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7 Jun 2004

Volume 84, Issue 23, pp. 4599-4816

Issue Cover Spotlight Figure

Appl. Phys. Lett. 84, 4650 (2004); http://dx.doi.org/10.1063/1.1759390 (3 pages)

David I. Woodward, Ian M. Reaney, Gaiying Y. Yang, Elizabeth C. Dickey, and Clive A. Randall
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Optical nonlinearity of monodispersed, capped ZnS quantum particles

V. V. Nikesh, Aditya Dharmadhikari, Hiroshi Ono, Shinji Nozaki, G. Ravindra Kumar, and Shailaja Mahamuni

Appl. Phys. Lett. 84, 4602 (2004); http://dx.doi.org/10.1063/1.1748840 (3 pages) | Cited 15 times

Online Publication Date: 19 May 2004

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ZnS quantum dots are synthesized by a high-temperature chemical route with narrow size distribution at diameters of 1.4 and 1.8 nm. Significantly small size dispersion of 1.4-nm-sized ZnS quantum dots is vivid from the transmission electron microscopic measurements. The nonlinear absorption is measured at wavelengths 532 and 520 nm using a picosecond laser in an open aperture z-scan setup. The measured two-photon absorption coefficients are 0.08 and 0.2 cm/GW for smaller and larger nanoparticles. Two photon absorption cross sections for nanoparticles are about six orders of magnitude larger than bulk ZnS. © 2004 American Institute of Physics.
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81.05.Dz II-VI semiconductors
81.07.Bc Nanocrystalline materials
81.07.Ta Quantum dots
78.67.Hc Quantum dots
68.37.Lp Transmission electron microscopy (TEM)
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters

Excited-state spectroscopy on a nearly closed quantum dot via charge detection

J. M. Elzerman, R. Hanson, L. H. Willems van Beveren, L. M. K. Vandersypen, and L. P. Kouwenhoven

Appl. Phys. Lett. 84, 4617 (2004); http://dx.doi.org/10.1063/1.1757023 (3 pages) | Cited 10 times

Online Publication Date: 19 May 2004

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We demonstrate a method for measuring the discrete energy spectrum of a quantum dot connected very weakly to a single lead. A train of voltage pulses applied to a metal gate induces tunneling of electrons between the quantum dot and a reservoir. The effective tunnel rate depends on the number and nature of the energy levels in the dot made accessible by the pulse. Measurement of the charge dynamics thus reveals the energy spectrum of the dot, as demonstrated for a dot in the few-electron regime. © 2004 American Institute of Physics.
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73.21.La Quantum dots
73.40.Gk Tunneling

Specific heat of single-walled boron nitride nanotubes

Y. Xiao, X. H. Yan, J. Xiang, Y. L. Mao, Y. Zhang, J. X. Cao, and J. W. Ding

Appl. Phys. Lett. 84, 4626 (2004); http://dx.doi.org/10.1063/1.1759061 (3 pages) | Cited 14 times

Online Publication Date: 19 May 2004

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Based on a force constant model, we have calculated the phonon spectrum and specific heat of single-walled boron nitride nanotubes. Compared with carbon nanotubes, boron nitride nanotubes have a larger specific heat. The fitting formulas for diameter and chirality dependence of specific heat at 300 K are given. © 2004 American Institute of Physics.
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81.07.De Nanotubes
65.80.-g Thermal properties of small particles, nanocrystals, nanotubes, and other related systems

Silicon nanopillars for mechanical single-electron transport

Dominik V. Scheible and Robert H. Blick

Appl. Phys. Lett. 84, 4632 (2004); http://dx.doi.org/10.1063/1.1759371 (3 pages) | Cited 50 times

Online Publication Date: 19 May 2004

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Nanomechanical systems have been shown to accurately regulate the flow of electric current. We present the concept and demonstrate experimental operation of a vertical electromechanical single-electron transistor. The device is fabricated from silicon forming a nanopillar situated between source and drain contacts. The advantage of this concept is its straightforward manufacturing, which only includes two processing steps: Electron-beam lithography and reactive ion etching. The device operates at room temperature and at frequencies in the range of 350–400 MHz. A theoretical model of the operation of this device is given, explaining qualitatively the obtained experimental data. © 2004 American Institute of Physics.
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85.35.Gv Single electron devices
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices

Guided self-assembly of metallic nanowires and channels

B. Erdem Alaca, Huseyin Sehitoglu, and Taher Saif

Appl. Phys. Lett. 84, 4669 (2004); http://dx.doi.org/10.1063/1.1759781 (3 pages) | Cited 25 times

Online Publication Date: 19 May 2004

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A method is presented to form metallic nanowires and nanochannels by guided self-assembly. The method relies on an initial plasma-enhanced chemical vapor deposition of a silicon oxide film with altered chemistry on a silicon wafer, and the cracking of the film due to tensile stresses upon annealing. The fabricated stress concentration features on the Si substrate control the number of cracks and their orientation. These cracks are then filled with electroless nickel, and the subsequent removal of SiO2 produces a controlled network of nanowires of about 100 nm in dimension. In addition to nanowires, nanobridges, and nanocantilevers have also been fabricated by releasing the wires, confirming that the resulting structures are rather robust. © 2004 American Institute of Physics.
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81.07.Bc Nanocrystalline materials
61.46.-w Structure of nanoscale materials
81.40.Gh Other heat and thermomechanical treatments
68.60.Bs Mechanical and acoustical properties
81.15.Pq Electrodeposition, electroplating
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
62.20.M- Structural failure of materials
68.35.Gy Mechanical properties; surface strains

Persistence of (In,Ga)As quantum-dot chains under index deviation from GaAs(100)

Z. M. Wang, Yu. I. Mazur, G. J. Salamo, P. M. Lytvin, V. V. Strelchuk, and M. Ya. Valakh

Appl. Phys. Lett. 84, 4681 (2004); http://dx.doi.org/10.1063/1.1760219 (3 pages) | Cited 7 times

Online Publication Date: 19 May 2004

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Utilizing the naturally curved surface contours provided by oval defects on a GaAs(100) surface, we demonstrate that alignment of quantum-dot chains formed during the growth of (In,Ga)As multilayers is unyielding to a modest deviation of surface orientation from (100) of about 0.7° along [01-1] and 8° along [011]. This finding suggests that the strain-driven kinetic anisotropy responsible for the formation of the quantum dot chains dominates over selective island formation at steps due to surface misorientation. The robustness of the quantum dot chain adds to its potential for its future application. © 2004 American Institute of Physics.
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81.07.Ta Quantum dots
68.65.Hb Quantum dots (patterned in quantum wells)
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.65.Ac Multilayers
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Fabrication of vertically aligned carbon nanowalls using capacitively coupled plasma-enhanced chemical vapor deposition assisted by hydrogen radical injection

M. Hiramatsu, K. Shiji, H. Amano, and M. Hori

Appl. Phys. Lett. 84, 4708 (2004); http://dx.doi.org/10.1063/1.1762702 (3 pages) | Cited 100 times

Online Publication Date: 19 May 2004

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Two-dimensional carbon nanostructures (carbon nanowalls) were fabricated using capacitively coupled radio-frequency plasma-enhanced chemical vapor deposition assisted by H radical injection. Carbon nanowalls were grown on Si, SiO2, and sapphire substrates without catalyst, and independent of substrate materials. Correlation between carbon nanowall growth and fabrication conditions, such as carbon source gases was investigated. In the case using C2F6/H2 system, aligned carbon nanowalls were grown vertically on the substrate, while carbon nanowalls grown using CH4/H2 system were waved and thin (<10 nm). In the case of the deposition without H radical injection, on the other hand, carbon nanowalls were not fabricated. © 2004 American Institute of Physics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
52.77.Dq Plasma-based ion implantation and deposition
61.46.-w Structure of nanoscale materials

End-bonding multiwalled carbon nanotubes in alumina templates: Superconducting proximity effect

J. Haruyama, A. Tokita, N. Kobayashi, M. Nomura, S. Miyadai, K. Takazawa, A. Takeda, and Y. Kanda

Appl. Phys. Lett. 84, 4714 (2004); http://dx.doi.org/10.1063/1.1755416 (3 pages)

Online Publication Date: 20 May 2004

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We cut off the top parts of multiwalled carbon nanotubes (MWNTs), which are synthesized in the nanopores of an alumina template and grown over the template surface from the pores, by utilizing ultrasonic cleaning. This leads to highly regularly aligned MWNTs with open top ends and tubes of the same length in the template. These open top ends can be end-bonded by evaporating gold/niobium electrodes and performing optimal annealing. We find that these niobium/MWNTs junctions result in highly transparent interfaces. As evidence, proximity-induced superconductivity and supercurrents are shown in the MWNTs. © 2004 American Institute of Physics.
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74.45.+c Proximity effects; Andreev reflection; SN and SNS junctions
61.46.-w Structure of nanoscale materials

Stacking of InAs/InP(001) quantum wires studied by in situ stress measurements: Role of inhomogeneous stress fields

David Fuster, María Ujué González, Luisa González, Yolanda González, Teresa Ben, Arturo Ponce, and Sergio I. Molina

Appl. Phys. Lett. 84, 4723 (2004); http://dx.doi.org/10.1063/1.1759374 (3 pages) | Cited 15 times

Online Publication Date: 20 May 2004

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Size and spatial distribution homogeneity of nanostructures is greatly improved by making stacks of nanostructures separated by thin spacers. In this work, we present in situ and in real time stress measurements and reflection high-energy electron diffraction observations and ex situ transmission electron microscopy (TEM) characterization of stacked layers of InAs quantum wires (QWRs) separated by InP spacer layers, d(InP), of thickness between 3 and 20 nm. For d(InP)<20 nm, the amount of InAs involved in the created QWR from the second stack layer on, exceeds that provided by the In cell. Our results suggest that in those cases InAs three dimensional islands formation starts at the P/As switching and lasts during further InAs deposition. We propose an explanation for this process that is strongly supported on TEM observations. The results obtained in this work imply that concepts like the existence of a critical thickness for two- to three-dimensional growth mode transition should be revised in correlated QWR stacks of layers. © 2004 American Institute of Physics.
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81.05.Ea III-V semiconductors
61.46.-w Structure of nanoscale materials
68.65.La Quantum wires (patterned in quantum wells)
81.07.Vb Quantum wires
68.65.Ac Multilayers
68.35.B- Structure of clean surfaces (and surface reconstruction)

Subwavelength emitters in the near-infrared based on mercury telluride nanocrystals

P. Olk, B. C. Buchler, V. Sandoghdar, N. Gaponik, A. Eychmüller, and A. L. Rogach

Appl. Phys. Lett. 84, 4732 (2004); http://dx.doi.org/10.1063/1.1759386 (3 pages) | Cited 17 times

Online Publication Date: 20 May 2004

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The optical properties of near-infrared-emitting mercury telluride (HgTe) nanocrystals are investigated using fluorescence confocal microscopy. The HgTe quantum dots were coated with a “layer-by-layer” process on latex spheres with diameters down to 150 nm and number of layers varying from 1 to 3. The individual spheres act as bright subwavelength light sources. Measurements of the fluorescence decay show that the lifetime varies with the number of nanocrystal layers. © 2004 American Institute of Physics.
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78.67.Hc Quantum dots
07.57.Hm Infrared, submillimeter wave, microwave, and radiowave sources

Ignition studies of Al/Fe2O3 energetic nanocomposites

L. Menon, S. Patibandla, K. Bhargava Ram, S. I. Shkuratov, D. Aurongzeb, M. Holtz, J. Berg, J. Yun, and H. Temkin

Appl. Phys. Lett. 84, 4735 (2004); http://dx.doi.org/10.1063/1.1759387 (3 pages) | Cited 19 times

Online Publication Date: 20 May 2004

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We prepare energetic nanocomposites, which undergo an exothermic reaction when ignited at moderate temperature. The nanocomposites are a mixture of Al fuel and Fe2O3 oxidizer where Fe2O3 is in the form of an array of nanowires embedded in the thin Al film. We achieve a very high packing density of the nanocomposites, precise control of oxidizer–fuel sizes at the nanoscale level, and direct contact between oxidizer and fuel. We find that the flame temperature does not depend on ignition temperature. © 2004 American Institute of Physics.
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81.07.Bc Nanocrystalline materials
81.16.Pr Micro- and nano-oxidation
82.33.-z Reactions in various media

Nanoparticle ring formation in evaporating micron-size droplets

L. V. Govor, G. Reiter, G. H. Bauer, and J. Parisi

Appl. Phys. Lett. 84, 4774 (2004); http://dx.doi.org/10.1063/1.1759378 (3 pages) | Cited 11 times

Online Publication Date: 21 May 2004

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Self-assembly process of CoPt3 particles into a ring pattern (ring diameter ranging from 0.6 to 1.5 μm, particle diameter 6 nm) results from phase separation in the thin film of a binary mixture, giving rise to a bilayer structure and subsequent decomposition of the top layer into droplets. Evaporation of the droplet leads to a shrinking of its contact line, and the particles located at the contact line follow its motion and self-assemble along the line. © 2004 American Institute of Physics.
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81.16.Dn Self-assembly
81.07.-b Nanoscale materials and structures: fabrication and characterization
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