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14 Jun 2004

Volume 84, Issue 24, pp. 4839-5046

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Appl. Phys. Lett. 84, 4409 (2004); http://dx.doi.org/10.1063/1.1757648 (3 pages)

Azita Soleymani, Piroz Zamankhan, and William Polashenski
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Organic nonvolatile memory by controlling the dynamic copper-ion concentration within organic layer

Liping Ma, Qianfei Xu, and Yang Yang

Appl. Phys. Lett. 84, 4908 (2004); http://dx.doi.org/10.1063/1.1763222 (3 pages) | Cited 59 times

Online Publication Date: 25 May 2004

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Copper (Cu) migration into semiconductor materials like silicon is a well-known and troublesome phenomenon often causing adverse effect on devices. Generally a diffusion barrier layer is added to prevent Cu metallization. We demonstrate an organic nonvolatile memory device by controlling the Cu-ion (Cu+) concentration within the organic layer. When the Cu+ concentration is high enough, the device exhibits a high conductive state due to the metallization effect. When the Cu+ concentration is low, the device displays a low conductance state. These two states differ in their electrical conductivity by more than seven orders of magnitude and can be precisely switched by controlling the Cu+ concentration through the application of external biases. The retention time of both states can be more than several months, and the device is promising for flash memory application. Discussions about the device operation mechanism are provided. © 2004 American Institute of Physics.
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84.30.Sk Pulse and digital circuits
66.30.Ny Chemical interdiffusion; diffusion barriers
72.80.Le Polymers; organic compounds (including organic semiconductors)

Ion implant simulations: Kinetic Monte Carlo annealing assessment of the dominant features

I. Martin-Bragado, M. Jaraiz, P. Castrillo, R. Pinacho, J. E. Rubio, and J. Barbolla

Appl. Phys. Lett. 84, 4962 (2004); http://dx.doi.org/10.1063/1.1762696 (3 pages) | Cited 3 times

Online Publication Date: 28 May 2004

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The atomistic physically based kinetic Monte Carlo method has been used in conjunction with the binary collision approximation (BCA) to elucidate the implant mechanisms most relevant for modeling transient-enhanced diffusion (TED). For the cases studied, we find that: (i) The spatial correlation of the interstitial, vacancy (I,V) Frenkel pairs is not critical, (ii) the interstitial supersaturation in simulations which include full I, V profiles or only the net I–V is the same, (iii) quick and noisy BCA implant I, V distributions can be directly used (or after smoothing them out) as they can still yield accurate annealing simulations, and (iv) when there is an impurity concentration comparable to the net I–V excess, the full I and V profiles have to be used in order to correctly reproduce the impurity clustering/deactivation. Finally, some practical implications for TED simulations are drawn. © 2004 American Institute of Physics.
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61.72.uf Ge and Si
61.72.up Other materials
61.72.J- Point defects and defect clusters
61.72.Yx Interaction between different crystal defects; gettering effect
02.70.Uu Applications of Monte Carlo methods

Cascaded light-emitting devices based on a ruthenium complex

Daniel A. Bernards, Jason D. Slinker, George G. Malliaras, Samuel Flores-Torres, and Héctor D. Abruña

Appl. Phys. Lett. 84, 4980 (2004); http://dx.doi.org/10.1063/1.1762983 (3 pages) | Cited 11 times

Online Publication Date: 28 May 2004

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We use a transition metal complex to demonstrate a cascaded device architecture in which the same metal electrode acts as an anode for one device and a cathode for its neighbor. This architecture does not require patterning of the organic layer and allows monolithic fabrication of panels that show intrinsic fault tolerance to short circuits and are amenable to scaling to large areas. © 2004 American Institute of Physics.
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85.60.Jb Light-emitting devices
42.79.Kr Display devices, liquid-crystal devices
85.60.Pg Display systems

A low switching voltage organic-on-inorganic heterojunction memory element utilizing a conductive polymer fuse on a doped silicon substrate

Shawn Smith and Stephen R. Forrest

Appl. Phys. Lett. 84, 5019 (2004); http://dx.doi.org/10.1063/1.1763632 (3 pages) | Cited 34 times

Online Publication Date: 28 May 2004

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We present a simple, nonvolatile, write-once-read-many-times (WORM) memory device utilizing an organic-on-inorganic heterojunction (OI–HJ) diode with a conductive polymer fuse consisting of polyethylene dioxythiophene:polysterene sulfonic acid (PEDOT:PSS) forming one side of the rectifying junction. Current transients are used to change the fuse from a conducting to a nonconducting state to record a logical “1” or “0”, while the nonlinearity of the OI–HJ allows for passive matrix memory addressing. The device switches at 2 and 4 V for 50 nm thick PEDOT:PSS films on p-type Si and n-type Si, respectively. This is significantly lower than the switching voltage used in PEDOT:PSS/p-i-n Si memory elements [J. Appl Phys. 94, 7811 (2003)]. The switching results in a permanent reduction of forward-bias current by approximately five orders of magnitude. These results suggest that the OI–HJ structure has potential for use in low-cost passive matrix WORM memories for archival storage applications. © 2004 American Institute of Physics.
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42.79.Vb Optical storage systems, optical disks
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