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7 Jun 2004

Volume 84, Issue 23, pp. 4599-4816

Appl. Phys. Lett. 84, 4650 (2004); http://dx.doi.org/10.1063/1.1759390 (3 pages)

David I. Woodward, Ian M. Reaney, Gaiying Y. Yang, Elizabeth C. Dickey, and Clive A. Randall

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Erratum: “Structure of stacking faults formed during the forward bias of 4H-SiC p-i-n diodes” [Appl. Phys. Lett. 82, 2410 (2003)]

M. E. Twigg, R. E. Stahlbush, M. Fatemi, S. D. Arthur, J. B. Fedison, J. E. Tucker, and S. Wang

Appl. Phys. Lett. 84, 4816 (2004); http://dx.doi.org/10.1063/1.1763232 (1 page) | Cited 1 time

Online Publication Date: 21 May 2004

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99.10.Cd	Errata
85.30.Kk	Junction diodes
61.72.Nn	Stacking faults and other planar or extended defects

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