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Applied Physics Letters / Volume 84 / Issue 24 / NANOSCALE SCIENCE AND DESIGN

Appl. Phys. Lett. 84, 4971 (2004); http://dx.doi.org/10.1063/1.1762974 (3 pages)

Writing polarization bits on the multiferroic BiMnO3 thin film using Kelvin probe force microscope

J. Y. Son, Bog G. Kim, C. H. Kim, and J. H. Cho

RCDAMP and Department of Physics, Pusan National University, Pusan 609-735, Korea

(Received 23 January 2004; accepted 19 April 2004; published online 28 May 2004)

We report the multiferroic properties of epitaxially (100) oriented BiMnO3 thin film on (100) LaAlO3 substrate and preferentially (111) oriented BiMnO3 thin film on (111) Pt/TiO2/SiO2/Si substrate. Nano-size bits of ferroelectric polarization on the BiMnO3 thin film on (111) Pt/TiO2/SiO2/Si substrate can be easily written and read by Kelvin force microscope (KFM). We found that, for the preferentially (111) oriented BiMnO3 thin film, only ferroelectric polarization has been induced at the low writing biases, which makes the writing and reading process simple. This suggests that the preferentially oriented BiMnO3 thin film is a potential candidate for the high-density data storage device based on KFM. © 2004 American Institute of Physics.

© 2004 American Institute of Physics

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KEYWORDS and PACS

Keywords

ferroelasticity, ferroelectric materials, ferroelectric thin films, bismuth compounds, epitaxial layers, texture, dielectric polarisation, ferroelectric storage

PACS

  • 77.22.Ej

    Polarization and depolarization

  • 77.80.-e

    Ferroelectricity and antiferroelectricity

  • 77.84.Bw

    Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.

  • 77.55.-g

    Dielectric thin films

  • 68.55.-a

    Thin film structure and morphology

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.1762974

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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