1.1760595 (3 pages) | Cited 10 times

Online Publication Date: 21 May 2004

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We report radiative recombination in the base layer of Type-II InP/GaAsSb/InP double heterojunction bipolar light-emitting transistors (HBLET) operating in the common-emitter configuration. The typical current gain, β, for a 120×120 μm2 emitter area of the HBLET is 38. The optical emission wavelength from a 30 nm GaAs0.51Sb0.49 base is centered at λpeak = 1600 nm. Three-port operation of the Type-II HBLET with simultaneously an amplified electrical output and an optical output with signal modulation is demonstrated at 10 kHz. © 2004 American Institute of Physics.
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85.60.Jb Light-emitting devices
85.30.Pq Bipolar transistors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
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