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Applied Physics Letters / Volume 84 / Issue 24 / NANOSCALE SCIENCE AND DESIGN

Appl. Phys. Lett. 84, 4968 (2004); doi:10.1063/1.1762701 (3 pages)

Silicon nanowhiskers grown on 〈111〉Si substrates by molecular-beam epitaxy

L. Schubert1, P. Werner1, N. D. Zakharov1, G. Gerth1, F. M. Kolb1, L. Long1, U. Gösele1, and T. Y. Tan2

1MPI für Mikrostrukturphysik, Weinberg 2, D-06120 Halle (Saale), Germany
2Pratt School of Engineering, Duke University, Durham, North Carolina 27708

(Received 23 February 2004; accepted 23 April 2004; published online 28 May 2004)

Silicon nanowhiskers in the diameter range of 70 to 200 nm were grown on 〈111〉-oriented silicon substrates by molecular-beam epitaxy. Assuming the so-called “vapor–liquid–solid” (VLS) growth process to operate, we initiated the growth by using small clusters of gold at the silicon interface as seeds. The in situ generation of the Au clusters as well as the growth parameters of the whiskers are discussed. The experimentally observed radius dependence of the growth velocity of the nanowhiskers is opposite to what is known for VLS growth based on chemical vapor deposition and can be explained by an ad-atom diffusion on the surface of the whiskers. © 2004 American Institute of Physics.

© 2004 American Institute of Physics

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KEYWORDS and PACS

Keywords

silicon, elemental semiconductors, whiskers (crystal), nanostructured materials, molecular beam epitaxial growth, gold, metal clusters, surface diffusion, semiconductor growth

PACS

  • 68.70.+w

    Whiskers and dendrites (growth, structure, and nonelectronic properties)

  • 81.05.Cy

    Elemental semiconductors

  • 81.15.Hi

    Molecular, atomic, ion, and chemical beam epitaxy

ARTICLE DATA

Permalink
http://link.aip.org/link/doi/10.1063/1.1762701

PUBLICATION DATA

ISSN:

0003-6951 (print)  
1077-3118 (online)

Publisher:

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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