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14 Jun 2004

Volume 84, Issue 24, pp. 4839-5046

Issue Cover Spotlight Figure

Appl. Phys. Lett. 84, 4409 (2004); http://dx.doi.org/10.1063/1.1757648 (3 pages)

Azita Soleymani, Piroz Zamankhan, and William Polashenski
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Native oxide decomposition and local oxidation of 6H-SiC (0001) surface by atomic force microscopy

X. N. Xie, H. J. Chung, C. H. Sow, and A. T. S. Wee

Appl. Phys. Lett. 84, 4914 (2004); http://dx.doi.org/10.1063/1.1728305 (3 pages) | Cited 23 times

Online Publication Date: 28 May 2004

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We have observed the native oxide decomposition and local oxide growth on 6H-silicon carbide (0001) surface induced by atomic force microscopy (AFM). When the biased AFM probe was scanned over surface areas, native oxide was decomposed and assembled into protruded lines. The decomposition is accompanied by simultaneous graphitization of the scanned areas, leading to metal–semiconductor contact as evidenced in I–V characteristics. When the probe was immobilized and longer bias duration applied, direct oxidation of silicon carbide (SiC) surface was achieved. The dielectrical properties of AFM oxide on SiC were also investigated in terms of interface barrier height. © 2004 American Institute of Physics.
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81.65.Mq Oxidation
73.40.Ns Metal-nonmetal contacts
64.75.-g Phase equilibria
68.35.B- Structure of clean surfaces (and surface reconstruction)
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A lead-free high-TC ferroelectric BaTi2O5: A first-principles study

Umesh Waghmare, Marcel H. F. Sluiter, Teiichi Kimura, Takashi Goto, and Yoshiyuki Kawazoe

Appl. Phys. Lett. 84, 4917 (2004); http://dx.doi.org/10.1063/1.1757021 (3 pages) | Cited 18 times

Online Publication Date: 28 May 2004

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Previous experimental indications of ferroelectricity with Curie temperature (TC) of 747 K in BaTi2O5 are confirmed through assessment of its structural stability and estimation of its spontaneous polarization using first-principles density functional theory calculations. The present work establishes that the polarization is observed along b axis only and determines its structural origin with calculations of the Born effective charges. We find its piezoelectric response is comparable to that of PbTiO3, which with its high TC and nonperovskite structure should open up possibilities for new lead-free ferroelectric materials. © 2004 American Institute of Physics.
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77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
61.66.Fn Inorganic compounds
77.80.B- Phase transitions and Curie point
77.22.Ej Polarization and depolarization
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Controlled cleavage of single semiconducting nanowires and study on the suitability of their use as nanocavities for nanolasers

Q. Chen and L.-M. Peng

Appl. Phys. Lett. 84, 4920 (2004); http://dx.doi.org/10.1063/1.1757635 (3 pages) | Cited 2 times

Online Publication Date: 28 May 2004

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Single semiconducting nanowires have been cleaved to desired length at desired locations inside the scanning electron microscope (SEM) using a nanoprobe system. SEM and transmission electron microscope examinations of the cleaved nanowires revealed that the cleaved ends of the nanowires are in general atomic flat, but not without atomic steps. Possible use of the cleaved nanowire as nanocavity for nanolaser was considered, and several key parameters were estimated. In particular, our result shows that, for a semiconducting CdS nanowire, the effect of the atomic steps at the cleaved ends of the nanowire is negligible if the nanowire cavity is longer than several micrometers. © 2004 American Institute of Physics.
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62.20.M- Structural failure of materials
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
61.46.-w Structure of nanoscale materials
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Size effects on exchange bias in sub-100 nm ferromagnetic–antiferromagnetic dots deposited on prepatterned substrates

V. Baltz, J. Sort, B. Rodmacq, B. Dieny, and S. Landis

Appl. Phys. Lett. 84, 4923 (2004); http://dx.doi.org/10.1063/1.1757646 (3 pages) | Cited 16 times

Online Publication Date: 28 May 2004

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Exchange bias effects have been investigated in ferromagnetic (FM)–antiferromagnetic (AFM) square dots, with lateral sizes of 90 nm, sputtered on a prepatterned Si substrate. The magnetic behavior of the dots has been compared with that of a continuous FM–AFM bilayer with the same composition. Along the unidirectional direction, the dots exhibit square hysteresis loops and preserve an exchange bias field, HE, of 70 Oe at room temperature, which is about 40% smaller than HE in the continuous film. In addition, the distribution of blocking temperatures in the nanostructures is found to be shifted toward lower values with respect to that in the continuous film. These results can be interpreted assuming that the reduced lateral dimensions of the nanostructures impose some constraints on the formation and pinning of domain walls in the AFM layer. © 2004 American Institute of Physics.
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75.50.Ee Antiferromagnetics
61.46.-w Structure of nanoscale materials
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.50.Dd Nonmetallic ferromagnetic materials
75.60.Ch Domain walls and domain structure
75.70.Kw Domain structure (including magnetic bubbles and vortices)
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.50.Vv High coercivity materials
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
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Terahertz emission due to interminiband resonant Zener tunneling in wide-miniband GaAs/Al0.3Ga0.7As superlattices

Y. Shimada, N. Sekine, and K. Hirakawa

Appl. Phys. Lett. 84, 4926 (2004); http://dx.doi.org/10.1063/1.1759382 (3 pages) | Cited 10 times

Online Publication Date: 28 May 2004

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We have investigated terahertz (THz) emission induced by high-field electron transport in biased wide-miniband GaAs/Al0.3Ga0.7As superlattices. With increasing bias electric fields, two distinct regimes are observed in the bias-field dependence of the emitted THz intensity. These two regimes are attributed to the intraminiband transport and interminiband Zener tunneling regimes, respectively. In the Zener tunneling regime, quasiperiodic structures are observed in the bias field dependence of the emitted THz intensity and are identified to be due to the resonant Zener tunneling between the Wannier–Stark ladders associated with the ground and excited minibands. © 2004 American Institute of Physics.
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73.63.-b Electronic transport in nanoscale materials and structures
72.20.Ht High-field and nonlinear effects
84.40.-x Radiowave and microwave (including millimeter wave) technology
71.20.Nr Semiconductor compounds
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Direct observation of the barrier asymmetry in magnetic tunnel junctions

P. H. P. Koller, H. J. M. Swagten, W. J. M. de Jonge, H. Boeve, and R. Coehoorn

Appl. Phys. Lett. 84, 4929 (2004); http://dx.doi.org/10.1063/1.1759778 (3 pages) | Cited 8 times

Online Publication Date: 28 May 2004

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A photoconductance method has been used to study directly the barrier asymmetry in TaOx magnetic tunnel junctions. Due to optical electron-hole pair generation in the barrier itself and subsequent transport in the electric field, the sign and magnitude of the barrier asymmetry can be determined quite accurately. The reliability of the technique is demonstrated by the independence on the direction of illumination. The oxidation time where the asymmetry becomes zero is found to coincide with a maximum in the magnetoresistance ratio. This is argued to be due to the complete oxidation of the barrier material, resulting in a symmetric tunnel barrier. © 2004 American Institute of Physics.
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72.40.+w Photoconduction and photovoltaic effects
85.75.-d Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields
72.20.My Galvanomagnetic and other magnetotransport effects
75.47.-m Magnetotransport phenomena; materials for magnetotransport
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
81.65.Mq Oxidation
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Multiwall nanotubes with intramolecular junctions (CNx/C): Preparation, rectification, logic gates, and application

Ping’an Hu, Kai Xiao, Yunqi Liu, Gui Yu, Xianbao Wang, Lei Fu, Guanglei Cui, and Daoben Zhu

Appl. Phys. Lett. 84, 4932 (2004); http://dx.doi.org/10.1063/1.1760212 (3 pages) | Cited 14 times

Online Publication Date: 28 May 2004

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We prepared a large quantity of multiwall nanotubes with intramolecular junctions (CNx/C) by pyrolysis of iron phthalocyanine with or without an inlet of ammonia gas. The nanotubes consist of two sections, one section made of carbon nitride featuring bamboo-like structure and the other one made of carbon featuring empty hollow cylinder structure, and thus the intramolecular junctions were formed in the middle as a result of being doped or undoped with nitrogen. Nanodiode based on a single CNx/C junction shows reproducible rectifying behavior with a rectification ratio of 1.3×103 at ±2 V. In addition, the nanodiode demonstrated as a half-wave rectifier worked at an input sine wave of 1 kHz. Two CNx/C junctions were configured together to exhibit functions of OR and AND logic gates. Moreover, after substituting the wave-detection silicon diode in common transistor radio set with our nanodiode, the radio set still worked normally, representing an important step toward the potential application for nano-scale devices. © 2004 American Institute of Physics.
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81.05.Cy Elemental semiconductors
81.05.ub Fullerenes and related materials
61.46.-w Structure of nanoscale materials
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)
85.35.Kt Nanotube devices
84.30.Sk Pulse and digital circuits
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Large second-harmonic signal in thermally poled lead glass-silica waveguides

Y. Luo, A. Biswas, A. Frauenglass, and S. R. J. Brueck

Appl. Phys. Lett. 84, 4935 (2004); http://dx.doi.org/10.1063/1.1760213 (3 pages) | Cited 13 times

Online Publication Date: 28 May 2004

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Thermal poling of silica-lead glass-silica waveguides formed by laser ablation of lead glass and e-beam evaporation of the silica cladding is reported. A large nonlinearity localized within the Pb-glass layer was found by scanning the probe laser beam across an angle-polished sample, and a peak second-order nonlinear susceptibility χ(2) as high as 15 pm/V was achieved in the Pb-glass layer. A simple theoretical model based on charge transport in the different materials during poling is proposed to explain complex χ(2) profile. The large third-order nonlinearity of lead glass plays a key role in the generation of the large second-harmonic signal. © 2004 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
52.38.Mf Laser ablation
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
42.65.Wi Nonlinear waveguides
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Enhancement of third-order nonlinear optical susceptibilities in silica-capped Au nanoparticle films with very high concentrations

Y. Hamanaka, K. Fukuta, A. Nakamura, L. M. Liz-Marzán, and P. Mulvaney

Appl. Phys. Lett. 84, 4938 (2004); http://dx.doi.org/10.1063/1.1760229 (3 pages) | Cited 57 times

Online Publication Date: 28 May 2004

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Third-order nonlinear optical susceptibilities (χ(3)) and response times have been investigated for silica-capped Au nanoparticles for various volume fractions, p, of Au nanoparticles ranging from 0.027 to 0.66. The imaginary part of χ(3)(Im χ(3)) around the surface plasmon resonance increases with increasing p up to 0.34, and decreases for p>0.39. In addition to the local field enhancement around the surface plasmon resonance in the composite system, an additional enhancement of Im χ(3) due to the interaction between nanoparticles for p<0.39 is observed. © 2004 American Institute of Physics.
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42.65.An Optical susceptibility, hyperpolarizability
73.40.Gk Tunneling
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
78.66.Sq Composite materials
68.55.-a Thin film structure and morphology

Low-temperature growth and properties of ZnO nanowires

Xuan Wang, Qingwen Li, Zhibo Liu, Jin Zhang, Zhongfan Liu, and Rongming Wang

Appl. Phys. Lett. 84, 4941 (2004); http://dx.doi.org/10.1063/1.1760594 (3 pages) | Cited 66 times

Online Publication Date: 28 May 2004

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ZnO nanowires were obtained through evaporation of zinc powders under a low temperature of 400 °C. These ZnO nanowires, in the diameter of ∼10 nm, were long and curved with lengths of tens of micrometers. High-resolution transmission electron microscopy showed these ZnO nanowires were mostly crystalline structure; however, the kink parts contained dislocations and stacking faults. Furthermore, the movement of dislocations was observed in the kink parts under e-beam irradiation. Photoluminescence and Raman spectra show that there exist oxygen vacancies in the ZnO nanowires. Possible reasons for the growth and properties of ZnO nanowires were discussed. © 2004 American Institute of Physics.
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81.05.Dz II-VI semiconductors
81.07.Vb Quantum wires
61.82.Fk Semiconductors
61.80.Fe Electron and positron radiation effects
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
78.55.Et II-VI semiconductors
78.30.Fs III-V and II-VI semiconductors
78.66.Hf II-VI semiconductors
68.65.La Quantum wires (patterned in quantum wells)
68.55.-a Thin film structure and morphology
78.67.Lt Quantum wires
61.72.Nn Stacking faults and other planar or extended defects
68.37.Lp Transmission electron microscopy (TEM)
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
61.72.J- Point defects and defect clusters
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Strong red emission in heterojunctions of conjugated polymer blends

Zong-Long Li, Hsin-Fei Meng, Sheng-Fu Horng, Chain-Shu Hsu, Lai-Cheng Chen, and Shu-Mei Chang

Appl. Phys. Lett. 84, 4944 (2004); http://dx.doi.org/10.1063/1.1760599 (3 pages) | Cited 6 times

Online Publication Date: 28 May 2004

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We demonstrate strong red electroluminescence in bilayer polymer light-emitting diodes with poly(3-hexylthiophene) and polyfluorene copolymers. The emission spectrum of the diode, peaked at 612 nm, is different from either of the two polymer layers, and is attributed to the exciplex state existing only at the heterojunction. The efficiency of this junction emission is very high for red polymer light-emitting diodes. Peak luminance of 3500 cd/m2 with yield 1.3 cd/A is achieved. The emission color can be made more saturated by blending red-emitting polymers into the polyfluorene to eliminate the small residual green emission. © 2004 American Institute of Physics.
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85.60.Jb Light-emitting devices
78.60.Fi Electroluminescence
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Measurement of spin polarization by Andreev reflection in ferromagnetic In1−xMnxSb epilayers

R. P. Panguluri, B. Nadgorny, T. Wojtowicz, W. L. Lim, X. Liu, and J. K. Furdyna

Appl. Phys. Lett. 84, 4947 (2004); http://dx.doi.org/10.1063/1.1760883 (3 pages) | Cited 12 times

Online Publication Date: 28 May 2004

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We carried out point contact Andreev reflection (PCAR) spin spectroscopy measurements on epitaxially grown ferromagnetic In1−xMnxSb epilayers with a Curie temperature of ∼9 K. The spin sensitivity of PCAR in this material was demonstrated by parallel control studies on its nonmagnetic analog, In1−yBeySb. We found the conductance curves of the Sn point contacts with In1−yBeySb to be fairly conventional, with the possible presence of proximity-induced superconductivity effects at the lowest temperatures. These measurements provided control data for subsequent PCAR measurements on ferromagnetic In1−xMnxSb, which indicated spin polarization in In1−xMnxSb to be 52±3%. © 2004 American Institute of Physics.
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75.50.Pp Magnetic semiconductors
75.50.Dd Nonmetallic ferromagnetic materials
75.70.Ak Magnetic properties of monolayers and thin films
75.47.-m Magnetotransport phenomena; materials for magnetotransport
75.30.Wx Spin crossover
75.25.-j Spin arrangements in magnetically ordered materials (including neutron and spin-polarized electron studies, synchrotron-source x-ray scattering, etc.)
75.40.Cx Static properties (order parameter, static susceptibility, heat capacities, critical exponents, etc.)
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Effects of thermal stress on interdiffusion in InGaAsN/GaAs quantum dots

Q. Gao, H. H. Tan, L. Fu, and C. Jagadish

Appl. Phys. Lett. 84, 4950 (2004); http://dx.doi.org/10.1063/1.1760886 (3 pages) | Cited 5 times

Online Publication Date: 28 May 2004

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Thermal-stress controlled interdiffusion in InGaAsN/GaAs quantum dots (QDs) has been studied by deposition of titanium oxide (TiO2) layers combined with rapid thermal annealing. Without TiO2 cap layers, blueshifting of the band gap from 1.033 to 1.180 eV at 77 K has been observed after annealing at 850 °C for 30 s due to the thermal interdiffusion. The thermal interdiffusion has been effectively suppressed by depositing TiO2 layers on the samples without degrading the photoluminescence properties. By a combination of annealing temperature and TiO2 thickness, controlled blueshifting of the band gap has been achieved. We suggest that the mechanism of suppression of thermal interdiffusion is the thermal stress imposed on the QD structure generated by TiO2 layers during annealing. © 2004 American Institute of Physics.
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66.30.Ny Chemical interdiffusion; diffusion barriers
78.67.Hc Quantum dots
61.72.Cc Kinetics of defect formation and annealing
78.55.Cr III-V semiconductors
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Absolute H atom density measurement in pure methane pulsed discharge

B. N. Ganguly and J. W. Parish

Appl. Phys. Lett. 84, 4953 (2004); http://dx.doi.org/10.1063/1.1760888 (3 pages) | Cited 6 times

Online Publication Date: 28 May 2004

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Absolute atomic hydrogen and methyl radical production resulting from direct electron impact dissociative excitation of CH4 has been measured in pulsed discharge by two-photon allowed laser induced fluorescence. For 20 Torr pure methane discharge with 480 ns pulse duration, 4–6 kV voltage applied, and 6–11.5 mJ input electrical energy yield of 10–22×1015 cm−3 hydrogen atoms, i.e., up to 4.5% dissociation of CH4 is achieved by direct electron impact with 50% energy conversion efficiency. © 2004 American Institute of Physics.
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52.70.Kz Optical (ultraviolet, visible, infrared) measurements
52.20.Fs Electron collisions
52.20.Hv Atomic, molecular, ion, and heavy-particle collisions
52.80.Tn Other gas discharges
82.33.Xj Plasma reactions (including flowing afterglow and electric discharges)
52.25.-b Plasma properties
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High microwave permittivity of multiwalled carbon nanotube composites

Junhua Wu and Lingbing Kong

Appl. Phys. Lett. 84, 4956 (2004); http://dx.doi.org/10.1063/1.1762693 (3 pages) | Cited 52 times

Online Publication Date: 28 May 2004

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Complex permittivity spectra of the multiwalled carbon nanotube (MWNT)-epoxy composites with mass concentrations up to 25.9% were measured from 10 MHz to 20 GHz. The composites exhibit high real and imaginary relative permittivities over broad bandwidth, showing strong dependence on the MWNT loading. It is observed that distinct resonance takes place at ∼ 1.5 GHz, with the corresponding resonant frequency shifts downward as the MWNT concentration increases. The origin of the dielectric properties is explained in terms of the dielectric relaxation/resonance and electrical conduction behavior of the nanotube composites, substantiated by the agreement between simulation and experimental data. © 2004 American Institute of Physics.
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61.46.-w Structure of nanoscale materials
77.22.Ch Permittivity (dielectric function)
77.22.Gm Dielectric loss and relaxation
72.80.Rj Fullerenes and related materials
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects

Effect of operating temperature and film thickness on the pyroelectric response of ferroelectric materials

A. Sharma, Z.-G. Ban, S. P. Alpay, and J. V. Mantese

Appl. Phys. Lett. 84, 4959 (2004); http://dx.doi.org/10.1063/1.1762691 (3 pages) | Cited 13 times

Online Publication Date: 28 May 2004

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The influence of the operating temperature and film thickness on the pyroelectric properties of (001) Ba0.6Sr0.4TiO3 (BST 60/40) epitaxial films on (001) LaAlO3, MgO, and Si substrates is investigated theoretically via a thermodynamic model. The results are presented using contour maps that can be used to identify “design windows” for film thickness and operating temperature for optimum pyroelectric response. For BST 60/40 on LAO and MgO large pyroelectric coefficients ( ∼ 0.7 μC cm−2 K−1) are observed at near room temperature for moderate film thickness (50–200 nm). The pyroresponse of films on Si is suppressed by two orders of magnitude compared to bulk BST 60/40 due to internal stresses. Significant recovery in the pyroelectric coefficient on Si is expected for lower growth temperatures due to the reduction of thermal stresses. © 2004 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.70.+a Pyroelectric and electrocaloric effects
77.80.-e Ferroelectricity and antiferroelectricity
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Ion implant simulations: Kinetic Monte Carlo annealing assessment of the dominant features

I. Martin-Bragado, M. Jaraiz, P. Castrillo, R. Pinacho, J. E. Rubio, and J. Barbolla

Appl. Phys. Lett. 84, 4962 (2004); http://dx.doi.org/10.1063/1.1762696 (3 pages) | Cited 3 times

Online Publication Date: 28 May 2004

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The atomistic physically based kinetic Monte Carlo method has been used in conjunction with the binary collision approximation (BCA) to elucidate the implant mechanisms most relevant for modeling transient-enhanced diffusion (TED). For the cases studied, we find that: (i) The spatial correlation of the interstitial, vacancy (I,V) Frenkel pairs is not critical, (ii) the interstitial supersaturation in simulations which include full I, V profiles or only the net I–V is the same, (iii) quick and noisy BCA implant I, V distributions can be directly used (or after smoothing them out) as they can still yield accurate annealing simulations, and (iv) when there is an impurity concentration comparable to the net I–V excess, the full I and V profiles have to be used in order to correctly reproduce the impurity clustering/deactivation. Finally, some practical implications for TED simulations are drawn. © 2004 American Institute of Physics.
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61.72.uf Ge and Si
61.72.up Other materials
61.72.J- Point defects and defect clusters
61.72.Yx Interaction between different crystal defects; gettering effect
02.70.Uu Applications of Monte Carlo methods
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Structure of the glycerol liquid/vapor interface studied by sum-frequency vibrational spectroscopy

Masahito Oh-e, Hiroshi Yokoyama, and Steven Baldelli

Appl. Phys. Lett. 84, 4965 (2004); http://dx.doi.org/10.1063/1.1762699 (3 pages) | Cited 5 times

Online Publication Date: 28 May 2004

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Surface-specific sum-frequency vibrational spectroscopy has been used to study the structures of the glycerol liquid/vapor interface. The results show that the molecules at the glycerol surface are highly polar ordered with the CH2 and CH groups projecting into the vapor and the OH group remaining at the surface or pointing into the bulk. More quantitatively, we have also determined how the CH2 groups of the molecules are oriented at the surface. © 2004 American Institute of Physics.
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64.70.F- Liquid-vapor transitions
78.30.C- Liquids
78.40.Dw Liquids
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
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Silicon nanowhiskers grown on 〈111〉Si substrates by molecular-beam epitaxy

L. Schubert, P. Werner, N. D. Zakharov, G. Gerth, F. M. Kolb, L. Long, U. Gösele, and T. Y. Tan

Appl. Phys. Lett. 84, 4968 (2004); http://dx.doi.org/10.1063/1.1762701 (3 pages) | Cited 136 times

Online Publication Date: 28 May 2004

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Silicon nanowhiskers in the diameter range of 70 to 200 nm were grown on 〈111〉-oriented silicon substrates by molecular-beam epitaxy. Assuming the so-called “vapor–liquid–solid” (VLS) growth process to operate, we initiated the growth by using small clusters of gold at the silicon interface as seeds. The in situ generation of the Au clusters as well as the growth parameters of the whiskers are discussed. The experimentally observed radius dependence of the growth velocity of the nanowhiskers is opposite to what is known for VLS growth based on chemical vapor deposition and can be explained by an ad-atom diffusion on the surface of the whiskers. © 2004 American Institute of Physics.
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68.70.+w Whiskers and dendrites (growth, structure, and nonelectronic properties)
81.05.Cy Elemental semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Writing polarization bits on the multiferroic BiMnO3 thin film using Kelvin probe force microscope

J. Y. Son, Bog G. Kim, C. H. Kim, and J. H. Cho

Appl. Phys. Lett. 84, 4971 (2004); http://dx.doi.org/10.1063/1.1762974 (3 pages) | Cited 46 times

Online Publication Date: 28 May 2004

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We report the multiferroic properties of epitaxially (100) oriented BiMnO3 thin film on (100) LaAlO3 substrate and preferentially (111) oriented BiMnO3 thin film on (111) Pt/TiO2/SiO2/Si substrate. Nano-size bits of ferroelectric polarization on the BiMnO3 thin film on (111) Pt/TiO2/SiO2/Si substrate can be easily written and read by Kelvin force microscope (KFM). We found that, for the preferentially (111) oriented BiMnO3 thin film, only ferroelectric polarization has been induced at the low writing biases, which makes the writing and reading process simple. This suggests that the preferentially oriented BiMnO3 thin film is a potential candidate for the high-density data storage device based on KFM. © 2004 American Institute of Physics.
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77.22.Ej Polarization and depolarization
77.80.-e Ferroelectricity and antiferroelectricity
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.55.-g Dielectric thin films
68.55.-a Thin film structure and morphology
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Noncollinear magnetism and enhancement of magnetocrystalline anisotropy at the Σ3(111) grain boundary in ferromagnetic Fe

Kohji Nakamura, Tomonori Ito, A. J. Freeman, Lieping Zhong, and Juan Fernandez-de-Castro

Appl. Phys. Lett. 84, 4974 (2004); http://dx.doi.org/10.1063/1.1762976 (3 pages)

Online Publication Date: 28 May 2004

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Magnetic structures and magnetocrystalline anisotropy of the Σ3[1math0](111) grain boundary (GB) in ferromagnetic Fe are investigated by the first-principles full-potential linearized augmented plane-wave method including intra-atomic noncollinear magnetism. In breaking the spatial translation symmetry in a crystalline solid, the GB is found to give rise to a magnetic noncollinearity, where the magnetic moments at both sides of the GB orient at an angle of about 10° with respect to each other. Importantly, the presence of the GB enhances the magnetocrystalline anisotropy energy by one order of magnitude from its bulk value and may induce a pinning effect on the magnetization rotation or magnetic domain wall motion. © 2004 American Institute of Physics.
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75.30.Gw Magnetic anisotropy
61.72.Mm Grain and twin boundaries
75.50.Bb Fe and its alloys
71.15.Ap Basis sets (LCAO, plane-wave, APW, etc.) and related methodology (scattering methods, ASA, linearized methods, etc.)
75.30.Cr Saturation moments and magnetic susceptibilities
75.60.Ch Domain walls and domain structure

Microwave generation by a direct current spin-polarized current in nanoscale square magnets

Haiwen Xi, Kai-Zhong Gao, and Yiming Shi

Appl. Phys. Lett. 84, 4977 (2004); http://dx.doi.org/10.1063/1.1762981 (3 pages) | Cited 13 times

Online Publication Date: 28 May 2004

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Theoretical calculation for a simple nanoscale magnetoelectronic device to function as a microwave generator based on the spin-transfer torque effect is presented. The device is unique because the output amplitude and frequency can be continuously tuned by the electrical current in the microwave frequency range. Analysis and discussion of the device structure, function, and realization are provided. © 2004 American Institute of Physics.
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84.40.Fe Microwave tubes (e.g., klystrons, magnetrons, traveling-wave, backward-wave tubes, etc.)
85.70.Ec Magnetostrictive, magnetoacoustic, and magnetostatic devices
75.30.Gw Magnetic anisotropy
85.35.-p Nanoelectronic devices
72.25.-b Spin polarized transport
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Cascaded light-emitting devices based on a ruthenium complex

Daniel A. Bernards, Jason D. Slinker, George G. Malliaras, Samuel Flores-Torres, and Héctor D. Abruña

Appl. Phys. Lett. 84, 4980 (2004); http://dx.doi.org/10.1063/1.1762983 (3 pages) | Cited 12 times

Online Publication Date: 28 May 2004

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We use a transition metal complex to demonstrate a cascaded device architecture in which the same metal electrode acts as an anode for one device and a cathode for its neighbor. This architecture does not require patterning of the organic layer and allows monolithic fabrication of panels that show intrinsic fault tolerance to short circuits and are amenable to scaling to large areas. © 2004 American Institute of Physics.
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85.60.Jb Light-emitting devices
42.79.Kr Display devices, liquid-crystal devices
85.60.Pg Display systems
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Tomographic measurement of femtosecond-laser induced stress changes in optical fibers

F. Dürr, H. G. Limberger, R. P. Salathé, F. Hindle, M. Douay, E. Fertein, and C. Przygodzki

Appl. Phys. Lett. 84, 4983 (2004); http://dx.doi.org/10.1063/1.1762990 (3 pages) | Cited 15 times

Online Publication Date: 28 May 2004

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The tomographic measurement of the residual stress profile in femtosecond-laser irradiated standard SMF-28 germanium-doped telecommunication fiber is demonstrated. The fiber is irradiated with weakly focused pulses to realize long-period fiber gratings. In the irradiated grating regions, an asymmetrical increase in axial core stress up to 6.2 kg/mm2 is found. The increase in stress is attributed to a densification of the irradiated glass matrix. The stress-induced anisotropic index distribution is calculated and related to the absolute index change in the irradiated regions. © 2004 American Institute of Physics.
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42.81.Cn Fiber testing and measurement of fiber parameters
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.82.-d Radiation effects on specific materials
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
79.20.Ds Laser-beam impact phenomena

Atom motion of Cu and Co in Cu damascene lines with a CoWP cap

C.-K. Hu, L. M. Gignac, R. Rosenberg, B. Herbst, S. Smith, J. Rubino, D. Canaperi, S. T. Chen, S. C. Seo, and D. Restaino

Appl. Phys. Lett. 84, 4986 (2004); http://dx.doi.org/10.1063/1.1762991 (3 pages) | Cited 15 times

Online Publication Date: 28 May 2004

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Electromigration of Cu and diffusion of Co in Cu damascene bamboo-like grain structure lines capped with CoWP have been studied for sample temperatures between 350 and 425 °C. Void growth from the Cu line/W via interface was observed. Bulk-like activation energy for electromigration of 2.4±0.2 eV was obtained for these samples suggesting that electromigration damage is greatly diminished for these on-chip Cu interconnections. The solubility and diffusivity of Co in Cu was determined from line resistance measurements of thermally annealed Cu lines which were affected by Co diffusion into the Cu line. © 2004 American Institute of Physics.
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66.30.Qa Electromigration
64.75.-g Phase equilibria
66.30.Ny Chemical interdiffusion; diffusion barriers
85.40.Ls Metallization, contacts, interconnects; device isolation
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
61.72.Qq Microscopic defects (voids, inclusions, etc.)
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